ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT

General Description

Applications

The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the

next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.

Automotive Ignition Coil Driver Circuits

Coil- On Plug Applications

EcoSPARK devices can be custom made to specific clamp

voltages. Contact your nearest Fairchild sales office for more
information.

Features
Space saving D - Pak package available
SCIS Energy = 200mJ at TJ = 25oC
Logic Level Gate Drive

Formerly Developmental Type 49444

Package

Symbol
COLLECTOR

JEDEC TO-252AA
D-Pak

JEDEC TO-263AB
D-Pak

JEDEC TO-220AB

E
C

G
R1
GATE

R2

E
COLLECTOR
(FLANGE)

EMITTER

COLLECTOR
(FLANGE)

Device Maximum Ratings TA = 25C unless otherwise noted

Symbol
BVCER

Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)

Ratings
430

Units
V

BVECS

Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)

24

ESCIS25

At Starting TJ = 25C, ISCIS = 11.5A, L = 3.0mHy

200

mJ

ESCIS150

At Starting TJ = 150C, ISCIS = 8.9A, L = 3.0mHy

120

mJ

IC25

Collector Current Continuous, At TC = 25C, See Fig 9

10

IC110

Collector Current Continuous, At TC = 110C, See Fig 9

10

VGEM

Gate to Emitter Voltage Continuous

10

PD

Power Dissipation Total TC = 25C

130

Power Dissipation Derating TC > 25C

0.87

W/C

Operating Junction Temperature Range

-40 to 175

Storage Junction Temperature Range

-40 to 175

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)

300

Tpkg

Max Lead Temp for Soldering (Package Body for 10s)

260

ESD

Electrostatic Discharge Voltage at 100pF, 1500

kV

TJ
TSTG
TL

2002 Fairchild Semiconductor Corporation

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

April 2002

Device Marking
V2040D

Device
ISL9V2040D3S

Package
TO-252AA

Tape Width
16mm

Quantity
2500

V2040S

ISL9V2040S3S

TO-263AB

24mm

800

V2040P

ISL9V2040P3

TO-220AB

Electrical Characteristics TA = 25C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off State Characteristics

BVCER

Collector to Emitter Breakdown Voltage

IC = 2mA, VGE = 0,
RG = 1K, See Fig. 15
TJ = -40 to 150C

370

400

430

BVCES

Collector to Emitter Breakdown Voltage

IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150C

390

420

450

BVECS

Emitter to Collector Breakdown Voltage

IC = -75mA, VGE = 0V,

TC = 25C

30

BVGES

Gate to Emitter Breakdown Voltage

IGES = 2mA

Collector to Emitter Leakage Current

VCER = 250V,
RG = 1K,
See Fig. 11

ICER

IECS

Emitter to Collector Leakage Current

R1

Series Gate Resistance

R2

Gate to Emitter Resistance

12

14

TC = 25C

25

TC = 150C

mA

VEC = 24V, See TC = 25C

Fig. 11
TC = 150C

mA

40

mA

70

10K

26K

On State Characteristics
VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 6A,
VGE = 4V

TC = 25C,
See Fig. 3

1.45

1.9

VCE(SAT)

Collector to Emitter Saturation Voltage

IC = 10A,
VGE = 4.5V

TC = 150C
See Fig. 4

1.95

2.3

12

nC

TC = 25C

1.3

2.3

TC = 150C

0.75

1.8

3.4

Dynamic Characteristics
QG(ON)

Gate Charge

IC = 10A, VCE = 12V,

VGE = 5V, See Fig. 14

VGE(TH)

