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pinoybix.org/2019/07/mcq-in-field-effect-transistor-devices-boylestad.html
July 29,
2019
This is the Multiple Choice Questions in Field Effect Transistor Devices from the book
Electronic Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking
for a reviewer in Electronics Engineering this will definitely help. I can assure you that this
will be a great help in reviewing the book in preparation for your Board Exam. Make sure to
familiarize each and every questions to increase the chance of passing the ECE Board Exam.
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MCQ in FET Devices
MCQ in Construction and Characteristics of JFETs
MCQ in Transfer Characteristics
MCQ in Specification Sheets (JFETs)
MCQ in Instrumentation
MCQ in Important Relationships
MCQ in Depletion-Type MOSFET
MCQ in Enhancement-Type MOSFET
MCQ in MOSFET Handling
MCQ in VMOS
MCQ in CMOS
A) VGS
B) VDS
C) IG
D) VDG
View Answer:
Answer: Option A
Solution:
A) n-channel
B) p-channel
C) p-n channel
View Answer:
Answer: Option C
Solution:
2/22
3. What is the range of an FET’s input impedance?
A) 10 Ω to 1 kΩ
B) 1 kΩ to 10 kΩ
C) 50 kΩ to 100 kΩ
D) 1 MΩ to several hundred MΩ
View Answer:
Answer: Option D
Solution:
4. Which of the following transistor(s) has (have) depletion and enhancement types?
A) BJT
B) JFET
C) MOSFET
View Answer:
Answer: Option C
Solution:
A) voltage, voltage
B) voltage, current
C) current, voltage
D) current, current
View Answer:
Answer: Option C
Solution:
3/22
A) bipolar, bipolar
B) bipolar, unipolar
C) unipolar, bipolar
D) unipolar, unipolar
View Answer:
Answer: Option B
Solution:
A) Drain
B) Gate
C) Source
View Answer:
Answer: Option D
Solution:
A) Zero amperes
B) Equal to ID
C) Depends on VDS
D) Undefined
View Answer:
Answer: Option A
Solution:
9. At which of the following is the level of VDS equal to the pinch-off voltage?
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B) When VGS is zero volts
C) IG is zero
View Answer:
Answer: Option D
Solution:
A) No bias
B) VDS > 0 V
C) VDS = VP
View Answer:
Answer: Option A
Solution:
11. Refer to the following characteristic curve. Calculate the resistance of the FET at VGS = –
0.25 V if ro = 10 kΩ.
A) 1.1378 kΩ
B) 113.78 Ω
C) 11.378 Ω
D) 11.378 kΩ
View Answer:
Answer: Option D
Solution:
12. What is the level of drain current ID for gate-to-source voltages VGS less than (more
negative than) the pinch-off level?
A) zero amperes
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B) IDSS
C) Negative value
D) Undefined
View Answer:
Answer: Option A
Solution:
13. The three terminals of the JFET are the ______, ______, and ______.
View Answer:
Answer: Option C
Solution:
A) VGS(off)
B) VP
C) VDS
View Answer:
Answer: Option B
Solution:
15. The region to the left of the pinch-off locus is referred to as the _______ region.
A) saturation
B) cutoff
6/22
C) ohmic
View Answer:
Answer: Option C
Solution:
16. Which of the following represent(s) the cutoff region for an FET?
A) ID = 0 mA
B) VGS = VP
C) IG = 0
View Answer:
Answer: Option D
Solution:
17. Referring to this transfer curve. Calculate (using Shockley’s equation) VGS at ID = 4 mA.
A) 2.54 V
B) –2.54 V
C) –12 V
D) Undefined
View Answer:
Answer: Option B
Solution:
7/22
A) 0.444 mA
B) 1.333 mA
C) 0.111 mA
D) 4.444 mA
View Answer:
Answer: Option A
Solution:
A) 0.25
B) 0.5
C) 1
D) 0
View Answer:
Answer: Option A
Solution:
20. The drain current will always be one-fourth of IDSS as long as the gate-to-source voltage
is _______ the pinch-off value.
A) one-fourth
B) one-half
C) three-fourths
View Answer:
Answer: Option B
Solution:
8/22
21. Which of the following ratings appear(s) in the specification sheet for an FET?
B) Current levels
C) Power dissipation
View Answer:
Answer: Option D
Solution:
22. Refer to this portion of a specification sheet. Determine the values of reverse-gate-
source voltage and gate current if the FET was forced to accept it.
View Answer:
Answer: Option B
Solution:
23. Hand-held instruments are available to measure _______ for the BJT.
A) βdc
B) IDSS
C) VP
View Answer:
Answer: Option A
Solution:
B) 3
C) 4
D) 3 or 4
View Answer:
Answer: Option D
Solution:
A) No direct electrical connection between the gate terminal and the channel
View Answer:
Answer: Option D
Solution:
26. Referring to the following transfer curve, determine the level of VGS when the drain
current is 20 mA.
A) 1.66 V
B) –1.66 V
C) 0.66 V
D) –0.66 V
View Answer:
Answer: Option A
Solution:
10/22
27. Refer to the following curves. Calculate ID at VGS = 1 V.
A) 8.167 mA
B) 4.167 mA
C) 6.167 mA
D) 0.616 mA
View Answer:
Answer: Option B
Solution:
28. It is the insulating layer of ________ in the MOSFET construction that accounts for the very
desirable high input impedance of the device.
