Avx Transguard /Staticguard/Multiguard Multilayer Ceramic Transient Voltage Suppressors

A KYOCERA GROUP COMPANY
AVX
TransGuard®/StaticGuard/MultiGuard
Multilayer Ceramic
Transient Voltage Suppressors
TransGuard®
AVX Multilayer Ceramic Transient Voltage Suppressors
The contents of this catalog are entitled and located on the pages noted below:
TransGuard Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Part Number Identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Available TransGuard Ratings (By Case Size) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Performance Characteristics (TransGuards). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
StaticGuard ............................................................................................................................... 14
MultiGuard . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
TransFeed 0805 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
TransGuard Typical Circuits Requiring Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
TransGuard Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Packaging - Chips. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Packaging - Axial Leads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
AVX Technical Services and Testing Facility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
NOTICE: Specifications are subject to change without notice. Contact your nearest AVX Sales Office for the latest specifications. All statements, information and
data given herein are believed to be accurate and reliable, but are presented without guarantee, warranty, or responsibility of any kind, expressed or implied.
Statements or suggestions concerning possible use of our products are made without representation or warranty that any such use is free of patent infringement
and are not recommendations to infringe any patent. The user should not assume that all safety measures are indicated or that other measures may not be required.
Specifications are typical and may not apply to all applications.
TransGuard®
GENERAL DESCRIPTION
The AVX TransGuard® Transient Voltage Suppressors (TVS)
with unique high-energy multilayer construction represents
state-of-the-art overvoltage circuit protection. Monolithic
multilayer construction provides protection from voltage
transients caused by ESD, lightning, NEMP, inductive switch-
ing, etc. True surface mount product is provided in EIA
industry standard packages. Thru-hole components are
supplied as conformally coated axial devices.
TRANSGUARD® DESCRIPTION
TransGuard® products are zinc oxide (ZnO) based ceramic
semiconductor devices with non-linear voltage-current charac-
teristics (bi-directional) similar to back-to-back zener diodes.
They have the added advantage of greater current and energy
handling capabilities as well as EMI/RFI attenuation. Devices
are fabricated by a ceramic sintering process that yields a
structure of conductive ZnO grains surrounded by electrically
insulating barriers, creating varistor-like behavior.
The number of grain-boundary interfaces between conduct-
ing electrodes determines “Breakdown Voltage” of the
device. High voltage applications such as AC line protection
require many grains between electrodes while low voltage
requires few grains to establish the appropriate breakdown
voltage. Single layer ceramic disc processing proved to be a
viable production method for thick cross section devices
with many grains, but attempts to address low voltage
suppression needs by processing single layer ceramic disc
formulations with huge grain sites has had limited success.
AVX, the world leader in the manufacture of multilayer
ceramic capacitors, now offers the low voltage transient
protection marketplace a true multilayer, monolithic surface
mount varistor. Technology leadership in processing
thin dielectric materials and patented processes for
precise ceramic grain growth have yielded superior energy
dissipation in the smallest size. Now a varistor has voltage
characteristics determined by design and not just cell sorting
whatever falls out of the process.
Multilayer ceramic varistors are manufactured by mixing
ceramic powder in an organic binder (slurry) and casting it
into thin layers of precision thickness. Metal electrodes are
deposited onto the green ceramic layers which are then
stacked to form a laminated structure. The metal electrodes
are arranged so that their terminations alternate from one
end of the varistor to the other. The device becomes a
monolithic block during the sintering (firing) cycle providing
uniform energy dissipation in a small volume.
1
TransGuard®
PART NUMBER IDENTIFICATION
Surface Mount Devices Axial Leaded Devices
Important: For part number identification only, not for Important: For part number identification only, not for
construction of part numbers. construction of part numbers.
The information below only defines the numerical value of part number The information below only defines the numerical value of part number
digits, and cannot be used to construct a desired set of electrical limits. digits, and cannot be used to construct a desired set of electrical limits.
Please refer to the TransGuard® part number data (blue sections, pages Please refer to the TransGuard® part number data (blue section, page 9)
3-8 & 14,16 & 22) for the correct electrical ratings. for the correct electrical ratings.
V C 1206 05 D 150 R P V A 1000 05 D 150 R L

TERMINATION FINISH: LEAD FINISH:
X = Pt/Pd/Ag (Non-Plated) Copper clad steel, solder coated
P = Ni/Sn Alloy (Plated)
PACKAGING (Pcs/Reel): PACKAGING (Pcs/Reel):
STYLE “D” “R” “T”
STYLE “D” “R” “T”
VA1000 1,000 3,000 7,500
VC0402* N/A 4,000 10,000
VA2000 1,000 2,500 5,000
VC0603 1,000 4,000 10,000
VC0805 1,000 4,000 10,000 CLAMPING VOLTAGE:
VC1206* 1,000 4,000 10,000 Where: 100 = 10.0V 580 = 58.0V
VC1210* 1,000 2,000 10,000 150 = 15.5V 650 = 65.0V
300 = 30.0V 101 = 100.0V
CLAMPING VOLTAGE: 400 = 40.0V 121 = 120.0V
Where: 100 = 10.0V 500 = 50.0V
150 = 15.5V 560 = 56.0V ENERGY:
200 = 20.0V 580 = 58.0V Where: A = 0.1J
250 = 25.0V 620 = 62.0V D = 0.4J
300 = 30.0V 650 = 65.0V K = 2.0J
390 = 39.0V 101 = 100.0V
400 = 40.0V 121 = 120.0V
WORKING VOLTAGE:
Where: 03 = 3.3 VDC 26 = 26.0 VDC
ENERGY: 05 = 5.6 VDC 30 = 30.0 VDC
Where: A = 0.1J H = 1.2J 14 = 14.0 VDC 48 = 48.0 VDC
C = 0.3J J = 1.5J 18 = 18.0 VDC 60 = 60.0 VDC
D = 0.4J P = 3.0J
F = 0.7J V = 0.02J
CASE SIZE DESIGNATOR:
SIZE LENGTH DIAMETER
G = 0.9J X = 0.05J
1000 4.32mm (0.170") 2.54mm (0.100")
WORKING VOLTAGE: 2000 4.83mm (0.190") 3.56mm (0.140")
Where: 03 = 3.3 VDC 18 = 18.0 VDC
05 = 5.6 VDC 26 = 26.0 VDC
CASE STYLE:
A = Axial
09 = 9.0 VDC 30 = 30.0 VDC
12 = 12.0 VDC 48 = 48.0 VDC PRODUCT DESIGNATOR:
14 = 14.0 VDC 60 = 60.0 VDC V = Varistor
CASE SIZE DESIGNATOR:
MARKING:
SIZE LENGTH WIDTH All axial TransGuards® are marked with vendor identification, product
0402 1.00±0.10mm (0.040"±0.004") 0.5±0.10mm (0.020"±0.004") identification, voltage/energy rating code and date code (see example below):
0603 1.60±0.15mm (0.063"±0.006") 0.8±0.15mm (0.032"±0.006")
0805 2.01±0.2mm (0.079"±0.008") 1.25±0.2mm (0.049"±0.008") AVX
1206 3.20±0.2mm (0.126"±0.008") 1.60±0.2mm (0.063"±0.008") TVS
1210 3.20±0.2mm (0.126"±0.008") 2.49±0.2mm (0.098"±0.008") 05D
025
CASE STYLE:
C = Chip
Where: AVX = Always AVX (Vendor Identification)
TVS = Always TVS (Product Identification
PRODUCT DESIGNATOR: - Transient Voltage Suppressor)
V = Varistor
05D = Working VDC and Energy Rating (Joules)
Where: 05 = 5.6 VDC, D = 0.4J
*Contact Factory for Availability 025 = Three Digit Date Code
Where: 0 = Last digit of year (2000)
MARKING:
25 = Week of year
All standard surface mount TransGuard® chips will not be marked. Marked
chips will be considered a special; contact factory for minimum order
requirement and price adder.
2
TransGuard®
VOLTAGES = 5.6, 9, 14 OR 18 VDC
0402 SURFACE MOUNT
Dimensions: Actual Size:
Length 1.0 ± 0.10mm (0.040" ± 0.004")
Width 0.5 ± 0.10mm (0.020" ± 0.004")
Thickness 0.6mm Max. (0.024")
Termination Band Width 0.25 ± 0.15mm (0.010" ± 0.006")
Termination Separation 0.3mm Min. (0.012")
Termination Finish X = Pt/Pd/Ag (Non-Plated)
P = Ni/Sn Alloy (Plated) - Contact Factory for Availability
AVX Working Breakdown Clamping Peak Transient

