“We are just an advanced breed of monkeys on a

minor planet of a very average star. But we can

understand the Universe. That makes us something
very special.”
- Stephen Hawking.
FinFET Architecture Analysis and
Fabrication Mechanism
M.A.Qadeer
Department of Electronics
and Communication
Mahatma Gandhi Institute of
Technology

Sai Sujith
Seelam
Department of Electronics
and Communication
Mahatma Gandhi Institute of
 Topics

 Introduction
 Why FinFET??????
 Evaluation and comparison of FinFET
technology.
 What are FinFET’s???
 Structure & Architecture Analysis
 Recent FinFET Development
 Fabrication Mechanism
 Advantages and Limitations of FinFET
circuit design tradeoff’s
 Applications of FinFET Technology
The term “FINFET”
describes a non-planar,
double gate transistor built
on an SOI substrate,
based on the single gate
transistor design.
The important
characteristics of FINFET is
that the conducting
channel is wrapped by a
thin Si “fin”, which forms
the body of the device.
The thickness of the fin
determines the effective
channel length of the
device.
To summarize, in FinFET due to dual gate
structure it has better controlling over
several short channel effect such as VT
roll off, DIBL, subthreshold swing, gate
direct tunnelling leakage and hot carrier
effects compare to the planner MOSFET
FinFET has higher integration density
compare to the planner MOSFET. Also
fabrication of the FinFET is easiest
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“FinFET Process Refinements for Improved for Mobility and Gate
Work Function Engineering,” pp. 259-262, in IEDM Tech., 2002.
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[4] Bin Yu, Leland Chang*, Shelby Ahmed, Haiphong Wang, Scott
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