A) SiO
B) GaAs
C) SiO2
D) HCl
View Answer:
Answer: Option C
Solution:
A) 3.70 V
B) 5.36 V
C) 7.36 V
D) 2.36 V
View Answer:
Answer: Option A
Solution:
30. The transfer curve is not defined by Shockley’s equation for the ________.
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A) JFET
B) depletion-type MOSFET
C) enhancement-type MOSFET
D) BJT
View Answer:
Answer: Option C
Solution:
View Answer:
Answer: Option D
Solution:
32. What is the purpose of adding two Zener diodes to the MOSFET in this figure?
View Answer:
Answer: Option B
Solution:
33. Which of the following is (are) the advantage(s) of VMOS over MOSFETs?
12/22
A) Reduced channel resistance
View Answer:
Answer: Option D
Solution:
34. Which of the following FETs has the lowest input impedance?
A) JFET
B) MOSFET depletion-type
C) MOSFET enhancement-type
View Answer:
Answer: Option A
Solution:
35. Which of the following input impedances is not valid for a JFET?
A) 1010 Ω
B) 109 Ω
C) 108 Ω
D) 1011 Ω
View Answer:
Answer: Option C
Solution:
Fill-in-the-blanks Questions
1. A junction field-effect transistor (JFET) is a ________ device.
13/22
A) current-controlled
B) voltage-controlled
C) voltage-current controlled
View Answer:
Answer: Option B
Solution:
2. The FET is a ________ device depending solely on either electron (n-channel) or hole (p-
channel) conduction.
A) unipolar
B) bipolar
C) tripolar
View Answer:
Answer: Option A
Solution:
3. One of the most important characteristics of the FET is its _________ impedance.
A) low input
B) medium input
C) high input
View Answer:
Answer: Option C
Solution:
4. The _________ transistor has become one of the most important devices used in the design
and construction of integrated circuits for digital computers.
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A) MOSFET
B) BJT
C) JFET
View Answer:
Answer: Option A
Solution:
5. In the n-channel transistor, the drain and source are connected to the _______ channel
while the gate is connected to the two layers of _______ material.
A) p-type, n-type
B) p-type, p-type
C) n-type, p-type
D) n-type, n-type
View Answer:
Answer: Option C
Solution:
6. In an FET transistor, the depletion region is ________ near the top of both p-type materials.
A) wider
B) narrower
View Answer:
Answer: Option A
Solution:
7. The pinch-off voltage continues to drop in a ________ manner as VGS becomes more and
more negative.
15/22
A) linear
B) parabolic
C) cubic
View Answer:
Answer: Option B
Solution:
8. The region to the right of the pinch-off locus is commonly referred to as the ________
region.
A) constant-current
B) saturation
C) linear amplification
View Answer:
Answer: Option D
Solution:
9. As VGS becomes ________ negative, the slope of each curve in the characteristics becomes
________ horizontal corresponding with an increasing resistance level.
A) less, more
B) more, less
C) more, more
View Answer:
Answer: Option C
Solution:
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A) using Shockley’s equation
C) characteristics
View Answer:
Answer: Option B
Solution:
A) ohmic region
B) cutoff region
C) power line
View Answer:
Answer: Option D
Solution:
B) ohmmeter (VOM)
C) curve tracer
View Answer:
Answer: Option C
Solution:
13. In a curve tracer, the ________ reveals the distance between the VGS curves for the n-
channel device.
A) vertical sens.
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B) horizontal sens.
C) Per step
D) gm
View Answer:
Answer: Option C
Solution:
A) VGS
B) VDS
C) VDG
D) ID
View Answer:
Answer: Option A
Solution:
15. The primary difference between the construction of a MOSFET and an FET is the ________.
C) threshold voltage
View Answer:
Answer: Option A
Solution:
16. The primary difference between the construction of depletion-type and enhancement-
type MOSFETs is ________.
View Answer:
Answer: Option B
Solution:
17. The level of ________ that results in the significant increase in drain current in
enhancement-type MOSFETs is called threshold voltage VT’.
A) VDD
B) VDS
C) VGS
D) VDG
View Answer:
Answer: Option C
Solution:
18. In an n-channel enhancement-type MOSFET with a fixed value of VT’, the _______ the level
of VGS’, the _____ the saturation level for VDS’.
A) higher, more
B) higher, less
C) lower, lower
View Answer:
Answer: Option A
Solution:
19/22
C) VGS has a positive level
View Answer:
Answer: Option B
Solution:
20. The specification sheet provides _________ to calculate the value of k for enhancement-
type MOSFETs.
A) VGS(on)
B) ID(on)
C) VGS(Th)
View Answer:
Answer: Option D
Solution:
21. ________ has high input impedance, fast switching speeds, and lower operating power
levels.
A) CMOS
B) FET
C) BJT
View Answer:
Answer: Option A
Solution:
22. The FET resistance in the ohmic region is ________ at VP and ________ at the origin.
A) smallest, largest
B) largest, smallest
20/22
C) larger, smaller
D) smaller, larger
View Answer:
Answer: Option B
Solution:
A) an insulator
B) a conductor
C) a semiconductor
View Answer:
Answer: Option A
Solution:
24. In an n-channel depletion-type MOSFET the region of positive gate voltages on the drain
or transfer characteristics is referred to as the _________ region with the region between
cutoff and the saturation level of ID referred to as the ________ region.
A) depletion, enhancement
B) enhancement, enhancement
C) enhancement, depletion
View Answer:
Answer: Option C
Solution:
25. VMOS FETs have a ________ temperature coefficient that will combat the possibility of
thermal runaway.
A) positive
B) negative
21/22
C) zero
View Answer:
Answer: Option A
Solution:
22/22