Part Number Voltage Voltage Voltage Current Energy Capacitance Inductance
Symbol VWM VB VC Ipeak Etrans C L
Units Volts Volts Volts Amp Joules pF nH
(max.) (max.) (max.) (max.) (typ.) (typ.)
0.5Vrms @:
Test Condition <50µA 1mA DC 8/20µS† 8/20µs 10/1000µS di/dt = 100mA/nS
1MHz
VC040205X150_ _ 5.6 7.6 - 9.3 15.5 20 0.05 360 <1.0
VC040209X200_ _ 9.0 11.0 - 14.0 20.0 20 0.05 230 <1.0
VC040214X300_ _ 14.0 16.5 - 20.3 30.0 20 0.05 120 <1.0
VC040218X400_ _ 18.0 22.9 - 28.0 40.0 20 0.05 90 <1.0
Termination Finish: X = Pt/Pd/Ag (Non-Plated)
P = Ni/Sn Alloy (Plated) Contact Factory for Availability
Packaging (Pcs/Reel): see page 2
StaticGuard
Test Condition <10µA <1µA DC 8/20µS† 8/20µs 10/1000µS 0.5Vrms @: di/dt =
1 MHz 100mA/ns
VC04LC18V500 _ _ ≤18.0 N/A <50.0 15 0.02 40 <1.0
Note: Details of Performance Curves shown on page 4.
VWM—Maximum steady-state DC operating voltage the varistor can maintain and not exceed 50µA leakage current
VB—Voltage across the device measured at 1mA DC current
VC—Maximum peak voltage across the varistor measured at a specified pulse current and waveform
†Transient Energy Rating Pulse Current & Waveform
<0.05 Joule 1A 8/20µS
Ipeak—Maximum peak current which may be applied with the specified waveform without device failure
Etran—Maximum energy which may be dissipated with the specified waveform without device failure
C—Device capacitance measured with zero volt bias 0.5Vrms and 1MHz
L—Device inductance measured with a current edge rate of 100 mA/nS
Dimensions: Millimeters (Inches)
3
TransGuard®
TYPICAL PERFORMANCE CURVES (0402 CHIP SIZE)
VOLTAGE/CURRENT CHARACTERISTICS PULSE DEGRADATION
Multilayer construction and improved grain structure result in Traditionally varistors have suffered degradation of electrical
excellent transient clamping characteristics up to 20 amps performance with repeated high current pulses resulting in
peak current, while maintaining very low leakage currents decreased breakdown voltage and increased leakage cur-
under DC operating conditions. The VI curves below show the rent. It has been suggested that irregular intergranular
voltage/current characteristics for the 5.6V, 9V, 14V, 18V and boundaries and bulk material result in restricted current
low capacitance StaticGuard parts with currents ranging from paths and other non-Schottky barrier paralleled conduction
parts of a micro amp to tens of amps. paths in the ceramic. Repeated pulsing of TransGuard tran-
sient voltage suppressors with 150Amp peak 8 x 20µS
waveforms shows negligible degradation in breakdown
voltage and minimal increases in leakage current. This
does not mean that TransGuard suppressors do not suffer
100 degradation, but it occurs at much higher current.
VC04LC18V500
VC040218X400
80 VC040214X300
VC040209X200
VC040205X150 ESD TEST OF 0402 PARTS
Voltage (V)
60
35
40 VC04LC18V500
30
20
BREAKDOWN VOLTAGE (Vb)
25 VC040218X400
0
10-9 10-7 10-5 10-3 10-1 10 103 105
Current (A) 20
VC040214X300
15
VC040209X200
PEAK POWER VS PULSE DURATION
1300 10
VC040205X150
1200
5
10 100 1000 10000
1100
8kV ESD STRIKES
VC040218X400
1000
VC040214X300
900 VC040209X200 INSERTION LOSS CHARACTERISTICS
VC04LC18V500
800 VC040205X150 0
PEAK POWER (W)
700
-5
600
500 -10
dB
400 VC04LC18V
VC040218X
-15 VC040214X
300
VC040209X
VC040205X
200
-20
100
0 -25
10 100 1000 0.01 0.1 1 10
IMPULSE DURATION (µS) Frequency (GHz)
4
TransGuard®
VOLTAGES = 3.3, 5.6, 9, 14, 18, 26 OR 30 VDC
0603 SURFACE MOUNT
Length 1.6 ± 0.15mm (0.063" ± 0.006")
Width 0.80 ± 0.15mm (0.032" ± 0.006")
Termination Band Width 0.35 ± 0.15mm (0.014" ± 0.006")
Termination Separation 0.7mm Min. (0.028")

