Journal of Crystal Growth 207 (1999) 43}54

Growth morphology of primary silicon in cast Al}Si alloys

and the mechanism of concentric growth
Ru-yao Wang!,*, Wei-hua Lu!, L.M. Hogan"
!Department of Materials Engineering, China Textile University, Shanghai 200051, People's Republic of China
"Department of Mining and Metallurgical Engineering, University of Queensland, Qld 4072, Australia
Received 6 January 1999; accepted 21 June 1999
Communicated by D.T.J. Hurle

Abstract

Faceted growth of primary silicon crystals in cast hypereutectic aluminium}silicon alloys is studied by measurement of
spacings between successive growth traces observed in microsections. A general equation, derived to specify conditions
for stable growth of silicon crystal, is supported by spacing measurements. Some examples of departures from stable
silicon growth are studied. Three stages in the development of faceted crystal growth are recognized, changing from
spheroidal to faceted to unstable with increasing crystal diameter. ( 1999 Elsevier Science B.V. All rights reserved.

Keywords: Al}Si alloy; Faceted growth traces; Mechanism of silicon growth

1. Introduction The growth sequences of individual faceted crys-

In cast aluminium}silicon alloys the primary sili-
con crystals are precipitated as individual faceted
crystals, mostly roughly equi-axed. When observed
in polished sections, they appear in a multiplicity of
shapes, suggesting the possible existence of a num-
ber of di!erent growth mechanisms. In an earlier
paper [1] it was concluded that most of the
primary crystals observed exhibited the basic char-
acteristics of octahedral growth, giving faceted
crystals faced only by M1 1 1N planes, classi"ed
as octahedral, spinel and star-like shapes. Later ob-
servations have suggested that other morphologies
occur and a quantitative survey of cross-sectional
shapes was attempted, as described below.
* Corresponding author.
tals can be studied by observation of concentric
growth traces, such as those of Fig. 1, which can be
revealed by appropriate etching techniques [2,3].
During solidi"cation the convection #ows, which
can occur with cyclic regularity, will produce tem-
perature #uctuation and impurity layer depositing
on the surface of a crystal at intervals to disturb the
growth process repeatedly [4}6]. Hence, the traces
reveal the shape of a given crystal at successive
stages in its growth from the melt, showing the
intersection of the facets with the plane of section.
In previous papers [1,7,8] only the octahedral
growth mode was studied. An equation was de-
veloped to de"ne the limits of variation of the
growth velocity <S1 1 1T (normal to the M1 1 1N
facet plane) beyond which the crystal departs from
octahedral growth. The equation refers to growth
trace spacings measured in octahedral-type crystals

0022-0248/99/$ - see front matter ( 1999 Elsevier Science B.V. All rights reserved.
PII: S 0 0 2 2 - 0 2 4 8 ( 9 9 ) 0 0 3 4 7 - 4
44 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54

Fig. 1. (a) Microstructure of an octahedral crystal of silicon exhibiting a hexagonal outline in the plane of section. Etching has revealed
concentric growth traces all parallel to the "nal perimeter. A neighbouring crystal is trapezoidal in the plane of section. (b) Schematic
representation of (a). The numbers indicate positions of measurement of the growth trace spacings. (c) Indicates the relationship of the
cross-section shown in (a) to the octahedron. Since the intersections with the alternate ridges are not symmetrical the ridge angles
alternate either side of 1203, as shown in (b).

