Assignment of organic chemistry

NAME:

M Asif 91

M Yousaf 92

M Faizan 105

M Talha 122

M. Farooq 127

M Asif 129

Topic:
DOPING AND PURIFICATION OF SILICON

Section:
CF2

SUBMTTED TO:
Prof: Hania Younas
Doping:
Addition of impurity will change the conductor ability and it acts as a semiconductor. The process of
adding an impurity to an intrinsic or pure material is called doping and the impurity is called a dopant.
After doping, an intrinsic material becomes an extrinsic material. Practically only after doping these
materials become usable.

Doping of silicone:
N-type :

In N-type doping, phosphorus or arsenic is added to the silicon in small quantities. Phosphorus and

arsenic each have five outer electrons, so they're out of place when they get into the silicon lattice. The
fifth electron has nothing to bond to, so it's free to move around. It takes only a very small quantity of
the impurity to create enough free electrons to allow an electric current to flow through the silicon. N-
type silicon is a good conductor. Electrons have a negative charge, hence the name N-type.

When an impurity is added to silicon without modifying the crystal structure, an N-type material is
produced. In some atoms, electrons have five electrons in their valence band such as arsenic (As) and
antimony (Sb). Doping of silicon with either impurity must not change the crystal structure or the
bonding process. The extra electron of impurity atom does not take part in a covalent bonding. These
electrons are loosely held together by their originator atoms. 

Effect of Doping on N-type Material

The effect of doping on an N-type material is as follows −

On addition of Arsenic to pure Silicon, the crystal becomes an N-type material.

Arsenic atom has additional electrons or negative charges that do not take part in the process of
covalent bonding.
These impurities give up or donate, one electron to the crystal and they are referred to as donor
impurities.

An N-type material has extra or free electrons than an intrinsic material.

An N-type material is not negatively charged. Actually all of its atoms are all electrically neutral.

These extra electrons do not take part in the covalent bonding process. They are free to move about
through the crystal structure.

An N-type extrinsic silicon crystal will go into conduction with only 0.005eV of energy applied.

Only 0.7eV is required to move electrons of intrinsic crystal from the valence band into the conduction
band.

Normally, electrons are considered to be the majority current carriers in this type of crystal and holes
are the minority current carriers. The quantity of donor material added to Silicon finds out the number
of majority current carriers in its structure.

The number of electrons in an N-type silicon is many times greater than the electron-hole pairs of
intrinsic silicon. At room temperature, there is a firm difference in the electrical conductivity of this
material. There are abundant current carriers to take part in the current flow. The flow of current is
achieved mostly by electrons in this type of material. Therefore, an extrinsic material becomes a good
electrical conductor.

P-type:
The crystal structure of Silicon is altered when doped with an acceptor element — in this case, Indium.
A piece of P material is not positively charged. Its atoms are primarily all electrically neutral.

There are, however, holes in the covalent structure of many atom groups. When an electron moves in
and fills a hole, the hole becomes void. A new hole is created in the bonded group where the electron
left. Hole movement in effect is the result of electron movement. A P-type material will go into
conduction with only 0.05 eV of energy applied.
The above figure shows how a P-type crystal will respond when connected to a voltage source. Note
that there are larger numbers of holes than electrons. With voltage applied, the electrons are attracted
to the positive battery terminal.

Holes move, in a sense, toward the negative battery terminal. An electron is picked up at this point. The
electron immediately fills a hole. The hole then becomes void. At the same time, an electron is pulled
from the material by the positive battery terminal. Holes therefore move toward the negative terminal
due to electrons shifting between different bonded groups. With energy applied, hole flow is
continuous.

Effect of Doping on P-type Material:

The effect of doping on a P-type material is as follows −

When Indium (In) or Gallium (Ga) is added to pure silicon, a P-type material is formed.

This type of dopant material has three valence electrons. They are eagerly looking for a fourth electron.

In P type material, each hole can be filled with an electron. To fill this hole area, very less energy is
required by electrons from the neighboring covalent bonded groups.

Silicon is typically doped with doping material in the range of 1 to 106. This means that P material will
have much more holes than the electron-hole pairs of pure silicon.

