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BAR 18

® BAS70-04 06

SMALL SIGNAL SCHOTTKY DIODES

A1
K
K2
K1
N.C.

A A2

BAR18 BAS70-04

K A

A1 K1

A2 K2

BAS70-05 BAS70-06
DESCRIPTION
Low turn-on and high breakdown voltage diodes in-
tended for ultrafast switching and UHF detectors in SOT-23
hybrid micro circuits. (Plastic)

ABSOLUTE RATINGS (limiting values)


Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 70 V

IF Continuous forward current 70 mA

Ptot Power dissipation (note 1) Tamb = 25°C 250 mW

Tstg Maximum storage temperature range - 65 to +150 °C

Tj Maximum operating junction temperature * 150 °C

TL Maximum temperature for soldering during 10s 260 °C


Note 1: for double diodes, Ptot is the total dissipation of both diodes

dPtot 1
* : < thermal runaway condition for a diode on its own heatsink
dTj Rth( j − a)

THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient (*) 500 °C/W
(*) Mounted on epoxy board with recommended pad layout.

December 2001 - Ed: 3A 1/4


BAR 18 / BAS70-04 06

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
VBR Tj = 25°C IR = 10µA 70 V

VF * Tj = 25°C IF = 1mA 410 mV

IR ** Tj = 25°C VR = 50V 200 nA

Pulse test: * tp = 380µs, δ < 2%


** tp = 5 ms, δ < 2%

DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C Tj = 25°C VR = 0V F = 1MHz 2 pF

τ* Tj = 25°C IF = 5mA Krakauer Method 100 ps

* Effective carrier life time.

Fig. 1-1: Forward voltage drop versus forward Fig. 1-2: Forward voltage drop versus forward
current (low level). current (high level).

IFM(A) IFM(A)
2.0E-2 7E-2
Tj=100°C
1.8E-2 Typical values
Tj=100°C
1.6E-2 Typical values
1.4E-2 1E-2
1.2E-2 Tj=25°C
Tj=25°C
Maximum values
1.0E-2 Maximum values

8.0E-3 Tj=25°C
Typical values 1E-3 Tj=25°C
6.0E-3 Typical values

4.0E-3
2.0E-3 VFM(V) VFM(V)
0.0E+0 1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

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BAR 18 / BAS70-04 06

Fig. 2: Reverse leakage current versus reverse Fig. 3: Reverse leakage current versus junction
voltage applied (typical values). temperature (typical values)

IR(µA) IR(µA)
1E+1 5E+2
VR=70V
Tj=100°C
1E+2
1E+0
1E+1
1E-1
Tj=25°C 1E+0

1E-2 1E-1
VR(V) Tj(°C)
1E-3 1E-2
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 25 50 75 100 125 150

Fig. 4: Junction capacitance versus reverse voltage Fig. 5: Relative variation of thermal impedance
applied (typical values). junction to ambient versus pulse duration (alumine
substrate 10mm*8mm*0.5mm).

C(pF) Zth(j-a)/Rth(j-a)
2.0 1.00
F=1MHz
Tj=25°C
δ = 0.5
1.0
δ = 0.2

0.10 δ = 0.1

Single pulse
VR(V) tp(s) δ=tp/T tp
0.1 0.01
1 10 100 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2

Fig. 6: Thermal resistance junction to ambient ver-


sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35µm).

Rth(j-a) (°C/W)
350
P=0.25W

300

250

200

S(Cu) (mm²)
150
0 5 10 15 20 25 30 35 40 45 50

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BAR 18 / BAS70-04 06

PACKAGE MECHANICAL DATA


SOT23 (Plastic)
E A
DIMENSIONS
REF. Millimeters Inches
e
Min. Max. Min. Max.
e1 D
B
A 0.89 1.4 0.035 0.055
A1 0 0.1 0 0.004
S B 0.3 0.51 0.012 0.02
A1 c 0.085 0.18 0.003 0.007
D 2.75 3.04 0.108 0.12
L e 0.85 1.05 0.033 0.041
e1 1.7 2.1 0.067 0.083
H
E 1.2 1.6 0.047 0.063
H 2.1 2.75 0.083 0.108
L 0.6 typ. 0.024 typ.
c
S 0.35 0.65 0.014 0.026

FOOTPRINT DIMENSIONS
0.9 0.9
0.035 0.035
0.043
1.1

1.9
0.075
2.35
0.92

mm
1.45
inch
0.037
0.043
1.1

0.9
0.035

Ordering type Marking Package Weight Base qty Delivery mode


BAR18 D76 SOT-23 0.01g 3000 Tape & reel
BAS70-04 D96 SOT-23 0.01g 3000 Tape & reel
BAS70-05 D97 SOT-23 0.01g 3000 Tape & reel
BAS70-06 D98 SOT-23 0.01g 3000 Tape & reel
■ Epoxy meets UL94,V0
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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