Charge carriers crossing the junction

The p-n Junction in which no external voltage is applied is called unbiased p-n junction.
Due to this higher concentration of electrons at n-side, they try to move towards the low concentration
region. Each free electron that is crossing the junction from n-side to fill the hole in p-side atom creates
a negative ion at p-side. Similarly, each free electron that left the parent atom at n-side to fill the hole in
p-side atom creates a positive ion at n-side.

Thus, immobile positive charge at n-side and immobile negative charge at p-side near the junction acts
like a barrier or wall and prevent the further flow of free electrons and holes. The region near the
junction where flow of charges carriers are decreased over a given time and finally results in empty
charge carriers is called depletion region.
Depletion width: P-type and n-type semiconductors is heavily doped
In heavily doped semiconductors, recombination rate is very fast because of large number of charge
carriers. The free electrons fill the holes in the positive ions at n-side before they cross the p-n junction.
The positive ion, which gains the electron, becomes a neutral atom. Similarly, the holes occupy the
electron place in the negative ion before they cross the p-n junction. The negative ion, which loses the
free electron, becomes a neutral atom.
Hence, the positive ions at n-side and negative ions at p-side are decreased over a given period. This
decreases the width of depletion region.
Depletion width: P-type and n-type semiconductors is lightly doped
In the lightly doped semiconductors, the recombination rate is very slow. Hence, the free electrons
from n-side cross the junction and fill the holes in the atoms at p-side before they recombine with the
positive ions at n-side. The atom, which gains an extra electron at p-side, becomes a negative ion.
Similarly, the holes from p-side cross the junction and occupy the electrons place at n-side before they
recombine with the negative ions at p-side. The atom, which loses the valence electron at n-side,
becomes a positive ion.
Hence, the positive ions at n-side and the negative ions at p-side are increased over a given period.
This increases the width of depletion region.
P-N junction semiconductor diode
The process of applying the external voltage to a p-n junction semiconductor diode is called biasing.
External voltage to the p-n junction diode is applied in any of the two methods: forward biasing or
reverse biasing.

Forward biased p-n junction diode

Under unbiased condition, the p-n junction diode does not allow the electric current.
The process by which, a p-n junction diode allows the electric current in the presence
of applied voltage is called forward biased p-n junction diode.

Electron and hole current

• Electron current
Due to the large number of free electrons at n-type semiconductor, they get repelled from each other
and try to move from (n-type semiconductor) to (p-type semiconductor). However, before crossing the
depletion region, free electrons finds the positive ions and fills the holes becoming valence electrons.
Thus, the free electrons are disappeared. The positive ions, which gain the electrons, become neutral
atoms. Thus, the depletion region (positive electric field) at n-type semiconductor near the p-n junction
decreases until it disappears.
The remaining free electrons crossing the depletion region finds the large number of holes or
vacancies in the p-type semiconductor and fills them with electrons. These free electrons will becomes
valence electrons and get attracted towards the positive terminal of battery or terminates at the
positive terminal of battery. Thus, (free electrons) that are crossing the depletion region carry the
electric current from one point to another point in the p-n junction diode.
• Hole current
The positive terminal of the battery supplies large number of holes to the p-type semiconductor and
attracts large number of free electrons from the n-type semiconductor.
Due to the large number of (holes) at p-type semiconductor, they get repelled from each other and try
to move from (p-type semiconductor) to (n-type semiconductor). However, before crossing the
depletion region, some of the holes finds the negative ions and replaces the electrons position with
holes. Thus, the holes are disappeared. The negative ions, which lose the electrons, become neutral
atoms. Thus, the negative ions at p-type semiconductor near the p-n junction decreases until it
disappears.
The remaining holes will cross the depletion region and attracted to the negative terminal of
battery. Thus, (holes) that are crossing the depletion region carry the electric current from one point to
another point in the p-n junction diode.
Reverse biased p-n junction diode
The process by which, a p-n junction diode blocks the electric current in the presence of
applied voltage is called reverse biased p-n junction diode.
In reverse biased p-n junction diode, the free electrons begin their journey at the negative terminal, find
large number of holes at the p-type semiconductor and fill them with electrons. The atom, which gains
an extra electron, becomes a negative ion. These negative ions at p-n junction (p-side) oppose the
flow of free electrons from n-side.

