Superlattices and Microstructures 111 (2017) 1050e1057

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Superlattices and Microstructures

journal homepage: www.elsevier.com/locate/superlattices

Design and analysis of 30 nm T-gate InAlN/GaN HEMT with

AlGaN back-barrier for high power microwave applications
P. Murugapandiyan a, *, S. Ravimaran b, J. William c, K. Meenakshi Sundaram d
a
Department of Electronics and Communications Engineering, Agnel Institute of Technology and Design, Goa, India
b
Department of Electrical and Computer Science Engineering, M.A.M College of Engineering, Trichy, Tamilnadu, India
c
Department of Electronics and Communication Engineering, M.A.M. College of Engineering and Technology, Trichy, Tamilnadu, India
d
Fellow in Faculty of Graduate Studies and Research, Botho University, Botswana

a r t i c l e i n f o a b s t r a c t

Article history: In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate
Received 25 June 2017 InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using
Received in revised form 1 August 2017 Synopsys Sentaurus TCAD Drift-Diffusion transport model at room temperature. The de-
Accepted 2 August 2017
vice features are heavily doped (nþþ GaN) source/drain regions with Si3N4 passivated
Available online 3 August 2017
device surface for reducing the contact resistances and gate capacitances of the device,
which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-
Keywords:
mode) HEMT exhibited a peak drain current density Idmax of 2.3 (2.42) A/mm, trans-
HEMT
Back-barrier
conductance gm of 1.24(1.65) S/mm, current gain cut-off frequency ft of 262 (246) GHz,
Breakdown voltage power gain cut-off frequency fmax of 246(290) GHz and the three terminal off-state
JFoM breakdown voltage VBR of 40(38) V. The preeminent microwave characteristics with the
Cut-off frequency higher breakdown voltage of the proposed GaN-based HEMT are the expected to be the
most optimistic applicant for future high power millimeter wave applications.
© 2017 Elsevier Ltd. All rights reserved.

1. Introduction

With the recent upsurge of millimeter wave electronics (30e300 GHz) such as, next generation cellular communication,
satellite communication, radar, TV broadcasting, high speed data communication and image sensing require both high fre-
quency, low noise wide bandwidth power amplifier and high power microwave transistors. Even though the InP, GaAs based
HEMTs [30,31] are demonstrated the superior microwave performance in the sub-millimeter range (more than 500 GHz), the
breakdown voltage of the transistor is very low. To reinforce the next generation high power microwave electronics, GaN-
based HEMTs are the optimistic applicant due to its unique combination of high electron velocity and large breakdown
voltage [3,5,6,9,14,17,18,20,28,29]. Several research groups reported the microwave characteristics of GaN-based HEMTs
[1,2,4,11,13,15,19,21e27]. Despite the high current gain cut-off frequency ft of the GaN-based HEMT reported in the literature,
the Johnson figure of merit (JFoM ¼ VBRXft) and maximum frequency oscillation (fmax) of HEMTs are essential key parameters
for high power millimeter wave applications. The high fT is achieved by aggressive scaling of the device dimensions. As the
device length shrinking, the breakdown voltage of the transistor deteriorates. Therefore for simultaneous improvement in
high frequency and high breakdown voltage, proper device design is required.

* Corresponding author.
E-mail address: murugavlsi@gmail.com (P. Murugapandiyan).

http://dx.doi.org/10.1016/j.spmi.2017.08.002
0749-6036/© 2017 Elsevier Ltd. All rights reserved.
 P. Murugapandiyan et al. / Superlattices and Microstructures 111 (2017) 1050e1057 1051