0.5Vrms @:
1kHz 1 MHz
VC060303A100 _ _ 3.3# 4.1 - 6.0 10 30 0.1 1800 1230 <1.0
VC060305A150 _ _ 5.6 7.6 - 9.3 15.5 30 0.1 1000 825 <1.0
VC060309A200 _ _ 9.0 11.0 - 14.0 20 30 0.1 650 550 <1.0
VC060314A300 _ _ 14.0 16.5 - 20.3 30 30 0.1 500 424 <1.0
VC060318A400 _ _ 18.0 22.9 - 28.0 40 30 0.1 275 225 <1.0
VC060326A580 _ _ 26.0 31.0 - 38.0 58 30 0.1 200 160 <1.0
VC060330A650 _ _ 30.0 37.0 - 46.0 65 30 0.1 175 150 <1.0
VC06LC18X500 _ _ See pages 14-15 for specification and performance details.
Packaging: (Pcs/Reel) see page 2
0.1 Joule 2A 8/20µS
C—Device capacitance measured with zero volt bias 0.5Vrms and 1kHz
#Test condition <100µA
5
TransGuard®
VOLTAGES = 3.3, 5.6, 9, 12, 14, 18, 26 OR 30 VDC
0805 SURFACE MOUNT
Length 2.01 ± 0.2mm (0.079" ± 0.008")
Width 1.25 ± 0.2mm (0.049" ± 0.008")
Land Length 0.71mm Max. (0.028")


0.5Vrms @:
1kHz 1 MHz
VC080503A100 _ _ 3.3# 4.1 - 6.0 10 40 0.1 1300 930 <1.5
VC080503C100 _ _ 3.3# 3.7 - 5.6 10 120 0.3 5500 4000 1.5
VC080505A150 _ _ 5.6 7.6 - 9.3 15.5 40 0.1 1250 860 <1.5
VC080505C150 _ _ 5.6 7.1 - 8.7 15.5 120 0.3 3500 2400 1.5
VC080509A200 _ _ 9 11.0 - 14.0 20 40 0.1 780 585 <1.5
VC080512A250 _ _ 12 14.0 - 18.3 25 40 0.1 525 400 <1.5
VC080514A300 _ _ 14 16.5 - 20.3 30 40 0.1 375 280 <1.5
VC080514C300 _ _ 14 15.9 - 19.4 30 120 0.3 1100 820 1.5
VC080518A400 _ _ 18* 22.9 - 28.0 40 30 0.1 350 275 <1.5
VC080518C400 _ _ 18* 22.5 - 27.5 40 100 0.3 650 500 1.5
VC080526A580 _ _ 26 31.0 - 37.9 58 30 0.1 140 110 <1.5
VC080526C580 _ _ 26 30.5 - 37.3 58 100 0.3 250 190 1.5
VC080530A650 _ _ 30 37.0 - 46.0 65 30 0.1 100 80 <1.5
VC08LC18A500 _ _ See pages 14-15 for specification and performance details.
0.2 - 0.3 Joules 5A 8/20µS
*Withstands 24.5 VDC for 5 minutes (automotive applications)
6
TransGuard®
VOLTAGES = 3.3, 5.6, 14, 18, 26, 30 OR 48 VDC
1206 SURFACE MOUNT
Length 3.20 ± 0.2mm (0.126" ± 0.008")
Width 1.60 ± 0.2mm (0.063" ± 0.008")


0.5Vrms @:
1kHz 1 MHz
VC120603A100 _ _ 3.3# 4.1 - 6.0 10 40 0.1 2000 1500 <1.7
VC120603D100 _ _ 3.3# 3.7 - 5.6 10 150 0.4 4700 3800 1.7
VC120605A150 _ _ 5.6 7.6 - 9.3 15.5 40 0.1 1200 870 <1.7
VC120605D150 _ _ 5.6 7.1 - 8.7 15.5 150 0.4 3000 2300 1.7
VC120614A300 _ _ 14 16.5 -20.3 30 40 0.1 600 500 <1.7
VC120614D300 _ _ 14 15.9 -19.4 30 150 0.4 1200 900 1.7
VC120618A400 _ _ 18* 22.9 -28.0 40 30 0.1 350 270 <1.7
VC120618D400 _ _ 18* 22.5 -27.5 40 150 0.4 800 635 1.7
VC120626D580 _ _ 26 30.5 -37.3 58 120 0.4 550 450 1.7
VC120630D650 _ _ 30 36.0 -45.0 65 120 0.4 500 400 1.7
VC120648D101 _ _ 48 56.0 -68.0 100 100 0.4 225 185 1.7
VC12LC18A500 _ _ See pages 14-15 for specification and performance details.

≥0.4 Joules 10A 8/20µS
Ipeak—Maximum peak current which may be applied with the specified waveform without excessive leakage
7
TransGuard®
VOLTAGES = 18, 26, 30, 48 OR 60 VDC
1210 SURFACE MOUNT
Length 3.20 ± 0.2mm (0.126" ± 0.008")
Width 2.49 ± 0.2mm (0.098" ± 0.008")


0.5Vrms @:
1kHz 1 MHz
VC121018J390 _ _ 18* 21.5 - 26.5 39 500 1.5 3100 2400 2.0
VC121026H560 _ _ 26 29.7 - 36.3 56 300 1.2 2150 1675 2.0
VC121030G620 _ _ 30 35.0 - 43.0 62 220 0.9 1900 1530 2.0
VC121030H620 _ _ 30 35.0 - 43.0 62 280 1.2 1975 1575 2.0
VC121048G101 _ _ 48 54.5 - 66.5 100 220 0.9 500 430 2.0
VC121048H101 _ _ 48 54.5 - 66.5 100 250 1.2 525 450 2.0
VC121060J121 _ _ 60 67.0 - 83.0 120 250 1.5 450 375 2.0
8
TransGuard®
VOLTAGES = 3.3, 5.6, 14, 18, 26, 30, 48, 60 VDC
AXIAL LEADED
Dimensions: VA1000 VA2000
Body Length (L) = 4.32mm Max. (0.170") 4.83mm Max. (0.190")
Body Diameter (D) = 2.54mm Max. (0.100") 3.56mm Max. (0.140")
Lead Diameter = 0.51 ± .05mm (0.020 ± 0.002) 0.51 ± .05mm (0.020 ± 0.002)
Lead Length = 25.4mm Min. (1") 25.4mm Min. (1")
Lead Finish Copper Clad Steel, Solder Coated