Gate to Emitter Threshold Voltage

IC = 1.0mA,
VCE = VGE,
See Fig. 10

VGEP

Gate to Emitter Plateau Voltage

IC = 10A,
VCE = 12V

Switching Characteristics
td(ON)R
triseR
td(OFF)L
tfL
SCIS

Current Turn-On Delay Time-Resistive

Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching

VCE = 14V, RL = 1,
VGE = 5V, RG = 1K
TJ = 25C

0.61

2.17

VCE = 300V, L = 500Hy,

VGE = 5V, RG = 1K
TJ = 25C, See Fig. 12

3.64

2.36

TJ = 25C, L = 3.0mHy,
RG = 1K, VGE = 5V, See
Fig. 1 & 2

200

mJ

TO-252, TO-263, TO-220

1.15

C/W

Thermal Characteristics
RJC

Thermal Resistance Junction-Case

2002 Fairchild Semiconductor Corporation

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

Package Marking and Ordering Information

20
ISCIS, INDUCTIVE SWITCHING CURRENT (A)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

20
RG = 1K, VGE = 5V,Vdd = 14V
18
16
14
TJ = 25C

12
10

TJ = 150C

8
6
4
2
SCIS Curves valid for Vclamp Voltages of <430V
0
0

20

40

60

80

100

120

140

160

180

16
14
TJ = 25C
12
10
8

TJ = 150C

6
4
2
0

200

RG = 1K, VGE = 5V,Vdd = 14V

18

SCIS Curves valid for Vclamp Voltages of <430V

0

tCLP, TIME IN CLAMP (S)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE = 6A
VGE = 3.7V
VGE = 4.0V

1.45
1.40
VGE = 4.5V

1.35
VGE = 5.0V
1.30
VGE = 8.0V
1.25
-75

-25

25

75

125

2.4
ICE = 10A

VGE = 4.0V
2.0

1.8

VGE = 4.5V

1.6
VGE = 8.0V

1.4

175

VGE = 3.7V

2.2

-75

TJ, JUNCTION TEMPERATURE (C)

25

75

125

175

20

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

-25

VGE = 5.0V

TJ, JUNCTION TEMPERATURE (C)

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V

15

10

Figure 2. Self Clamped Inductive Switching

Current vs Inductance

1.60

1.50

L, INDUCTANCE (mHy)

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

1.55

VGE = 4.0V
VGE = 3.7V

10

TJ = - 40C

20
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V

15

VGE = 4.0V
VGE = 3.7V

10

5
TJ = 25C
0

0
0

1.0

2.0

3.0

4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage vs

Collector Current

2002 Fairchild Semiconductor Corporation

1.0

2.0

3.0

4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 6. Collector to Emitter On-State Voltage

vs Collector Current

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

Typical Performance Curves (Continued)

30
VGE = 8.0V

ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

20
VGE = 5.0V
VGE = 4.5V

15

VGE = 4.0V
VGE = 3.7V
10

TJ = 175C
0

1.0

2.0

3.0

DUTY CYCLE < 0.5%, VCE = 5V

PULSE DURATION = 250s
25

20

15

10
TJ = 25C
5
TJ = -40C
0

4.0

TJ = 150C

1.0

2.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

3.0

4.0

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current

Figure 8. Transfer Characteristics

2.4

15.0

VCE = VGE
VTH, THRESHOLD VOLTAGE (V)

ICE, DC COLLECTOR CURRENT (A)

VGE = 4.0V
12.5

10.0

7.5

5.0

2.5

5.0

VGE, GATE TO EMITTER VOLTAGE (V)

ICE = 1mA

2.2

2.0

1.8

1.6

1.4

1.2
25

50

75

100

125

150

-50

175

-25

TC, CASE TEMPERATURE (C)

25

50

75

100

125

150

175

TJ JUNCTION TEMPERATURE (C)

Figure 9. DC Collector Current vs Case

Temperature

Figure 10. Threshold Voltage vs Junction

Temperature

10000

10

ICE = 6.5A, VGE = 5V, RG = 1K

1000

Inductive tOFF
SWITCHING TIME (S)

LEAKAGE CURRENT (A)

VECS = 24V

100

10

VCES = 300V

6
Resistive tOFF

4
1

Resistive tON

VCES = 250V

0.1
-50

-25

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (C)

