ECE1002 Semiconductor Devices and Circuits L T P J C

3 0 2 0 4
Prerequisite: None v.2.1

Objectives:
 To give the students a solid background of solid state devices.
 To apply that knowledge to understand and develop simple electronic circuits.
 To design amplifiers under different configurations and study their parameters
 To study the devices under low frequency for small signals
 To simulate the above using soft tools and compare their output with hard-wired circuitry

Expected Outcome:
1. Demystification of Electronics.
2. Ability to use it as a tool to solve real life problems.
3. Gain full confidence to work with devices in various semiconductor devices and circuits.

Student Learning Outcomes (SLO): 1,6,14

Module:1 Semiconductor Fundamentals: 8 hours SLO:

1
Formation of energy bands, Fermi level, energy- band models, direct and indirect band gap,
electrons and holes, doping, intrinsic and extrinsic semiconductors, elemental and compound
semiconductor, generation, recombination and injection of carriers, Drift and Diffusion of
carriers, basic governing equations in semiconductors , Transport Equations

Module:2 PN Junction diodes: 6 hours SLO:

1
PN Junctions, Formation of Junction, Physical operation of diode, Contact potential and Space
Charge phenomena, I - V Characteristics, Zener diode, Physical operation of special diodes
( Tunnel diode, LED, OLED, Varactor diode and Photo Diode).

Module:3 Diode Circuits: 3 hours SLO:

6
DC Analysis – Small Signals and Large signal models of PN junction diode and AC equivalent
circuit.

Module:4 Diode Applications: 3 hours SLO:

6
Rectifier circuits, Clipper and Clamper circuits, Photodiode and LED circuits.

Module:5 Transistors- Device Perspective: 8 hours SLO:

6
Bipolar Junction Transistor: Device structure and physical operation, current – voltage
characteristics.
Field Effect Transistor (FET): MOS Capacitor: Device Structure and mode of operation, C- V
Characteristics, Threshold Voltage.
Module:6 Transistors- Circuits Perspective: 8 hours SLO:
6
Bipolar Junction Transistor: DC Analysis of BJT Circuits, CB, CE and CC Configuration,
Biasing BJT Circuits, Switch.
Field Effect Transistor (FET): DC Analysis of MOSFET Circuits, biasing circuits.

Module:7 Applications of MOSFETs: 6 hours SLO:

6
CMOS device structure, characteristics, gates and inverters. MOSFET CS, CG and Source
Follower Circuits.

Module:8 Contemporary topics 3 hours

Total Lecture: 45 hours

Text Books:
1. Adel S. Sedra, Kenneth C. Smith & Arun N. Chandorkar, Microelectronic Theory and
Applications, 5/ e, Reprint 2013.
2. B G.Streetman and S.Banerjee, “Solid State Electronic Education, 7th edition Delhi, 2015.
Reference Books:
1. Jacob Millman, Christos C Halkias and Satyabrata Jit, “Electronic devices and circuits” Tata
Mc Graw Hill 4th edition, 2015.
List of Challenging Experiments (Indicative) 30 hours SLO: 14
1. Design a circuit to measure the cut-in and reverse breakdown voltages of a diode.
2. Design a circuit to measure the cut-in and regulation region voltages of a Zener diode.
3. Construct a circuit to convert alternating voltage into unidirectional pulsating voltage using an
uncontrolled single device diode.
4. Construct a circuit to convert alternating voltage into unidirectional voltage using an
uncontrolled two diodes. Also apply the capacitor filter to obtain the smoothened DC voltage.
5. Construct a circuit to perform controlled clipping of positive half-cycle / negative half-
cycle.
6. Construct a circuit to perform controlled level shifting of positive half-cycle / negative
half-cycle.
7. Design a circuit to measure the operating regions of LED and Photodiode.
8. Construct a circuit to measure and plot the input / output characteristics of a transistor for
calculating h-parameters under CB / CE / CE configurations.
9. Design a circuit to measure and plot the DC and AC Load-Line Analysis of a Transistor.
10. Construct a circuit to amplify the low level signal using a Transistor as an Amplifier under CE
configuration.
11. Design a circuit to measure and plot the drain and transfer characteristics of a FET
12. Design a circuit to realize logic Gates using CMOS.

Approved by Academic Council No.:47 Date:05.10.2017