0.5Vrms @:
1kHz 1 MHz
VA100003A100 _ L 3.3# 4.1 - 6.0 10 40 0.1 1500 1100 3.5
VA100003D100 _ L 3.3# 3.7 - 5.6 10 150 0.4 4700 3800 3.5
VA100005A150 _ L 5.6 7.6 - 9.3 15.5 40 0.1 1000 750 3.5
VA100005D150 _ L 5.6 7.1 - 8.7 15.5 150 0.4 2800 2150 3.5
VA100014A300 _ L 14 16.5 - 20.3 30 40 0.1 400 300 3.5
VA100014D300 _ L 14 15.9 - 19.4 30 150 0.4 1200 900 3.5
VA100018A400 _ L 18 22.9 - 28.0 40 40 0.1 350 270 3.5
VA100018D400 _ L 18 22.5 - 27.5 40 150 0.4 900 700 3.5
VA100026D580 _ L 26 30.5 - 37.3 58 120 0.4 700 550 3.5
VA100030D650 _ L 30 36.0 - 45.0 65 120 0.4 600 500 3.5
VA100048D101 _ L 48 56.0 - 68.0 100 100 0.4 200 165 3.5
VA200060K121 _ L 60 67.0 - 83.0 120 300 2.0 400 340 3.5
VA10LC18A500 _ L See pages 14-15 for specification and performance details.

Lead Finish: L = Copper Clad Steel, Solder Coated
9
TransGuard®
TYPICAL PERFORMANCE CURVES (0603, 0805, 1206 & 1210 CHIP SIZES)
VOLTAGE/CURRENT CHARACTERISTICS
Multilayer construction and improved grain structure result in excellent transient clamping characteristics up to 500 amps peak
current, depending on case size and energy rating, while maintaining very low leakage currents under DC operating condi-
tions. The VI curve below shows the voltage/current characteristics for the 3.3V, 5.6V, 12V, 14V, 18V, 26V, 30V, 48V and
60VDC parts with currents ranging from parts of a micro amp to tens of amps.
VI Curves - 3.3V and 5.6V Products

25
20
Voltage (V)
15
10
VI Curves - 9V, 12V, and 14V Products

5 50
0 40
10-9 10-6 10-3 10+0 10+3
Current (A)
Voltage (V)
3.3V, 0.1J 3.3V, >0.1J 5.6V, 0.1J 5.6V, >0.1J 30
20
10
VI Curves - 18V and 26V Products

100 0
10-9 10-6 10-3 10+0 10+3
Current (A)
80 9V, 0.1J 12V, 0.1J 14V, 0.1J 14V, >0.1J

Voltage (V)
60
40
VI Curves - 30V, 48V, and 60V Products

20 200
0
10-9 10-6 10-3 10+0 10+3 150
Current (A)
Voltage (V)
18V, 0.1J 18V, >0.1J 26V, 0.1J 26V, >0.1J

100
50
0
10-9 10-6 10-3 10+0 10+3
Current (A)
30V, 0.1J 30V, >0.1J 48V 60V
10
TransGuard®
3.3V
11
TransGuard®
TEMPERATURE CHARACTERISTICS
TransGuard® suppressors are designed to operate over the full temperature range from -55°C to +125°C. This operating
temperature range is for both surface mount and axial leaded products.
Temperature Dependence of Voltage TYPICAL ENERGY DERATING VS TEMPERATURE

100 1.25
90
80
Average Breakdown Voltage
70
Voltage as a Percent of
60
50 1
40
30
0.8
Energy Derating
20
0.6
10
10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2
Current (A) 0.4
-40 C 25 C 85 C 125 C
0.2
TYPICAL BREAKDOWN AND CLAMPING VOLTAGES

0
VS TEMPERATURE - 5.6V -60 -40 -20 0 20 40 60 80 100 120 140 160
and Clamping (VC ) Voltages
Typical Breakdown (VB )
20 Temperature ( oC)
VC
15
5.6V
10 VB
5
-55 -40 -20 0 20 40 60 80 100 120 140 150
Temperature ( o C)
TYPICAL CAPACITANCE VS TEMPERATURE

TYPICAL BREAKDOWN AND CLAMPING VOLTAGES +25
VS TEMPERATURE - 18V
+20
50
+15
Capacitance Relative to 25°C
( VC )
40
+10
18V ge
30 ( VB ) era
+5 Av
20 0
-55 -40 -20 0 20 40 60 80 100 120 140 150
25° C Reference
-5
Temperature ( o C)
-10
-15
TYPICAL BREAKDOWN AND CLAMPING VOLTAGES
-20
VS TEMPERATURE - 26V
60 -25
-40 -20 0 20 40 60 80 100 120 140
( VC ) Temperature (°C)
50
26V
40
( VB )
30
-55 -40 -20 0 20 40 60 80 100 120 140 150
Temperature (°C)
12
TransGuard®
PULSE DEGRADATION
Traditionally varistors have suffered degradation of electrical perfor- 150Amp peak 8 x 20µS waveforms shows negligible degradation
mance with repeated high current pulses resulting in decreased in breakdown voltage and minimal increases in leakage current.
breakdown voltage and increased leakage current. It has been This does not mean that TransGuard suppressors do not suffer
suggested that irregular intergranular boundaries and bulk material degradation, but it occurs at much higher current. The plots
result in restricted current paths and other non-Schottky barrier of typical breakdown voltage vs number of 150A pulses are
paralleled conduction paths in the ceramic. Repeated pulsing of shown below.
both 5.6 and 14V TransGuard transient voltage suppressors with
Repetitive Peak Current Strikes Repetitive Peak Current Strikes

TransGuard 1206 0.4J Product TransGuard 1210 1.5J Product
Change in Breakdown Voltage (%)
10% 10%

VC120618D400
8% 8%
VC120626D580
6% 6%
VC120614D300 VC121018J390
4%
4%
VC120605D150
2%
2%
0%
0 100 200 300 400 500 600 0%
Number of Strikes 0 100 200 300 400 500 600
Number of Strikes
Figure 1 Figure 3
Repetitive Peak Current Strikes Repetitive Peak Current Strikes

TransGuard 0805 0.1J and 0.3J Products StaticGuard 0805 0.1J Product
30%
15%
25%
10% 20%
VC080518A400
15%
VC080518C400
5% 10%
VC08LC18A500
5%
0% 0%
0 100 200 300 400 500 600 0 100 200 300 400 500 600
Number of Strikes Number of Strikes
Figure 2 Figure 4
CAPACITANCE/FREQUENCY
CHARACTERISTICS
TransGuard Capacitance vs Frequency 0603 TransGuard Capacitance vs Frequency 0805 TransGuard Capacitance vs Frequency 1206
100 100 100
80 80
Capacitance Change (%)
80
VC080505C150
60 60 60
VC120614D300
40 40 40
20 20 20
VC060305A150 VC080518C400 VC120648D101
VC06LC18X500
0 0 0
VC060326A580 VC080514A300 VC12LC18A500
0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 100
Frequency (MHz) Frequency (MHz) Frequency (MHz)
13
StaticGuard
ESD Protection for CMOS and Bi Polar Systems
GENERAL INFORMATION
• Typical ESD failure voltage for CMOS and/or Bi Polar is • Low capacitance (<200pF) is required for high-speed
≥ 200V. data transmission.
• 15kV ESD pulse (air discharge) per • Low leakage current (IL) is necessary for battery
IEC 1000-4-2, Level 4, generates < 20 millijoules of operated equipment.
energy.
PART NUMBER IDENTIFICATION (See page 2 for details)

Chips Axials
V C 08 LC 18 A 500 R P V A 10 LC 18 A 500 R L
TERMINATION FINISH: LEAD FINISH:
X = Pt/Pd/Ag (Non-Plated) L = Copper Clad Steel,
P = Ni/Sn Alloy (Plated) Solder Coated
PACKAGING (Pcs/Reel) PACKAGING (Pcs/Reel)
CLAMPING VOLTAGE CLAMPING VOLTAGE
ENERGY RATING ENERGY RATING
WORKING VOLTAGE (0-18V) WORKING VOLTAGE (0-18V)
LOW CAPACITANCE DESIGN LOW CAPACITANCE DESIGN
CASE SIZE DESIGNATOR CASE SIZE DESIGNATOR
CASE STYLE CASE STYLE
PRODUCT DESIGNATOR PRODUCT DESIGNATOR
AVX Working Clamping Peak Transient
Part Number Voltage Voltage Current Energy Capacitance Inductance
Symbol VWM VC Ipeak Etrans C L
Volts Volts Amp Joules pF nH
Units (max.) (max.) (max.) (max.) (typ.) (typ.)
Test Condition <10µA 8/20µS† 8/20µs 0.5Vrms @:

10/1000µS di/dt =
1 MHz 100mA/ns
VC04LC18V500 _ _ See specifications on page 3 and performance data on page 4.
VC06LC18X500 _ _ ≤18.0 50 20 .05 75 <1.0
VC08LC18A500 _ _ ≤18.0 50 30 0.1 100 <1.5
VC12LC18A500 _ _* ≤18.0 50 30 0.1 200 <1.7
VA10LC18A500 _ L ≤18.0 50 30 0.1 200 <3.5
= Contact Factory for Availability
*
Lead Finish: L = Copper Clad Steel, Solder Coated
<0.05 Joule 1A 8/20µS
C—Device capacitance measured with zero volt bias 0.5Vrms and 1MHz
14
StaticGuard
TYPICAL PERFORMANCE DATA
StaticGuard ESD RESPONSE
VC06LC18X500 Capacitance Histogram IEC 1000-4-2 (8 Kv Contact Discharge)
30% 50
VC08LC18A500
25% VC12LC18A500
45
Clamping Voltage (V)

20% VC06LC18X500
15% 40
10%
35
5%
0%
45 50 55 60 65 30
1 10 100 1000 10000
Capacitance (pF @ 1MHz & 0.5V)
Number of ESD Strikes
Measured Data Calculated
VC08LC18A500 Capacitance Histogram StaticGuard S21

DB
14% 14% 0
VC12LC18A500
12% 12%
VC08LC18A500
10% 10% -10
8% 8%
6% 6% -20
VC06LC18X500
4% 4%
-30
2% 2%
0% 0%
61 63 65 67 69 71 73 75 77 79 81 83 85 87 89
-40
Capacitance (pF) 0 500 1000 1500 2000 2500
1MHz, 0.5VRMS Measured Data Calculated Distribution Frequency (MHz)
VC12LC18A500 Capacitance Histogram VI Curves - StaticGuard Products

100
14% 14%
12% 12% 80
10% 10%
Voltage (V)
60
8% 8%
6% 6% 40
4% 4%
20
2% 2%
0% 0% 0
161 163 165 167 169 171 173 175 177 179 181 183 185 187 189 10-9 10-6 10-3 10+0 10+3
Capacitance (pF) Current (A)
1MHz, 0.5VRMS Measured Data Calculated Distribution 06LC 08LC 12LC 10LC
15
MultiGuard (2 & 4 Elements)
AVX Multilayer Ceramic
Transient Voltage Suppression Arrays
GENERAL DESCRIPTION AND COMMENTS
AVX’s Transient Voltage Suppressor (TVS) Arrays address uration, 5.6, 9, 14 and 18 volts, with 0.1 joule energy rating
three trends in today’s electronic circuits: (1) mandatory are available. The StaticGuard series (≤18V, and low capaci-
ESD protection, (2) PCB downsizing, and (3) reduced com- tance) is also available, rated at 0.05 joules energy.
ponent placement costs. Where multiple lines require ESD AVX’s MultiGuard products consume less than half the PCB
protection, the 4-element 0612 chip is an ideal solution. real estate required for the equivalent number of discrete
If less than 4 lines of protection is needed and/or if space chips. This size advantage, coupled with the savings associ-
will not permit the use of the larger 0612 chip, the latest ated with placing only one chip, makes MultiGuard the TVS
2-element 0508 chip may offer the answer. In either config- component of choice for ESD protection of I/O lines.
SIZE: 0508 SIZE: 0612
ELECTRICAL CHARACTERISTICS PER ELEMENT

