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Ao4813 PDF
Ao4813 PDF
SOIC-8
Top View
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G G
S S
Pin1
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
60 40
-10V -7V VDS=-5V
50 -5V
30
40
-4.5V
-ID (A)
-ID(A)
30 20
20 -3.5V
10 125°C 25°C
10
VGS=-3.0V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
35 1.8
Normalized On-Resistance
30 1.6 VGS=-10V
ID=-7.1A
RDS(ON) (mΩ )
25 VGS=-4.5V 1.4
17
5
20 1.2 2
10
VGS=-4.5V
15 1
VGS=-10V ID=-5.6A
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage (Note E)
18
(Note E)
60 1.0E+02
ID=-7.1A
1.0E+01
50
40
1.0E+00
RDS(ON) (mΩ )
40 1.0E-01 125°C
-IS (A)
125°C
1.0E-02
30
1.0E-03 25°C
20 25°C 1.0E-04
10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 1600
VDS=-15V
ID=-7.1A 1400
8
1200 Ciss
Capacitance (pF)
1000
-VGS (Volts)
6
800
4 600
Coss
400
2
200
Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
100 TA=25°C
100.0
-IAR (A) Peak Avalanche Current
TA=100°C
TA=150°C
10 TA=125°C
1.0
1ms
10ms
0.1 TJ(Max)=150°C
10s
TA=25°C
DC
1 0.0
1 10 100 1000 0.01 0.1 1 10 100
µs)
Time in avalanche, tA (µ -VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note Figure 10: Maximum Forward Biased Safe
C)
Operating Area (Note F)
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1 RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Ig
Charge
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds