ECE-1007 - Optoelectronics – Digital Assignment

1. The external power efficiency of an InGaAsP/InP planar LED is 0.8 % when the internally
generated optical power is 30 mW. Determine the transmission factor for the InP–air
interface if the drive current is 40 mA and the potential difference across the device is 1.6
V. The refractive index of InP may be taken as 3.46.

2. A GaAs planar LED emitting at a wavelength of 0.85 μm has an internal quantum

efficiency of 60% when passing a forward current of 36 mA s−1. Estimate the optical power
emitted by the device into air, and hence determine the external power efficiency if the
potential difference across the device is 1 V. It may be assumed that the transmission factor
at the GaAs–air interface is 0.68 and that the refractive index of GaAs is 3.6. Comment on
any assumptions made.

3. Estimate the external power efficiency of a GaAs planar LED when the transmission factor
of the GaAs–air interface is 0.68 and the internally generated optical power is 30% of the
electric power supplied. The refractive index of GaAs may be taken as 3.6. calculate: (a)
the coupling efficiency and optical loss in decibels of coupling the emitted light into a step
index fiber with an NA of 0.15, when the device is in close proximity to the fiber and is
smaller than the fiber core; (b) the optical loss relative to the optical power generated
internally if the device emits into a thin air gap before light is coupled into the fiber.

4. Estimate the optical power coupled into a step index fiber of 50 μm core diameter with an
NA of 0.18 from a DH surface emitter with an emission area diameter of 75 μm and a
radiance of 40 W sr−1 cm−2. The Fresnel reflection at the index-matched semiconductor–
fiber interface may be considered negligible. Further, determine the optical loss when
coupling light into the fiber relative to the power emitted by the device into air if the Fresnel
reflection at the semiconductor– air interface is 20%.

5. Estimate the CW operating lifetime for an AlGaAs LED with an activation energy of 0.6
eV and a constant of proportionality (β0) of 2.3 × 103 h−1 when the junction temperature of
the device is constant at 50 °C. It may be assumed that the LED is no longer useful when
its optical output power is 0.8 of its original value.

6. A double heterostructure injection laser has an optical cavity of length 50 µm and width 15 µm.
At normal operating temperature the loss coefficient is 10 cm-1 and the current threshold is 50
mA. When the mirror reflectivity at each end of the optical cavity is 0.3, estimate the gain factor
for the device
7. The longitudinal modes of a gallium arsenide injection laser emitting at a wavelength of 0.87 μm
are separated in frequency by 278 GHz. Determine the length of the optical cavity and the number
of longitudinal modes emitted. The refractive index of gallium arsenide is 3.6
8. Determine the gain coefficient of a lasing medium with absorption coefficient 20 cm-1 and
reflectivity of resonators 0.32 (r1 = r2), cavity length 100 μm

9. When the refractive index of a multimode laser depends on the wavelength, the
wavelength spacing can be written as:
𝜆2
∆𝜆 =
𝑑𝑛
2𝐿 (𝑛 − 𝜆 )
𝑑𝜆
𝑑𝑛
If the group refractive index, 𝑛 − 𝜆 𝑑𝜆 is 2.5 for GaAs at 1310 nm, what is the mode
spacing for a 300 μm long laser?
10. Consider a DFB laser operating at 1550nm, suppose that the refractive index is 3.5 for
InGaAsP, what should be the corrugation period for the first order grating with mode
integer ‘q’is equal to1 and 2? How many corrugations are needed for first order grating and
second order grating, if the cavity length is 20μm? Which one is easier to fabricate?
11. A laser emitting at a center wavelength of 780 nm has a spectral width of 26 nm and a peak
gain of 38 cm-1.
a) Plot the gain Vs wavelength of the laser.
b) If the loss coefficient is 28 cm-1, Show the region where lasing take place.
c) If the laser is 300 μm long and the refractive index is 3.5, how many modes
will be excited in the laser?
12. A PIN Photodiode has a quantum efficiency of 70% when the photons of energy 2.2 X 10-19 J are
incident on it. Calculate the wavelength of operation of the device along with the responsivity when
the photocurrent generated in the photodiode is 2.0 µ A. Also find out amount of incident power
for above current

13. When photons of energy 2 x10-20 are incident on a photodiode, its quantum efficiency is found to
be 85%. Find out the wavelength of operation, the incident optical power and responsivity when
the photo current in the diode is 4 µA.

14. A silicon APD has quantum efficiency of 70% at a wavelength of 0.55µm, the output current of the
device after avalanche is 15µA. Calculate the multiplication factor m after avalanche gain.

15. The phototransistor has a collector current of 15 mA when the incident optical power at a
wavelength of 1.26 μm is 125 μW. Estimate:
(a) the optical gain of the device under the above operating conditions;
(b) the common emitter current gain if the quantum efficiency of the base– collector
photodiode at a wavelength of 1.26 μm is 40%.

Submit on or before 20. 03. 2020