0.5Vrms @:
Test Condition <50µA 1mA DC 8/20µS 8/20µs 10/1000µS di/dt = 100mA/nS
1 MHz
2 ELEMENT 0508 CHIP
MG052S05A150 _ _ 5.6 6.8 - 9.3 15.5 30 0.1 825 <1.0
MG052S09A200 _ _ 9.0 10.0 - 14.0 20 30 0.1 550 <1.0
MG052S14A300 _ _ 14.0 14.7 - 20.3 30 30 0.1 425 <1.0
MG052S18A400 _ _ 18.0 20.4 - 28.0 40 30 0.1 225 <1.0
MG052L18X500 _ _ ≤18.0 N/A 50 20 0.05 <75 <1.0

4 ELEMENT 0612 CHIP
MG064S05A150 _ _ 5.6 6.8 - 9.3 15.5 30 0.1 825 <1.0
MG064S09A200 _ _ 9.0 10.0 - 14.0 20 30 0.1 550 <1.0
MG064S14A300 _ _ 14.0 14.7 - 20.3 30 30 0.1 425 <1.0
MG064S18A400 _ _ 18.0 20.4 - 28.0 40 30 0.1 225 <1.0
MG064L18X500 _ _ ≤18.0 N/A 50 20 0.05 <75 <1.0

16
PHYSICAL DIMENSIONS AND PAD LAYOUT
2-ELEMENT MULTIGUARD 4-ELEMENT MULTIGUARD
L L
P X X
S S S S
P
T T
BW C/L BW C/L OF CHIP

OF CHIP C
L
C
L
BL
W
BL W
PART DIMENSIONS mm (inches) PART DIMENSIONS mm (inches)

L W T BW BL P S L W T BW BL P X S
2.01±0.20 1.25±0.20 1.02 MAX 0.41±0.1 0.18 +0.25
-0.08 0.76 REF 0.38±0.10 3.20±0.20 1.60±0.20 1.22 MAX 0.41±0.10 0.18 +0.25
-0.08 0.76 REF 1.14±0.10 0.38±0.10
(0.079±0.008) (0.049±0.008) (0.040 MAX) (0.016±0.004) (0.007 +.010
-.003 ) (0.030 REF) (0.015±0.004) (0.126±0.008) (0.063±0.008) (0.048 MAX) (0.016±0.004) (0.007+.010
-.003 ) (0.030 REF) (0.045±0.004) (0.015±0.004)
E E
PAD LAYOUT D PAD LAYOUT D
DIMENSIONS mm (inches) A
DIMENSIONS mm (inches) A
A B C D E B A B C D E C
B
0.89 1.27 2.16 0.46 0.76 C

0.89 1.65 2.54 0.46 0.79
(0.035) (0.050) (0.085) (0.018) (0.030) (0.035) (0.065) (0.100) (0.018) (0.030)
PART NUMBERING SYSTEM

MG 06 4 S 14 A 300 T X
MULTIGUARD TERMINATION FINISH:
X = Pt/Pd/Ag (Non-Plated)
CHIP SIZE Contact Factory for Availability
05 = 0508
06 = 0612 PACKAGING
(PCS/REEL)
CONFIGURATION D = 1,000
2 = 2 Elements R = 4,000
4 = 4 Elements T = 10,000
STYLE CLAMPING VOLTAGE

S = Standard Construction 150 = 15.5V
L = Low Capacitance 200 = 20.0V
300 = 30.0V
WORKING VOLTAGE 400 = 40.0V
05 = 5.6V 500 = 50.0V
09 = 9.0V
14 = 14.0V ENERGY RATING
18 = 18.0V A = 0.10 Joules
X = 0.05 Joules
17
TYPICAL PERFORMANCE CURVES
VOLTAGE/CURRENT CHARACTERISTICS
Multilayer construction and improved grain structure result in excel-
lent transient clamping characteristics in excess of 30 amps (20
amps on MG064L18X500) peak current while maintaining very low
leakage currents under DC operating conditions. The VI curves
below show the voltage/current characteristics for the 5.6V, 9V, 14V
and 18V parts with currents ranging from fractions of a micro amp
to tens of amps.
5.6V 9.0V and 14.0V

25 50
20 40
Voltage (V)
Voltage (V)
15 30
10 20
5 10
0 0
10-9 10-6 10-3 10+0 10+3 10-9 10-6 10-3 10+0 10+3
Current (A) Current (A)
MG064S05A150 MG064S09A200 MG064S14A300
18V MG064L18X500
100 70
80 60
50
Voltage (V)
60
Voltage (V)
40
40
30
20
20
0 10
10-9 10-6 10-3 10+0 10+3 10-9 10-6 10-3 10+0 10+3
Current (A) Current (A)
MG064S18A400 MG064L18X500
18
TEMPERATURE CHARACTERISTICS
MultiGuard suppressors are designed to operate over the full temperature range from -55°C to +125°C.
TYPICAL ENERGY DERATING VS TEMPERATURE
Temperature Dependence of Voltage
1.25
100
90
80
Average Breakdown Voltage
70
Voltage as a Percent of
1.0
60
50
40 0.8
Energy Derating
30
0.6
20
0.4
10
10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 0.2
Current (A)
0
-40 C 25 C 85 C 125 C -60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature ( oC)
TYPICAL BREAKDOWN AND CLAMPING VOLTAGES TYPICAL BREAKDOWN AND CLAMPING VOLTAGES
VS TEMPERATURE - 5.6V VS TEMPERATURE - 18V

20 50
VC ( VC )
15 40
5.6V 18V
10 VB 30 ( VB )
5 20
-55 -40 -20 0 20 40 60 80 100 120 140 150 -55 -40 -20 0 20 40 60 80 100 120 140 150
Temperature ( o C) Temperature ( o C)
TRANSIENT VOLTAGE SUPPRESSORS
MG064L18X500
MG064S18A400
MG064S14A300 MG064S09A200
MG064S05A510
0 100 200 300 400 500 600 700 800 900 1000
CAPACITANCE (pF) DISTRIBUTION
19
TransFeed
TVS Protection and EMI Attenuation in a Single 0805 Chip - V2F Series
GENERAL DESCRIPTION Schematic Diagram
AVX has combined the best electrical characteristics of its
TransGuard Transient Voltage Suppressors (TVS) and its IN OUT
Feedthru Capacitors into a single chip for state-of-the-art
overvoltage circuit protection and EMI reduction over a
broad range of frequencies. This unique combination of
multilayer ceramic construction in a feedthru configuration Electrical Model
gives the circuit designer a single 0805 chip that responds IN OUT
LS LS
to transient events faster than any TVS device on the mar-
ket today, and provides significant EMI attenuation when in
the off-state. RV C RP
The reduction in parallel inductance, typical of the feedthru RON