Dong Seup Lee et al. (2011) designed 30 nm gate length InAlN/GaN HEMT with oxygen plasma treatment, and the HEMT
exhibited a ft/fmax of 245/13 GHz [1]. Stefano Tirelli et al. (2011) demonstrated a peak ft/fmax of 205/220 GHz for 30 nm
InAlN/GaN HEMT with fully passivate ddevice surface [2]. Ronghua Wang et al. (2010) reported ft/fmax of 70/105 GHz, VBR of
29 V for 150 nm gate length enhancement mode InAlN/GaN HEMT [11]. Yuanzheng Yue et al. (2012) had shown the record ft
of 370 GHz for 30 nm InAlN/GaN HEMT, however the fmax of the transistor is 28 GHz and severe short channel effects were
found [13]. Chuan-Wei Tsou et al. (2015) demonstrated ft/fmax of 60/101 GHz, 21 V breakdown voltage for 110 nm InAlN/GaN
on Si substrate [15].
From the literature research, for ultra-scaled (sub 50 nm gate length) InAlN/GaN HEMTs are failed to attain high break-
down voltage. However, the important figure of merit of GaN-based transistors is high breakdown voltage.
Sheng Lei Zhao et al. (2016) investigated the breakdown voltage of AlGaN/HEMT with AlGaN back-barrier [7]. The HEMT
with AlGaN back-barrier manifested a high breakdown voltage than conventional HEMT by suppressing the buffer leakage
currents. Hyung-Seok Lee et al. (2012) experimentally verified the breakdown voltage enhancement of InAlN/GaN HEMT by
using AlGaN back-barrier [8].
From the aforementioned research progress, we proposed a novel 30 nm InAlN/GaN HEMT structure with AlGaN back-
barrier for achieving high ft/fmax for improving the breakdown voltage as well as tight carrier confinement with enhanced
mobility in the 2DEG region. InAlN/GaN/AlGaN heterostructure for sub 50 nm HEMTs has not reported so far. The device
features are T-shaped gate for reducing the gate access resistance by providing large gate area with small gate length [30], SiN
passivated device surface for suppressing the gate to source capacitance (Cgs) and gate to drain capacitance (Cgd) [11], and
heavily doped nþþ GaN source/drain region for minimizing the contact resistance [10]. The proposed InAlN/GaN HEMT is
designed for both enhancement mode and depletion mode operation and simulated by Synopsys TCAD tool.

2. InAlN/GaN HEMT with AlGaN back-barrier device structure and band gap diagram

The vertical cross section view of depletion mode and enhancement mode InAlN/GaN HEMT with AlGaN back-barrier on
SiC substrate is depicted in Fig. 1(a) and (b) respectively. The depletion mode HEMT consists of 6 nm lattice matched
In0.17Al0.83N barrier, 1 nm AlN spacer, 20 nm GaN channel and 800 nm Al0.07Ga0.93N back-barrier as the buffer. Whereas the
enhancement mode HEMT has 4.5 nm In0.17Al0.83N barrier, 1 nm AlN spacer, 20 nm GaN channel and 800 nm Al0.07Ga0.93N
back-barrier as the buffer. The recessed (recess depth is 3.5 nm) gate structure is formed by removing the part of the InAlN
barrier layer for enhancement mode operation. The drain to source distance (Lsd) is kept for 585 nm and gate to drain distance
(Lgd) is 165 nm & gate to drain distance (Lgd) is 400 nm. The T-shaped Schottky gate with a small footprint (30 nm length and
100 nm stem height). Ni/Au metal stack used as gate contact for depletion mode HEMT, whereas for enhancement mode
HEMT uses recessed T-gate with the same gate length 30 nm by using Pt/Au metal stack. The width of the gate is 2  25 mm. In
order to reduce the contact resistance, Ti/Al/Ni/Au metal stack used as ohmic contacts, which has the direct contact with Si
doped (>1  1019cm3) 50 nm nþþ GaN source/drain region [21]. Finally, the device surface is passivated by 20 nm Si3N4
passivation layer to mitigate the current collapse and parasitic capacitance.
A 1 nm Al spacer layer associated with Al0.07Ga0.93N back-barrier structure attenuates the short channel effects and
provides the better electron confinement in 2DEG. The Al content in the back-barrier is less than 10%, to avoid excessive stress
in GaN channel and rough surfaces, which will affect the mobility of the 2DEG. The access and output resistance of HEMTs
limits the performance of these devices. Since the contact resistivity is a major part of such parasitic resistances. The heavily
doped n þ GaN source/drain ohmic contacts allowed a significant reduction of the contact resistivity in the proposed device
[10]. The T-gate structure reduces the gate access resistance by providing large gate area while maintaining the smaller gate
length and reduces the extrinsic gate capacitance. The reduction in the gate to drain space can cause the high electric field in
the gate-source region which results in high Cgs and high gds. In this work, gate to source (Lgs) distance is more than the gate to
drain (Lgd) distance to maintain a low electrostatic field in the gate-drain space channel region for achieving high breakdown
voltage. 6 nm wide bad gap InAlN barrier associated with AlN spacer layer effectively mitigates the gate leakage current [16].

