ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /

ISL9V3040S3
EcoSPARK® 300mJ, 400V, N-Channel Ignition IGBT
General Description Formerly Developmental Type 49362

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and Applications

ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as • Automotive Ignition Coil Driver Circuits
well as the industry standard D²-Pak (TO-263), and TO-262 and TO- • Coil- On Plug Applications
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide Features
voltage clamping without the need for external components.
• Space saving D-Pak package availability
EcoSPARK® devices can be custom made to specific clamp
• SCIS Energy = 300mJ at TJ = 25oC
voltages. Contact your nearest On Semiconductor sales office for
more information. • Logic Level Gate Drive

Package Symbol
JEDEC TO-263AB JEDEC TO-220AB
D²-Pak EC
G
COLLECTOR
G
E
R1
GATE
JEDEC TO-252AA JEDEC TO-262AA
D-Pak EC R2

G
G EMITTER
E

COLLECTOR
(FLANGE)

Device Maximum
Ratings
Symbol TA = 25°C unless Parameter Ratings Units
otherwise
BV CERnotedCollector to Emitter Breakdown Voltage (IC = 1 mA) 430 V
BV ECS Emitter to Collector Voltage - Reverse Battery Condition (I C = 10 mA) 24 V
E SCIS25 At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ
E SCIS150 At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ
IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 21 A
I C110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A
VGEM Gate to Emitter Voltage Continuous ±10 V
PD Power Dissipation Total TC = 25°C 150 W
Power Dissipation Derating TC > 25°C 1.0 W/°C
TJ Operating Junction Temperature Range -40 to 175 °C
TSTG Storage Junction Temperature Range -40 to 175 °C
TL Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500 4 kV

©2013 Semiconductor Components Industries, LLC. Publication Order Number:

October-2017, Rev. 3 ISL9V3040P3/D
 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
V3040D ISL9V3040D3ST TO-252AA 330mm 16mm 2500
V3040S ISL9V3040S3ST TO-263AB 330mm 24mm 800
V3040P ISL9V3040P3 TO-220AB Tube N/A 50
V3040S ISL9V3040S3 TO-262AA Tube N/A 50
V3040D ISL9V3040D3S TO-252AA Tube N/A 75
V3040S ISL9V3040S3S TO-263AB Tube N/A 50

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BV CER
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, 370 400 430 V
RG = 1K See Fig. 15
TJ = -40 to 150°C
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, 390 420 450 V
BV CES
RG = 0 See Fig. 15
TJ = -40 to 150°C
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, 30 - - V
BV ECS
TC = 25°C
BV GES Gate to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V
Collector to Emitter Leakage Current V CER = 250V, TC = 25°C - - 25 µA
ICER
RG = 1K TC = 150°C - - 1 mA
See Fig. 11
Emitter to Collector Leakage Current VEC = 24V, See TC = 25°C - - 1 mA
IECS
Fig. 11 TC = 150°C - - 40 mA
R1 Series Gate Resistance - 70 - 
R2 Gate to Emitter Resistance 10K - 26K 
On State Characteristics
Collector to Emitter Saturation Voltage IC = 6A, TC = 25°C, - 1.25 1.60 V
VCE(SAT)
VGE = 4V See Fig. 3
Collector to Emitter Saturation Voltage IC = 10A, TC = 150°C, - 1.58 1.80 V
VCE(SAT)
VGE = 4.5V See Fig. 4
VCE(SAT)
Collector to Emitter Saturation Voltage IC = 15A, TC = 150°C - 1.90 2.20 V
VGE = 4.5V
Dynamic Characteristics
Gate Charge IC = 10A, VCE = 12V, - 17 - nC
Q G(ON)
VGE = 5V, See Fig. 14
Gate to Emitter Threshold Voltage IC = 1.0mA, TC = 25°C 1.3 - 2.2 V
V GE(TH)
V CE = VGE, TC = 150°C 0.75 - 1.8 V
See Fig. 10
VGEP Gate to Emitter Plateau Voltage IC = 10A, V CE = 12V - 3.0 - V

Switching Characteristics
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1 - 0.7 4 µs
Current Rise Time-Resistive VGE = 5V, RG = 1K - 2.1 7 µs
trR
TJ = 25°C, See Fig.
12

td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy - 4.8 15 µs

tfL
Current Fall Time-Inductive VGE = 5V, RG = 1K - 2.8 15 µs
TJ = 25°C, See Fig. 12
SCIS Self Clamped Inductive Switching TJ = 25°C, L = 3.0 mHy, - - 300 mJ
Thermal Characteristics RG = 1K VGE = 5V, See
R JC Thermal Resistance Junction-Case Fig. 1&2
All packages - - 1.0 °C/W

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 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves
30 30
RG = 1k, VGE = 5V,Vdd = 14V RG = 1k, VGE = 5V,Vdd = 14V
ISCIS, INDUCTIVE SWITCHING CURRENT (A)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

25 25

20 20

15 15
TJ = 25°C
T J = 25°C
TJ = 150°C
10 10
TJ = 150°C

5 5
SCIS Curves valid for Vclamp Voltages of <430V SCIS Curves valid for Vclamp Voltages of <430V
0 0
0 25 50 75 100 125 150 175 200 0 2 4 6 10
8
t CLP , TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching Figure 2. Self Clamped Inductive Switching
Current vs Time in Clamp Current vs Inductance

