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  • Sheet 6: I.Solve The Following Problems

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    Ayman ElAshmawy
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    This document is an electronics worksheet that contains 8 practice problems for students to solve related to diodes, p-n junctions, and basic circuit analysis. The problems cover calculating built-in junction voltage, determining current using diode models, analyzing circuits containing diodes, and determining output voltages of different diode-based circuits and logic gates.

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    sheet 6

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    This document is an electronics worksheet that contains 8 practice problems for students to solve related to diodes, p-n junctions, and basic circuit analysis. The problems cover calculating built-in junction voltage, determining current using diode models, analyzing circuits containing diodes, and determining output voltages of different diode-based circuits and logic gates.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    35 views3 pages

    Sheet 6: I.Solve The Following Problems

    Uploaded by

    Ayman ElAshmawy
    This document is an electronics worksheet that contains 8 practice problems for students to solve related to diodes, p-n junctions, and basic circuit analysis. The problems cover calculating built-in junction voltage, determining current using diode models, analyzing circuits containing diodes, and determining output voltages of different diode-based circuits and logic gates.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 3

    EC341 – Sheet No.

    4 - 1/3

    Arab Academy for Science & Technology


    and Maritime Transport – Cairo Branch
    College of Engineering & technology
    Department:Electronics & Communication Engineering Department
    Lecturer:Dr. Mostafa Fedawy
    Course Title: Electronics 1
    Course Code: EC 238

    Sheet 6
    I.Solve the following problems:
    1- A Si p-n junction has the following: ND = 4x1024 m-3 in the n-side, NA=2x1022 m-3 in the p-side.
    Calculate the built-in junction voltage.
    2- A Si p-n junction has the following : NA=5x1015 cm-3 and the built-in junction voltage is equal to
    0.742 V. Find the doping concentration ND
    3- Determine the current I for each of the following configurations using the approximate equivalent
    model for the diode.

    4-Determine the current ID and V0 for each of the following configurations using the approximate
    equivalent model for the diode.
    EC341 – Sheet No.4 - 2/3

    5-Determine Vo and ID for the networks of the next figures:

    6-Determine Vo and ID for the networks of the next figures:

    7-Determine the level of Vo for the following gates


    EC341 – Sheet No.4 - 3/3

    8-Determine the output voltage for the shown networks:

    ii

    iii

    iv

    Clampers:

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