Chapter 20 Problem Solutions

1.3x1017 1.3x1017
20-1. Nd = BV ! = 2500 = 5x1013 cm-3 ; W(2500 V) = (10-5)(2500) = 250
BD
microns

20-2. Drift region length of 50 microns is much less than the 250 microns found in the previous
problem (20-1) for the same drift region doping density. Hence this must be a punch-
through structure and Eq. (20-9) applies.

(1.6x10-19)(5x1013)(5x10-3)2
BVBD = (2x105)(5x10-3) - = 900 V
(2)(11.7)(8.9x10-14)

2
k!T È I ˘ q!A!ni !Lp
20-3. Von = Vj + Vdrift ; Vj = q ln ÍÎ !I ˙˚ ; For one-sided step junction Is = !N !t ;
s d o
(1.6x10-19)(2)(1010)2! (13)(2x10-6)
Evaluating Is yields = 1.6x10-9 A
!(5x1013)(2x10-6)

Vd = K1 I + K2 (I)2/3 Eq. (20-16) with I = forward bias current through the diode.

Wd 5x10-3
K1 = q!m !A!n = = 1.7x10-4
o b (1.6x10-19)(900)(2)(1017)

3 4 3
Wd (5x10-3)4
K2 = 3 2 =
q2!mo!nb!A2!to (1.6x10-19)2!(900)3!(1017)2!(2)2!(2x10-6)

= 7.5x10-4