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HartChapter10solutions PDF
HartChapter10solutions PDF
3/20/10
10-1)
a) For the elementary MOSFET drive circuit, losses can be determined from the energy
absorbed by the transistor. In Probe, the integral of instantaneous power is obtained by
entering the expression S(W(M1)) to get the energy absorbed by the transistor. For turn-
off losses, restrict the data to 2.5 µs to 4.3 µs. The energy absorbed is 132 µJ. For turn-
on losses, restrict the data to 5 µs to 5.6 µs. The energy absorbed by the MOSFET is
53.3 µJ. Power is determined as
1 1
T 5 s
f s 20000
W 132 J
Pturn off 26.4 W .
T 5 s
W 53.3 J
Pturn on 10.7 W .
T 5 s
For the emitter-follower drive circuit restrict the data to 2.5 µs to 2.9 µs, giving 21.3 µJ
for turn-off. Restrict the data to 5 µs to 5.3 µs, giving 12.8 µJ for turn-on. Power is then
W 21.3 J
Pturn off 4.26 W .
T 5 s
W 12.8 J
Pturn on 2.56 W .
T 5 s
b) For the first circuit, peak gate current is 127 mA, average gate current is zero, and rms
gate current is 48.5 mA. For the second circuit, peak gate current is 402 mA (and -837
mA), average gate current is zero, and rms gate current is 109 mA.
10-2)
Reducing drive circuit resistance significantly reduces the switching time and power loss
for the MOSFET.
10-3)
The values of Vi, R1, R2, and C must be selected for the BJT base drive circuit. First,
select Vi: let Vi=20 V. then, the value of R1 is determined from the initial current spike
requirement. Solving for R1 in Eq. 10-1,
Vi vBE 20 1
R1 3.8
I B1 5
The steady-state base current in the on state determines R2. From Eq. 10-2,
Vi vBE 20 1
R2 R1 3.8 34.2
IB2 0.5
The value of C is determined from the required time constant. For a 50% duty ratio at
100 kHz, the transistor is on for 5 µs. Letting the on time for the transistor be five time
constants, τ = 1µs. From Eq. 10-3,
R1 R2
RE C C (3.42)C 1 s
R1 R2
C 0.292 F
10-4)
The values of Vi, R1, R2, and C must be selected for the BJT base drive circuit. First,
select Vi; let Vi = 20 V. then, the value of R1 is determined from the initial current spike
requirement. Solving for R1 in Eq. 10-1,
Vi vBE 20 1
R1 6.33
I B1 3
The steady-state base current in the on state determines R2. From Eq. 10-2,
Vi vBE 20 1
R2 R1 6.33 25.3
IB2 0.6
The value of C is determined from the required time constant. For a 50% duty ratio at
120 kHz, the transistor is on for 4.17 µs. Letting the on time for the transistor be five
time constants,
R1 R2
RE C C 5.06 C 0.833 s
R1 R2
C 0.165 F
10-5)
t t
iQ I L 1 4 1 6
4 8(10)6 t
t 0.5(10)
f
I t 4t
iC L 8(10)6 t
tf 0.5(10) 6
I Lt 2 4t 2
vC (t ) 6 6
8(10)13 t 2
2Ct f 2(0.05)(10) (0.5)(10)
iQ 0
iC I L 4
IL I t
vC (t t f ) L f 8(10)7 (t 0.5(10) 6 ) 20
C 2C
b) With tx > tf, the waveforms are like those in Fig. 10.12(d).
10-6)
t t
iQ I L 1 4 1 6
4 8(10)6 t
t 0.5(10)
f
I t 4t
iC L 6
8(10)6 t
tf 0.5(10)
I Lt 2 4t 2
vC (t ) 6 6
4(10)14 t 2
2Ct f 2(0.01)(10) (0.5)(10)
Capacitor voltage at t = tf = 0.5 µs would be 100 volts, which is greater than Vs.
