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Franco Maloberti
Basic op-amp
The ideal operational amplifier is a voltage controlled
voltage source with infinite gain, infinite input impedance
and zero output impedance.
Z4 Z1 + Z2 Z2
V0 = V2 V1
Z3 + Z4 Z1 Z1
C1 + C // C0
C
Vo (0 ) = Vi (0 )
+ +
C0 + C
C1 + C
Vi () = Vin
C1 + C(1+ gm r0 )
Vo () = Vi () gm r0
C0
gm
Phase margin:
It is the phase shift of the small-signal differential gain
measured at the unity gain frequency. A phase margin
smaller than 60 causes ringing in the output response.
Settling time:
The settling time is the time required to settle the output
within a given range (usually 0.1%) of the final value.
Power dissipation:
It depends on speed and bandwidth requirements.
Typically, for 3.3 V supply, it is around 1 mW.
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
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Typical parameters of a 0.25 m OTA
Feature Value Unit
DC gain 80 dB
CMRR 40 dB
Offset 4-6 mV
Bandwidth 100 MHz
Slew-rate 3 V/s
Settling time: 1 V, CL = 4 pF 300 ns
PSRR @ DC 90 dB
PSRR @ 1 kHz 60 dB
PSRR @ 100 kHz 30 dB
Input referred noise (white) 100 nV/Hz
Corner frequency 1 kHz
Supply voltage 3.3 V
Input common mode voltage 1.5 V
Output dynamic range 2.2 Vpp
Power consumption 1 mW
Silicon area 2000 m2
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
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Basic architecture
W W W
2 2n p Cox L 1 L 5 L B 1
=
( n + p )2 W W IBias
L 6 L 7
g g
ACM = ACM1ACM2 = ds7
m5
2gm1 gds5 + gds6
Av 2gm1gm3
CMRR = =
ACM gds7 (gds2 + gds 4 )
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
Franco Maloberti 16
Offset:
The offset is composed of two terms:
systematic offset
random offset
The systematic offset can be reduced to zero with a
careful design. A necessary condition to have zero
systematic offset, is that the currents of M5 and M6 are
equal, when the inputs are connected to the same voltage.
Assuming all the transistors in saturation this condition is:
I
(W L)
=I
(W L) (W L)
6 7 5
Bias Bias
(W L) (W L) (W L)
B B 3
1
(W L) (W L) = 2 (W L) (W L)
3 6 7 5
I Vos1 I Vos1 I1
Bias
2
gm1
2
( )
1+ = Bias
2
+ gm2
2
Vos1
gm1
BJT:
I1
26 mV
gm1
Assuming = 0.01:
Vos,BJT = 0.26 mV
Vos,MOS = 1.5 3 mV
(
W / L ) 2 W / L W / L gds6 + gds7
( )( )
B 4 B
b) high frequency:
vo,n,1 = in,Ref
(W / L) 6 1
(W / L) gm5
B
1 gm2Cc gm2
p1 p2 z=
R1R2gm2Cc C1C2 + (C1 + C2 )Cc Cc
since in practice Cc > C1, Cc C2, gm1 > 1/R1, gm2 > 1/R2 it
results:
1 gm2 1
p1 << p2 >>
R1C1 C2 R2C2
Assuming p1 as dominant, the unity gain angular frequency
is:
1 gm1
T = p1 A0 gm1gm2R1R2 =
R1R2gm2Cc Cc
p2 gm2Cc
= for stability > 2 to 4
T gm1C2
Disadvantages:
Area
Power dissipation
Actually it creates a doublet in the feedback path.
Potentially not stable.
Alternative, a substrate emitter follower may be used.
(The bipolar transistor is smaller and has higher gm.)
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
Franco Maloberti 31
Solution 2: Zero nulling resistor
1
z=
( )
1/ gm2 Rz Cc
1 1 1
= +
Rz Rn Rp
Telescopic cascode
Mirrored cascode
Folded cascode
Two stages:
Voltage gain less affected by resistive loading
Maximum signal swing
Less bussing of bias lines
Requires an additional capacitor for frequency
compensation
More power consumption
gm8 + gm9
A2 =
gds8 + gds9
2L
VDD VTh,p 2VTh,n I6
kn W 6
I9 =
2L 2L
+
kn W 8 kn W 9
2 W 2 W
VB Vin = VGS1 + VGS3 = VTh,n + VTh,p + + I1
kn L k
p L
3 1
It results:
Iout = K8,9 (I1 - I2) = K8,9 VB Vin
Until I1 or I2 goes to zero, for a
larger Vin, Iout increases
quadratically with Vin.
Small signal gain:
Av = 2 Gm rout
( )
gm2 Vin VA = gm4VA
gm2Vin
VA =
gm2 + gm4
gm2gm4
Iout = gm4VA = Vin = GmVin
gm2 + gm4
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
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Fully differential op-amps
The use of fully differential paths in analog signal
processing gives benefits on:
PSRR
dynamic range
clock feedthrough cancellation
Consider an integrator and its fully differential version:
continuous time
sampled data
ID
gm = gds = ID
nVT
B gm1 B
Av = =
gds6 + gds8 nVT n + p ( )
high dc gain (Av 60 dB)
Basic idea:
Generate |I1 - I2| and increase the current in the differential
stage by k|I1 - I2|.
W 2
8kT KF 1 1
gm = 2Cox I v =
n + f
L 3gm 2Cox WL f
2
2
2 gm4 2
vn,in = 2 vn1 + v
n4
gm1
8 kT 2
2 df
v 2
n2 (
= 2 1+ ) v n0 = v n2
3 gm2 0 1+ s / p2
+
gm2 4 kT
p2 =
C1 + C2
2
vn0 =
3
(
1+
C1 + C2
)
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
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Layout
Rules:
Use poly connections only for voltage signals, never for
currents, because the offset RI 15 mV.
Minimize the line length, especially for lines connecting
high impedance nodes.
Use matched structure (necessary common centroid).
Respect symmetries (even respect power devices).
Only straight-line transistors.
Separate (or shield) the input from the output line, to
avoid feedback.
Shield high impedance nodes to avoid noise injection
from the power supply and the substrate.
Regular shapes and layout oriented design.
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
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Stacked layout:
Csb = Cdb = CjbW (d + 2x j )
Structure A:
1 W
Csb = Cdb = Cjb (d + 2x j )
2 2
Structure B:
2W
Csb = Cdb = Cjb (d + 2x j )
3
Capacitances are
further reduced if the
diffusion area is shared
between different
transistors.
Analog Design for CMOS VLSI Systems 5. CMOS Operational Amplifiers
Franco Maloberti 77
Key point: use of equal width transistors
Transistors with arbitrary width are not allowed.