On the other hand, holes , which begin their journey at the positive terminal, find large of free electrons
at the n-type semiconductor and replace the electrons position with holes. The atom, which loses an
electron, becomes a charged atom or positive ion. These positive ions at p-n junction (n-side) oppose
the flow of positive charge carriers from p-side.
If the reverse biased voltage applied on the p-n junction diode is further increased, then even more
number of free electrons and holes are pulled away from the p-n junction. This increases the width
of depletion region. Hence, the width of the depletion region increases with increase in voltage. The
wide depletion region of the p-n junction diode completely blocks the majority charge carriers. Hence,
majority charge carriers cannot carry the electric current.
However, p-n junction diode allows the minority charge carriers. The positive terminal of the battery
pushes the holes (minority carriers) towards the p-type semiconductor. In the similar way, negative
terminal of the battery pushes the free electrons (minority carriers) towards the n-type semiconductor.
The positive charge carriers (holes) which cross the p-n junction are attracted towards the negative
terminal of the battery while the negative charge carriers (free electrons) which cross the p-n junction
are attracted towards the positive terminal of the battery. Thus, the minority charge carriers carry the
electric current in reverse biased p-n junction diode.
The electric current carried by the minority charge carriers is very small. Hence, minority carrier current
is considered as negligible.
Depletion region breakdown
The process by which a depletion region at the p-n junction is destroyed and allows a large reverse
current is called depletion region breakdown.
The depletion region breakdown or junction breakdown occurs in two different methods: zener
breakdown and avalanche breakdown.
Avalanche breakdown
The avalanche breakdown occurs in lightly doped p-n junction diodes with the wide depletion region.
Hence, it is not possible for the external voltage to destroy the depletion region directly. However, it
can destroy the depletion region with the help of minority carriers.
The generation of minority carriers in the reverse biased p-n junction diode depends only on the
temperature. However, the applied reverse voltage on the p-n junction diode supplies energy to the
minority carriers. The free electrons, which gain energy from the external voltage are accelerated to
greater velocities.
If the voltage applied to the p-n junction diode is further increased to a higher value, the free electrons
gain large amount of energy and travel at very high speed. When these high-speed free electrons
collide with the atoms, ions, or valence electrons, they transfer their kinetic energy to the valence
electrons. The valence electron, which gain enough energy from the high-speed free electron will
breaks the bonding with the parent atom and becomes a free electron. The point at which the free
electron left is called a hole. Thus, a free electron at the conduction band and a hole at the valence
band is generated as pair.
The newly generated free electron gains energy from the external voltage source and travel at high
speed. If this newly generated free electron collides with an atom or ion, another free electron and hole
is generated. Likewise, a large number of minority carriers are generated with the few free electrons.
This process is called carrier multiplication.
Thus, at high reverse voltage, large number of minority carriers is generated. This large number of
minority carriers causes sudden increase in reverse current, which leads to junction breakdown.
Zener breakdown
The zener breakdown occurs in the heavily doped p-n junction diodes with narrow depletion region
If reverse voltage is applied on the narrow depletion p-n junction diode, the immobile ions in the
depletion region gains energy from the external voltage. Hence, the electric field of the immobile ions
increases, then the overall electric field of the narrow depletion region increases
If the voltage applied on the p-n junction diode is increased to a higher value, a very strong electric
field is built in this narrow depletion region. This strong electric field applies force on the valence
electrons and pulls them from the valence band.
Thus, free electrons and holes are generated as pair. Likewise, a large number of minority carriers are
generated in the depletion region. At this point, a small increase in reverse voltage causes sudden rise
in reverse current, which destroys the depletion region or p-n junction.