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Topology Overview
Non Isolated Topologies
Isolated DC-DC Derivatives
Single Ended Topologies
Transformer Reset Techniques
Flyback Converter
Forward Converter
Double Ended Topologies
Push Pull
Half Bridge
Full Bridge
Summary
2
Isolated Power Topology Derivatives
VO 1 VO D VO
BOOST = BUCK-BOOST =− BUCK =D
Vi 1 − D Vi 1− D Vi
NON-ISOLATED
ISOLATED
FULL BRIDGE
Non-Isolated Isolated
HARD SWITCHED
1. Boost 4. Flyback
2. Buck-Boost 5. Forward
3. Buck 6. Push-Pull
7. Half Bridge
8. Full Bridge
3
Other Topologies?
4
Multi-Stage Topology
Typical Distributed Power System
AC Line 48 V to 12 V IBC (Intermediate Bus Converter)
85 V < VAC < 265 V
Telecom Rectifier
VPOL_1 < 5 V
AC-DC
AC
EMI
PFC
FL7733A
Difficult to meet: Low cost, high PF, low THD, high efficiency, wide VIN with single-stage
η = 84.9%
6
Non-Isolated Converter Topologies
7
Boost Converter (Step Up)
VIN(t) L VOUT VGS(Q)
VOUT
VL D
CBYP COUT
VDS(Q)
VAC
Q IL BCM
IL
IDS(Q)
VIN(t) L VOUT
VL D ID
COUT tON tOFF
CBYP TS
VAC
Q IL
Boost CCM transfer function:
𝑉𝑉𝑂𝑂𝑂𝑂𝑂𝑂 𝑇𝑇𝑆𝑆 1
= =
𝑉𝑉𝐼𝐼𝐼𝐼(𝑡𝑡) 𝑡𝑡𝑂𝑂𝑂𝑂𝑂𝑂 1 − 𝐷𝐷
IL(PK) IL(PK)
IL(PK)
∆IL ∆IL
IL(MIN)
IL IL ∆IL
0A 0A
0A
VOUT VOUT
2x(VIN – VOUT)
0V 0V 0V
VGS VGS VGS
0V 0V 0V
tON tOFF t tON tOFF tRES t tON tOFF tD t
TS TS TS
9
Buck Converter (Step Down)
L VOUT
VGS(Q)
VIN+VF
VL
Q COUT
CIN VDS(Q)
VIN D VIN
IL
VD
VIN-VOUT VF
VL
-VOUT
L VOUT
VL IL
Q COUT
CIN
VIN D IDS(Q)
ID
tON tOFF
TS
IL
D -VOUT
IDS(Q)
Q COUT
CIN
VIN L VL
ID
tON tOFF
IL TS
12
Benefits of a Transformer
1. Provides primary to secondary safety isolation – subject to regulatory standards
AC DC
AC Output Load
(or DC)
VO VO N
VIN Q1 VO =D NP NS
D2 CO VO = S D
D1 VIN VIN N P
CIN CO VIN CIN
Q1
13
Transformer Characteristics
NP NS CP-S(MUTUAL)
LP(LEAK) LS(LEAK)
VIN VOUT RP RS
NP NS
RCORE LMAG
CP(W) CS(W)
Ideal transformer
Perfect coupling between Np:Ns
Parasitic Transformer Model
No energy storage
NP NS VGS
VIN VOUT
Overshoot/ringing due to
Leakage Inductance
Flyback “transformer”
Really a coupled inductor
VDS
Primary energy stored during tON
Power transferred during tOFF
CCM Flyback (VDS = 32 V, VLK = 12 V)
14
Single Ended Topologies Defined
Single Ended – Transformer operation limited to first quadrant
B ∝ Vt B ∝ Vt
+BSAT +BSAT
B2 B2
∆B ∆B
B1 B1
H ∝ NI H ∝ NI
UNGAPPED
GAPPED
-BSAT -BSAT
D1 L D
Reset NP NS NP NS
Circuit D2 CO CO VO
CIN VIN CIN
Q1 RESET CIRCUIT: Q1
1. Third winding
2. RCD reset
3. Resonant reset
(b) Forward Converter 4. Active clamp reset (b) Flyback Converter
15
Flyback Converter Derivation
D -VOUT D VOUT
n:1
Q COUT COUT
CIN CIN
VIN L VIN LM
(a) (d)
D -VOUT VOUT
1:1 n:1
Q COUT COUT
CIN CIN
VIN L VIN LM
Q D
(b) (e)
D -VOUT
a) Non-isolated buck-boost
1:1
CIN
Q COUT b) Coupled inductor buck-boost
VIN LM c) Isolated buck-boost
d) Isolated flyback converter
e) D can be in return path
(c)
16
Flyback Converter
CCM Operation
VOUT
PWM
NP n:1 NS COUT
CIN 0
VIN LM VIN+(NP/NS)VOUT
Q VDS
D
0
(a) Flyback Converter VOUT
VS
0
CCM Transfer Function
-(NS/NP)VIN
VO N S D
= × IQ1
VIN N P 1 − D 0
Limitations ID1
0
Q1 switching loss (hard switched)
IL
D2 conduction loss 0
Q1(VDS) > VIN
(b) CCM Waveforms