of primary silicon which happen to lie with the
plane of section coinciding with M1 1 0N and inter-
secting opposite corners of the octahedron.
This was a very restrictive condition. In any
polished section of a casting most primary crystals
will be cut at random angles and the angles be-
tween growth traces will be correspondingly ran-
dom. If the spacing between such growth traces is
to be used to derive the three-dimensional shapes,
a more general analysis is required. In addition,
scanning electron microscope observations of deep-
etched samples can give useful information on
three-dimensional shapes. Hence in the work de-
scribed below the aims were:
(a) to survey the apparent growth morphologies of
primary silicon crystals in polished microsec-
tions.
(b) to develop a general equation relating mea-
sured spacings between growth traces in ran-
dom sections to departures from faceted
growth in primary silicon crystals.
2. Experimental procedure
Metallographic samples were taken from phos-
phorus-inoculated Al}Si alloys containing 12%
and 17% silicon, respectively. 50 kg melts were
 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54
poured into Y-shaped metal moulds, preheated to
200}2503C, to form slabs of thickness 22 mm.
Freezing rates were in the range 50}1003 per min.
The primary silicon crystals were small and numer-
ous, mostly equi-axed without obvious accelerated
growth of corners. Relative spacings between suc-
cessive growth traces were measured on images
projected onto the screen of an optical photomicro-
scope. The "nal exterior form of some crystals was
observed under the scanning electron microscope
after deep etching to remove the matrix aluminium.
3. Observation and analysis
The frequency of appearance of di!erent mor-
phologies of primary silicon in castings is di$cult
to specify. However, Atasoy et al. [9] observed
primary silicon morphologies in directionally
grown hypereutectic alloys and found that oc-
tahedral crystals, twinned and twin-free, predomi-
nated over a wide range of growth velocities. Plate-
like crystals tended to form at low velocities.
In order to obtain a more quantitative estimate,
the shapes of primary silicon crystals as revealed in
the polished cross-sections were recorded for about
170 particles and are listed in Table 1. The silicon
crystals were generally small ((40 lm) and com-
pact.
The trapezoidal, hexagonal and twinned shapes
should be cross-sections of octahedral or spinel
crystals, which therefore comprised 60% of the
sample. The proportion of twinned crystals is likely
to be understated, since trapezoidal shapes would
not intersect the twin plane of a spinel crystal. The
polyhedra were sections through faceted crystals
which were distored from octahedral shape or else
clusters of several crystals [1,8].
Fig. 1 shows the microstructure of a perfect oc-
tahedral crystal which has grown by symmetrical
Table 1
Percent frequency of morphologies of primary silicon crystals in Al}Si alloys
Trapezoid Hexagon Triangle
40 10 5 10
45
concentric layered growth. The plane of section has
cut the octahedron at a random angle, as in Fig. 1c,
giving a hexagonal perimeter. The seed crystal in
the centre has growth with a roundish outline, but
growth thereafter has produced a series of hexag-
onal impurity traces, the segments of which are
parallel to the external facets "nally formed. All the
hexagons have similar form, with opposite sides
parallel to each other, while the included angles
range either side of 1203 (Fig. 1b). Each segment of
the successive parallel growth traces lies in a M1 1 1N
facet of the growing crystal. The traces intersect six
ridges of the octahedron. The pattern of identical
hexagons in Fig. 1 indicates that there is no persist-
ent accelerated or decelerated growth at the ridges,
but there can be small deviations from the octahed-
ral form which are quickly reversed so that there is
no signi"cant departure from the perfect octahedral
growth mode, as shown at point 7 in Fig. 1. Thus,
the external shape was at all times symmetrical, or
perfect, with facets of equal area. If these deviations
were not reversed they could lead "nally to unsta-
ble growth with the formation of hollow `hoppera
crystals or to the appearance of facets other than
M1 1 1N. These types of unstable growth were
studied in a previous paper [7].
Fig. 2 shows a silicon crystal with a trapezoidal
shape in section. This shape occurs when the micro-
section cuts one cone of an octahedral or spinel
crystal at a random angle, as indicated in Fig. 2c.
Fig. 3 shows a crystal which appears at "rst sight
to exhibit near-perfect octahedral growth, but is an
example of unstable growth in the initial period of
growth. The "rst two growth traces are parallel to
M1 1 1N facets, but take the form of a pentagon, so
that the three-dimensional shape at this early stage
could not be octahedral. This was corrected by
truncation of the ridge at point 37 by formation of
a sixth M1 1 1N trace. In subsequent growth blunted
ridge angles at points such as 26 and 35 (Fig. 3b)
Twinned crystal Plate-like Polyhedron
22 13
46 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54

Fig. 2. (a) Microstructure of an octahedral crystal of silicon exhibiting a trapezoidal outline in the plane of section, with concentric
growth traces. (b) Schematic representation of (a). Numbers refer to points at which spacing measurements were made. (c) Correlation
of cross-section in (a) with the octahedron. Only one cone of the octahedron is intersected, giving four ridge angles alternating about 903.