Figure 11. Leakage Current vs Junction

Temperature

2002 Fairchild Semiconductor Corporation

175

25

50

75

100

125

150

175

TJ, JUNCTION TEMPERATURE (C)

Figure 12. Switching Time vs Junction

Temperature

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

Typical Performance Curves (Continued)

1200

IG(REF) = 1mA, RL = 1.25, TJ = 25C

VGE, GATE TO EMITTER VOLTAGE (V)

FREQUENCY = 1 MHz

C, CAPACITANCE (pF)

1000

800
CIES
600

400
CRES
200

COES

7
6
VCE = 12V
5
4
3
2

VCE = 6V

1
0

0
0

10

15

20

25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

10

15

20

25

QG, GATE CHARGE (nC)

Figure 13. Capacitance vs Collector to Emitter

Voltage

Figure 14. Gate Charge

415
BVCER, BREAKDOWN VOLTAGE (V)

ICER = 10mA
410
TJ = - 40C

405
400
395

TJ = 175C

390

TJ = 25C

385
380
375
370
10

100

1000

2000

3000

RG, SERIES GATE RESISTANCE (k)

ZthJC, NORMALIZED THERMAL RESPONSE

Figure 15. Breakdown Voltage vs Series Gate Resistance

100
0.5

0.2

t1

0.1
10-1

PD

0.05

t2
0.02

DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC

0.01
SINGLE PULSE
10-2
10-5

10-4

10-3

10-2

10-1

100

T1, RECTANGULAR PULSE DURATION (s)

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

2002 Fairchild Semiconductor Corporation

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

Typical Performance Curves (Continued)

L
VCE

R
or
L

PULSE
GEN

LOAD

RG

RG = 1K

DUT

DUT

VCE

5V
E
E

Figure 17. Inductive Switching Test Circuit

Figure 18. tON and tOFF Switching Test Circuit

BVCES

VCE
tP

VCE

L
IAS

VDD

VARY tP TO OBTAIN
REQUIRED PEAK IAS

RG

VDD
-

VGE
DUT
tP
0V

IAS

0
0.01
tAV

Figure 19. Unclamped Energy Test Circuit

2002 Fairchild Semiconductor Corporation

Figure 20. Unclamped Energy Waveforms

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

Test Circuit and Waveforms

th

JUNCTION

REV 25 April 2002

ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
CTHERM1 th 6 1.3e -2
CTHERM2 6 5 8.8e -4
CTHERM3 5 4 8.8e -3
CTHERM4 4 3 3.9e -1
CTHERM5 3 2 3.6e -1
CTHERM6 2 tl 1.9e -1

RTHERM1

CTHERM1

RTHERM1 th 6 1.2e -1
RTHERM2 6 5 3.2e -1
RTHERM3 5 4 1.7e -1
RTHERM4 4 3 1.2e -1
RTHERM5 3 2 1.3e -1
RTHERM6 2 tl 2.5e -1

RTHERM2

CTHERM2

SABER Thermal Model

SABER thermal model
ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.3e -3
ctherm.ctherm2 6 5 = 8.8e -4
ctherm.ctherm3 5 4 = 8.8e -3
ctherm.ctherm4 4 3 = 3.9e -1
ctherm.ctherm5 3 2 = 3.6e -1
ctherm.ctherm6 2 tl = 1.9e -1

RTHERM3

CTHERM3

RTHERM4

CTHERM4

rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 3.2e -1
rtherm.rtherm3 5 4 = 1.7e -1
rtherm.rtherm4 4 3 = 1.2e -1
rtherm.rtherm5 3 2 = 1.3e -1
rtherm.rtherm6 2 tl = 2.5e -1
}

RTHERM5

CTHERM5

CTHERM6

RTHERM6

tl

2002 Fairchild Semiconductor Corporation

CASE

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

SPICE Thermal Model

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
ISOPLANAR
LittleFET
MicroFET
MicroPak

MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series

SILENT SWITCHER UHC

SMART START
UltraFET
SPM
VCX
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5