1.30 1.8
ICE = 6A
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VGE = 3.7V ICE = 10A
VGE = 4.0V
1.7
1.26 VGE = 3.7V

1.6 VGE = 4.0V

1.22 1.5

1.4
V GE = 4.5 V VGE = 4.5V
1.18
V = 5.0V
VGE = 5.0V
GE
VGE = 8.0V 1.3
VGE = 8.0V

1.14
1.2
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Collector to Emitter On-State Voltage Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature vs Junction Temperature

25 25
ICE, COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE = 8.0V VGE = 8.0V

VGE = 5.0V VGE = 5.0V

20 20
VGE = 4.5V VGE = 4.5V
VGE = 4.0V VGE = 4.0V

15 VGE = 3.7V 15 VGE = 3.7V

10 10

5 5

TJ = - 40°C TJ = 25°C

0 0
0 1.0 2.0 3.0 0 1.0 2.0 3.0
4.0 4.0

VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage
vs Collector Current vs Collector Current

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 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)

25 25
DUTY CYCLE < 0.5%, V CE = 5V

ICE , COLLECTOR TO EMITTER CURRENT (A)

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE = 8.0V
PULSE DURATION = 250µs
VGE = 5.0V
20 20
VGE = 4.5V
VGE = 4.0V

15 VGE = 3.7V 15

TJ = 150°C
10 10

TJ = 25°C

5 5

TJ = 175°C TJ = -40°C
0 0
0 1.0 2.0 3.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
4.0
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
Figure 7. Collector to Emitter On-State Voltage
vs Collector Current
25 2.2
VGE = 4.0V VCE = VGE
ICE, DC COLLECTOR CURRENT (A)

20 2.0 ICE = 1mA

VTH , THRESHOLD VOLTAGE (V)

1.8
15

1.6

10
1.4

5
1.2

0 1.0
25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (°C) TJ JUNCTION TEMPERATURE (°C)

Figure 9. DC Collector Current vs Case Figure 10. Threshold Voltage vs Junction

Temperature Temperature
10000 12
ICE = 6.5A, VGE = 5V, RG = 1K
V 24V
ECS =
Resistive tOFF
1000 10
LEAKAGE CURRENT (µA)

Inductive tOFF
SWITCHING TIME (µS)

100 8

10 6

VCE S = 300 V
1 4
= 250V Resistive tON
V CES

0.1 2
-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature Figure 12. Switching Time vs Junction
Temperature

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 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Typical Performance Curves (Continued)

1600 8
FREQUENCY = 1 MHz IG(REF) = 1mA, RL = 1.25 TJ = 25°C
7

VGE, GATE TO EMITTER VOLTAGE (V)

1200 6
C, CAPACITANCE (pF)

CIES
5
VCE = 12V
800 4

CRES
400 2
VCE = 6V
COES 1

0 0
0 5 10 15 20 25 0 4 8 12 16 20 24 28 32

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

Figure 13. Capacitance vs Collector to Emitter Figure 14. Gate Charge

Voltage

430
ICER = 10mA
425
BVCER , BREAKDOWN VOLTAGE (V)

420
TJ = - 40°C
415 TJ = 175°C

T J = 25 °C
410

405

400

395

390
10 100 1000 2000 3000

RG, SERIES GATE RESISTANCE (k)

Figure 15. Breakdown Voltage vs Series Gate Resistance

ZthJC , NORMALIZED THERMAL RESPONSE

100 0.5

0.2
0.1
10-1 0.05
t1
0.02
PD
0.01
t2
10-2

DUTY FACTOR, D = t1 / t2
PEA =
SINGL E PULS E K TJ (PD X ZJC X RJC) + TC

10-3
10-6 10-5 10-4 10-3 10-2 10-1

T1, RECTANGULAR PULSE DURATION (s)

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

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 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
Test Circuit and Waveforms

L
VCE R
or LOAD
L
C
C
RG
PULSE RG= 1K
G DUT G +
GEN DUT V CE

5V -
E
E

Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit

V CE BV CES

tP
L VCE

IAS
C
VARY tP TO OBTAIN +
VDD
RG
REQUIRED PEAK IAS G VDD
DUT -
VGE

E
tP
0V IAS 0
0.01
tAV

Figure 19. Energy Test Circuit Figure 20. Energy Waveforms

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 ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
SPICE Thermal Model
REV 7 March 2002
th JUNCTION
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3

CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1 RTHERM1 CTHERM1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6

RTHERM1 th 6 1.2e -1 6
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM2 CTHERM2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3

SABER Thermal Model 5

SABER thermal model

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3 RTHERM3 CTHERM3
template thermal_model th tl
thermal_c th, tl
{
4
ctherm.ctherm1 th 6 = 2.1e
-3
ctherm.ctherm2 6 5 = 1.4e
-1 RTHERM4 CTHERM4
ctherm.ctherm3 5 4 = 7.3e
-3
ctherm.ctherm4 4 3 = 2.2e
-1
rtherm.rtherm1 th 6 = 1.2e -1 3
ctherm.ctherm56352==1.1e
rtherm.rtherm2 1.9e -1
rtherm.rtherm3
ctherm.ctherm6524tl==2.2e6.2e-1
rtherm.rtherm4
+6 4 3 = 6.0e -2
RTHERM5 CTHERM5
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
2

RTHERM6 CTHERM6

tl CASE

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