indicate retarded corner (or ridge) growth which, if
it continued, could lead to facets other than M1 1 1N.
However, the factors favouring faceted growth are
strong enough to quickly reverse these trends. At
point 23 accelerated corner growth commenced,
but primary crystal growth ceased before this could
develop.
In Table 1 about 20% of the sample were plate-
like crystals, which often occur in phosphorus in-
oculated aluminium alloys containing less than
13% silicon or in castings made by the squeeze
casting. In Refs. [2,10,11] plate-like crystals have
been described as hexagonal platelets with #at faces
parallel to an internal M1 1 1N twin plane. The plate
edges are formed by three 1413 grooves alternating
with three 2193 ridges. However, many sections
through platelets appeared as in Fig. 4, with
a strictly rectangular shape which is repeated in
each successive growth trace. This con"guration
can only occur if the external facets are M0 0 1N or
M1 1 0N. M0 0 1N is much more probable, which we
will discuss below (see Table 2).
Only 5% of the sample (see Table 1) were
triangular in shape, which is the cross-section of
 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54 47

Fig. 3. (a) Section through a silicon crystal exhibiting stable octahedral growth after early formation of an unstable pentagonal shape.
(b) Schematic representation of (a). The numbers refer to spacing measurements in Table 3.

triangular plate-like crystal, described by Wagner

[11].
Summarizing the quantitative estimate, the ma-
jority of particles counted in Table 1 were cross-
sections of octahedral or spinel crystals, of which
the growth features will be primarily discussed in
more detail below.