chip construction when compared to the construction of
standard TVS or ceramic capacitor chips, gives the LP
TransFeed product two very important electrical advan-
tages: (1) faster “turn-on” time. Calculated response times
of <200 pSec are not unusual with this device, and mea- but the roll-off characteristic becomes much flatter, result-
sured response times range from 200 – 250 pSec. The ing in EMI filtering over a much broader frequency spec-
TransFeed “turn-on” characteristic is less than half that of trum. Typical applications include filtering/protection on
an equivalent TransGuard part — and TransGuards clamp Microcontroller I/O Lines, Interface I/O Lines, Power Line
transient voltages faster than any other bipolar TVS solution Conditioning and Power Regulation.
such as diodes; (2) the second electrical advantage of Where designers are concerned with both transient voltage
lower parallel inductance, coupled with optimal series protection and EMI attenuation, either due to the electrical
inductance, is the enhanced attenuation characteristics of performance of their circuits or due to required compliance
the TransFeed product. Not only is there significantly to specific EMC regulations, the TransFeed product is an
greater attenuation at a higher self-resonance frequency, ideal choice.
HOW TO ORDER
V 2 F 1 05 A 150 Y 2 E D X
Varistor Feedthru Voltage Varistor DC Packaging

Capacitor 05 = 5.6V Clamping Resistance Code
09 = 9.0V Voltage 1 = 0.150 Ohms Pcs./Reel
14 = 14.0V 150 = 15.5V 2 = 0.200 Ohms D = 1,000
18 = 18.0V 200 = 20.0V 3 = 0.250 Ohms R = 4,000
300 = 30.0V T = 10,000
400 = 40.0V
500 = 50.0V
Chip Size No. of Energy Capacitance Feedthru Termination Finish
2 = 0805 Elements Rating Tolerance Current X = Pt/Pd/Ag
X = 0.05J Y = +100/-50% D = 500 mA (Non-Plated)
A = 0.1J E = 750 mA P = Ni/Sn Alloy (Plated)
C = 0.3J F = 1.0 Amp Contact Factory for Availability
20
TransFeed
DIMENSIONS millimeters (inches)

L W T BW BL EW X S
2.01 ± 0.20 1.25 ± 0.20 0.76 ± 0.03 0.46 ± 0.10 0.18 + 0.25 -0.08 0.25 ± 0.13 1.02 ± 0.10 0.23 ± 0.05
0805
(0.079 ± 0.008) (0.049 ± 0.008) (0.030 ± 0.003) (0.018 ± 0.004) (0.007 + 0.010 -0.003) (0.010 ± 0.005) (0.040 ± 0.004) (0.009 ± 0.002)
L
X
S
BW
CL
BL
W
EW
RECOMMENDED SOLDER PAD LAYOUT (Typical Dimensions) millimeters (inches)

T P S W L C
0805 3.45 (0.136) 0.51 (0.020) 0.76 (0.030) 1.27 (0.050) 1.02 (0.040) 0.46 (0.018)
4 Pad Layout 3 Pad Layout
T T
P P
P P
S W S W
INPUT OUTPUT INPUT OUTPUT
C L C L
Note: It is only necessary to ground

one center terminal. However,
AVX recommends that both
side terminals be connected.
21
TransFeed
TRANSFEED ELECTRICAL SPECIFICATIONS (0805 CHIP SIZE)
AVX Working Breakdown Clamping Peak Transient DC Resistance Feedthru
Part Number Voltage Voltage Voltage Current Energy Capacitance Ohms Current
Symbol VWM VB VC Ipeak Etrans C Ohms I
Units Volts Volts Volts Amp Joules pF Ω Amp.

(max.) (max.) (max.) (max.) (typ.)
0.5Vrms @:
Test Condition <50µA 1mA DC 8/20µS† 8/20µs 10/1000µS
1 MHz
V2F105A150Y2E _ _ 5.6 7.6 - 9.3 15.5 30 0.1 800 0.200 750 mA
V2F109A200Y2E _ _ 9.0 11.0 - 14.0 20.0 30 0.1 575 0.200 750 mA
V2F114A300Y2E _ _ 14.0 16.5 - 20.3 30.0 30 0.1 300 0.200 750 mA
V2F118A400Y2E _ _ 18.0 22.9 - 28.0 40.0 30 0.1 200 0.200 750 mA
V2F118X500Y3D _ _ <18.0 N/A <50.0 20 0.05 <100 0.250 500 mA
V2F105C150Y1F _ _ 5.6 7.1 - 8.7 15.5 120 0.3 2500 0.150 1 Amp
V2F109C200Y1F _ _ 9.0 10.5 - 13.5 20.0 120 0.3 1800 0.150 1 Amp
V2F114C300Y1F _ _ 14.0 15.9 - 19.4 30.0 120 0.3 900 0.150 1 Amp
V2F118C400Y1F _ _ 18.0 22.5 - 27.5 40.0 120 0.3 500 0.150 1 Amp
0.2 - 0.3 Joules 5A 8/20µS
PERFORMANCE CHARACTERISTICS
dB Attenuation vs Frequency
0 0
TransFeed 0.1J TransFeed 0.3J
18LC
-10 -10
18A
18C
14A
-20 -20
9A
14C
-30 -30
S21 (dB)
S21 (dB)
9C
5A
-40 -40
5C
-50 -50
-60 -60
-70 -70
0.01 0.1 1 10 0.01 0.1 1 10
Frequency (GHz) Frequency (GHz)
22
TransFeed
INSERTION LOSS COMPARISON
(TransFeed vs TransGuard)
0805 – dB vs Frequency
5.6V, 0.1J 14V, 0.1J
0 0
VC080505A150 VC080514A300
-10
-10
-20
-20
S21 (dB)
S21 (dB)
-30
-30
-40
-40
-50
V2F105A150Y2E
-60 -50
V2F114A300Y2E
-70 -60
0.01 0.1 1 10 0.01 0.1 1 10
18V, 0.1J ≤18V, 0.05J

0 0
VC080518A400 VC08LC18A500
-10 -10
-20
-20
S21 (dB)
S21 (dB)
-30
-30
-40
-40 V2F118X500Y3D
-50
-50 -60
V2F118A400Y2E
-60 -70
0.01 0.1 1 10 0.01 0.1 1 10
5.6V, 0.3J 14V, 0.3J

