SCMOS and Pass Transistor Custom Circuit Design

LEARNING OUTCOMES:

Tasks:
Familiarise yourself with MICROWIND3 tools following the information provided by the lab. Instructor.

1. Construct N-type transistor using MICROWIND3.

Polysilicon gate

N+ Diffusion A S1 W W = Tr Channel Width

G
L = Tr Channel Length
L

 Report the effect of changing the transistor length ‘L’ on transistor’s V/I characteristics
 Report the effect of changing the transistor width ‘W’ on transistor’s V/I characteristics
 What is the relation between transistor’s impedance and its L & W? Discuss the reasons for your
observations.
 Assign repetitive signals for both input ‘A’ and gate ‘G’; let the clock frequency of ‘A’ four times
higher than G. Simulate and discuss the transistor’s operation.
 Use the 2D MW3 tool to investigate the transistor cross section.
 Use the 3D MW3 tool to record the different CMOS process steps
(7 marks)

2. Repeat 2 for P-type transistor . (Note:N-well must be connected to Vdd)

Polysilicon
gate W = Tr Channel Width
P+ Diffusion A S1 L = Tr Channel Length
W
G

L N-Well

(7 marks)

3. Design the layout of a SCMOS inverter represented by the transistor circuit shown below and simulate its
operation. (Include layout and simulation results and comments in your logbook)

Vdd

P-Type
In Out

N-Type

Vss

(6 marks)

4. Design a 2-input NAND gate and simulate its logic operation

(5 marks)
5. Design a 2-input NOR gate and simulate its logic operation
(5 marks)

6. Implement and simulate the following function as a SCMOS single complex gate.
G  A( B  CD)
(10 marks)