Question:1

What are the bias conditions of the base-emitter and the base collector
junctions for a transistor in linear (active) and cutoff conditions?

Answer:

Transistor Operating Conditions:

When the emitter junction is in forward biased and the collector junction is
in reverse bias, then it is said to be in the active region. The transistor has
two junctions which can be biased in different ways. The different working
conduction of the transistor is shown in the table below.

Conditio Emitter Junction Collector Junction Region of

n (EB) (CB) Operation

FR Forward-biased Reversed-biased Active

FF Forward-biased Forward-biased Saturation

RR Reversed-biased Reversed-biased Cut-off

RF Reversed-biased Forward-biased Inverted

 FR – In this case, the emitter-base junction is connected in forward

biased and the collector-base junction is connected in reverse biased.
The transistor is in the active region and the collector current is depend
on the emitter current. The transistor, which operates in this region is
used for amplification.
 FF – In this condition, both the junction is in forward biased. The
transistor is in saturation and the collector current becomes independent
of the base current. The transistors act like a closed switch.
 RR – Both the currents are in reverse biased. The emitter does not
supply the majority charge carrier to the base and carriers current are not
collected by the collector. Thus, transistors act like a closed switch.
  RF – The emitter-base junction is in reverse bias and the collector-
base junction is kept in forward biased. As the collector is lightly doped
as compared to the emitter junction it does not supply the majority
charge carrier to the base. Hence poor transistor action is achieved.

Question:2

Explain the complete operation of a transistor?

Answer:

Transistor:
Definition: The transistor is a semiconductor device which transfers a weak signal
from low resistance circuit to high resistance circuit. In other words, it is a switching
device which regulates and amplify the electrical signal likes voltage or current.

The transistor consists two PN diode connected back-to-back. It has three terminals
namely emitter, base and collector. The base is the middle section which is made up of
thin layers. The right part of the diode is called emitter diode and the left part is called
collector-base diode. These names are given as per the common terminal of the
transistor. The emitter- based junction of the transistor is connected to forward biased
and the collector-base junction is connected in reverse bias which offers a high
resistance.

Transistor Symbols:
There are two types of transistor, namely NPN transistor and PNP transistor. The
transistor which has two blocks of n-type semiconductor material and one block of P-
type semiconductor material is known as NPN transistor. Similarly, if the material has
one layer of N-type material and two layers of P-type material then it is called PNP
transistor. The symbol of NPN and PNP is shown in the figure below.
The arrow in the symbol indicates the direction of flow of conventional current in the
emitter with forward biasing applied to the emitter-base junction. The only difference
between the NPN and PNP transistor is in the direction of the current.

Transistor Terminals
The transistor has three terminals namely, emitter, collector and base. The terminals of
the diode are explained below in details.

Emitter – The section that supplies the large section of majority charge carrier is called
emitter. The emitter is always connected in forward biased with respect to the base so
that it supplies the majority charge carrier to the base. The emitter-base junction injects
a large amount of majority charge carrier into the base because it is heavily doped and
moderate in size.

Collector – The section which collects the major portion of the majority charge carrier
supplied by the emitter is called a collector. The collector-base junction is always in
reverse bias. Its main function is to remove the majority charges from its junction with
the base. The collector section of the transistor is moderately doped, but larger in size
so that it can collect most of the charge carrier supplied by the emitter.

Base – The middle section of the transistor is known as the base. The base forms two
circuits, the input circuit with the emitter and the output circuit with the collector. The
emitter-base circuit is in forward biased and offered the low resistance to the circuit. The
collector-base junction is in reverse bias and offers the higher resistance to the circuit.
The base of the transistor is lightly doped and very thin due to which it offers the
majority charge carrier to the base.

NPN Bipolar Junction Transistor

A NPN Bipolar Junction Transistor has a P-doped semiconductor base in between an N-
doped emitter and N-doped collector region. NPN bipolar transistors are the highest
used bipolar transistors due to the ease of electron mobility over electron hole mobility.
For this type of transistor, large magnitude collector and emitter currents get produced
through the amplification of a small current which enters through the base. This small
current only gets amplified when the transistor becomes active. In this active state, a
positive potential difference is found between both the base region to the collector
region and the emitter region to the base region which results in current that gets
carried by electrons, between the collector and emitter regions. The construction and
terminal voltages for a NPN Transistor are shown in Figure 1 below.