4. Discussion

Observation of many primary silicon crystal dur-

ing the present work and in preparation of earlier
papers [1,7,8] has led the suggestion that the
growth of faceted crystals occurs in three stages, as
Fig. 4. Optical micrograph of a rectangular silicon crystal show- suggested in Fig. 5. The external shapes of the
ing concentric growth parallel to M0 0 1N external facets. Seed
crystal evident in the centre was rounded. crystal as growth progresses can be studied from
successive growth traces, which suggest an initial
stage of nonfaceted growth with a roundish ex-
ternal shape. In stage 2, between about 15 and
50 lm, a faceted morphology usually prevails, with
Table 2
Jackson numbers for silicon
M1 1 1N facets imposing an octahedral shape of
greater or less perfection. In stage 3, as diameter
Plane N /N Alpha Growth mode increases above about 50 lm, the destabilizing
S V
tendencies represented by departures from the
M1 1 1N 3/4 2.67 Faceted growth octahedral shape start to outweigh the faceting
M1 0 0N 2/4 1.78 Nonfaceted growth
tendency, leading to the hollow hopper crystals and
M1 1 0N 1/4 0.89 Nonfaceted growth
dendritic outgrowths. The crystal diameters at
48 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54
Fig. 5. The three stages of growth of primary silicon.
which the transitions occur are likely to vary with
di!erent freezing conditions, but a similar sequence
is to be expected.
4.1. Stage 1
In most of the microstructures observed the "rst
growth trace showed a rounded outline, as in Figs.
1}4, indicating a nonfaceted growth. It appears that
initial growth of the seed crystal is di!usion con-
trolled, so that radial growth rates of an isolated
crystal #oating in the melt are essentially isotropic.
It might be expected that the solute gradients in the
small volume of melt surrounding the tiny embryo
would be radially symmetrical, favouring a
rounded outline. However, the general absence of
faceting in crystals below 15 lm diameter could
also be attributed, at least in part, to the undercool-
ing necessary for nucleation, which would reduce
the faceting tendency.
Crystal faceting has been related by Jackson
[12], to the entropy of melting (Rs/¹ ). He found
E
that faceted growth is favoured when a quantity
a"(Rs/¹ )(N /N ) exceeds 2 cal/3C. N and N
E S V S V
Fig. 6. The variation with driving force of the transition from
faceted to continuous growth. The shaded area includes the
Jackson a values for the principal crystallographic planes of
silicon (Table 2). (From Ref. [13]).
are the number of close neighbours on the sur-
face and within the body of a crystal. N /N
S V
varies with di!erent crystallographic planes, as
shown in Table 2 for silicon. The value of 2.67 for
silicon correctly predicts that silicon should grow in
faceted form with M1 1 1N strongly favoured as the
facet planes, but this is strictly applicable only at
the melting point, 14203C. The choice of facet plane
is widened as the driving force for crystallization
increases. The driving force, of which the main
component is undercooling, can be expressed as
dG/k¹, where dG is the free energy change on
solidi"cation at temperature ¹ and k is the Bol-
tzmann constant. An analysis by Sun et al. [13]
predicts a transition from faceted to nonfaceted
growth at a value of dG/k¹ which varies with a.
The transition value changes rapidly over the range
of a between 1 and 3, shown shaded in Fig. 6. For
the principal planes in silicon a varies between 0.89
and 2.67 (Table 2), hence the growth mode of silicon
 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54
could easily change as undercooling changes. The
crystal grows in faceted mode in area A, changing
to a nonfaceted continuous mode in area B. Thus
M1 1 0N, facets are not predicted, but M1 0 0N facets
to form a rectangular shape, as in Fig. 4, may occur
at undercoolings related to moderate cooling rates.
At high cooling rates the silicon crystal can grow in
nonfaceted continuous mode to form a rounded
shape, as seen in the central seed crystals in Figs.
1}4. There is evidence to suggest [14] that all or
most of the primary silicon crystals nucleate on or
near the mould walls, and are carried into the body
of the melt by convection or turbulence. Thus, stage
1 growth could occur in strongly undercooled melt
near the chill surfaces, corresponding to area B in
Fig. 6, while stage 2 growth in the body of the melt
takes place with decreased undercooling and re-
mains in area A.
4.2. Stage 2
In the range 15}50 lm most crystals were strong-
ly faceted and the M1 1 1N facets imposed a octahed-
ral shape, frequently modi"ed by the presence of
twins. In stage 1 many di!erent crystal planes are
exposed to the melt, but as the crystal grows, and as
undercooling decreases, the higher index planes
grow most rapidly and grow out, leaving the slow-
growing low index planes to form facets. Most
facets would be M1 1 1N. Elimination of the high
index planes tends to be complete as the crystal
diameter increases past about 15 lm. Perfect oc-
tahedral growth requires that growth velocity
< normal to each M1 1 1N facet must be equal
W1 1 1X
for all facets and crystal of Fig. 1 approaches this
condition. The departure of the ridge angles from
1203 is because the plane of section intersected the
octahedron at a random angle, as in Fig. 1c. This
pattern is accurately reproduced with each success-
ive growth trace, so that the growth process can be
described as `stablea. Perfect growth is exceptional.
During the growth of most crystals the growth
velocity in di!erent crystallographic directions cha-
nges with time, but not leading to changes in the
growing pro"le [1,7,8]. This mode of growth is
referred to as `sub-stablea. The term `stablea
when used in present work includes `sub-stablea
