SOLID STATE DEVICES: DIODE
Aldover
SOLID STATE DEVICES
Operates by virtue of the movement of
electrons with solid piece of semiconductor
material
PN JUNCTIONS
When p-type and n-type materials are
joined this forms a pn junction. Majority charge
carriers on each side diffuse across the junction
where they combine with (and remove) charge
carriers of the opposite polarity hence around the
junction there are few free charge carriers and we
have a depletion layer (also called a space-charge
layer)
Potential barrier
The barrier opposes the flow of majority
charge carriers and only a small number have
enough energy to surmount it. This generates a
small diffusion current
The barrier encourages the flow of minority
carriers and any that come close to it will be swept
over this generates a small drift current
For an isolated junction these two currents
must balance each other and the net current is zero
DIODE
 P-n junction diode
 Allows electric current go through only
when it is positively biased.
BIASING THE DIODE
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Engr. Arvin B.
 Bias refers to the use of a dc voltage to
establish a certain operating condition
for an electronic device.
Types:
1. Forward bias
2. Reverse bias
I. Forward bias
 if the p-type side is made positive with
respect to the
n-type side the height of the barrier is
reduced
 more majority charge carriers have
sufficient energy to surmount it
 the diffusion current therefore increases
while the drift current remains the same
 there is thus a net current flow across the
junction which increases with the applied
voltage
II. Reverse bias
 if the p-type side is made negative with
respect to the
n-type side the height of the barrier is
increased
 the number of majority charge carriers
that have sufficient energy to surmount
it rapidly decreases
 the diffusion current therefore vanishes
while the drift current remains the
same
SOLID STATE DEVICES: DIODE Engr. Arvin B. Aldover

 thus the only current is a small leakage The transconductance curve is

current caused by the (approximately characterized by the following equation:
constant) drift current V /V
 the leakage current is usually negligible I = I (e D T – 1)
D S
(a few nA)
The equation to find V at various temperatures
T
is:
V = kT/q
T
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k = 1.38 x 10 J/K T = temperature in
-19
Kelvin q = 1.6 x 10 C

Determine the diode current at 100 degree C for

silicon diode with Is = 5 uA, and an applied
BREAKDOWN VOLTAGE
forward bias of 0.6 V. (n=2)
 The maximum voltage the junction diode
can handle when reverse biased.
DIODE EQUIVALENT CIRCUIT
 Also known as PEAK REVERSE
 Ideal diode model
VOLTAGE (PRV) OR PEAK INVERSE
 Simplified diode model
VOLTAGE (PIV)
 Piecewise-linear diode model

1. Ideal Model
The diode is assumed to a zero threshold
voltage and has no resistance when forward
bias.

DIODE CHARACTERISTIC CURVE

2. Simplified diode model

The diode is assumed to have a threshold
voltage but no resistance.

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SOLID STATE DEVICES: DIODE Engr. Arvin B. Aldover

3. Piecewise- linear diode model

The diode has threshold voltage, Vth and
forward resistance.

DIODE RESISTANCE
1. Dc or static resistance
2. Ac or dynamic resistance
3. Average ac resistance

1. Dc or static resistance
Dc or static resistance is the forward
resistance of the diode when in dc circuit
analysis.

DIODE APPROXIMATION CURVES

When are the different diode
approximations used.
- 1st Approximation
2. Ac or dynamic resistance In troubleshooting to determine if diode is
Ac or dynamic resistance of the diode when in conducting or not?
ac circuit analysis.
- 2nd Approximation
More accurate method of determining
load current and voltage
- 3rd Approximation
Original design of diode circuits

3. Average ac resistance
Average ac resistance is the forward resistance
of the diode in ac circuit analysis.
DIODE DESTRUCTION
Diode breakdown occurs when either end
of the depletion region approaches its
electrical contact, the applied voltage has
become high enough to generate an
electrical arc straight through the crystal.
This will destroy the diode.

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SOLID STATE DEVICES: DIODE Engr. Arvin B. Aldover

Series Diode Configurations

LOAD LINE ANALYSIS
Series diode configuration (a) circuit (b) For the series diode configuration
characteristics shown below, determine Vd, Vr, and Id.
(Solve Vd, Vr, and Id also if the diode (a) is
reversed (b) E is changed to 0.5 V).

Parallel Diode Configurations

Determine Vo, I1, ID1, and ID2 for the
parallel circuit below.

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