50% duty cycle limit
Right half plane zero in CCM
Output rectifier reverse recovery
17
Quasi-Resonant Flyback
Conventional Valley Switching
T1
t
Output load decreases
vDS
t Operating frequency
increases
iD T2
fS [Hz]
t
PSwitching Loss ∝ COSSV DS2 f S
vDS
t
Output Power [W]
18
Quasi-Resonant Flyback
Window Valley Switching
Tsmax=10.8us
Light Load tW=3.0us
tB=7.8us
Frequency variation depends
on output load conditions
(a)
fs_A=110kHz
Operating frequency is within
narrow variation (127.5 kHz
~ 92.6 kHz)
(b) fs_B=122kHz
vDS (100V/div)
(c) fs_C=127.5kHz
(d) fs_D=92.6kHz
Heavy Load
19
Two-Switch, Quasi-Resonant Flyback
VIN
(FROM PFC) D5 D4
FAN7382 Q1
VHS D3
PBIAS 1 VCC VB 8
C2
2 HIN HO 7 D1 VLED C1
C3
3 LIN VS 6
D2 VA
Q2
4 COM LO 5
R3 R1
R2 CC
FB CV
FAN6300H R4
1 DET HV 8 ACIN
2 FB NC 7
3 CS VDD 6 PBIAS
20
Two-Switch Quasi-Resonant Flyback
Switching Waveforms
VIN+VHS
VGS(HS)
VIN
Quasi-resonant, variable frequency
PBIAS
VGS(LS) HS and LS MOSFETs switch synchronously
0V
IDET(SOURCE)>30µA
Switching period, TS = tOFF + tf + tON
tDELAY=200ns
Inductor current switches from 0 A (ZCS)
0V
VA VA
every switching cycle
5µs
VDS
VO
OVP
ZVS → VOUT > 2×VIN
2.5V
VDET 0.7V
Valley switch → otherwise
0V Window valley switching
IDS
0A
ID
0A
VIN VRO
2 2
VDS VRO
VIN 2
2
0V
tOFF tf tON
TS
21
Two-Switch Quasi-Resonant Flyback
Measured Waveforms
22
Forward Converter Basics
D1 L
PWM
NR NP NS D2 CO VO 0
CIN
VIN VR+VIN
D3 Q1 VIN VDS(Q1)
0
VIN
(a) Forward Converter with Reset Winding
0 VP
N
VR = −VIN × P
NR
IMAG
Really a Transformer Coupled Buck 0
Limitations 0 ID2
23
Problems with Duty Cycle > 50%
Equal Vxt Area
VP VIN Common practice is to use 1:1 bifilar
transformer winding for NP:NR
0
t
− VIN ×
NP D = 40%
NR
IMAG Converter operates in DCM
Transformer is completely reset on every
switching cycle
DTS D2TS D 3T S
t
TS
24
Duty Cycle Greater Than 50%
NP NR NS
VDS vs Vin For NP:NR = 1:2
Third Winding Reset
VDS=3VIN
216
204
192
180 Q1 VDS
168
VDS (V)
156
144 Equal Vxt Area
132 VP VIN
120
108
96
84
72 } NP:NR=1:1 t
36 42 48 54
Vin (V)
60 66 72
D=67%
NP
} NP:NR=1:2
− VIN ×
NR
Np:NR=1:1 Np:NR=1:2
IMAG
DTS D2TS
t
TS 2TS 3TS
Conclusion: Reset winding technique, D > 50% not practical for high VIN applications
due to additional MOSFET VDS stress
25
Active Clamp Forward Converter
D1 L
CCL
Advantages
NP NS
D2 CO
Reduced MOSFET VDS voltage stress
Q2
CIN Higher efficiency through ZVS
Q1
Use of parasitic elements
Higher frequency operation
Suitable for off-line (HS clamp) or DC-DC (LS
PWM
0
clamp)
Q2 VGS
Disadvantages
0 Conditional ZVS only
VIN+VCL
Q1 VDS
Dual primary side gate drive with accurate dead-
0 time control and max duty cycle clamp required
IMAG
Poor transient response due to CCL
ICL
Transfer Function
IQ1
0
VO N
IP
= S ×D
0 V IN N P
VIN
0 VP
VRESET
26
Active Clamp Forward Converter
Two Versions
D1 L D1 L
CCL
NP NS CO NP NS
D2 D2 CO
Q2 CCL
CIN CIN
Q2
Q1 Q1
(a) High-Side Active Clamp (b) Low-Side Active Clamp
(Flyback Clamp) (Boost Clamp)
27
Active Clamp Forward Converter
Zero Voltage Switching (ZVS)
ZVS occurs when the voltage across the MOSFET, VDS, is positioned to “zero
volts” prior to the start of the next switching cycle.