Therefore, the above equations are valid only until vC reaches Vs:
vC (t x ) Vs 50 4(10)14 t x2 t x 0.354 s
iQ 4 8(10)6 t
iC 0
vC Vs 50
b) With tx < tf, the waveforms are like those of Fig. 10.12(b).
Equation 10-12 is not valid here because tx < tf. Switch power is determined from
T T T
1 1
PQ
T 0
p(t )dt iQ vQ dt f iQ vC dt
T 0 0
tx tf
120000 4 8 10 t 4(10) t dt 4 8 106 t (50)dt 1.84 W .
6 14 2
0 tx
Snubber loss is determined by the amount of stored energy in the capacitor that will be
transferred to the snubber resistor:
1 0.01(106 (50)2 (120000)
PR CVs2 f 1.5 W .
2 2
10-7)
I Lt f 10(0.1)(10) 6
C 3.33 nF .
2Vs 2(150)
ton D / f 0.4 /100000
R 240
5C 5C (5) 3.33(10) 9
1
PR (3.33(10) 9 (150) 2100000 3.75 W .
2
I L2t 2f f 102 [0.1(10) 6 ]2105
PQ 1.25 W .
24C 24(3.33)(10) 9
10-8)
I Lt f 10(0.1)(10) 6
C 6.67 nF .
2V f 2(75)
ton D / f 0.4 /100000
R 120
5C 5C 5(6.67)(10) 9
1 1
PR CVs2 f (6.67)(10)9 (150)2100000 7.5 W .
2 2
I L t f f 102 [.1(10) 6 ]2105
2
PQ 0.625 W .
24C 24(6.67)(10) 7
10-9)
I Lt f 7(0.5)(10) 6
C 10.3 nF .
2Vs 2(170)
ton D / f 0.4 /125000
R 62.2
5C 5C 5(10.3)(10) 9
1 1
PR CVs2 f (10.3)(10)9 (170)2125000 18.6 W .
2 2
I t f 102 [0.5(10) 6 ]2125000
2 2
PQ L f 6.2 W .
24C 24(10.3)(10)9
10-10)
I Lt f 7(0.5)(10) 6
C 14.0 nF .
2V f 2(125)
ton D / f 0.4 /125000
R 45.7
5C 5C 5(14)(10) 9
1 1
PR CVs2 f (14)(10) 9 (170)2125000 25.3 W .
2 2
I t f 102 [0.5(10) 6 ]2125000
2 2
PQ L f 4.56 W .
24C 24(14)(10) 9
10-11)
52 [0.5(10) 6 ]2 200000
I L2t 2f f
C 52.1 nF .
24 PQ 24(1)
ton D / f 0.35 / 200000
R 6.72
5C 5C 5(52.1)(10) 9
1 1
PR CVs2 f (52.1)(10) 9 (80) 2 200000 33.3 W .
2 2
10-12)
62 [1(10) 6 ]2100000
I L2t 2f f
C 75 nF .
24 PQ 24(2)
ton D / f 0.3 /100000
R 8.0
5C 5C 5(75)(10) 9
1 1
PR CVs2 f (75)(10) 9 (120) 2100000 54 W .
2 2
10-13)
TJ TA 150 30
b) P 3W
R , JA 40
10-14)
TJ TA 175 25
b) P 2.73 W
R , JA 55
10-15)
10-16)
10-17)
TJ P R , JC R ,CS R , SA TA
TJ TA 110 40
R , SA R , JC R ,CS 0.7 1.0 2.19 C / W
P 18
10-18)
From Fig. 10.24 using the bottom curve for a single pulse,
Z , JC 0.013 C / W for a pulse of 105 sec.
TJ Pdm Z , JC 500W 0.013 C / W 6.5 C
10-19)
a) For 50 kHz and D = 0.1, the pulse width is 2s. From Fig. 10.24, Z , JC 0.11C / W .
TJ Pdm Z , JC 100 0.11 11 C
b) Using R , JC 1.05 C / W ,
TJ Pavg R , JC Pdm D R , JC 100 0.11.05 10.5 C.