PN JUNCTION DIODE

A pn junction diode is formed by combining a p-type semiconductor with n-type

semiconductor. The N region is called the cathode and the P region is called the anode of the
PN junction diode.
PN Junction at equilibrium.
At the instant of formation of PN junction, there are excess electrons on the n-side and excess
holes on the p-side. So when the two materials are brought together, the electrons from the n
side move to the p side and recombine with the holes, while similarly, holes move from p to n
side and recombine with the electrons. This movement of carriers from regions of higher
concentration to regions of lower concentration is called diffusion current. This diffusion
results in the formation of uncovered negative ions on the p-side and positive ions on the n-
side of the junction. This region of immobile ions at the junction is called the depletion
region or the space charge layer. Thus a potential difference is developed across the
depletion region and an electric field is formed directed from the n-side to the p-side. Due to
the electric field across the junction, minority carriers will flow across the junction. ie,
minority electrons will flow from P side to N side and minority holes will move from N side
to P side. This movement of minority carriers due the electric field across the junction is
called drift current. The diffusion current ( from P to N) and drift current ( from N to P) are
in opposite directions.
The junction potential acts as a barrier to the flow of majority carriers and the diffusion
current decreases. At the same time the drift current increases with increase in the built in
electric field. At some point both diffusion and drift currents become equal. Since the
direction of the two currents are opposite to each other, the net current flowing across the
junction will be zero and the diode is said to be at equilibrium.
At equilibrium, J diffusion =J drift

J diffusion −J drift =0

The potential existing across the depletion layer at equilibrium is called barrier or built-in
or contact potential. The barrier potential depends on the nature of semiconductor material.
Its value is 0.7V for silicon and 0.3V for germanium.
PN Junction under forward biased condition

A p-n junction diode is said to be forward biased if p-side is connected to positive terminal
of the battery and n-side to negative terminal. Free electrons repelled by the negative terminal
of the battery move towards the junction and neutralizes the positive ions on the depletion
layer. Holes are repelled by the positive terminal of the battery and move towards the
junction and neutralises the negative ions at the junction. Thus the potential and width of the
depletion layer is reduced. As a result, more majority carriers diffuse across the junction and
diffusion current increases. Since the potential across the depletion region decreases, the
electric field is also reduced. Hence the drift current decreases. Now there is a net flow of
current across the junction which is due to diffusion current.
The increase in current with the increase of applied voltage is indicated graphically by volt-
ampere characteristics. The diode permits the current flow only if external voltage overcomes
the barrier potential. The minimum voltage required for a p-n junction diode to conduct is
called its cut-in voltage (Vγ).
PN junction under reverse bias

Application of negative voltage to the p-side of p-n junction diode with respect to the n-side
is called reverse bias. The charge carriers are repelled away from the junction and width of
the depletion layer increases. Thus, practically no holes or electrons are left in the
neighbourhood of the p-n junction and diffusion current flow stops completely. A minute
current of the order of µA, due to the drift of minority carriers exist across the diode. The
thermally generated minority carriers are constant for a given temperature and
material and hence the reverse current remains constant irrespective of applied voltage.
The resulting current is referred to as reverse saturation current.

The total current in a diode ‘I’ is given by

V
(
I =I 0 e
ηVT
−1 )
I0 - reverse saturation current
V - applied potential
η - ideality factor
 kT
VT -volt equivalent of temperature (thermal voltage) ¿ (26mV at room temperature)
q
k - Boltzmann’s constant
T - Temperature in absolute scale
q - charge of electron

In Forward - biased condition, V = Vf >> VT

V
ηV T
I ≅I0 e

Here current varies exponentially with voltage

Under reverse - biased condition, V = -VR << VT

I =I 0 ( e0 −1 )=−I 0

The current remains almost constant.

A p-n junction permits current flow when forward biased and does not allow current flow
when reverse biased. ie, the conduction is unidirectional from p to n in the external circuit.