Benefits of ZVS
Reduced switching losses
Higher operating frequency possible (smaller passive component size)
Higher converter efficiency
Increased reliability
Reduced radiated emissions (EMI)
VDS
ID
PSW=VDS x ID x FSW
28
Active Clamp Forward Converter
Zero Voltage Switching (ZVS)
LP(LEAK) LS(LEAK) RS D1 L
RP
NP NS
CCL
CDS RCORE LMAG
D2
CP(W) CS(W) CO
Q2 D2 CD2
CDS
Q1 D1 VDS
29
Single Ended (<500W)
2 Switch Forward Converter
Q2
Advantages
D1 L
Ruggedness
D4 D3
CIN NP NS
D2 CO MOSFET voltage stress limited to VIN
Magnetizing energy recycled by D3,
Q1
D4
Universal input, 150 W < P < 500 W
PWM
0
(Q1, Q2) Disadvantages
VIN Limited to less than 50% duty cycle
VDS
VIN/2 (Q1, Q2) High side gate drive required for Q2
0
VIN/NP Hard switching
0 VS
-VIN/NP Transfer Function
0 IMAG
0 ID3, ID4 VO N
= S ×D
V IN N P
0 IQ1, IQ2
IO IL
ID1
0
ID2
0
30
Single Ended (>1kW)
Interleaved 2 Switch Forward Converter
Advantages Q2
D1 L
transient response Q3
Disadvantages
Qn
Design complexity Dn L
Qn
31
Double Ended Converter Topologies
32
Double Ended Topologies Defined
-BSAT -BSAT
Normal
Flux Imbalance
Saturation
Primary Current
33
Double Ended (<500 W)
Half Bridge Converter (Symmetrical)
Q2
D1 L
Advantages
NP
C1
NS CO Better transformer utilization
CIN VP
MOSFET voltage stress limited to VIN
NS
C2
Q1
Best for high VIN off line applications up to
D2 500W
Single winding primary
PWM, Q1
Transformer balanced by C1 and C2
PWM, Q2 Asymmetric and resonant versions can ZVS
VIN/2
VP Disadvantages
-VIN/2
VIN Totem pole primary gate drive
VDS(Q1, Q3)
VIN High primary current
VDS(Q2, Q4)
Possible cross conduction between Q1 and
IP Q2
Hard switching
ID1 Transfer Function
VO N
ID2 = 2× S × D
IO IL
VIN NP
34
Asymmetrical Half Bridge Converter
Vd
0
Symmetric square waveform + + +
Vd Vp Vp
Vd - - -
0
Asymmetric square waveform 1:1
Same area
+ + +
Vd CB Vp Vp
0
0 - - -
1:1 VCB
35
Asymmetrical Half Bridge Converter
D=0.46 D=0.23 D1 L
Q2
Q2 (D) NP
NS CO
Q1 (D)
CIN VP
VIN/2
VIN/2 NS
VP CB VO N
= 2 × S × D × (1 − D )
Q1
-VIN/2
-VIN/2 D2 V IN NP
IP
Q2 (D)
Fixed dead time between Q1 and Q2
Q1 (1-D)
Dead time optimized for ZVS and anti cross
VIN-VCB
Equal conduction
Area
VIN-VCB
Fixed frequency ZVS PWM operation
VP
VCB VCB Near D=0.5, operation is same as symmetrical HB
IP
BUT, excessive voltage stress is applied to
(b) Asymmetrical HB waveforms secondary rectifier at VIN(MAX)
36
Asymmetrical Half Bridge Converter
Secondary rectifier voltage stress: Asymmetrical Half Bridge
VD vs D, VO=50 V
VD1 = D × VO VD 2 = VO × (1 − D ) 40
35
37
LLC Resonant Half Bridge Converter
Square wave generator: produces a square wave voltage, Vd by driving
switches, Q1 and Q2 with alternating 50% duty cycle for each switch.
Resonant network: consists of Llkp, Llks, Lm and Cr. The current lags the voltage
(inductive) applied to the resonant network which allows the MOSFET’s to be
turned on with zero voltage.