growth.
49
Stable faceted growth tends to break down when
the growth velocity of corners or edges of the crys-
tal accelerates or decelerates relative to the growth
velocity < normal to a facet. In stage 2 these
W1 1 1X
tendencies are usually quickly corrected, so that
the faceted shape is recovered. Growth can then be
referred to as `sub-stablea. If the acceleration or
deceleration exceeds de"nable limits hopper crys-
tals or dendritic growth can follow, as described in
Ref. [7], or facets other than M1 1 1N can form. The
limits of stable octahedral growth depend on the
ratio of growth rates of two neighbouring facets
and the angle included between them. In Ref. [7] an
equation was derived relating these quantities to
predict the conditions for breakdown. The accu-
racy of the equation was con"rmed by measuring
the spacings between successive growth traces on
microsections through crystals for which the plane
of section happened to coincide with M1 1 0N and
intersected opposite corners of the octahedron.
However, most primary crystals in a microsection
are cut at random angles and a more general test
equation has been developed, as follows:
<@ /<@ 1 1 1 "1/sin aM1#2(<@ 1 1 /<@ 1 1 1 ) cos a
*E+ *1 1 1+ *1 1 1+ *1 1 1+
#(<@ 1 1 /<@ 1 1 1 )2N1@2, (1)
*1 1 1+ *1 1 1+
where a is the angle between segments of the etched
growth traces in the polished section of any silicon
primary crystal (Fig. 7) and <@ , <@ 1 1 or
*E+ *1 1 1+
<@ 1 1 1 is the projection in the section plane of the
*1 1 1+
velocity vector < , < 1 1 or < 1 1 1 , respectively
*E+ *1 1 1+ *1 1 1+
(see Appendix B).
The equation is derived in Appendices A and B.
Fig. 8 shows a plot of Eq. (1) for edge angles
a between 110 and 1153. Velocity ratio can be
determined by measurements of relative spacings
between successive growth traces in adjacent seg-
ments. Ratios falling on the curve indicate stable
growth. Ratios falling in areas A or B indicate
accelerated or decelerated growth of the edge or
corner, indicating a tendency to hopper growth or
truncation of the corner. Extensive measurements
by the authors have con"rmed the accuracy of such
predictions. The validity of Eq. (1) to predict the
stability of polyhedral growth other than octahed-
ron, such as triangular or rectangular shapes, has
been evidenced by measuring the spacings between
50 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54
Fig. 7. Two successive growth traces at a ridge (or corner) of
a random section through a silicon crystal, e.g. GHIJ in Fig. 9 of
Appendix B.
Fig. 8. A plot of Eq. (1) for ridge angle, a, between 1103 and 1153.
The curves for 1103, 1123 and 1153 are not signi"cantly di!erent
and were therefore plotted as a single curve. Points falling in
regions A and B indicated, respectively, a tendency towards
accelerated or decelerated ridge or corner growth. The measure-
ment points marked n, L or # represent three primary crys-
tals of silicon, respectively. Points 6, 23, 26 and 35 are with Figs.
1c or 3c, respectively. Points 56 and 61 were measured on an
unpublished hexagonal shape of primary silicon.
successive growth traces on microsection intersec-
ted the polyhedra at a random angle.
4.3. Stage 3
The maintenance of a stable edge (or corner)
angle during growth of a silicon particle requires
two conditions. The "rst is moderate undercooling,
su$cient to permit faceted growth. The second is
a delicate balance in supersaturation of the melt
adjacent to the surface of the growing crystal. <@ is
*E+
necessarily greater than <@ 1 1 and < 1 1 1 (see
*1 1 1+ *1 1 1+
Fig. 7) in order to ful"ll the criterion described in
Eq. (1). It follows that the driving force for growth,
or melt supersaturation, is higher in the melt
adjacent to corners and edges than at the centres
of crystal faces. This is a natural consequence
of the di!usion "eld, since aluminium rejected
from a growing facet reduces supersaturation with
respect to silicon and therefore reduces growth
velocity. Adjacent to the corners and edges the
aluminium di!uses into a larger body of melt, per-
mitting the melt to remain richer in silicon. It is to
be expected that the balance could easily be upset
by current #owing across a crystal surface, leading
to outgrowth or truncation of corners or edges [7].
It appears that the tendency to instability increases
with increasing crystal size. Chernov proposes [15]
that there is a critical size beyond which distortion
of the polygonal shape rapidly increases. A faceted
crystal can only exist as a stationary form below
this critical size, which itself increases with decreas-
ing supersaturation. Wilcox [16] predicted theoret-
ically and observed experimentally that instability
became more frequent with increasing crystal size,
as well as with increasing growth rate. In the work
by Fredriksson [2] the unstable growth leading to
hollow crystals or dendritic outgrowths was most
likely to occur in large silicon crystals. In the pres-
ent work the tendency to instability when crystal
diameters exceeded 50 lm was clear, but the critical
size would be expected to vary for di!erent freezing
conditions.
Two factors would contribute to the destabilising
in#uence of increasing crystal size. Firstly, the con-
centration di!erence across faces would lead to
a di!usion current of silicon from corners to face
centres. With increasing size the di!usion distance
increases, thus decreasing the drain of silicon from
the corners and edges. As a result any tendency for
excessive silicon enrichment will be exaggerated.
Secondly, any tendency for accelerated corner
growth will occur by a build-up of extra atom
layers at the corners. The extra layers provide
ledges at which arriving silicon atoms can be
 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54 51