Fig. 1. (a) Vertical cross-section of depletion mode InAlN/GaN HEMT with AlGaN back-barrier; (b) Vertical cross-section of enhancement mode InAlN/GaN HEMT
with AlGaN back-barrier.
1052 P. Murugapandiyan et al. / Superlattices and Microstructures 111 (2017) 1050e1057

The Si3N4 passivation layer limits the amount of electrically active traps that cause the dispersion effects. And also the
passivation layer reduced the parasitic capacitive effect particularly between gate and drain (Cgd). SiC is used as a substrate for
the proposed device due to their excellent thermal conductivity.

3. InAlN/GaN HEMT with AlGaN back-barrier device structure and band gap diagram

The energy band diagram of InAlN/AlN/GaN/AlGaN is depicted in Fig. 2(b). The InAlN/GaN hetero-junction benefits the
high 2DEG density (~1013 cm2) without doping and high electron mobility (~2000 cm2/V-s) because of the large conduction
band discontinuity between the InAlN/GaN. The high 2DEG density is achieved by large spontaneous and piezoelectric po-
larization field inside the InAlN layer. The amount of 2DEG density is controlled by the thickness of the barrier layer and the Al
content of InAlN. To confine the induced 2DEG electron density in the channel region and enhance the electron mobility in the
quantum well, AlGaN back-barrier is used in our proposed structure, which also helped to enhance the breakdown voltage of
the device by reducing the buffer leakage current. Rather than making conduction band discontinuity because of band offset,
the enhanced 2DEG confinement is enabled by the negative polarization induced charges in the GaN/AlGaN interface. The
induced charges make significant band bending; this creates a very high barrier. A very thin 1 nm wide band gap (6.01 eV) AlN
spacer presented in between the barrier and channel offering the large effective conduction band offset which also con-
tributes to higher sheet charge with enhanced electron mobility.

4. Drain current characteristics

The drain-source current by considering the short channel effects is as follows;

4.1. Linear region

" #
2
VDS
0 W
IDS ¼ kðVDS Þkn ðVGS  Vt ÞVDSAT  (1)
L 2

where VDS  VGS  Vt

4.2. Saturation region

" #
2
VDS
w 0
IDSAT ¼ kðVDSAT Þkn ðVGS  Vt ÞVDSAT  (2)
L 2

0
where VDS ¼ VDSAT  ðVGS  Vt Þ and kn is the proportionality constant that depends on the material constants and device size
and gives the measure of the mobility. The velocity saturation models as follows:

Fig. 2. (a) Polarization distribution (b) Energy band diagram.

