Dr.

Phung Thi Kieu Ha

Electronic Circuits and Applications

Lesson 2. BJT small-signal amplifier
Learning Contents
1. Introduction
2. BJT biasing
3. Small-signal equivalent circuit
4. Analysis of CB, CE, CC circuit
5. DC & AC design
Learning Goals

1. Be able to determine the DC levels of important BJT configurations and determine

whether the network is operating properly
2. Become familiar with the re model for the BJT transistor,
3. Learn to use the re equivalent model to find the important AC parameters for an amplifier.
4. Develop some skills in troubleshooting AC amplifier networks
1. Introduction

1.1. Small-signal amplifier

1.2. BJT amplifier operation
1.3. BJT operating point
1. Introduction
1.1. Small-signal amplifier

• Input signal is relatively weak

• Generated output signal is small fluctuation with respect to
quiescent (Q) point value
• Circuit can be reduced to a linearized equivalent circuit
around its operating point with sufficient accuracy.
• Circuit model ignores simultaneous variations in the gain
and supply values
1. Introduction
1.2. BJT amplifier operation

• DC sources supply the active device BJT

• AC input small signal is amplified >> larger signal at output
1. Introduction
1.2. BJT amplifier operation
1. Introduction
1.2. BJT amplifier operation
1. Introduction
1.2. BJT amplifier operation
1. Introduction
1.2. BJT amplifier operation

• Q near cut-off region: the positive swing of the output

voltage might be cut if input increases
1. Introduction
1.2. BJT amplifier operation
• Q near saturation: the negative swing of the output
voltage might be cut if input increases
1. Introduction
1.2. BJT amplifier operation
1. Introduction
1.3. BJT Operating point
• Operating point = DC current & voltage level of operation
1. Introduction
1.3. BJT Operating point
1. Introduction
1.3. BJT Operating point

• For a BJT operating in active/amplifier region, the collector

current is multiple of base current with the constant
coefficient, called the amplified current parameter (β).

VBE ≈ 0,7V (Si) or VBE ≈ 0,3(Ge) *

IE = I C + I B
IC = βIB or IC ≈ αIE
1. Introduction
1.3. BJT Operating point
For a BJT operating in saturation region the current reach
the maximum value for a particular design.
1. Introduction
1.3. BJT Operating point
For a BJT operating in cutoff region

• Cutoff region defined by IB ≈ 0μA or IE ≈ 0μA

• Equivalent to an open-circuit, Rcutoff of BJT is very very large
• Voltage UCE is nearly maximum value
2. BJT biasing

2.1. Amplifier mode of BJT

2.2. Fix-base configuration
2.3. Voltage-divider configuration
2.4. Voltage-feedback configuration
2. BJT biasing
2.1. Amplifier mode of BJT
For signal amplifying, operating point should be in “active
region” => BE junction in forward-biasing & BC junction in
reversed-biasing

In detail
NPN: VE < VB < VC
or PNP: VE > VB > VC

NOTE
VBE ≈ 0,7V (Si) or VBE ≈ 0,3(Ge) *
IE = IC + IB
IC = βIB or IC ≈ αIE

*if not specified, BJT is made from Si

2. BJT biasing
2.2. Fix-base configuration
2. BJT biasing
2.2. Fix-base configuration
2. BJT biasing
2.2. Fix-base configuration

IB = (Vcc-UBE)/(RB+βRE)
= 34.6μA

IC = β*IB
= 4.84mA

VCE = VCC- IC*RC – IE*RE

= 3.5V
2. BJT biasing
2.3. Voltage-divider configuration
2. BJT biasing
2.3. Voltage-divider configuration
2. BJT biasing
2.4. Voltage-feedback configuration
3. AC equivalent model

3.1. Introduction
3.2. re equivalent circuit of Common-Base
3.3. re equivalent circuit of Common-Emitter
3. AC equivalent model
3.1. Introduction
3. AC equivalent model
3.1. Introduction

• When analyzing the circuit in AC mode:

Consider the capacitors as short-circuit
Consider the DC sources at 0 volt
3. AC equivalent model
3.2. re equivalent model for Common Base
3. AC equivalent model
3.2. re equivalent model for Common Base

