Lecturer: Yohannes Bekuma Chapter one: Diodes Department: ECE

Equation of the static characteristic:

The volt-ampere characteristics described recently are called static characteristics because
they describe the d.c. behavior of the diode. The forward and reverse characteristics have
been combined into a single diagram as shown below:

The characteristics can be described by the analytical called Boltzmann diode equation
given as below:
eV
I = Io (e ƞ KT −1 ) (Ampere)

Where:

Io = Diode reverse saturation current

V= Voltage across junction (positive for forward biased and negative for
reverse biased).
K= Boltzmann constant= 1.38 * 10-23 J/oK
T= Crystal temperature in oK
Et Ƞ=1 For germanium
a =2 For silicon

Microelectronic Devices and electrical circuits

Lecturer: Yohannes Bekuma Chapter one: Diodes Department: ECE
Hence, the above diode equation becomes:
eV
I = Io (e KT −1) for germanium
eV
I = Io (e 2 KT −1) for silicon
Now, e/K = 11600
11600V
I = Io (e ƞT
−1)

and putting T/11600 = VT, the above equation may be written as:
V
I = Io (e ƞ V −1)T

Now, at room temperature of (273 + 20) = 293 oK , VT = 293/ 11600 = 0.025 V = 25 mV.

Substituting the value of ƞ, we have

I = Io (e 40 V −1) for germanium

= Io (e 40 V ) when v > 1 volt
I = Io (e 20 V −1) for silicon
= Io (e 20 V ) when v > 1 volt
We may also write the above diode equation as under:
Vf
I = Io (e ƞ V −1)T forward bias
VR
I = Io (e ƞ V −1)T reverse bias

Diode parameter:
1- Bulk resistance (rB)

It is the sum of the resistance values of the P- and N-

type semiconductor materials of which the diode
made of.

rB = rP + rN

Usually, it is very small, and given by:

(V F – V B) Where: VB is barrier potential
rB = IF

Microelectronic Devices and electrical circuits

Lecturer: Yohannes Bekuma Chapter one: Diodes Department: ECE
It is the resistance offered by the diode well above the barrier voltage i.e when current is
large. Obviously, this resistance is offered in the forward direction.

2-Junction resistance (rj or rd)

It is also known as incremental or dynamic resistance and is an important

parameter particularly in connection with small signal operations of the diode. Its value for
forward-bias junction depends on the magnitude of forward dc current.

rj = dV/dI or gj = dI/dV
V
Now, I = Io (e ƞ V −1) T

V
= I o eƞ V T
−I o

dI
So, gj = dV
V
ƞVT
= I oe
ƞVT

I +Io
= ƞVT

ƞVT
rj = I + I
o

rj = 25 (mV) / IF (mA) for Ge

= 50 (mV) / IF (mA) for Si

Obviously, it is a variable resistance.

3- Dynamic or ac resistance:

rac or rd = rB + rj

Note that, for large values of forward current, rj is negligible. Hence rac = rB . For small
values of IF, rB is negligible as compared to rj . Hence rac = rj.

4- Forward voltage drop

It is given by the relation:

Microelectronic Devices and electrical circuits

Lecturer: Yohannes Bekuma Chapter one: Diodes Department: ECE
power disspated
Forward voltage drop = forward dc current

5- Reverse dc resistance
reverse volatge
RR = reverse current

Microelectronic Devices and electrical circuits

Lecturer: Yohannes Bekuma Chapter one: Diodes Department: ECE

Microelectronic Devices and electrical circuits