 P. Murugapandiyan et al. / Superlattices and Microstructures 111 (2017) 1050e1057 1053

1
kðVÞ ¼ (3)
1 þ Evc L

where Ec is the critical electric field at which the charge carrier reaches saturated drift velocity and v is the saturation velocity
of charge carriers in the channel.
In this work, the device structure is simulated by using Synopsys Sentaurus TCAD Drift-Diffusion transport model at room
temperature. The drain characteristics of E-mode and D-mode Lg 30 nm InAlN/GaN HEMT with AlGaN back-barrier is shown
in Fig. 3(a) and Fig. 3(b) respectively. The peak drain current density of (Ids) of 2.3 A/mm and 2.42 A/mm is achieved for D-
mode and E-mode HEMT respectively. The high drain current density is obtained due to tight carrier confinement in the
channel region by AlN spacer layer and AlGaN back barrier. The obtained 2DEG density, carrier mobility and sheet resistance
of D-mode HEMT (E-mode) are 2  1013 (2.3  1013) Cm2, 1478 (1583) Cm2/V.s and 228 (239) U/, respectively. The on
resistance (Ron) of the transistor is the primary source for power dissipation when the operation in active the region, the
extracted low Ron for the Depletion mode and Enhancement mode HEMT from the VeI characteristics are 0.52 U mm and
0.49 U mm respectively. The drain current characteristics of proposed HEMT are validated with the experimental data [1].
The transfer characteristics of Lg 30 nm E-mode InAlN/GaN HEMT with AlGaN back-barrier is displayed in Fig. 4. The
extracted threshold voltage of the D-mode and E-mode HEMTs are 1 V and 0.2 V respectively.
The breakdown voltage GaN-based HEMT is the primary advantages for high power applications. However, scaling the
gate length of HEMTs below 100 nm will lead to significant reduction in breakdown voltage due to high leakage currents. The
breakdown characteristics of the proposed HEMTs by constant drain current injection method is displaying in Fig. 5(a) and (b)
for D-mode and E-mode HEMTs respectively. In the proposed InAlN/GaN HEMT structure, the gate leakage current and buffer
leakage currents are majorly reduced with help of wideband gap barrier (InAlN), spacer layer (AlN), and back-barrier (AlGaN).
The off-state breakdown voltage (VDS) of 40 V (D-mode) and 38 V (E-mode) extracted from the breakdown characteristics for
Id ¼ 10 mA/mm. For 30 nm InAlN/GaN HEMT, the obtained VBR is the best result among the literature.

5. Subthreshold and leakage current characteristics

The Gate leakage current of the HEMT is comprises of surface leakage and barrier leakage currents. 1. The electrons
tunnelling from the gate accumulates on the AlGaN surface next to the gate and then conducts along the surface states by a
trap-to-trap hopping mechanism. 2. Poole-Frenkel (PF) emission creates the gate to drain surface leakage current. At the low
electric field hopping conduction is the main mechanism of surface leakage and for high electric field PF emission would be
the main source for surface electron transportation. The electron at the gate side can travel through the AlN barrier layer to
the 2DEG channel, resulting in the barrier leakage current. The barrier leakage current includes thermionic emission (TE),
Fowler-Nordheim (FN) tunnelling, PF emission and other trap assisted emission. The FN tunnelling process is independent of
temperature, but strongly depends on electric field. Because of the large electric field resulting from the high spontaneous
polarization charge, FN tunnelling current becomes one of the dominant leakage current in AlN/GaN HEMTs. PF emission and
other trap assisted emission can be depressed by improving the material quality.
 
B
E
FN tunneling current density JFN ¼ AE2 e (4)
pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi3
8p 2m*n ðqfeff Þ
With ¼ 3qh
. Where E is the electric field in the barrier at the metal-semiconductor interface, A is the constant, m*n is
the conduction band effective mass in semiconductor, h is the Planck's constant and feff is the effective barrier height. In this
work, the Fowler-Nordheim (FN) tunnelling gate leakage current characteristics of the proposed HEMT are simulated by
Synopsys Sentaurus TCAD Drift-Diffusion transport model.

Fig. 3. (a). TCAD Simulation of Drain characteristics of D-mode InAlN/GaN HEMT with AlGaN back-barrier; (b). TCAD simulation of Drain characteristics of E-
mode InAlN/GaN HEMT with AlGaN back-barrier.
1054 P. Murugapandiyan et al. / Superlattices and Microstructures 111 (2017) 1050e1057

Fig. 4. TCAD simulation of transfer characteristics of both E and D-mode InAlN/GaN HEMT with AlGaN back-barrier.

