DERIVATION OF MOSFET IDS VS.

VDS + VGS

Derive the current expressions in the MOSFET:

2
VDS
Linear Region: ID = µCox W
L
[(VGS − VT H )VDS − 2
]
W
Saturation Region: ID = µCox 2L (VGS − VT H )2

1. Linear Region

Figure 1. Concentration Contours in Linear Region. A uniform nar-

row channel exists.

KVL:

VG − VS = VG − VC + VC − VS

VG − VS = VGS

VG − VC = VGC

VC − VS = V (x)

VGS = VGC + V (x) or VGS − V (x) = VGC

1
2 DERIVATION OF MOSFET IDS VS. VDS + VGS

Total charge density at x on capacitor(COX ) is QT (x):

QT (x) = VGC COX = (VGS − V (x))COX

QT (x) = Q(x)mobile + Q(x)depletion

Q(x)mobile =mobile electron charge in channel at x

Q(x)mobile = [VGS − V (x) − VT H ]COX

Use mobile charge to get current:

Jn = qµnE + qDn dn
dx
= qµnE (no diffusion current in the channel)

qn(x) = Q(x)mobile = Qm (x)

Jn = Qm (x)µE , but E = − dV
dx

Jn = −Qm (x)µ dV
dx
, substitute for Qm (x)

Jn = µCox (VGS −V (x)−VT H ) dV

dx
, separate variables and neglect (-) sign. Consider

only the magnitude.

Jn dx = µCox [(VGS − VT H ) − V (x)]dV

Due to continuity, Jn = constant (no hole current or no generation, recombina-

tion). Integrating from source to drain or from x=0 to x=L, where L=gate length:
RL R V (L)
Jn 0
dx = µCox V (0)
[(VGS − VT H ) − V (x)]dV

V(L) = VDS , V(0)=0

RL R VDS
Jn 0
dx = µCox 0
[(VGS − VT H ) − V (x)]dV
V 2 VDS
Jn L = µCox [(VGS − VT H )V − ]
2 0
2
VDS
µCox
Jn = L
[(VGS − VT H )VDS − 2
]
 DERIVATION OF MOSFET IDS VS. VDS + VGS 3

ID = Jn W (W=Device Width)

Jn for channel is Amp/cm since Qm = Charge/cm2

2
VDS
ID for Linear Region: ID = µCox W
L
[(VGS − VT H )VDS − 2
]

2. Saturation Region

When VDS ≥ (VGS − VT H ) channel pinches off. This means that the channel

current near the drain spreads out and the channel near drain can be approximated

as the depletion region. After this occurs, at VDS = (VGS − VT H ), if you make VDS

larger, the current ID does not change (to zero approximation). This is because

any additional VDS you add will get dropped across the depletion region and won’t

change the current ID .

So for VDS ≥ (VGS − VT H ) we find ID by setting VDS = (VGS − VT H ) substituting

into the linear equation.

(VGS −VT H )2
ID = µCox W
L
[(VGS − VT H )(VGS − VT H ) − 2
]

ID for Saturation Region:

W
ID = µCox 2L (VGS − VT H )2
4 DERIVATION OF MOSFET IDS VS. VDS + VGS

source drain

n=10^17 n=10^15

Figure 2. Concentration Contours in Linear Region. A uniform nar-

row channel exists.

source drain

n=10^17 n=10^15

Figure 3. Concentration Contours in Saturation Region. Channel

narrow near source and spreads out and widens near drain, said to be

“pinched off”.