POWER DIODES

1. Power diode are similar to _________.

a) high power PN junction diode
b) PN junction diode
c) low power PN junction diode

2. Power diode is also called __________

a) PN junction diode
b) signal diode
c) gunn diode
d)schottky diodes

3. Power diode consist of n layer and is called as __________

a) cathode
b) anode
c) drift region
d) depletion region

1. An ideal power diode must have

a) low forward current carrying capacity
b) large reverse breakdown voltage
c) high ohmic junction resistance
d) high reverse recovery time

1. To make a signal diode suitable for high current & high voltage carrying
applications with minimum losses, ________
a) a lightly doped n layer is grown between the two p & n layers
b) a heavily doped n layer is grown between the two p & n layers
c) a lightly doped p layer is grown between the two p & n layers
d) a heavily doped p layer is grown between the two p & n layers

2.  Power diode is __________

a) a three terminal semiconductor device
b) a two terminal semiconductor device
c) a four terminal semiconductor device
d) a three terminal analog device
3. The V-I Characteristics of the diode lie in the
a) 1st & 2nd quadrant
b) 1st & 3rd quadrant
c) 1st & 4th quadrant
d) Only in the 1st quadrant

4.  Which of the following is true in case of a power diode with R load?

a) I grows almost linearly with V
b) I decays almost linearly with V
c) I is independent of V
d) I initial grows than decays

5. A diode is said to be reversed biased when the

a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) cathode is negative with respect to the anode
d) both cathode & anode are negative

6. A diode is said to be forward biased when the

a) cathode is positive with respect to the anode
b) anode is positive with respect to the cathode
c) anode is negative with respect to the anode
d) both cathode & anode are positive

7. In case of an ideal power diode, the leakage current flows from

a) anode to cathode
b) cathode to anode
c) in both the directions
d) leakage current does not flow

8. From Vs to cut-in voltage ,forward diode current is very small ,therefore cut-in
voltage is also know as
a) threshold voltage
b) breakover voltage
c) breakdown voltage
d) turn-off voltage
9. A small reverse current in the reverse biased condition is called __________
a) anode current
b) forward current
c) leakage current
d) holding current

10. A diode is turned on in the reversed direction ,when ___________ is reached

a) breakdown voltage
b) peak reverse voltage
c) breakover voltage
d) cut-in voltage

11. The reverse avalanche breakdown of a diode is avoided by operating the

____________
a) peak reverse voltage
b) turn-off voltage
c) leakage current
d) peak repetitive reverse voltage VRRM

12. Peak inverse voltage is the ___________

a) smallest forward voltage
b) largest forward voltage
c) largest reverse voltage
d) smallest reverse voltage

13. Power diode are now available with forward current ratings of ___________
a) 1A to several thousand amp
b) 10A to 500A
c) microamp to milliamp
d) milliamps to 10A

14. Reverse voltage ratings of a power diode are ____________

a) millivolt to 10v
b) 1v to 1000v
c) 10v to 3000v
d) 50v to 3000v
15. The peak inverse current IP for a power diode is given by the expression
a) IP=t + di/dt
b) IP=t * log ⁡i
c) IP=t * di/dt
d) IP=t * ∫ t*i dt

16. A power diode with small softness factor (S-factor) has

a) small oscillatory over voltages
b) large oscillatory over voltages
c) large peak reverse current
d) small peak reverse current

17. If V & I are the forward voltage & current respectively, then the power loss across
the diode would be
a) V/I
b) V2 I2
c) I2 V
d) VI

18. The power loss in which of the following cases would be the maximum?
a) When both V & I are minimum
b) When both V & I are maximum
c) When only V is maximum
d) When only I is maximum

19. Even after the forward current reduces to zero value, a practical diode continues
to conduct in the reverse direction for a while due to the
a) resistance of the diode
b) high junction temperature
c) stored charges in the depletion region
d) none of the mentioned

20.  For a p-n junction diode, the peak inverse current & the reverse recovery time
are dependent on
a) inverse voltage
b) forward Voltage
c) di/dt
d) all of the above mentioned
21. In an AC-DC converter, a diode might be used as a
a) voltage source
b) phase angle controller
c) freewheeling Diode
d) filter

22. When the p-n junction diode is forward biased, the width of the depletion region
__________
a) increases
b) decreases
c) remains Constant
d) increases than Decreases

23. When the p-n junction diode is reversed biased, the width of the depletion region
__________
a) increases
b) decreases
c) remains Constant
d) none of the above mentioned

24.  In case of a practical p-n junction diode, the rise in the junction temperature
___________
a) decreases the width of the depletion region
b) increases the barrier potential
c) increases the width of the depletion region
d) width of the depletion region increases but the barrier potential remains
constant

25. In the equilibrium state, the barrier potential across an unbiased silicon diode is
_________
a) 0.3 V
b) 0.7 V
c) 1.3 V
d) 0 V
26. In the equilibrium state the barrier, potential across an unbiased germanium
diode is __________
a) 0.3 V
b) 0.7 V
c) 1.7 V
d) 0 V

27. Forward recovery voltage appears due to higher ohmic drop in the
______________ region of a power diode in the beginning of the Turn On
process.
a) Drift
b) Drain
c) Leakage
d) Forward

28. The magnitude of the forward recovery voltage is typically of the order of few
______________ of volts.
a) Tens
b) Hundreds
c) Thousands
d) Lakhs

29. The magnitude of the forward recovery voltage also depends on the
_______________ of the diode forward current.
a) Rate of drain
b) Rate of rise
c) Rate of current
d) Rate of leakage

30. The reverse recovery charge of a power diode increases with the
_______________ of the diode forward current.
a) Angle
b) Phase
c) Magnitude
d) None of the above

31. For a given forward current the reverse recovery current of a Power Diode
______________ with the rate of decrease of the forward current.
a) Increases
b) Decreases
c) Remain constant
d) None of the above
32. For a given forward current the reverse recovery time of a Power diode
______________ with the rate of decrease of the forward current.
a) Increases
b) Decreases
c) Remain constant
d) None of the above

33. A “snappy” recovery diode is subjected to _________________ voltage over

shoot on recovery.
a) Small
b) Minimum
c) Large
d) Maximum

34. A fast recovery diode has _______________________ reverse recovery current

and time compared to a __________________ recovery diode.
a) Smaller
b) Lower
c) None of the above

35. A Schottky diode has _______________ forward voltage drop and

______________ reverse voltage blocking capacity.
a) High, Law
b) Low, Law
c) Maximum, Low
d) Minimum, High

36. Schottky diodes have no __________________ transient and very little

_________________ transient.
a) Turn on, Turn on
b) Turn on, Turn off
c) Turn off, Turn on
d) Turn off, Turn off

37. The i-v characteristics of a power diode for large forward current is __________ .
a) Non-linear
b) linear
c) decreased
d) linear
38. The width of the space charge region increases as the applied
______________ voltage increases.
a) forward
b) Reverse
c) breakover
d) no voltage is required

39. The maximum electric field strength at the center of the depletion layer increases
with _______________ in the reverse voltage.
a) increase
b) decrease
c) cut off region
d) no increase

40. Reverse saturation current in a power diode is extremely sensitive to

___________ variation.
a) surrounding
b) power
c) temperature
d) current

41. Donor atoms are _____________________ carrier providers in the p type and
_________________ carrier providers in the n type semiconductor materials.
a) majority, miniority
b) Minority Majority
c) both are majority carriers
d) both are minority carriers

42. Forward current density in a diode is __________________________

proportional to the life time of carriers.
a) uniformly
b) inversely
c) non-uniformly
d) directly