PV array consists of series and parallel connected solar cells which are basically p-n junction.

The equivalent
circuit of PV cell is categorized into two types i.e., single diode model and double diode model. The later
requires more parameters for accurate modelling, high computational burden and thus single diode model is
preferred for design and simulation of PV system.

The I-V characteristics for single diode equivalent model, shown in Figure xx can be expressed as

VPV  I PV  Rs
I PV  I pn  I D  ---------------------------------------------------1
Rsh

Taking ns and n p numbers of cells connected in series and parallel, (1) can be rewritten as

VPV  I PV  Rs  N r
I PV  n p I pn  n p I D  -----------------------------------2
Rp  N r

Where current through the diode, according to Shockley equation is given by

q (VPV  I PV Rs )

I D  I o [e AkTns
 1] -------------------------------------------------------------------3

Where I o is the diode reverse saturation current.

q is the electron charge

K is the Boltzmann constant

A represents diode ideality constant.

I o can be calculated from (4)

3 qE  1 1 
 T  Ak  T T 
I o  I on  n  e   --------------------------------------------4
n

T 
The photo current I pn varies linearly with solar insolation and is also a function of temperature. It is expressed
as

I pn  I phn  Ki T 
G
Gn

Where T  T  Tn

Where Ki is the current temperature co-efficient,

G is the insolation and the suffix n represents corresponding nominal values.

In this study, for series connected module (4S) configuration as shown in Figure xx is considered.