2SJ412

Silicon P Channel MOS Type (L2--MOSV)

TOSHIBA Field Effect Transistor

2SJ412
DC-DC Converter, Relay Drive and Motor Drive
Applications

Unit: mm

4-V gate drive

Low drain-source ON resistance: RDS (ON) = 0.15 (typ.)

High forward transfer admittance: |Yfs| = 7.7 S (typ.)

Low leakage current: IDSS = 100 A (max) (VDS = 100 V)

Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

100

Drain-gate voltage (RGS = 20 k)

VDGR

100

Gate-source voltage

VGSS

20

(Note 1)

ID

16

Pulse (Note 1)

IDP

64

Drain power dissipation (Tc = 25C)

PD

60

Single pulse avalanche energy

(Note 2)

EAS

292

mJ

Avalanche current

IAR

16

Repetitive avalanche energy (Note 3)

EAR

mJ

Channel temperature

Tch

150

Storage temperature range

Tstg

55 to 150

DC

Drain current

JEDEC

JEITA

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).

Thermal Characteristics
JEDEC

Symbol

Max

Unit

JEITA

Thermal resistance, channel to case

Rth (ch-c)

2.08

C/W

TOSHIBA

Thermal resistance, channel to ambient

Rth (ch-a)

83.3

C/W

Characteristics

2-10S2B

Weight: 1.5 g (typ.)

Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: VDD = 25 V, Tch = 25C (initial), L = 1.84 mH, RG = 25 , IAR = 16 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.

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2SJ412
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = 16 V, VDS = 0 V

10

Drain cut-off current

IDSS

VDS = 100 V, VGS = 0 V

100

ID = 10 mA, VGS = 0 V

100

VDS = 10 V, ID = 1 mA

Drain-source breakdown voltage

Gate threshold voltage

V (BR) DSS
Vth

Gate-source ON resistance

RDS (ON)

Forward transfer admittance

|Yfs|

Input capacitance

Ciss

Reverse transfer capacitance

Crss

Output capacitance

Coss
Rise time

0.8

2.0

VGS = 4 V, ID = 6 A

0.25

0.32

VGS = 10 V, ID = 6 A

0.15

0.21

VDS = 10 V, ID = 6 A

4.5

7.7

1100

pF

210

pF

440

pF

18

30

VDS = 10 V, VGS = 0 V, f = 1 MHz

tr

ID = 8 A

0V

ton

Fall time

50

Switching time
tf

Turn-off time
Total gate charge

toff

RL = 6.25

Turn-on time

VGS
10 V

VOUT

Gate-source charge

Qgs

Gate-drain (miller) charge

Qgd

ns

18

65

48

nC

29

nC

19

nC

VDD 50 V
Duty 1%, tw = 10 s

Qg

(gate-source plus gate-drain)

VDD 80 V, VGS = 10 V, ID = 16 A

Source-Drain Rating and Characteristics (Ta = 25C)

Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)

Symbol

Test Condition

Min

Typ.

Max

Unit

IDR

16

IDRP

64

Forward voltage (diode)

VDSF

IDR = 16 A, VGS = 0 V

1.7

Reverse recovery time

trr

IDR = 16 A, VGS = 0 V

160

ns

Reverse recovery charge

Qrr

dIDR/dt = 50 A/s

0.5

Marking

J412

Note 4: A line under a Lot No. identifies the indication of product

Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code)
Lot No.
Note 4

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.