Fig. 5. (a) TCAD simulation of Vds e Vgs breakdown characteristics of D-mode InAlN/GaN HEMT with AlGaN back-barrier; (b) TCAD simulation of Vds e Vgs
breakdown characteristics of E-mode InAlN/GaN HEMT with AlGaN back-barrier.

The short channel effects are the major problem in ultra-scaled devices, particularly in sub 50 nm gate lengths. The in-
clusion of AlGaN back-barrier material in InAlN/GaN HEMT reduces the short channel effects. The subthreshold characteristics
of both D-mode and E-mode Lg 30 nm InAlN/GaN with AlGaN back-barrier are depicted in Fig. 6(a) and Fig. 6(b) respectively.
The extracted drain induced barrier lowering (DIBL) and subthreshold slope (SS) from the log scale plot are 115 mV/V & 84
mV/dec for D-mode HEMT and 70 mV/V & 75 mV/dec for E-mode HEMT. The high channel aspect ratio of E-mode HEMT had
shown better short channel effects suppression in compare with D-mode.
The gate leakage current characteristics of Lg 30 nm InAlN/GaN HEMT with AlGaN back-barrier is shown in Fig. 7(a) (D-
mode) and Fig. 7(b) (E-mode). For high voltage switching applications reverse bias gate leakage current is a series problem
affecting the device performance. The wide band gap (6.01 eV) AlN inter layer not only reducing the alloy scattering, which
also effectively reduces the Fowler-Nordheim (FM) tunnelling current at high reverse gate voltages. At zero gate bias, the gate
leakage current (Ig) for depletion mode HEMT is ~1013 A/mm, whereas the enhancement mode HEMT gate leakage current is
~109A/mm.

6. RF characteristics of InAlN/GaN HEMT with AlGaN back-barrier

The transconductance variation with gate-source bias is displayed in Fig. 8(a) and Fig. 8(b) for D-mode and E-mode
respectively. A peak transconductance (gm) of 1.15 S/mm and 1.65 S/mm is extracted from the plot at Vds ¼ 5 V and Vgs ¼ 1 V.
The current gain cut-off frequency (ft) of HEMTs can be expressed as a sum of intrinsic and parasitic components [12];
" ! #
1 Cgs þ Cgd Cgs gd
t¼ ¼ þ Cgd :ðRs þ Rd Þ: 1 þ 1þ (5)
2pft gm Cgd gm
 P. Murugapandiyan et al. / Superlattices and Microstructures 111 (2017) 1050e1057 1055

Fig. 6. . (a) TCAD simulation of subthreshold characteristics of D-mode InAlN/GaN HEMT with AlGaN back-barrier; (b) TCAD simulation of Subthreshold char-
acteristics of E-mode InAlN/GaN HEMT with AlGaN back-barrier.

Fig. 7. (a) TCAD simulation of Leakage current characteristics of D-mode InAlN/GaN HEMT with AlGaN back-barrier; (b) TCAD simulation of Leakage current
characteristics of E-mode InAlN/GaN HEMT with AlGaN back-barrier.

ft
fmax ¼ qffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
  ffi (6)
2 Rs þ Rg gds þ 2pft Rg Cgd

where Cgs , Cgd , gm , gd Rs , Rg and Rd represents gate-source capacitance, gate to drain capacitance, transconductance, drain
conductance, source resistance, gate resistance and drain resistance respectively. The intrinsic transit time of the HEMT is
Cgs þCgd
gm and theparasitic charging time delay represented by Cgd :ðRs þ Rd Þ and the last term in equation (1) is the delay orig-
inating from output conductance.
The simulation result of current gain cut-off frequency (ft) and power gain cut-off frequency (fmax) of Lg 30 nm InAlN/AlN/
GaN HEMT with AlGaN back-barrier of D-mode and E-mode HEMTs for various gate-source bias are extracted from the TCAD
simulation and depicted in Fig. 9(a) and Fig. 9(b) respectively. The proposed HEMT device exhibited a peak ft/fmax ¼ 262/
234 GHz for D-mode and ft/fmax ¼ 246/290 GHz for E-mode at Vds ¼ 5 V. The Johnson figure of merit (JFoM) of D-mode and E-
mode HEMTs are 10.48 and 9.348 THz respectively.
The higher ft/fmax are achieved by smaller gate length, the drastic reduction in the contacts resistances and the parasitic
capacitances of the device by heavily doped (n þ GaN) source/drain regions have direct contacts with the channel, combined