anchored, leading to backgrowth of the layers to- parameters that can be measured on any random
wards the facet centres [7]. This tends to sweep microsection through a crystal. If the crystal is
aluminium atoms and impurities towards the face octahedral the growth traces in a section not paral-
centres, lowering the growth rate there and increas- lel to M1 1 0N will be either hexagonal, as in Fig. 1c,
ing the inhomogeneity of supersaturation. The ra- or trapezoidal, as in Fig. 2c. In sections parallel to
tio <@ /< 1 1 1 increases, moving a plotted point in M1 1 0N the traces may be quadrilateral [1].
*E+ *1 1 1+
Fig. 8 into the region A. Fig. 7 represents two successive growth traces in
These factors do not account for decelerated one corner of a hexagonal or trapezoidal polished
corner growth, which causes truncation of corners, section of a silicon crystal. The ridge angle is a, e.g.
to which has been attributed the appearance of 1153 or 1303 in Figs. 1b or 3b, 80 or 1003 in Fig. 2b.
facets other than M1 1 1N [7]. Truncation would <@ 1 1 and <@ 1 1 1 are the projections in the sec-
*1 1 1+ *1 1 1+
occur when the supersaturation of the melt adjac- tion plane of the velocity vectors < 1 1 and
*1 1 1+
ent to a corner falls below a critical value. The most < 1 1 1 . The latter are crystal growth velocities in
*1 1 1+
probable reason for this reduction in silicon con- the directions normal to (11 1 11 ) and (11 11 11 ). <@ and
1
tent is #ow of liquid across the solid}liquid inter- <@ are directions common to those planes
2
face due to turbulence, or to movement of the and the section plane. <@ is the projection in
*E+
crystal through the melt. the section plane of the velocity vector < . <
*E+ *E+
lies normal to the ridge or edge line in a M1 0 0N
plane and expresses the growth velocity of the
5. Conclusions ridge (see Appendix B). <@ must have a critical
*E+
value if the M1 1 1N facets are to remain planar,
1. A survey is reported of the shapes of primary which is a necessary condition for stable octahedral
silicon crystal as revealed in polished cross-sec- growth.
tions of hypereutectic Al}Si alloy cast ingots. Applying the cosine rule in Fig. 7 to solve for
Microsections of several crystals showing mor- <@ :
*E+
phological features of special interest were
studied. The growth sequences could be recon- <@ "<@ 1 1 /sin[1803!a]"<@ 1 1 /sin a (i)
1 *1 1 1+ *1 1 1+
structed by observation of successive changes in
the growth traces. <@ "<@ 1 1 1 /sin[1803!a]"<@ 1 1 1 sin a (ii)
2 *1 1 1+ *1 1 1+
2. A general equation is derived which predicts the
conditions for stable faceted growth of the sili- <@ "M<{2#<{2!2<@ ) <@ cos(1803!a)N1@2. (iii)
*E+ 1 2 1 2
con. The validity of the equation is supported by
detailed measurements of the spacings between Substituting Eqs. (i) and (ii) in Eq. (iii)
successive growth traces in microsections of cast
<@ "M(<@ 1 1 /sin a)2#(<@ 1 1 1 /sin a)2
hypereutectic aluminium}silicon alloy. *E+ *1 1 1+ *1 1 1+
3. For the microstructures studied it was observed
!2(<@ 1 1 /sin a)(<@ 1 1 1 /sin a)
that initial growth tended to be spheroidal. *1 1 1+ *1 1 1+
Stable faceted growth was established at a dia-
]cos(1803!a)N1@2
meter of about 15 lm. Above about 50 lm there
was an increasing instability, with deviations "1/sin aM<{21 1 #<{21 1 1
from stable faceted growth leading to hollow *1 1 1+ *1 1 1+
crystals or dendritic outgrowths. #2<@ 1 1 <@ 1 1 1 cos aN1@2
*1 1 1+ *1 1 1+
or
Appendix A
<@ /<@ 1 1 1 "1/sin a M1#2(<@ 1 1 /<@ 1 1 1 ) cos a
*E+ *1 1 1+ *1 1 1+ *1 1 1+
We wish to develop an expression to predict the
conditions for stable faceted growth, in terms of #(<@ 1 1 /<@ 1 1 1 )2N1@2. (A.1)
*1 1 1+ *1 1 1+
52 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54

