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  • Process: Small Signal Transistor

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    Victor Hemz
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    This document provides details about a PNP high voltage transistor chip process called CP710. The process uses an epitaxial planar method with a die size of 26x26 mils and thickness of 9.0 mils. Aluminum top side metalization of 30,000Å and gold back side metalization of 18,000Å are used. A 4 inch wafer can produce 17,130 gross dies, with principal device types including CMPTA94, CXTA94, CZTA94, and MPSA94. Typical electrical characteristics are also listed.

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    CP710

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    This document provides details about a PNP high voltage transistor chip process called CP710. The process uses an epitaxial planar method with a die size of 26x26 mils and thickness of 9.0 mils. Aluminum top side metalization of 30,000Å and gold back side metalization of 18,000Å are used. A 4 inch wafer can produce 17,130 gross dies, with principal device types including CMPTA94, CXTA94, CZTA94, and MPSA94. Typical electrical characteristics are also listed.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    4 views2 pages

    Process: Small Signal Transistor

    Uploaded by

    Victor Hemz
    This document provides details about a PNP high voltage transistor chip process called CP710. The process uses an epitaxial planar method with a die size of 26x26 mils and thickness of 9.0 mils. Aluminum top side metalization of 30,000Å and gold back side metalization of 18,000Å are used. A 4 inch wafer can produce 17,130 gross dies, with principal device types including CMPTA94, CXTA94, CZTA94, and MPSA94. Typical electrical characteristics are also listed.

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    © All Rights Reserved
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    of 2

    PROCESS CP710

    Small Signal Transistor


    PNP - High Voltage Transistor Chip

    PROCESS DETAILS
    Process EPITAXIAL PLANAR
    Die Size 26 x 26 MILS
    Die Thickness 9.0 MILS
    Base Bonding Pad Area 6.1 x 4.9 MILS
    Emitter Bonding Pad Area 5.2 x 5.2 MILS
    Top Side Metalization Al - 30,000Å
    Back Side Metalization Au - 18,000Å

    GEOMETRY
    GROSS DIE PER 4 INCH WAFER
    17,130

    PRINCIPAL DEVICE TYPES


    CMPTA94
    CXTA94
    CZTA94
    MPSA94

    R5 (22-March 2010)
    w w w. c e n t r a l s e m i . c o m
    PROCESS CP710
    Typical Electrical Characteristics

    R5 (22-March 2010)
    w w w. c e n t r a l s e m i . c o m

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