Fig. 8. (a) TCAD simulation of Transconductance variation with gate-source voltage of D-mode InAlN/GaN HEMT with AlGaN back-barrier; (b) TCAD simulation of
Transconductance variation with gate-source voltage of E-mode InAlN/GaN HEMT with AlGaN back-barrier.
1056 P. Murugapandiyan et al. / Superlattices and Microstructures 111 (2017) 1050e1057

Fig. 9. (a) TCAD simulation of RF characteristics of D-mode InAlN/GaN HEMT with AlGaN back-barrier; (b) TCAD simulation of RF characteristics of E-mode InAlN/
GaN HEMT with AlGaN back-barrier.

Table 1
List of parameters for TCAD simulation.

DECInAlN=GaN 0:8 eV εInAlN 10:1

DEC;AlN=GaN 1:7 eV εAlN 8:57
sInAlN=AlN 3:57X1013 Cm2 εAlN 9:5
sAlN=GaN 6:64X1013 Cm2 4s 2:8 eV
mInAlN 0:25mo AIN c 2.1eV
mAlN 0:32mo InAlN c 2.5eV
mGaN 0:20mo InN c 4.7eV

where.
DEc - Conduction band offset.
s - Polarization induced interface charges.
ε - Static dielectric constant.
4s - Surface potential.
m - Electron effective mass.
c -electron affinity.

Si3N4 passivated device surface. The features of the T-gate structure is reduced gate resistances & capacitances, short channel
effects (SCEs), which improves the transconductance (gm) and attenuated drain conductance. The extracted small signal
parameters are gate-source capacitance Cgs, gate-drain capacitance Cgd, source resistance Rs, drain resistance Rd, Sheet
resistance Rsh and on resistance Ron of the 30 nm T-gate D-mode (E-mode) InAlN/AlN/GaN HEMT device with heavily doped
source and regions are 513(434) fF/mm, 174(173) fF/mm, 0.18(0.165) U.mm, 0.2 (0.21) U.mm and 435(418) U/, respectively.

7. Parameters used for TCAD simulation (at room temperature)

The various parameters used for TCAD simulation for this work is listed in Table 1.

8. Conclusion

In this work, the DC and microwave characteristics of a novel 30 nm T-gate InAlN/AlN/GaN HEMT with AlGaN back-
barrier has been demonstrated by using Synopsys TCAD tool. The device features are heavily doped (nþþ) source/drain
regions with SiN passivated device surface which is helped us to reduce the contact resistances and gate capacitances of the
device which uplift the microwave characteristics of the HEMTs. 30 nm gate length D-mode (E-mode) HEMT exhibited a
peak drain current density Idmax of 2.3 (2.42) A/mm, transconductance gm of 1.15(1.65) S/mm, current gain cut-off fre-
quency ft of 262 (246) GHz and power gain cut-off frequency fmax of 246(290) GHz. The three terminal off-state breakdown
voltages of 40 V for D-mode and 38 V for E-mode HEMT. The excellent microwave characteristics with the higher break-
down voltage of the proposed GaN-based HEMT are the expected to be the most optimistic applicant for future high power
millimeter wave electronics.

Acknowledgement

The authors acknowledge the Nanoelectron Devices and Circuits Laboratory of Electronics and Communication Engi-
neering Department at M.A.M College of Engineering, Trichy-India for providing all facility to carry out this research work.
 P. Murugapandiyan et al. / Superlattices and Microstructures 111 (2017) 1050e1057 1057

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