Table 3
Growth rate spacings measured on microsection shown in Fig. 3

No. Realtive growth rates, mm]10~3 Microstructure

<@ <@ 1 1 <@ 1 1 1 <@ /<@ 1 1 1 <@ 1 1 /< 1 1 1 Ridge angle a Shape
*E+ *1 1 1+ *1 1 1+ *E+ *1 1 1+ *1 1 1+ *1 1 1+
14 4.0 3.0 3.0 1.3 1.0 1103 Octahedral
15 3.5 2.7 4.0 0.9 0.7 1103 Octahedral
16 5.0 3.0 4.0 1.3 0.8 1103 Octahedral
17 5.0 4.5 4.5 1.1 1.0 1383 Octahedral
18 3.5 4.0 4.5 0.8 0.9 1383 Ridge blunted
19 9.2 7.0 7.8 1.2 0.9 1383 Octahedral
20 7.0 4.2 6.0 1.2 0.7 1103 Octahedral
21 5.0 4.0 4.0 1.3 1.0 1103 Octahedral
22 4.0 2.8 3.0 1.3 0.9 1103 Octahedral
23 5.0 2.0 3.1! 1.6 0.6 1103 Ridge growth
24 3.0 2.0 2.0 1.5 1.0 1153 Octahedral
25 5.0 4.0 3.5 1.4 1.1 1153 Octahedral
26 2.5 3.5 3.0 0.8 1.2 1153 Ridge blunted
27 7.8 6.8 6.8 1.1 1.0 1153 Octahedral
28 2.5 2.0 2.0 1.2 1.0 1303 Octahedral
29 6.5 6.0 6.5 1.0 0.9 1303 Octahedral
30 2.0 2.7 2.7 0.7 1.0 1303 Ridge blunted
31 7.0 6.0 6.0 1.2 1.0 1303 Octahedral
32 5.0 4.4 4.0 1.2 1.1 1303 Octahedral
33 4.2 3.0 2.5! 1.7 1.2 1303 Ridge growth
34 5.0 4.5 3.2 1.6 1.4 1153 Octahedral
35 2.0 2.5 2.5 0.8 1.0 1153 Ridge blunted
36 6.7 6.0 6.0 1.1 1.0 1153 Octahedral
37 1.7 2.2 1.5 1.1 1.5 503
38 3.5 4.7 3.5 1.0 1.3 503 Ridge blunted
39 3.0 3.0 4.0 0.8 0.8 503
40 3.0 3.0 4.0 0.8 0.9 503

!Average.

The equality in Eq. (A.1) is the condition for
stable octahedral growth of a crystal. For any given
ridge angle a the equation takes the form
<@ /<@ 1 1 1 "1/AM1#B(<@ 1 1 /<@ 1 1 1 )
*E+ *1 1 1+ *1 1 1+ *1 1 1+
#(<@ 1 1 /<@ 1 1 1 )2N1@2,
*1 1 1+ *1 1 1+
where A"sin a and B"2 cos a, and the vector
ratio <@ /<@ 1 1 1 can be plotted against (<@ 1 1 /
*E+ *1 1 1+ *1 1 1+
<@ 1 1 1 ) as in Fig. 8. The vector ratios for points
*1 1 1+
14}40 in Fig. 3 were calculated from measurements
of relative spacings between successive growth
traces as in Fig. 7 and are listed in Table 3. Similar
measurements were made for a number of primary
crystals including triangular and rectangular
shapes, the predicted shape changes compared with
the changes observed in the microsections. The
predictions were found to be accurate.
Appendix B
The plane GHIJ (see a and b in Fig. 9) is a ran-
dom section through an octahedral crystal. It will
have the equation
Ax#By#Cz#D"0
with reference to the coordinates OX, OY, OZ
which are the directions OD, OE and OA in a.
The crystal is growing so that each M1 1 1N plane
moves normal to its surface at a velocity
< which can vary for each face. We wish to
W1 1 1X
 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54 53

Fig. 9. Relationship of the velocity vectors to the octahedron.

