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Reg. No.
1. [,v -. .-, I " rise in temperature, the cut-in voltage (Ver) of the transistor is
(..\ -rrc:rsed b1' 2.5mV (B) Decreased by 2.5 mV
(C l mV
;i\\ r'L'ased by 0.5 (D) Decreased by 0.5 mV
3. If thc current gain of common base is 0.99 then the current gain of common collector is
(A, +f (B) 100
(C ) .,-rt (D) 99
5. For r \\{OS transistor Ipq and }, are lmA, 0.02 V-t respectively, then the output resistance
(r, i r,'
(Ar ., \tQ (B) s0KO
(Cr t,,KC) (D) 20MO
6'Atto\lEThasIpq-lrnA andkn-L.SwAllr2,thenthetransconductance(gm)isgivenby
(Al : -q mA/V (B) 0.05 mA/V
(Cr i l(rmA./V (D) 3.58mAA/
7. The rc-quired value of Cc to achieve time constant as 1.59 ms in a common source circuit
u'ith R.q * Rp = 16.7KO is
(A) 1.59 pF @) 0.9s2 nF
(C) 1.59 nF (D) 0.es2 pF
16. A power amplifier has fundamental amplitude of I i \'. second harmonic amplitude of lV,
then the harmonic distortion component is
(A) 60% (B) {r.
(C) 30% @) :,,'.
17' e uOSpET based two-transistor current sourcc *, lref =100pA and 1=0.01I,-1, ihen
- the output resistance is
(A) lko (B) I \rQ
(c) loMo (D) roxo
18. A BJT based two-transistor current source ha..' /\=Fz=100, 10 =200pA, then the
reference curent is
(A) 204
pA (B) 20.: mA
(C) 204mA (D) 20.1pA
PART-B(5x4=20}lrrtrt
Answer ANY FfYE Qur-s " n'
21. Show that the slope of DC load line for the giver -' -,' ls (-liRC) and draw its DC Ioad
Iine-
{'
22. Obtanan expression for current gain(Ai) for the follo.. ing CE amplifier using h-n analysis.
&
Cc
i"
Vi
23. Sketch the small-signal equivalent circuit diagram of \\loS by using h-n analysis and write
ttre formula for gn and rs.
26. Find the relationship between the reference and bias currcnts in widlar current source.
27. Draw the circuit diagram for MOSFET current mirror and derive its output resistance.
28. a. Derive an expression for current gain(Ai) and output impedance (Ro) for the following
circuit using h-n model and determine their values for the given transistor parameters:
F
:
100, Vsr = 0.7 V, Va: 80V, Isq :0.793 mA and Vceq: 3.4V.
It"r(5v)
(oR)
b. Show that the overall crment gain(Ai) and input resistance (Ri) tends to large for darlington
pair configuration.
29. a. Derive the characteristics (Av, Ai, Ri, Ro) of the following coflrmon-gate circuit and
determine their values for the given transistor parameters: Vrn : lV, kn : I rrA/V2 and
l": 0.
Cq ccz
rQ
Rp R1
-{*
1ffi4
4ko 1Ofo
00
Y-
-5 torn*
(oR)
b.i. Draw the circuit diagram of RC coupled BiFET (CS +CE) configuration and obtain an
expression for its voltage gain (Av) using h-n small-signal analysis. (8 Mark$
ii. Explain the effects of output coupling capacitor in low frequency response of the following
cofllmon source circuit. (4 Marks)
31. a- With neat circuit diagram, explain the operation of series fed, directly coupled class A
amplifier. Also derive the expression for Pi, Po and 11.
(oR)
b. Explain the operation of push pull class B amplifier and derive the expressions for DC power
input, AC power output, maximum efficiency, power dissipation and maximum power
dissipation.
32.a.i. Draw the small-signal equivalent circuit of the MOSFET active load circuit and derive the
voltage gain of the following MOSFET amplifier with active load and load resistance.
t*
HI
c9 vs
vi
ii. :
Consider the transistor parameters for the above circuit are: ln:Lp:0.01v-1, Vrn lV and
:
kn = lmAA/2. Assume M, and Mz ile matched and Inrr 0.5 mA. Calculate the small-signal
voltage gain for load resistances of Rr - co and 100 kf,)'
(oR)
b. Obtain an expression for common-mode and differential-mode gain for BJT differential
ampliher.
x****
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