Rectifier network: produces DC voltage by rectifying AC current
Ip
Im
Vgs2
38
LLC Converter Characteristics
1 1
Two resonant frequencies fP = fO =
2π (LM + Lr )Cr 2π Lr Cr
(fo and fp) exist LLC Resonant Converter
The gain is fixed at resonant fp fo
1.8
frequency (fo) regardless of the load Lr / Cr
variation Q=0.2 Q=
1.6 Rac
M @ f = fo = 1 1.4
Q= 1
Q= 0.8
Q= 0.6
Peak gain frequency exists between 1.2 Q= 0.4
fo and fp
Gain
Q= 0.2
39
LLC Topology Variations
Cr VO VO
Lm
VIN - -
VIN Q2 Q2
Ro + Ro +
Q1 Q1
½ Cr
Lr VO VO
- -
Lr Lm
VIN
Q2 VIN
Lm Q2 Voltage doubler rectifier Synchronous rectifier with
Cr with single winding center tab winding
½ Cr
40
LLC Resonant Half Bridge Converter
41
Double Ended (<500W)
Push Pull Converter
D1 L
Advantages
NP NS CO Lower primary current compared to HB
NP NS
Best for lower VIN, such as telecom DC-
CIN DC of US Line Voltage
Q2 Q1
D2
Simple low-side gate drive
Low output current ripple
Disadvantages
PWM, Q1
High voltage (2xVIN) on primary
PWM, Q2
MOSFETs
IQ1
Transformer flux walking (VMC only)
IQ2 Center tapped transformer structure
2VIN
Hard switching
VDS(Q1)
2VIN Transfer Function
VDS(Q2)
VO N
= 2× S × D
ID1 V IN NP
ID2
IO IL
42
Double Ended (>500W)
Full Bridge Converter (PWM)
D1 L
Q1 Q3 Advantages
NS CO MOSFET voltage stress limited to VIN
NP
CIN
Twice the power compared to half
NS
bridge
Q2 Q4
D2 Single winding primary
Gate, Q1 Disadvantages
Gate, Q2 Dual, totem pole primary gate drive
Gate, Q3
Hard switching (Non-ZVT)
Parasitics degrade circuit performance
Gate, Q4
VIN Circuit complexity
-VIN VP
VIN
Transfer Function
VDS(Q1, Q4)
VO N
VIN VDS(Q2, Q3) = 2× S × D
VIN NP
IP
ID1
ID2
IO IL
43
Double Ended (>500W)
Phase Shifted Full Bridge Converter
Q1 Q3
D1 L
Advantages
NS CO High Efficiency ZVS
CIN NP
Highest single stage processing power
NS
Q2 Q4
MOSFET voltage stress limited to VIN
D2 Twice the power compared to half bridge
Gate, Q1 Full wave rectified secondary
Gate, Q2 Single winding primary
Gate, Q3 Excellent choice for EU line voltage (PFC pre-
Gate, Q4
VIN
regulator) with output power >1kW
-VIN
VP
Disadvantages
VIN VDS(Q1, Q4) Dual, high side primary gate drive
VIN VDS(Q2, Q3)
Circuit complexity
IP High circulating primary current for ZVS
ID1 Loss of ZVS at light load current
ID2 Transfer Function
IO IL VO N
= 2× S × D
Freewheel
Freewheel
Power
Power
VIN NP
44
Phase Shifted Full Bridge Converter
ZVS Waveforms
Q1 Q3
Q2 Q4
Q2 (P→A)
VDS, VGS
Q1 Q3
Q2 Q4
Q4 (A→P)
VDS, VGS
What is it? - A full wave alternative rectification technique compatible with all
double ended converter topologies
Derivation of Current Doubler
D1 L D1 D1 D1
NS CO VO NS CO VO V CO VO I CO VO
L
NP NP I V
NS NS V I
D2 D2 D2 D2
(a) (b) (c) (d)
D1
L1 Current Doubler L1
L1 CO VO Q1 CO VO
D1 CO VO
NP NS NP NS
NP NS
D2 Q2
L2
OR L2
L2 (f) (g)
D2
(e)
46
Phase Shifted Full Bridge with Current Doubler
L1 Gate, Q1
Q1 Q3
Gate, Q2
D1 CO
CIN Gate, Q3
D2
Q2 Q4
Gate, Q4
L2 t0 t1
VP
L1
Q1 Q3
IP
D1 CO
CIN
D2
VL1
Q2 Q4 IL1
L2 t1 t2
VL2
Q1 Q3
L1 IL2
IO=IL1+IL2
D1 CO
CIN
D2
t0 t1 t2 t3 t4
Q2 Q4 Current Doubler Timing Diagram (PSFB Application)
L2 t2 t3
2-Switch Forward Single-end 2 VIN < 500 W, universal off-line, PFC pre-
regulator
Push Pull Double-end 2 2xVIN < 500 W, telecom or low VIN (< 200 V)
48
Summary
The innovation trends are in new control methods that are pushing the limits of
power processing, converter size, and operating frequencies.
Better uses of zero-voltage switching and zero-current switching for lower
stresses
Better use of parasitic elements
Digital techniques including non-linear and multi-variant control
Better synchronous rectification timing control
49