compare < 1 1 (normal to the line AS) and trace AS of plane (11 1 11 ). <@ 1 1 is the projection of
*1 1 1+ *1 1 1+
< 1 1 1 (normal to the line AQ) with the velocity < 1 1 on the section GHIJ and is also in the
*1 1 1+ *1 1 1+
< of corner growth (in direction OA) or edge (11 11 0) plane, at an angle h to < 1 1 , so that
*E+ 1 *1 1 1+
growth (in the direction normal to AD). < 1 1 "<@ 1 1 cos h 2. Similarly, < 1 1 1 and
*1 1 1+ *1 1 1+ 1 *1 1 1+
Velocities <@ can be measured in the plane <@ 1 1 1 lie in the (11 11 0) plane and < 1 1 1 "
W1 1 1X *1 1 1+ *1 1 1+
GHIJ, e.g. in the direction KM. We wish to relate <@ 1 1 1 cos h (Fig. 1d).
*1 1 1+ 2
the measured <@ and < . Fig. 1c shows The vector < represents the growth velocity
W1 1 1X W1 1 1X *E+
the (11 11 0) plane which cuts the octahedron along normal to the edge AD, which is the direction of
ASBT. The velocity vector < 1 1 is normal to the OH in Figs. 9a and e. In the Section GHIJ this is
*1 1 1+
54 R. Wang et al. / Journal of Crystal Growth 207 (1999) 43} 54

measured in the direction KH. Both vectors lie in [2] H. Fredriksson, M. Hillert, H. Lange, J. Inst. Met. 101
the (0 11 0) plane and the angle between them is E. (1973) 285.
Hence < "<@ cos E. [3] Wei-hua Lu, A method to prepare specimens for observing
*E+ *E+ microstructure of Al}Si alloys, Chinese Patent No. 861 024
Thus, the actual growth velocities < and
*E+ 087, 9 April 1986.
< are related to the measured vector
W1 1 1X [4] J.W. Faust Jr., H.F. John, S.O. Hara, in: Schroeder (Ed.),
<@ , <@ 1 1 and <@ 1 1 1 by the equalities: Microsegregation Phenomena in Semi Conductor Crys-
*E+ *1 1 1+ *1 1 1+ tals, Interscience Publishing, New York, pp. 181}189.
< "<@ cos E,
*E+ *E+ [5] K. Morizane, A.F. Witt, H.C. Gates, J. Electrochem. Soc.
113 (1966) 51.
< 1 1 "<@ 1 1 cos h ,
*1 1 1+ *1 1 1+ 1 [6] J.R. Carruthers, J. Crystal Growth 32 (1976) 13.
< 1 1 1 "<@ 1 1 1 cos h . [7] Ru-yao Wang, Wei-hua Lu, L.M. Hogan, Met. Mater.
*1 1 1+ *1 1 1+ 2 Trans. A 28 (1997) 1233.
For any constant value of a (Fig. 7) the angles [8] Ru-yao Wang, Wei-hua Lu, Jun Guo, Proceedings of the
E, h and h remain constant during growth and Second International Conference on Aluminium Alloy,
1 2 Beijing, China, International Academic Publisher, New
a "xed relationship of the type expressed in Fig. 8 York, 1990, pp. 283}288.
exists between the two sides of Eq. (1). When a cha- [9] O.A. Atasoy, F. Yilmaz, R. Elliott, J. Crystal Growth 66
nges the relationship alters, but the change occurs (1984) 137.
very slowly and curves such as that of Fig. 8 each [10] A. Hellawell, Progr. Maters. Sci. 15 (1970) 3.
apply to an appreciable range of the angle a. [11] R.S. Wagner, Acta Metall. 8 (1960) 57.
[12] K.A. Jackson, Liquid Metals & Solidi"cation, ASM, Ohio,
1958, p. 17.
[13] W.Z. Sun et al., Rare Earth Elements in Aluminium Alloys,
References Weapon Publisher, Beijing, 1992, p. 209 (in Chinese).
[14] T.B. Abbott, B.A. Parker, Cast Met. 1 (1988) 122.
[1] Ru-yao Wang, Wei-hua Lu, L.M. Hogan, Mater. Sci. [15] A.A. Chernov, J. Crystal Growth 24/25 (1974) 13.
Technol. 11 (1995) 441. [16] W.A. Wilcox, J. Crystal Growth 38 (1977) 73.