PN - JUNCTION DIODE

Problem: Given Na  1016 cm3 and Nd  1017 cm 3 calculate the intrinsic carrier
concentration and Vbi for Ge and GaAs at 300K?

Answer:
Material Eg  ev  
3
B(cm3 K 2 )
Si 1.1 5.23 1015
GaAs 1.4 1.6  1015
Ge 0.66 1.66  1015

3  g 
E
 2 KT 
ni  BT e 2  

3  0.66 
 
( for Ge) n i  1.66 10   300   e
15
2  23001.381023 

ni  2.9  1013

1.38 1023  300

VT   0.026V
1.6 1019

 
 1016 10n 
Vbi  0.026  ln
  2.9 1013 2 
 

Vbi  0.3637v
 
 1.4 
3

 2300 1.38102
 
GaAs ni  2.1 1014   300   e 2  

ni  5.08 1019
VT  0.026 V
 
1016 1017 
Vbi  0.026  ln 
  5.08 1019 2 
 
 0.026  5.573  0.144898 V