Figure 11: NPN Transistor schematic.

For a bipolar NPN transistor to conduct the Collector is always more positive with
respect to both the Base and the Emitter. The voltage between the Base and Emitter
( VBE ), is positive at the Base and negative at the Emitter. The Base terminal is always
positive with respect to the Emitter. Another way to display a NPN Transistor is shown
in Figure 2 below.

Figure 2 NPN Bipolar Transistor circuit.

The current flowing out of the transistor must be equal to the currents flowing into the
transistor as the emitter current is given :Ie = Ic + Ib. (1)

Note: “Ic” is the current flowing into the collector terminal, “Ib” is the current flowing
into the base terminal and “Ie” is the current flowing out of the emitter terminal.
Since the physical construction of the transistor determines the electrical relationship
between these three currents, (Ib), (Ic) and (Ie), any small change in the base current
( Ib ), will result in a much larger change in the collector current ( Ic ). The ratio of the
collector current to the emitter current is called Alpha (α).

Alpha (α) = Ic/Ie (2)

The current gain of the transistor from the Collector terminal to the Emitter terminal,
Ic/Ie, is a function of the electrons diffusing across the junction. The current gain of the
transistor from the Collector terminal to the Base terminal is signified by Beta, ( β ).

Beta ( β ) = Ic/Ib (3)

NPN transistors are good amplifying devices when the Beta value is large. Beta values
normally range between 20 and 200 for most general purpose transistors. Therefore if a
transistor has a Beta value of 50, then for every 50 electrons flowing between the
emitter-collector terminals one electron will flow from the base terminal.

By combining the expressions for both Alpha, α and Beta, β the current gain of the
transistor can be given as:

Beta= (α)/(1-α) (4)

As seen from the equations above, electron mobility between the Collector and Emitter
circuits is the only link between these two circuits. This link is the main feature of
transistor action. Since transistor action is constituted by initial electron movement
through the base region, the amplifying properties of the transistor comes from the
consequent control the Base exerts on the current between the Collector and Emitter.
As long as the flow of the biasing current into the base terminal is steady, the base
region can be treated as a current control input.

PNP Bipolar Junction Transistor

A PNP Bipolar Junction Transistor has an N-doped semiconductor base in between a P-

doped emitter and P-doped collector region. The PNP Transistor has very similar
characteristics to the NPN Transistor, with the difference being the biasing of the
current and voltage directions are reversed. For PNP Transistors, current enters into the
transistor through the emitter terminal. A small current leaving the base is amplified in
the collector output. The emitter-base region is forward biased so electric field and
carriers will be generated. The voltage sources are connected to a PNP transistor are as
shown in Figure 3 and Figure 4 below.
  

Figure 3 PNP transistor schematic Figure 4 PNP Transistor circuit

The voltage between the Base and Emitter ( V BE ), is now negative at the Base and
positive at the Emitter. The Base terminal is always biased negative with respect to the
Emitter while. The Emitter is positive with respect to the Collector ( V CE ). The reverse
biased collector base part has generated holes. Due to the electric field, carriers or
electrons get pulled by the holes. For a PNP transistor to conduct, the Emitter is always
more positive with respect to both the Base and the Collector.

Working of Transistor:
Usually, silicon is used for making the transistor because of their high voltage rating,
greater current and less temperature sensitivity. The emitter-base section kept in
forward biased constitutes the base current which flows through the base region. The
magnitude of the base current is very small. The base current causes the electrons to
move into the collector region or create a hole in the base region.

The base of the transistor is very thin and lightly doped because of which its less
number of electrons as compared to the emitter. The few electrons of the emitter are
combined with the hole of the base region and the remaining electrons are moved
towards the collector region and constitute the collector current. Thus, we can say that
the large collector current is obtained by varying the base region.