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2SJ412

ID VDS

ID VDS

20
4

10

Common source
Tc = 25C
Pulse test

16

Drain current ID (A)

Drain current ID (A)

Common source
Tc = 25C
Pulse test

2.5
2

6
4.0
10

12
3.5
8
3
4

2.5

VGS = 2 V

VGS = 2 V
0
0

0.4

0.8

1.2

Drain-source voltage

0
0

2.0

1.6

VDS (V)

Common source
VDS = 10 V
Pulse test

VDS (V)

25
Tc = 55C
100

0
0

Gate-source voltage

2.4

0.8

2
0
0

ID = 8 A

1.6

VGS (V)

16

20

VGS (V)

RDS (ON) ID

30

2.0
Common source
VDS = 10 V
Pulse test

10

Drain-source on resistance
RDS (ON) ()

|Yfs| (S)

12

Gate-source voltage

|Yfs| ID

Forward transfer admittance

VDS (V)

Common source
Tc = 25C
Pulse test

3.2

10

VDS VGS

Drain-source voltage

Drain current ID (A)

Drain-source voltage

ID VGS
10

Tc = 55C

25

100

5
3

1.0

Common source
Tc = 25C
Pulse test

0.5
0.3

VGS = 4 V
10

0.1

0.05
1
0.3

1.0

10

0.03
0.1

20

Drain current ID (A)

0.3

1.0

10

20

Drain current ID (A)

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2SJ412

IDR VDS
30
Common source

Common source
Pulse test

Tc = 25C

(A)

ID = 8 A

0.4

0.3
2, 4
0.2

VGS = 4 V

0.1

0
80

Pulse test
10

Drain reverse current IDR

Drain-source on resistance RDS (ON)

()

RDS (ON) Tc
0.5

3
1.0

VGS = 10 V

0.5

40

0.3
0

40

80

120

160

VGS = 10 V

0, 1

1
0.4

0.2

Case temperature Tc (C)

0.6

Drain-source voltage

Vth (V)

500

Gate threshold voltage

(pF)
Capacitance C

Ciss

1000

Coss

300
Common source

30
0.1

VGS = 0 V

Crss

f = 1 MHz
Tc = 25C
0.3

Drain-source voltage

1.0

VDS (V)

Common source
VDS = 10 V
ID = 1 mA
Pulse test

3000

50

0.8

Vth Tc

Capacitance VDS
5000

100

10

30

100

VDS (V)

0
80

40

40

80

120

160

Case temperature Tc (C)

PD Tc

Dynamic Input/Output Characteristic

40

20

0
0

40

80

120

80

60

Case temperature Tc (C)

VDD = 80 V

16

12

20 V
40

40 V

20

4
VGS

0
0

160

VDS

20

20

40

60

80

VGS (V)

60

Common source
ID = 16 A
Tc = 25C
Pulse test

Gate-source voltage

VDS (V)

100

Drain-source voltage

Drain power dissipation PD (W)

80

0
100

Total gate charge Qg (nC)

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2SJ412

Normalized transient thermal impedance

rth (t)/Rth (ch-c)

rth tw
3

1
Duty = 0.5

0.5
0.3

0.2
PDM

0.1
0.1
0.05

0.05
0.02

0.01

Duty = t/T
Rth (ch-c) = 2.08C/W

0.03
Single pulse

0.01
10

100

1m

10 m

Pulse width

100 m

tw (s)

Safe Operating Area

EAS Tch
500

IC max (pulsed)*

50

Drain current ID (A)

Avalanche energy EAS (mJ)

300

100

10

100 s*

30

1 ms*

ID max (continuous)

10 ms*
10
5

DC operation
Tc = 25C

400

300

200

100

1
*: Single nonrepetitive pulse
Tc = 25C
0.3 Curves must be derated
linearly with increase in
temperature.
0.5

0.1
0.3

10

Drain-source voltage

0
25

50

100

100

125

Channel temperature Tch

VDSS max
30

75

150

(C)

300

VDS (V)

15 V

BVDSS
IAR

15 V
VDD
TEST CIRCUIT
RG = 25
VDD = 25 V, L = 1.84 mH

VDS

WAVE FORM

1 2
B VDSS

AS = LI

B
V
DD
VDSS

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2SJ412
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively TOSHIBA), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively Product) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBAs written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Products quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA
Semiconductor Reliability Handbook and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS PRODUCT DESIGN OR APPLICATIONS.
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
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any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

2009-09-29