SAMWIN SW10N65

N-channel MOSFET
TO-220F TO-220
BVDSS : 650V
Features
ID : 10.0A
■ High ruggedness RDS(ON) : 1.1ohm
■ RDS(ON) (Max 1.1Ω)@VGS=10V
■ Gate Charge (Typ 47nC)
■ Improved dv/dt Capability 1 1 2
2 2
■ 100% Avalanche Tested 3 3

1. Gate 2. Drain 3. Source 1

General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.

Order Codes
Item Sales Type Marking Package Packaging
1 SW P 10N65 SW10N65 TO-220 TUBE
2 SW F 10N65 SW10N65 TO-220F TUBE

Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220 TO-220F
VDSS Drain to Source Voltage 650 V
Continuous Drain Current (@TC=25oC) 10.0 10.0* A
ID
Continuous Drain Current (@TC=100oC) 5.7 5.7* A
IDM Drain current pulsed (note 1) 36 A
VGS Gate to Source Voltage ± 30 V
EAS Single pulsed Avalanche Energy (note 2) 700 mJ
EAR Repetitive Avalanche Energy (note 1) 15.6 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns
Total power dissipation (@TC=25oC) 156 50* W
PD
Derating Factor above 25oC 1.25 0.4 W/oC
TSTG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC

Maximum Lead Temperature for soldering oC

TL 300
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.

Thermal characteristics
Value
Symbol Parameter Unit
TO-220 TO-220F
Rthjc Thermal resistance, Junction to case 0.8 2.5 oC/W

Rthcs Thermal resistance, Case to Sink 0.5 oC/W

Rthja Thermal resistance, Junction to ambient 62.5 oC/W

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 SAMWIN SW10N65
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol Parameter Test conditions Min. Typ. Max. Unit
Off characteristics
BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 650 - - V

ΔBVDSS Breakdown voltage temperature

ID=250uA, referenced to 25oC - 0.56 - V/oC
/ ΔTJ coefficient

VDS=650V, VGS=0V - - 1 uA
IDSS Drain to source leakage current
VDS=520V, TC=125oC - - 50 uA
Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA
IGSS
Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA
On characteristics
VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.0 - 4.0 V
RDS(ON) Drain to source on state resistance VGS=10V, ID = 5.0A 0.85 1.1 Ω
Dynamic characteristics
Ciss Input capacitance 1740 2530
Coss Output capacitance VGS=0V, VDS=25V, f=1MHz 156 205 pF
Crss Reverse transfer capacitance 37 42
td(on) Turn on delay time 60
tr Rising time 180
VDS=300V, ID=10A, RG=25Ω ns
td(off) Turn off delay time 200
tf Fall time 120
Qg Total gate charge 37 60
Qgs Gate-source charge VDS=520V, VGS=10V, ID=10A 10 - nC
Qgd Gate-drain charge 25 -

Source to drain diode ratings characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit
IS Continuous source current Integral reverse p-n Junction - - 10 A
ISM Pulsed source current diode in the MOSFET - - 36 A
VSD Diode forward voltage drop. IS=10A, VGS=0V - - 1.5 V
Trr Reverse recovery time IS=10A, VGS=0V, - 470 - ns
Qrr Breakdown voltage temperature dIF/dt=100A/us - 4.3 - uC
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 14.2mH, IAS = 10.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 10.0A, di/dt = 200A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.

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 SAMWIN SW10N65
Fig. 1. On-state characteristics Fig. 2. Transfer characteristics

Top : VGS
15.0V
10.0V
1 9.0V
10 10
1
8.0V
6.0V
5.0V
ID, Drain Current [A]

ID, Drain Current [A]

Bottom :

o
150 C
0
10
0
10
o
25 C
o
-55 C
*. Notes :
1. 250¥‫ى‬s Pulse Test *. Notes :
o 1. VDS = 50V
-1
10 2. TC = 25 C
2. 250us Pulse Test
-1
10
10
-1
10
0
10
1 2 3 4 5 6 7 8 9 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Fig. 3. On-resistance variation vs. Fig. 4. On state current vs.

