1. If=0.98, Ico=6µA and Iβ=100µA for a transistor,then the 12.

IC = [a / (1 - a )] IB + ___________
value of Ic will be A. ICEO* C. ICBO
A. 2.3mA C. 3.2mA B. IC D. (1 - a ) IB
B. 4.6mA D. 5.2mA*
13. In a transistor, signal is transferred from a ___________
2. Introducing a resistor in the emitter of a common amplifier circuit
stabilizes the dc operating point against variations in A. high resistance to low resistance
A. Only the temperature B. low resistance to high resistance*
B. only the β of the transistor C. high resistance to high resistance
C. Both Temperature & β* D. low resistance to low resistance
D. None of the above
14. IC = aIE + ___________
3. The early effect in a bipolar junction transistor is caused by A. IB C. ICEO*
A. Fast turn-on B. ICBO D. ßIB
B. Fast turn-off
C. Large collector-base reverse bias* 15. In a transistor amplifier circuit VCE = VCB + ___________
D. Large emitter-base forward bias A. VBE* C. 2 VBE
B. 5 VBE D. None of the above
4. In a transistor leakage current mainly depends on
A. Doping of base C. Size of emitter 16. The stability factor of a collector feedback bias circuit is
B. Rating of transistor D. Temperature* ___________ that of base resistor bias.
A. The same as C. More than
5. Which of the following amplifier circuit using junction B. Less than* D. None of the above
transistor has the best gain?
A. Common base C. Common emitter* 17. Most of the majority carriers from the emitter
B. Common collector D. All have the same gain ___________
A. recombine in the base
6. When a transistor is connected in common emitter mode, B. recombine in the emitter
it with have C. pass through the base region to the collector*
A. Negligible input resistance and high output resistance D. none of the above
B. High input resistance and low output resistance
C. Medium input resistance and high output resistance* 18. If the value of a is 0.9, then value of ß is ___________
D. Low input resistance as well as output resistance A. 9 C. 0.9
B. 900 D. 90*
7. The encapsulation of transistor is necessary for
A. Preventing radio interference 19. The disadvantage of base resistor method of transistor
B. Preventing photo-emission effects biasing is that it ___________
C. Avoiding loss of free electrons A. Is complicated
D. Mechanical ruggedness* B. Is sensitive to changes in ß*
C. Provides high stability
8. For a NPN bipolar transistor, what is the main stream of D. None of the above
current in the base region?
A. Drift of holes C. Diffusion of holes* 20. In a transistor, the base current is about ___________ of
B. Drift of electrons D. Diffusion of electrons emitter current
A. 25% C. 20%
9. In a bipolar transistor, the emitter base junction has B. 35% D. 5%*
A. Forward bias* C. Reverse bias
B. Zero bias D. Zero or reverse bias 21. A transistor is a ___________ operated device
A. current* C. voltage
10. A transistor has a current gain of 0.99 in the CB mode. Its B. both voltage and current D. none of the above
current gain in the CC mode is
A. 100* C. 99 22. Transistor biasing is done to keep ___________ in the
B. 1.01 D. 0.99 circuit
A. Proper direct current*
11. In a bipolar transistor, the base collector junction has B. Proper alternating current
A. Forward bias C. Reverse bias* C. The base current small
B. Zero bias D. Zero or forward bias D. Collector current small
 A. common emitter C. common collector*
23. A tuned amplifier is used in ___________ applications B. common base D. none of the above
A. Radio frequency* C. Low frequency
B. Audio frequency D. None of the above 35. The output impedance of a transistor connected in
___________ arrangement is the highest
24. The most commonly used transistor arrangement is A. common emitter C. common collector
___________ arrangement B. common base* D. none of the above
A. common emitter* C. common base
B. common collector D. none of the above 36. The power gain in a transistor connected in ___________
arrangement is the highest
25. For faithful amplification by a transistor circuit, the value A. common emitter * C. common collector
of VBE should ___________ for a silicon transistor B. common base D. none of the above
A. Be zero
B. Be 0.01 V 37. The voltage gain in a transistor connected in ___________
C. Not fall below 0.7 V* arrangement is the highest
D. Be between 0 V and 0.1 V A. common emitter * C. common collector
B. common base D. none of the above
26. An ideal value of stability factor is ___________
A. 100 C. 200 38. The leakage current in a silicon transistor is about
B. More than 200 D. 1* ___________ the leakage current in a germanium
transistor
27. The relation between ß and a is ___________ A. One hundredth C. One tenth
A. ß = 1 / (1 – a ) C. ß = (1 – a ) / a B. One thousandth* D. One millionth
B. ß = a / (1 – a ) * D. ß = a / (1 + a )
39. The biasing circuit has a stability factor of 50. If due to
28. The leakage current in CE arrangement is ___________ temperature change, ICBO changes by 1 µA, then IC will
that in CB arrangement change by ___________
A. more than* C. less than A. 100 µA C. 25 µA
B. the same as D. none of the above B. 20 µA D. 50 µA*

29. The arrow in the symbol of a transistor indicates the 40. A silicon transistor is biased with base resistor method. If
direction of ___________ ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA
A. electron current in the emitter and VCC = 6V , what is the value of the base resistor RB?
B. electron current in the collector A. 105 kΩ C. 530 kΩ*
C. hole current in the emitter* B. 315 kΩ D. None of the above
D. donor ion current
41. In a npn transistor, ___________ are the minority carriers
30. If the value of collector current IC increases, then the value A. free electrons C. holes*
of VCE ___________ B. donor ions D. acceptor ions
A. Remains the same C. Decreases*
B. Increases D. None of the above 42. In a pnp transistor, the current carriers are ___________
A. acceptor ions C. donor ions
31. If the temperature increases, the value of VCE B. free electrons D. holes*
A. Remains the same C. Is increased
B. Is decreased* D. None of the above 43. The base of a transistor is ___________ doped
A. heavily C. moderately
32. The phase difference between the input and output B. lightly* D. none of the above
voltages in a common base arrangement is ___________
A. 180° C. 90°
B. 270° D. 0°*

33. The voltage gain of a transistor connected in common

collector arrangement is ___________
A. equal to 1 C. more than 10
B. more than 100 D. less than 1*

34. The input impedance of a transistor connected in

___________ arrangement is the highest