Naina Semiconductor

emiconductor Ltd. 1
160NTT

Thyristor – Thyristor Module

Features
• Improved glass passivation for high reliability
• Exceptional stability at high temperatures
• High di/dt and dv/dt capabilities
• Low thermal resistance

Maximum Ratings (TA = 250C unless otherwise noted)

Parameter Symbol Values Units
Maximum average forward current @ TJ
0 IF(AV) 160 A
= 85 C
Maximum average RMS forward current IF(RMS) 350 A
Maximum non-repetitive surge current
IFSM 5100 A
@ t = 10ms
2 2 2
Maximum I t for fusing @ t = 10ms It 120 kA s

M3 PACKAGE

Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)

Parameter Symbol Values Units
O
Operating junction temperature range TJ -65
65 to +125
+1 C
O
Thermal resistance, junction to case Rth(JC) 0.16 C/W

Electrical Characteristics (TA = 250C unless otherwise noted)

Parameter Symbol Values Units
Maximum average on-state current IT(max) 160 A
Maximum repetitive peak reverse voltage range VRRM 200 to 1600 V
Forward voltage drop VFM 1.5 V
Gate current required to trigger IGT 150 mA
Gate voltage required to trigger VGT 2.5 V
Holding current range IH 200 mA
Maximum latching current IL 500 mA
Critical rate of rise of off-state voltage dv/dt 1000 V/µs
RMS isolated voltage VISO 3500 V

1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450

4205450 • Fax: 0120-4273653
0120
sales@nainasemi.com • www.nainasemi.com
 Naina Semiconductor
emiconductor Ltd. 1
160NTT

ALL DIMENSIONS IN MM

Diode Configuration

2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450

4205450 • Fax: 0120-4273653
0120
sales@nainasemi.com • www.nainasemi.com