VELS VIDYASHRAM

PALLAVARAM

PHYSICS INVESTIGATORY PROJECT

PNP TRANSISTERS

2022-23

NAME: SHANMUGASUNDARAM.V
CLASS: XII B
ROLL NUMBER:
 CERTIFICATE

This is to certify that of

class XII B has completed the physics
project titled "PNP TRANSISTORS”
SECONDARY EDUCATION (CBSE). This
project was carried out in the physics
laboratory of Vels Vidyashram Sr. Sec.
School during the academic year 2022-
2023.

SIGN:-

INTERNAL EXAMINER:-

EXTERNAL EXAMINER:-
 ACKNOWLEDGEMENT

I would like to thank my physics teacher

Mrs.Sowmiya for her constant guidance,
motivation, moral encouragement and
sympathetic attitude towards the success
of this project. I also want to thank the
principal and the institution for providing
the necessary materials.

I would like to thank my friend

who supported me all throughout the
project. It benefited me to increase my
knowledge and fun learning
 Introduction
 The PNP transistor is a type of bipolar transistor
used for amplification and switching purpose and
for the designing of the complementary output
stage in combination with NPN transistor.
 It comes with three terminals called emitter, base,
and collector where small current at the base
terminal is used to control large current at other
terminals.
 It is a current controlled device also known
as sinking device where it sinks current into its base
terminal and current flows out of the collector.
 Unlike NPN transistor, current flows from the
emitter to collector in this PNP transistor and holes
act as a majority charge carriers.
 This transistor comes with same characteristics as
NPN transistor but there are some exceptions. In
case of PNP transistor, all voltage polarities and
current directions will be reversed as compared to
NPN transistor. The PNP transistor sinks current
into its base while NPN transistor sources current
through its base terminal.
 Both NPN and PNP transistors are current
controlled devices where conduction is carried out
by both charge carriers i.e. electrons and holes, but
major charge carriers are electrons in case of NPN
 transistors. While in case of PNP transistor major
charge carriers are holes.
 The PNP transistor is like a combination
of diodes combined back to back from cathode
sides.

Transistor
A junction diode which is used for
amplification is known as transistor.
There are three section of transistor.
i) Emitter (F)
ii) Base (B)
iii) Collector (C)
The base (B) of a transistor is made thin and it
is doped lightly. The
Emitter (E) supplies the majority carriers for
current flow and collector (C)
Collect them
When a transistor is used in a circuit the base-
emitter junction is always
Forward biased and base-collector junction is
reverse biased.
Types of Transistor
Transistors are of two types
1) p-n-p transistor
id) n-p-n transistor
i) p-n-p transistor is formed when -section is switched
between two p-
Sections.
ii) n-p-n transistor is formed when p-section is
switched between two n-
sections.
Action of PNP transistor: The action of both the types
of transistors i.e.NPN and PNP is similar except that the
majority and minority carriers in the two cases are of
opposite nature

The functional difference between a PNP transistor and

an NPN transistor is the proper biasing (polarity) of the
junctions When operating. For any given state of
operation, the current. Directions and voltage
polarities for each kind of transistor are exactly
opposite each other. Bipolar transistors work as
current-controlled. Current regulators. In other words,
transistors restrict the amount of current passed
according to a smaller, controlling current. The main
current that is controlled goes from collector to
emitter, or from emitter to collector, depending on the
type of transistor it is (PNP or NPN, respectively). The
small current that controls the main current goes from
base to emitter, or from emitter to base, once again
depending on the kind of transistor it is (PNP or NPN,
respectively). According to the standards of
semiconductor symbology, the arrow always points
against the direction of electron flow. (Figure below)

Experiment
AIM: To study and perform Transistor as a switch AND
AMPLIFIER.
APPARATUS: Transistor BC547, resistors, DC Power
supply, Function, Generator, Connecting Wire Pieces,
Breadboard, Preset: 10 K 92, LED.
THEORY: In common emitter circuit of a transistor,
emitter
base make input section and is forward biased and
emitter collector junction make output section and is
reverse biased.
The variation in the output voltage w.r.t. the variation
in
Input voltage for a transistor are shown in figure.
The amount of amplification is decided by the B (beta)
of the
transistor.
ß=hfe=Ic/IB
Where,
•IC is the collector current.
• I is the base current.
B is an intrinsic property of the transistor. Different
Transistors have different betas.