• Separation of input and output

• Input: input current ie and re is AC
resistor of a normal diode
re = 26mV/IE
• Output: a controlling current ie,
ic = α*ie
3. AC equivalent model
3.2. re equivalent model for Common Base

• Zi = re (nΩ-50Ω)
• Zo = ro ≈ ∞ (nMΩ)
Zo is the slope of the output characteristic
• Av = α*RL/re ≈ RL/re
Voltage gain rather large and Vo & Vi in phase
• Ai = -α ≈ -1
3. AC equivalent model
3.3. re equivalent model for Common Emitter
3. AC equivalent model
3.3. re equivalent model for Common Emitter
3. AC equivalent model
3.3. re equivalent model for Common Emitter

• Input current ib and an AC resistor

of a normal diode

re = 26mV/IE
• Output: a source of a controlled
collector current

ic = β*ib
3. AC equivalent model
3.3. re equivalent model for Common Emitter

Zi = vbe/ib ≈ βre (n100Ω – nKΩ)

Zo = ro (40-50KΩ)
Av = - RL/re (ro= ∞)
Ai = ic/ib = β
Medium Zi, Zo & rather large Av, Ai
3. AC equivalent model
3.3. re equivalent model for Common Emitter
Common Emitter Common Base

Zi = vbe/ib ≈ βre (n100Ω – nKΩ) Zi = r e (nΩ-50Ω)

Zo = ro (40-50KΩ) Zo = r o (nMΩ)
Zo is the slope of the output characteristic

Av = - RL/re (consider ro= ∞) Av = α*RL/re ≈ RL/re

Vo & Vi in phase

Ai = ic/ib = β Ai = -α ≈ -1

Medium Zi, Zo & rather large Av, Ai

3. AC equivalent model
3.4. re equivalent model for Common Collector

• Use Common Emitter model

4. Use cases of CB/CE/CC circuits

4.1. Common-Base
4.2. Common-Emitter
4.3. Common-Collector
4. Use cases of CB/CE/CC circuits
4.1. Common-Base
4. Use cases of CB/CE/CC circuits
4.1. Common-Base

Zi = Re||re Rather small

Zo = Rc Rather large

Av = αRc/re ≈ Rc/re Rather large, Vi & Vo in phase

Ai = - α ≈ -1 No current gain
4. Use cases of CB/CE/CC circuits
4.1. Common Emitter with Fix-base current bias
4. Use cases of CB/CE/CC circuits
4.2. Common Emitter with Fix-base current bias

Zi = Rb||βre ≈ βre when Rb ≥ 10βre

Zo = Rc||ro ≈ Rc when ro ≥ 10Rc

Av = - (Rc||ro)/re ≈ - Rc/re when ro ≥ 10Rc

Ai = βRbro / [(ro+Rc)(Rb+βre)] ≈ β

• Medium input & output resistance

• Vi & Vo in reversed phase

4. Use cases of CB/CE/CC circuits
4.2. Common Emitter with Fix-base current bias

DC operating point
IE = 4.85mA
VCE = 3.5V
re = 26mV/IE = 5.36Ω

AC parameters
Zin = 390K//βre = 0.75KΩ
Zout = 2.2KΩ
Av = - RC/re = 410

However, the output voltage is limited

at around 3V since the DC VCE is 3.5V
4. Use cases of CB/CE/CC circuits
4.3. Common Emitter with voltage feedback bias
4. Use cases of CB/CE/CC circuits
4.3. Common Emitter with voltage feedback bias

Zi = re/(1/β+Rc/Rf)
Zo = Rc//Rf
Av = -Rc/re
Ai = βRf/(Rf+ βRc) ≈ Rf/Rc when βRc >> Rf

NOTE: - considering ro= ∞

- see Ref book for the case of realistic ro
4. Use cases of CB/CE/CC circuits
4.3. Common Emitter with voltage feedback bias
4. Use cases of CB/CE/CC circuits
4.3. Common Emitter with voltage feedback bias
Zi = RB || [βre+(β+1)RE] ≈ RB || β(re+RE)
Zo = RE||re ≈ re vì RE >> re
Av = RE/(RE+re) ≈1
Ai = - βRB/[RB+ β(re+RE)]

• Very high input impedance but low output impedance

• “Repeat” the input voltage at the output => “emitter repeater
• Impedance matching
5. DC biasing vs AC performance

