SEMICONDUCTOR E25A2CPS, E25A2CPR

TECHNICAL DATA STACK SILICON DIFFUSED DIODE

ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. D F2

FEATURES
ᴌAverage Forward Current : IO=25A.
ᴌReverse Voltage : 200V(Min.) E

POLARITY F1

L2
E25A2CPS (+ Type)
E25A2CPR (- Type)

L1
B
A
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS DIM MILLIMETERS
CHARACTERISTIC SYMBOL RATING UNIT A Φ11.7+0.1/-0 F1 0.32
B 3.85+0/-0.2 F2 3.1
Repetitive Peak D _ 0.1
Φ1.45 + G 0.5
VRRM 200 V
Reverse Voltage E 1.55 L1 8.4 MAX
DIM TYPE POLARITY MILLIMETERS
1.35 S 17.5+0/-1.5
Non-Repetitive Peak L2
PRM (Pulse duration 30ỌS kW R 21.5+0/-1.5
Reverse Voltage
Non-repetitive)
Average Forward Current IF(AV) 25 A PF
250
Peak 1 Cycle Surge Current IFSM (10mS Condition A
Half sine wave 1 cycle)
Junction Temperature Tj -40ᴕ200 ᴱ
Storage Temperature Range Tstg -40ᴕ200 ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage VFM IFM=100A - - 1.18 V
Reverse Voltage VRM IR=5mA 200 - - V
Repetitive Peak Reverse Current IRRM VR=200V - - 50 ỌA
Reverse Recovery Time trr IF=-IR 100mA - - 15 ỌS
IFM=100A, Im=100mA,
Transient Thermal Resistance ẤVF - - 150 mV
Pt=100mS
Reverse Leakage Current Under
HIR Ta=150ᴱ, VR=VRM - - 2.5 mA
High Temperature
Junction to Case - - 0.93
Temperature Resistance Rth ᴱ/W
Junction to Fin - - 1.13

1998. 2. 19 Revision No : 0 1/1