Circuit diagram
For this, experiment we will use the transistors in the
common-emitter configuration. The input signal is
applied
between the base and emitter, and the output is taken
from
the collector and emitter.

Circuit explanation:
1. In this circuit two same-coloured LEDs are used so
that the
effect of amplification can be clearly seen.
2. The emitter of the transistor is grounded.
3. A preset (10 k92) is used in the circuit. It is used as a
voltage divider to apply different voltages at the base.
To
use preset as a voltage divider, either of the side
terminals is given Vcc and the other ground.
4. The middle terminal of the preset is connected in
series
with the positive terminal of LED1. The negative
terminal
of LED is connected in series with a resistor R1 (330
S2).
The other end of the resistor is connected to the base
of
the transistor.
5. One end of resistor, Rz (330 S2) is connected to the
collector. The other end of the corresponding resistor
is connected to the negative terminal of LED2.
6. The positive terminal of LED2 is connected to Vcc.

Procedure:
1. Make the circuit diagram (on breadboard, if
possible).
2. Make all connections neat, clean and tight.
3. Now, set a particular input voltage (Vi) using the
preset,
and measure it. Also, measure the voltages at the base
(VB) and collector (Vc) and compare them.
4. Measure the base current (I) and the collector
current
(Ic) and verify the amplification factor.
5. Now, rotate the preset to a position, where both the
LEDs
glow brightly. At this position, measure the input
voltage
(Vi) at the middle terminal of the preset. Also, measure
the voltages at the base (VB) and collector (Vc) and
compare them.
6. Again, measure the base current (VB) and the
collector
(Vc) current and verify the amplification factor.

Observation:
1. For the first reading :-
• VI=
• VR=
• Vc=
•I=
•Ic=
Calculation:
Conclusion:
• For the first readings, V is less than the collector
voltage Vc. Since the base voltage is less than the
collector voltage, we can say that the base - collector
junction is reverse biased. This is a necessary condition
for the transistor to be in the active region. The value
of B (hFE) for this transistor should be between
100 - 400. The calculated value, 358, lies in this range.
This means that the transistor is in the active region.
• So, in the active region, the transistor acts as an
amplifier as long as the base - emitter junction is
forward biased and the base - collector junction is
reverse biased.
• Now, for the second reading, on comparing the base
and the collector voltages, we can see that the base
voltage V is more than the collector voltage Vc. Since
the base voltage is more than the collector voltage, we
can say that the base - collector junction is forward
biased. This is a necessary condition for the transistor
to be in the saturation region.
Also, the collector voltage is close to zero volt
(ground).
• The value of B (hFE), 1.3, is less than the ideal gain
(100) of a transistor. This means, the transistor does
not act as an amplifier in this case, it acts like a
switch. In the saturation region, the collector - emitter
voltage VcE is reduced to almost 0 V. We can see that
the value of the collector voltage with respect to the
emitter (ground) is 0.03 V. The collector and emitter
act as two terminals of the switch, which get nearly
shorted.
RESULT
• In the active region, the transistor acts as an amplifier
as long as the base - emitter junction is forward biased
and the base - collector junction is reverse biased.
• A transistor gets saturated when its base - emitter
junction and base - collector junction are forward
biased. In saturation, the potential difference
between the emitter and the collector is
approximately equal to zero volt.
This voltage across the collector - emitter junction is
called the collector - emitter saturation voltaqe. The
value of the saturation region for the PNP transistor in
my project is around 0.25 - 0.6 V.
precaution:
1. All connections should be neat, clean and tight.
2. The input voltage should be increases gradually.
3. Don't connect the terminals of the battery to each
other.
Sources of error
• The transistor may be faulty.

bibliography
• Guidance from Teacher
• NCERT Class 12 Physics Book
• Comprehensive Physics Practical Book
www.cooljunk.in/physics-project-kit
•www.google.com