At room temperature, there is a very determined characteristic difference in the electrical conductivity
of this material.
Purification:
 Si purification, means you have already metallurgical-grade Si (MGS), which is usually 99% pure.
Therefore, you need to purify this MGS to get electronic-grade Si (EGS), which is suitable for electronic
devices and integrated circuits.

 A process for purifying silicon of high purity to a higher and more useful degree of purity.

The purification is processed in a few standard steps:

1-Chemical Transformation into volatile liquids, such as tri-chloro-silane (TCS). MGS+HCL-->SiCl3H+H2

2-Distillation of TCS to poly Si rods, by Siemens process

3-Crystallization of Si rods by so many crystal growth methods, such as :

i. Czochralski (CZ) process (Crystal pulling)

ii. Floating zone (FZ) process,

Each method has its own advantages and disadvantages. For instance content of unwanted impurities,
O2, C, etc, and the homogeneity of added doping concentration.

Processes for the preparation of elemental silicon by vapor phase reduction of silicon halides by zinc or
hydrogen are well known and when carried out with very pure reagents produce very high purity
elemental silicon having semiconductor properties. However, when mak ing silicon semiconductor
devices, it is normally necessary to melt the silicon to consolidate needle-form silicon obtained from the
reduction process to form single crystals of the silicon. Sometimes it is necessary to further purify In
many cases it is desirable to add doping agents. In carrying out this processing of high purity silicon it is
necessary to perform the operations in a container constructed of material which will impart the least
amount of impurities to the silicon. It has been found that silica equipment adds less unwanted
impurities than other materials. Unfortunately, when the temperature of a silicon-silica interface is
allowed to exceed the melting point of silicon by a few degrees, there is a tendency on the part of the
silicon to adhere to the silica surface. Since the coefiicient of expansion for solid silicon is much greater
than for solid fused silica, a silica container having a wall thickness of greater than about .1 to .2 mm.
will always be broken when a slowly solidifying mass of silicon is allowed to cool to room temperature.
Attempts to avoid this problem include the use of thinwall .1 to .2 mm.) silica containers which do not
have a tendency to crack between meltings, and rigidly controlled temperature processes in which the
temperature of the melt is held within one or two degrees above the melting point of silicon. In the first
process, a silica container of such a small wall thickness will not support a melt greater than a few
grams, which imposes a drastic limitation on the purification of large quantities of silicon requiring
successive heating and cooling steps. In the second process, it is very diflicult and costly to maintain such
an extremely close temperature control and inherently requires very slow melting.

It is, therefore, an object of this invention to provide a novel process for the purification of silicon in
which relatively large quantities may be produced in a single operation. It is another object of this
invention to provide a process in which silicon in a silica container may be successively melted and
remelted without breaking the container during successive melting and cooling steps.

The objects of this invention are accomplished by a process comprising charging a container of thick-wall
silica of 3 mm. or greater in thickness with solid particles of high purity silicon. An inert gas, such as
argon, is introduced into the unoccupied space within the container to avoid undesired contamination,
and the charge is then heated in a furnace to melt the silicon. The application of heat to the molten
charge is then adjusted by movement of either the heating element or the crucible to allow progressive
solidification of the melt from the bottom upward; however, the temperature of the solidified portion is
always maintained above 1100 C. The progressive solidification is stopped while a portion of the melt
remains liquid. This liquid portion, containing the segregated impurities, is then removed from contact
with the solid mass. The application of heat is then readjusted to remelt the solid mass, and the
progressive solidification and removal of the liquid residue containing segregated impurities is repeated
as many times as desired. Upon completion of the cyclic melting steps the solid mass is allowed to cool
to room temperature, the inert atmosphere removed and the purified residual ingot is recovered.

Reference:

https://www.google.com/url?sa=i&url=https%3A%2F%2Fwww.thinglink.com%2Fscene
%2F835119433339895810&psig=AOvVaw1GPIDdaocZyAmLO3802foi&ust=1593601686685000&source
=images&cd=vfe&ved=0CA0QjhxqFwoTCOiPoeXTquoCFQAAAAAdAAAAABAk

https://patents.google.com/patent/US3012865A/en

https://www.researchgate.net/post/What_is_the_best_method_of_silicon_purification_Si#:~:text=D
ear%20Dr.,electronic%20devices%20and%20integrated%20circuits.

https://www.tutorialspoint.com/semiconductor_devices/doping_in_semiconductor_devices.htm