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CEP3205/CEB3205
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Lead free product is acquired. D

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter Symbol Limit Units
Drain-Source Voltage VDS 55 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 108.5 A
Drain Current-Pulsed a
IDM 434 A
Maximum Power Dissipation @ TC = 25 C 200 W
PD
- Derate above 25 C 1.3 W/ C
Operating and Store Temperature Range TJ,Tstg -55 to 175 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 0.75 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 C/W

This is preliminary information on a new product in development now . Rev 1. 2007.Feb

Details are subject to change without notice . http://www.cetsemi.com
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CEP3205/CEB3205
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 55 V
Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V 25 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2 4 V
Static Drain-Source
RDS(on) VGS = 10V, ID = 64A 6.5 8.5 mΩ
On-Resistance
Dynamic Characteristics c
Forward Transconductance gFS VDS = 25V, ID = 64A 30 S
Input Capacitance Ciss 2940 pF
VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 1030 pF
Reverse Transfer Capacitance Crss 30 pF
Switching Characteristics c
Turn-On Delay Time td(on) 27 54 ns
Turn-On Rise Time tr VDD = 28V, ID = 62A, 14 28 ns
VGS = 10V, RGEN = 4.5Ω
Turn-Off Delay Time td(off) 56 112 ns
Turn-Off Fall Time tf 18 36 ns
Total Gate Charge Qg 75.2 100 nC
VDS = 44V, ID = 62A,
Gate-Source Charge Qgs VGS = 10V 22.9 nC
Gate-Drain Charge Qgd 20.3 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS 108 A
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 64A 1.3 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

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CEP3205/CEB3205
180 160
VGS=10,9,8,7V 25 C
150
ID, Drain Current (A)

ID, Drain Current (A)

120
120
VGS=6V
90 80

60 VGS=5V TJ=125 C
40
30
-55 C
0 0
0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

6000 2.2
ID=64A
RDS(ON), On-Resistance(Ohms)

VGS=10V
5000 1.9
C, Capacitance (pF)

RDS(ON), Normalized

4000 1.6
Ciss

3000 1.3

2000 1.0

Coss
1000 0.7
Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

ID=250µA
IS, Source-drain current (A)

1.2

1.1
VTH, Normalized

1
10
1.0

0.9
0
10
0.8

0.7

0.6 -1
10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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CEP3205/CEB3205
10
VDS=44V 3
VGS, Gate to Source Voltage (V)

10 RDS(ON)Limit
ID=62A
8

ID, Drain Current (A)

100ms
2
10
6
1ms
10ms
4 DC
1
10

2
TC=25 C
TJ=175 C
0 Single Pulse
0 10
0 20 40 60 80 10
-1
10
0
10
1
10
2

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2

-1 0.1 PDM
10
0.05 t1
0.02 t2
0.01
1. RθJC (t)=r (t) * RθJC
Single Pulse 2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-2 -1 0 1 2 3 4
10 10 10 10 10 10 10

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve