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VCC
R3
R1 130
1. 6 k
RB N5
N3
4k T4
N1
N6
Input 1 N2
T2 N7 Output
Input 2 T1
(no load)
N4
T3
R2
1k
2
3.3. Circuit Analysis
It is of interest to examine the conditions for the different logic states
of the NAND Gate circuit, particularly with regard to estimating the
power consumption in each state. This can be done by first
establishing the voltages at each of the nodes N1 N7 in the circuit
and then finding the total current drawn from the power supply.
VCC
IB I1 I3
R3
R1 130
1.6k N5
RB
N3
4k T4
N1
N6
Input 1 0.1 V N2
Input 2 N7 Output
T1 (no load)
N4
R2
1k
Fig. 3.3 NAND Gate Circuit Redrawn with at least One Input LO
3
(i) T1 ON in forward mode and is operating in saturation as there is
only a leakage current from T2 available as collector current, i.e. T1
operates with a large base current and negligible collector current
where IC MAX = 0. The input logic LO voltage is taken as 0.1V. Then:
(iii) With T4 operating at the point of cut-in its base current and hence
its collector current can
be taken as zero. This means that there is no voltage drop across
either resistor R1 or R3
and so the potential at both sides of these resistors is equal to
the supply voltage VCC giving:
Node N4 : VN4 = 0V
4
The current drawn from the supply can then be obtained as:
The power consumption of the gate with the output in the logic Hi
state can then be obtained as:
VCC
I1 I3
R3
IB
130
R1
N5
1.6k
RB
N3
4k
N1 N6
Input 1 5V N2
T2 N7 Output
Input 2 T1
5V (no load)
N4
T3
R2
1k
5
(i) With T3 ON and operating in saturation:
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The current drawn from the supply this time is given by the sum of IB
and I1 with I3 = 0:
Then:
VCC VN1 5 2.3V
IB = = = 0.675mA
RB 4k
and
If the NAND gate is assumed to spend half of its time in each logic
state then the average power consumption can be expressed as: