DATA SHEET

www.DataSheet4U.com

MOS FIELD EFFECT TRANSISTOR

2SK3919
SWITCHING
N-CHANNEL POWER MOS FET

DESCRIPTION ORDERING INFORMATION

The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE
features a low on-state resistance and excellent switching
2SK3919 TO-251 (MP-3)
characteristics, and designed for low voltage high current
2SK3919-ZK TO-252 (MP-3ZK)
applications such as DC/DC converter with synchronous
rectifier.

FEATURES (TO-251)
• Low on-state resistance
RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)
• Low Ciss: Ciss = 2050 pF TYP.
• 5 V drive available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

(TO-252)
Drain to Source Voltage (VGS = 0 V) VDSS 25 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±64 A
Note1
Drain Current (pulse) ID(pulse) ±256 A
Total Power Dissipation (TC = 25°C) PT1 36 W
Total Power Dissipation PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Note2
Single Avalanche Current IAS 27 A
Note2
Single Avalanche Energy EAS 73 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

Document No. D17078EJ4V0DS00 (4th edition)

Date Published January 2005 NS CP(K) The mark shows major revised points.
Printed in Japan
2004
www.DataSheet4U.com 2SK3919

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10 µA

Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.0 2.5 3.0 V

Note
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 16 A 9.7 19 S
Note
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 32 A 4.5 5.6 mΩ

RDS(on)2 VGS = 5.0 V, ID = 16 A 6.8 13.7 mΩ

Input Capacitance Ciss VDS = 10 V 2050 pF

Output Capacitance Coss VGS = 0 V 460 pF

Reverse Transfer Capacitance Crss f = 1 MHz 330 pF

Turn-on Delay Time td(on) VDD = 12.5 V, ID = 32 A 16 ns

Rise Time tr VGS = 10 V 19 ns

Turn-off Delay Time td(off) RG = 10 Ω 53 ns

Fall Time tf 22 ns

Total Gate Charge QG VDD = 20 V 42 nC

Gate to Source Charge QGS VGS = 10 V 8 nC

Gate to Drain Charge QGD ID = 64 A 15 nC

Note
Body Diode Forward Voltage VF(S-D) IF = 64 A, VGS = 0 V 0.97 V

Reverse Recovery Time trr IF = 64 A, VGS = 0 V 23 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 11 nC

Note Pulsed

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T. D.U.T. VGS

RG = 25 Ω L RL
VGS 90%
10% VGS
Wave Form
RG 0
PG. 50 Ω VDD PG.
VDD
VGS = 20 → 0 V VDS
90% 90%
VGS VDS
BVDSS 10% 10%
0 VDS 0
IAS Wave Form

ID VDS τ td(on) tr td(off) tf

VDD
τ = 1 µs ton toff
Duty Cycle ≤ 1%
Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

2 Data Sheet D17078EJ4V0DS

www.DataSheet4U.com 2SK3919

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
120 40
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

35
100
30
80
25

60 20
15
40
10
20
5

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC - Case Temperature - °C TC - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

1000
ID(pulse)

PW = 100 µs
ID - Drain Current - A

100 ID(DC)

RDS(on) Limited
10 (at VGS = 10 V)

Power Dissipation Limited 1 ms

1
10 ms
TC = 25°C
Single pulse
0.1
0.1 1 10 100
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000
rth(t) - Transient Thermal Resistance - °C/W

Rth(ch-A) = 125°C/W
100

10
Rth(ch-C) = 3.47°C/W

0.1

Single pulse
0.01
100 µ 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s

Data Sheet D17078EJ4V0DS 3

www.DataSheet4U.com 2SK3919

DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE
300 1000

250
100 Tch = −55°C
ID - Drain Current - A

ID - Drain Current - A
VGS = 10 V 25°C
200
75°C
10
125°C
150 150°C
1
100
5.0 V
50 0.1
VDS = 10 V
Pulsed Pulsed
0 0.01
0 0.5 1 1.5 2 2.5 0 1 2 3 4 5 6
VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

GATE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs.

CHANNEL TEMPERATURE DRAIN CURRENT
4 | yfs | - Forward Transfer Admittance - S 100
VDS = 10 V Tch = −55°C
VGS(off) - Gate Cut-off Voltage - V

ID = 1 mA 25°C
75°C
3
125°C
10 150°C

1
1
VDS = 10 V
Pulsed
0 0.1
-100 -50 0 50 100 150 200 0.1 1 10 100

Tch - Channel Temperature - °C ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ

RDS(on) - Drain to Source On-state Resistance - mΩ

15 15
Pulsed Pulsed

10 10
VGS = 5.0 V

ID = 32 A
5 5
10 V

0 0
1 10 100 1000 0 5 10 15 20
ID - Drain Current - A VGS - Gate to Source Voltage - V

4 Data Sheet D17078EJ4V0DS

www.DataSheet4U.com 2SK3919

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - mΩ

10 10000

Ciss, Coss, Crss - Capacitance - pF

8

Ciss
6 VGS = 10 V
1000
4
Coss

2 VGS = 0 V
ID = 32 A Crss
f = 1 MHz
Pulsed
0 100
-100 -50 0 50 100 150 200 0.01 0.1 1 10 100

Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V

SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000 30 12
VDS - Drain to Source Voltage - V ID = 64 A, 42 A (at VDD = 5 V)

VGS - Gate to Source Voltage - V

td(on), tr, td(off), tf - Switching Time - ns

25 10
VDD = 20 V
12.5 V
100 td(off) 20 8
5V
tf
td(on) 15 6
VGS
10 tr 10 4
VDD = 12.5 V
VGS = 10 V 5 2
VDS
RG = 10 Ω
1 0 0
0.1 1 10 100 0 20 40
ID - Drain Current - A QG - Gate Charge - nC

SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT
1000 1000
di/dt = 100 A/µs
VGS = 10 V
trr - Reverse Recovery Time - ns

VGS = 0 V
IF - Diode Forward Current - A

100

100
10 0V

1
10

0.1

Pulsed
0.01 1
0 0.5 1 1.5 1 10 100
VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A

Data Sheet D17078EJ4V0DS 5

www.DataSheet4U.com 2SK3919

SINGLE AVALANCHE CURRENT vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100 120
VDD = 12.5 V
IAS - Single Avalanche Current - A

RG = 25 Ω

Energy Derating Factor - %

100
IAS = 27 A VGS = 20 → 0 V
IAS ≤ 27 A
80
EAS = 73 mJ
10 60

40
VDD = 12.5 V
RG = 25 Ω
VGS = 20 → 0 V 20
Starting Tch = 25°C
1 0
0.01 0.1 1 10 25 50 75 100 125 150

L - Inductive Load - mH Starting Tch - Starting Channel Temperature - °C

6 Data Sheet D17078EJ4V0DS

www.DataSheet4U.com 2SK3919

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3) 2) TO-252 (MP-3ZK)

6.6 ±0.2

0.7 TYP.
Mold Area 2.3 ±0.1
5.3 TYP.
4.3 MIN. 0.5 ±0.1
6.5±0.2 2.3±0.1

1.0 TYP.
4 0.5±0.1
5.1 TYP.
4.3 MIN.
4.0 MIN.

No Plating

6.1 ±0.2
4

10.4 MAX. (9.8 TYP.)

4.0 MIN.

6.1±0.2
16.1 TYP.
1 2 3

0.51 MIN.
No Plating
1.8 ±0.2

1.14 MAX. 1 2 3

9.3 TYP.

0.8
No Plating

1.14 MAX. 0.76±0.12 0 to 0.25

2.3 2.3 0.5±0.1
0.76 ±0.1 0.5 ±0.1

2.3 TYP. 2.3 TYP. 1.0

1. Gate
2. Drain
1.02 TYP.

1. Gate 3. Source
2. Drain 4. Fin (Drain)
3. Source
4. Fin (Drain)

EQUIVALENT CIRCUIT
Drain

Body
Gate Diode

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.

Data Sheet D17078EJ4V0DS 7

www.DataSheet4U.com 2SK3919

• The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.

(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).

M8E 02. 11-1