5.1. Common-Emitter amplifier with/without RE

5.2. Trouble shooting
5.3. Notes on design
5. DC biasing vs AC performance
5.1. Common-Emitter amplifier with/without RE
5. DC biasing vs AC performance
5.1. Common-Emitter amplifier with/without RE
DC operating point and the bias stabilization

• With CE • Without CE
VCC – UBE – IBRB = 0 VCC – UBE – IBRB – IERE = 0

IB = (VCC-UBE)/RB IB = (VCC-UBE)/(RB +βRE)

IC = β*IB IC = β*IB

UCE = VCC - ICRC UCE = VCC - ICRC - IERE

• Less dependent on variation of β

5. DC biasing vs AC performance
5.1. Common-Emitter amplifier with/without RE

AC parameters

• With CE • Without CE
Zi = RB//βre Zi = RB//β(re+RE)
Zo = RC Zo = RC

Av = -RC/re Av = -RC/(re+RE)
5. DC biasing vs AC performance
5.1. Common-Emitter amplifier with/without RE

β*RE ≥ 10R2 -> IR2 ≈ IR1

VB = R2*VCC/(R1+R2)
VE = VB – UBE
IC ≈ IE while IE = VE/RE
UCE = VCC – IC(RC+RE)

Current & Voltage independent

with β

Bypassed RE by capacitor CE to
maximize the voltage gain
5. DC biasing vs AC performance
5.1. Common-Emitter amplifier with/without RE

• How to choose an appropriate RE?

• Tradeoff of RE :

temperature stabilization by large RE

not too large as it will limit the range of the AC swings: to

maximize AC output signal, RB/RE as small as possible

• Recommend: VRE ~ 1/10 – ¼ DC source

5. DC biasing vs AC performance
5.2. Trouble Shooting
• A “right” BJT amplifier should work as follows
5. DC biasing vs AC performance
5.2. Trouble shooting
• Case 1: The output voltage is lower than the expectation
5. DC biasing vs AC performance
5.2. Trouble shooting
• Measure the voltage at Emitter lead, it is greater
than zero

A rather large voltage

at Emitter lead
5. DC biasing vs AC performance
5.2. Trouble shooting
• Case 2: The output voltage is only half-cycle

56
5. DC biasing vs AC performance
5.3. Notes on design process of an amplifier

• Consider the DC operating point in relationship with

Saturation level – Max rating of IC

Cutoff level – Max rating of VCE

• Concern of the limiting power of BJT devices

• Concern of DC stability, and íts affects on AC gain, impedance

57
Quiz 1.

OX Example Select
Quiz Number 1 Quiz Type

Question If emitter current is 2mA than internal emitter resistance will equals to

A. 12.5 Ω
B. 12.5k Ω
Example
C. 125 Ω
D. 0.25 Ω

Answer A

Feedback
Quiz 2.
OX Example Select
Quiz Number 2 Quiz Type

Question Common collector amplifier has phase shift of

A. 900
B. 1800
Example C. 2700
D. No phase shift

Answer D

Feedback
Quiz 3.

OX Example Select
Quiz Number 3 Quiz Type

Question Common collector amplifier has the major role as

A. Current amplifier
B. Voltage amplifier
Example
C. Impedance matching
D. Buffer circuit
Answer C, D

Feedback
Summary
1. It is the capacitive elements of a network that determine the bandwidth of a system. The
larger capacitive elements of the basic design determine the low-cutoff frequency, whereas
the smaller parasitic capacitors determine the high-cutoff frequencies.

2. The frequencies at which the gain drops to 70.7% of the mid-band value are called the cutoff
or half-power frequencies.

3. For any inverting amplifier, the input capacitance will be increased by a Miller effect
capacitance determined by the gain of the amplifier and the interelectrode (parasitic)
capacitance between the input and output terminals of the active device.

4. The high- and low-cutoff frequencies of an amplifier can be approximately determined by

the response of the system to a square-wave input. The general appearance will immediately
reveal whether the low- or high-frequency response of the system is too limited for the applied
frequency.
Next lesson guide…

Lesson 3: FET signal-small amplifier

Reference

Electronics devices and Circuits theory – Robert Boylestad, Louis Nashelsky,

Prentice Hall, 11th edition

Electronic principles – Albert Paul Malvino