2SK3567

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

2SK3567
Switching Regulator Applications
Unit: mm

• Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.)

• High forward transfer admittance: |Yfs| = 2.5S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 600 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 3.5
Drain current Pulse (t = 1 ms) A
IDP 14
(Note 1)
1: Gate
Drain power dissipation (Tc = 25°C) PD 35 W 2: Drain
3: Source
Single pulse avalanche energy
EAS 201 mJ
(Note 2)
Avalanche current IAR 3.5 A
JEDEC ―
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
JEITA SC-67
Channel temperature Tch 150 °C
TOSHIBA 2-10U1B
Storage temperature range Tstg -55~150 °C
Weight : 1.7 g (typ.)

Thermal Characteristics

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 28.8 mH, IAR = 3.5 A, RG = 25 Ω 1

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

1 2004-07-01
 2SK3567
Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 µA

Gate-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 1.8 A ⎯ 1.7 2.2 Ω
Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 1.8 A 0.7 2.5 ⎯ S
Input capacitance Ciss ⎯ 550 ⎯
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 6 ⎯ pF

Output capacitance Coss ⎯ 60 ⎯

10 V ID = 1.8 A VOUT
Rise time tr VGS ⎯ 12 ⎯
0V
Turn-on time ton RL = ⎯ 45 ⎯
50 Ω
Switching time 111 Ω ns
Fall time tf ⎯ 13 ⎯
VDD ∼
− 200 V

Turn-off time toff Duty <

= 1%, tw = 10 µs ⎯ 80 ⎯

Total gate charge Qg ⎯ 16 ⎯

Gate-source charge Qgs VDD ∼
− 400 V, VGS = 10 V, ID = 3.5 A ⎯ 10 ⎯ nC

Gate-drain charge Qgd ⎯ 6 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR ⎯ ⎯ ⎯ 3.5 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 14 A
Forward voltage (diode) VDSF IDR = 3.5 A, VGS = 0 V ⎯ ⎯ −1.7 V

Reverse recovery time trr IDR = 3.5 A, VGS = 0 V, ⎯ 1400 ⎯ ns

Reverse recovery charge Qrr dIDR/dt = 100 A/µs ⎯ 9.0 ⎯ µC

Marking

K3567 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

2 2004-07-01
 2SK3567

ID – VDS ID – VDS
2 5
COMMON SOURCE 15,10 15,10
5
Tc = 25°C 6
8 5.5
PULSE TEST 5.5 8

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

1.6 6 4

COMMON SOURCE
4.8 Tc = 25°C
1.2 3
PULSE TEST

5
4.6
0.8 2

4.4
1 4.5
0.4
4.2
VGS = 4 V
VGS = 4V
0 0
0 1 2 3 4 5 0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ID – VGS VDS – VGS

4 20
VDS (V)
COMMON SOURCE
COMMON SOURCE
Tc = 25℃
VDS = 10 V
DRAIN CURRENT ID (A)

16 PULSE TEST
3 PULSE TEST
DRAIN-SOURCE VOLTAGE

12

8 ID = 3.5 A

Tc = −55°C
1 100
4 1.8
25

1
0 0
0 2 4 6 8 10 0 4 8 12 16

GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V)

⎪Yfs⎪ – ID RDS (ON) – ID

10 10
FORWARD TRANSFER ADMITTANCE

COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

Tc = 25°C
PULSE TEST

Tc = −55°C
RDS (ON) (Ω)

25
⎪Yfs⎪ (S)

100
1

VGS = 10 V､15V

COMMON SOURCE
VDS = 20 V
PULSE TEST
0.1 1
0.1 1 10 0.1 1 10

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

3 2004-07-01
 2SK3567

RDS (ON) – Tc IDR – VDS

10 100
COMMON SOURCE COMMON SOURCE
DRAIN-SOURCE ON RESISTANCE

VGS = 10 V Tc = 25°C

DRAIN REVERSE CURRENT

8 PULSE TEST PULSE TEST

10
RDS (ON) ( Ω)

IDR (A)
ID = 3.5A

4 1.8
1

2 1
10

5 1 VGS = 0, −1 V
3
0 0.1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2

CASE TEMPERATURE Tc (°C) DRAIN-SOURCE VOLTAGE VDS (V)

CAPACITANCE – VDS Vth – Tc

10000 5
GATE THRESHOLD VOLTAGE

4
(pF)

1000 Ciss
CAPACITANCE C

3
Vth (V)

100 Coss
2

COMMON SOURCE
COMMON SOURCE
10 Crss VDS = 10 V
VGS = 0 V 1
ID = 1 mA
f = 1 MHz
Tc = 25°C PULSE TEST
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160

DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C)

DYNAMIC INPUT / OUTPUT

PD – Tc CHARACTERISTICS
50 500 20
VDS (V)

GATE-SOURCE VOLTAGE VGS (V)

DRAIN POWER DISSIPATION

40 400 16
VDS
VDD = 100 V
DRAIN-SOURCE VOLTAGE

30 300 12
PD (W)

200

20 200 400 8

COMMON SOURCE
VGS ID = 3.5 A
10 100 4
Tc = 25°C
PULSE TEST
0 0 0
0 40 80 120 160 200 0 5 10 15 20 25

CASE TEMPERATURE Tc (°C) TOTAL GATE CHARGE Qg (nC)

4 2004-07-01
 2SK3567

rth – tw
10

NORMALIZED TRANSIENT THERMAL

IMPEDANCE rth (t)/Rth (ch-c)
1 Duty=0.5

0.2
0.1
0.1
0.05
0.02 PDM

t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.001
10μ 100μ 1ｍ 10ｍ 100ｍ 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS – Tch

100 240

200
AVALANCHE ENERGY

ID max (PULSED) *

160
DRAIN CURRENT ID (A)

10 100 µs *
EAS (mJ)

ID max (CONTINUOUS) *
120
1 ms *

1 DC OPERATION 80
Tc = 25°C

40

0
0.1 25 50 75 100 125 150
※ SINGLE NONREPETITIVE PULSE
Tc=25℃ CHANNEL TEMPERATURE (INITIAL)
CURVES MUST BE DERATED Tch (°C)
LINEARLY WITH INCREASE IN
VDSS max
TEMPERATURE.
0.01 BVDSS
1 10 100 1000 15 V
DRAIN-SOURCE VOLTAGE VDS (V) IAR
−15 V
VDD VDS

TEST CIRCUIT WAVE FORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 28.8mH 2 ⎜B − V ⎟
⎝ VDSS DD ⎠

5 2004-07-01
 2SK3567

RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

6 2004-07-01