drain current and gate voltage diode forward voltage
2.5
Drain-Source On-Resistance [¥‫]ط‬

1
10
IDR, Reverse Drain Current [A]

2.0

o
VGS = 10V 150 C
1.5
RDS(ON),

o
25 C
0
1.0 VGS = 20V 10

0.5
*. Notes :
1. VGS = 0V
o
،‫ ط‬Note : TJ = 25 C 2. 250us Pulse Test
-1
0.0 10
0 5 10 15 20 25 0.2 0.4 0.6 0.8 1.0 1.2

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Fig. 5. Capacitance characteristics Fig. 6. Gate charge characteristics

(Non-Repetitive)

3000 12
Ciss=Cgs+Cgd(Cds=shorted)
2750 VDS = 120V
Coss=Cds+Cgd
VGS, Gate-Source Voltage [V]

2500 Crss=Cgd 10
VDS = 300V
2250
Capacitance [pF]

*. Notes :
2000 1. VGS = 0V 8 VDS = 520V
Ciss 2. f=1MHz
1750

1500 6

1250
Coss 4
1000

750
Crss 2
500
*. Note : ID = 8.0A
250
0
0 0 10 20 30 40
5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

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 SAMWIN SW10N65
Fig 7. Breakdown Voltage Variation Fig. 8. On resistance variation
vs. Junction Temperature vs. junction temperature

1.2 3.0
Drain-Source Breakdown Voltage

Drain-Source On-Resistance
2.5
BVDSS, (Normalized)

1.1

RDS(on), (Normalized)
2.0

1.0 1.5

1.0
0.9 *. Notes : *. Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5 2. ID = 5.0 A
2. ID = 250 uA

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig. 9. Maximum drain current vs. Fig. 10. Maximum safe operating area
case temperature.
2
10 10
Operation in This Area
is Limited by R DS(on)

8
1
100 s
10
ID, Drain Current [A]
ID' Drain Current [A]

1 ms

6 10 ms

10
0
DC

-1
10
2 *. Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
-2
3. Single Pulse
0 10
0 1 2 3
25 50 75 100 125 150 10 10 10 10

o VDS, Drain-Source Voltage [V]

TC' Case Temperature [ C]

Fig. 11. Transient thermal response curve

0
10
Z¥èJC (t), Thermal Response

D=0.5

*. Notes :
0.2 o
1. Z¥èJC(t) = 0.85 C/W Max.
-1 2. Duty Factor, D=t1/t2
10 0.1
3. TJM - TC = PDM * Z¥èJC(t)
0.05
t1
0.02
0.01 t2
single pulse
-2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1, Square Wave Pulse Duration [sec]

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SAMWIN SW10N65

Fig. 12. Gate charge test circuit & waveform

Same type VGS

as DUT
QG

VDS
QGS QGD

DUT
VGS

1mA
Charge

Fig. 13. Switching time test circuit & waveform

VDS 90%
RL

RG VDS

VDD
VIN 10% 10%

10VIN DUT td(on) tr td(off) tf

tON tOFF

Fig. 14. Unclamped Inductive switching test circuit & waveform

1 BVDSS
EAS = L X IAS2 X
L 2 BVDSS - VDD
BVDSS
IAS
IAS
VDS
RG VDD
ID(t)
DUT
10VIN VDS(t)

tp time

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SAMWIN SW10N65

Fig. 15. Peak diode recovery dv/dt test circuit & waveform

DUT + V VGS (DRIVER) 10V

DS

-
IS L di/dt
IS (DUT)

VDS IRM

RG VDD Diode reverse current

Diode recovery dv/dt

10VGS Same type
as DUT
VDS (DUT) VF VDD

*. dv/dt controlled by RG
*. Is controlled by pulse period Body diode forward voltage drop

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 SAMWIN SW10N65
REVISION HISTORY

Revision No. Changed Characteristics Responsible Date Issuer

REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ

REV 2.0 Updated the format of datasheet and added Alice Nie 2011.03.24 XZQ
Order Codes.

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