(1) Power diode

Basic structure of Power Diode:

Power diode consists of three layers. Top layer is a heavily doped P+ layer. Middle layer is lightly
doped n– layer and the last layer is a heavily doped n+ layer.

The heavily doped p+ layer act as an anode. The thickness of this layer is around 10 μm and
doping level is 1019 cm-3.

Middle layer of lightly doped n – is known as a drift layer. The thickness of the drift layer
depends on the required breakdown voltage. The breakdown voltage increases with an
increase in the width of the drift layer. Resistivity of this layer is high because of the low
level of doping. If the width of the drift layer increased, then the on-state voltage drop
increase therefore power loss is more. The doping level of the drift layer is 10 14 cm-3.

Operating Principle of Power diode:

 The operating principle of power diode is same as the conventional PN junction diode. A
diode conducts when the anode voltage is higher than the cathode voltage. The forward
voltage drop across the diode is very low around 0.5V to 1.2V. In this region, the diode
works as a forward characteristic.

If the cathode voltage is higher than the anode voltage, then the diode works as
blocking mode. In this mode, diode works according to the reverse characteristic.

I-V characteristic of Power Diode:

The I-V characteristic of power diode is as shown in the figure. The forward current
increase linearly with an increase in forward voltage.

A very small amount of leakage current flows in the reverse bias (blocking mode). The
leakage current is independent of the applied reverse voltage. The leakage current
flows due to the minority charge carriers. When the reverse voltage reaches the reverse
breakdown voltage, avalanche breakdown occurs. Once the reverse breakdown occurs,
the reverse current increase drastically with small increase in reverse voltage. The
reverse current can control by an external circuit.

Application of Power Diode in Power Electronics:

1. High voltage rectifier

2. As freewheeling diode
3. As feedback diode

In the case of reverse breakdown, As the voltage and current of the diode are large, the
power dissipation is dangerously high and it can destroy the device.
Types of Power Diode
The classification of these diodes can be done based on the reverse recovery time, the
process of manufacturing & the depletion region penetration in reversed bias condition.

The power diodes depending on the reverse recovery time as well as the process of
manufacturing are classified into three types such as

 General Purpose Diodes

 Fast Recovery Diodes
 Schottky Diodes

Operating Principle of Signal diode:

Signal diodes enable the current capability up to 100 milliamps and they are known for
processing the information found in electrical signals sent from electrical transmitter.
Germanium diodes have a forward voltage drop about 0.2 volts are used as detecting circuits in
radios.

I-V characteristic of signal Diode:

The arrow always points in the direction of conventional current flow through the diode meaning
that the diode will only conduct if a positive supply is connected to the Anode, ( a ) terminal and
a negative supply is connected to the Cathode ( k ) terminal thus only allowing current to flow
through it in one direction only, acting more like a one way electrical valve, ( Forward Biased
Condition ).
However, we know from the previous tutorial that if we connect the external energy source in the
other direction the diode will block any current flowing through it and instead will act like an
open switch, ( Reversed Biased Condition ) as shown below.
Application of Signal Diode in Power Electronics:

1. Televisions

2. Radios

Types of Signal Diodes

Here is the list of some of the signal diodes which are frequently used.

 1N4973
 1N4148
 1N34A (Germanium Diode)
 1N4454