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Module 1: Mos Transistor Theory: Dr. G. Lakshmi Priya, AP (SG), SENSE, VIT, Chennai

The document provides information about the syllabus and assessment pattern for a course on MOS transistor theory. It includes 3 modules that will be covered: I-V characteristics, C-V characteristics, and non-ideal effects of MOS transistors. There will be 2 assignments, 2 CAT exams, 1 online quiz, and a final exam assessing student learning outcomes related to understanding fundamental MOS transistor concepts. The course is allotted 5 hours and aims to provide students with a clear understanding of key topics in MOS transistor operation and modeling.

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ASHUTOSH
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186 views17 pages

Module 1: Mos Transistor Theory: Dr. G. Lakshmi Priya, AP (SG), SENSE, VIT, Chennai

The document provides information about the syllabus and assessment pattern for a course on MOS transistor theory. It includes 3 modules that will be covered: I-V characteristics, C-V characteristics, and non-ideal effects of MOS transistors. There will be 2 assignments, 2 CAT exams, 1 online quiz, and a final exam assessing student learning outcomes related to understanding fundamental MOS transistor concepts. The course is allotted 5 hours and aims to provide students with a clear understanding of key topics in MOS transistor operation and modeling.

Uploaded by

ASHUTOSH
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

MODULE 1: MOS

TRANSISTOR THEORY

Dr. G. Lakshmi Priya, AP (SG), SENSE,


VIT, Chennai
ASSESSMENT PATTERN
Assessment Course
Date Max. Marks Weightage Remarks Outcomes
Type

Submission a day Question and


Assignment 1 before CAT 1 100 10 Rubrics given CO1 CO2
starts. separately.

Submission a day Question and


Assignment 2 before CAT 2 100 10 Rubrics given CO3 CO4
starts. separately. CO5

Submission 40 - 50 10 Separate quiz can be


created and send to CO5
between CAT 2 the students between
Online Quiz CO6
and FAT period. CAT 2 and FAT period.

CAT-1 15 CO1, CO2


Schedule will be
CAT-2 As per the announcement by the 15 announced by the CO3, CO4,
CO5
University University
FAT 40 All
MODULE 1: SYLLABUS

❑ I – V Characteristics

❑ C – V Characteristics

❑ Non – ideal effects of MOS Transistors

➢ Student Learning Outcomes (SLO): Hours Allotted:

Having a clear understanding of the subject related concepts and of contemporary issues 5 Hours

➢ Expected Course Outcome (ECO):

Clear understanding fundamental concepts of MOS transistors


MOSFET - SYMBOLS

drain drain

gate body gate body


A circle is
source sometimes
used on the gate
source
terminal
or to show active low or
drain input
drain

body body
gate gate

source source

n-channel MOSFET p-channel MOSFET


MOSFET - TYPES

1. Depletion MOSFETs (D-MOSFETs) : can be operated in either the


depletion mode or the enhancement mode (Negative VGS).
2. Enhancement MOSFETs (E-MOSFETs) : can be operated only in the
enhancement mode (Positive VGS) .
DEPLETION MOSFET - TYPES
ENHANCEMENT MOSFET - TYPES
ENHANCEMENT TYPE - N - MOSFET
N - MOSFET – WORKING PRINCIPLE

(a) DC voltage source applied between S - D (b) With applied Gate Voltage
3D VIEW OF N - MOSFET
THREE MODES OF OPERATION OF N - MOSFET
THREE REGIONS OF OPERATION – CUT OFF
THREE REGIONS OF OPERATION - LINEAR
THREE REGIONS OF OPERATION - SATURATION
BOOKS AND WEBLINKS
❑ TEXT BOOK

▪ Neil [Link], Harris, A. Banerjee, “CMOS VLSI Design, A circuits and System Perspective”, 2014,
Fourth Edition, Pearson Education, Noida, India

❑ REFERENCE BOOKS

▪ Jan M. Rabaey, Anantha Chadrakasan, BorivojeNikolic, “Digital Integrated Circuits: A Design


Perspective”, 2014, Third Edition, Prentice Hall India, New Jersey, US.

▪ Yogesh Chauhan, Darsen Duane Lu, Vanugopalan Sriramkumar, Sourabh Khandelwal, Juan Duarte,
NavidPayvadosi, Ai Niknejad, Chenming Hu, “FinFETModeling for IC Simulation and Design”, 2015,
Academic Press, Elsevier.

❑ WEBSITE LINKS

▪ [Link]
▪ [Link]
▪ [Link]
THANK YOU !!!

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