0 0
VC080514C300
-10 -10
VC080505C150
-20 -20
S21 (dB)
S21 (dB)
-30 -30
-40 -40
-50 -50
V2F105C150Y1F V2F114C300Y1F
-60 -60
-70 -70
0.01 0.1 1 10 0.01 0.1 1 10
18V, 0.3J
0
VC080518C400
-10
-20
S21 (dB)
-30
-40
-50
V2F118C400Y1F
-60
-70
0.01 0.1 1 10
Frequency (GHz)
23
TransFeed
CURRENT vs TEMPERATURE
0805 – 0.1 Joule
30
Component Temperature (°C)
Note:
Dashed
18V Portions
Not Guaranteed
18LC 14V
25
5V
9V
20
0.3 0.5 0.75 1
Current (Amps)
CURRENT vs TEMPERATURE
0805 – 0.3 Joule
30
Component Temperature (°C)
18V
25
14V
5V
20
0 0.25 0.5 0.75 1
Current (Amps)
24
TransFeed
FEEDTHRU VARISTORS
AVX Multilayer Feedthru Varistors (MLVF) are an ideal choice The electrical model for a ZnO MLV and a ZnO Feedthru MLV
for system designers with transient strike and broadband are shown below. The key difference in the model for
EMI/RFI concerns. the Feedthru is a transformation in parallel to series induc-
Feedthru Varistors utilize a ZnO varistor material and the tance. The added series inductance helps lower the injected
electrode pattern of a feedthru capacitor. This combination transient peak current (by 2πfL) resulting in an additional ben-
allows the package advantage of the feedthru and material efit of a lower clamping voltage. The lowered parallel induc-
advantages of the ZnO dielectric to be optimized. tance decreases the turn on time for the varistor to <250ps.
ZnO MLV Feedthrus exhibit electrical and physical advantages
over standard ZnO MLVs. Among them are:
1. Faster Turn on Time
2. Broadband EMI attenuation
3. Small size (relative to discrete MLV and EMI filter schemes)
Discrete MLV Model Discrete MLVF Model
To Device To Device
PCB Requiring Requiring
Trace Protection Protection
LS LS
LP Solder Pad Solder Pad
RV C RP
RV C RP
Ron
Ron
LP
Solder Pad Solder Pad
Where: Rv = Voltage Variable resistance Where: Rv = Voltage Variable resistance

(per VI curve) (per VI curve)
Rp ≥ 1012 Ω Rp = Body IR
C = defined by voltage rating and energy level C = defined by voltage rating and energy level
Ron = turn on resistance Ron = turn on resistance
Lp = parallel body inductance Lp = minimized parallel body inductance
Ls = series body inductance
25
TransFeed
APPLICATIONS MARKET SEGMENTS TYPICAL CIRCUITS REQUIRING

• EMI Suppression • Computers TRANSIENT VOLTAGE
• Broadband I/O Filtering • Automotive
• Vcc Line Conditioning • Power Supplies
PROTECTION AND EMI FILTERING
• Multimedia Add-On Cards The following applications and schematic diagrams
FEATURES • Bar Code Scanners show where TransFeed TVS/ EMI filtering devices might
• Remote Terminals be used:
• Small Size • Medical Instrumentation • System Board Level Interfaces: (Fig. 1)
• Low ESR • Test Equipment Digital to RF
• Ultra-fast Response Time • Transceivers Analog to Digital
• Broad S21 Characteristics • Cellular Phones / Pagers Digital to Analog
• Voltage Regulation (Fig. 2)
• Power Conversion Circuits (Fig. 3)
• GaAs FET Protection (Fig. 4)
Fig. 1 – System Interface Fig. 2 – Voltage Regulators
REGULATOR +
Sensor/Keyboard/
Touchscreen Input
DIGITAL
RF BOARD
BOARD
By X Bus
Fig. 3 – Power Conversion Circuits/Power Switching Circuits
+3.3V
MAIN POWER INTERFACE
POWER MANAGEMENT +3.3V CARD
Sensor Input Display CHIP
ANALOG DIGITAL
BOARD BOARD +5V
+1.8V
+12V
Keyboard
DIGITAL ANALOG ASIC
BOARD BOARD
Fig. 4 – GaAs FET Protection

OUTPUT
SPECIFICATION COMPARISON INPUT
MLVF PARAMETER MLV

0805 0805
5ph Ls typical N/A
<600nh Lp typical <1.5nh
<0.025Ω Ron typical <0.1Ω
100pf to 2.5nf C typical 100pf to 5.5nf
see VI curves Rv typical see VI curves
>0.25 x 1012Ω Rp typical >1 x 1012Ω
<250ps Typical turn on time <500ps
Typical frequency response
A comparison table showing typical element parameters and resulting
performance features for MLV and MLVF is shown above.
26
TransGuard ®
TYPICAL CIRCUITS REQUIRING PROTECTION

The following applications and schematic diagrams show where
TransGuards might be used to suppress various transient voltages:
• ASIC Reset & Vcc Protection
• Micro Controllers, Relays, DC Motors
• I/O Port Protection
• Keyboard Protection
• Modem Protection
• Sensor Protection
• Preamplifier Protection
• Audio Circuit Protection
• LCD Protection
• Optics Protection
27
TransGuard®
AVX Multilayer Transient Voltage Protection
Typical Circuits Requiring Protection
ASIC RESET & Vcc PROTECTION
IOCK S DO-15
IOCS16 1
IRQSETO PDREF
IRQSET1 BCLK2
1 µf 0.1 µf 0.01 µf CLK14
Vcc IOR
RADO-7 IOW
AO-23 LA20
5.6V 0.1-0.4J BHE CASH0
NPBUSY CASLO0
CPUCLK CASH1
GND CASL1
DPH CASH2
DRQIN CASL2
NPERR CASH3
HLDA CASL3
ICHRDY RAS0
RESET RAS1
MASTER RAS2
MNIO RAS3
5.6V 0.1J RDYIN RAS4
PCUIN
MICRO CONTROLLERS RELAYS, DC MOTORS
TRANSGUARD CHARACTERISTICS
WORKING VOLTAGE ≥ RELAY OR MOTOR VOLTAGE
ENERGY RATING TYPICALLY > 0.3J
CAPACITANCE IS OF NO CONCERN
CMOS RELAY DRIVER LM319 RELAY DRIVER

VCC +5V +28V
30V 0.4J
IN 1
IN 2 RELAY
1/2 MM74C908 MM74C918 IN 1

1/2 LM319
18V 0.4J IN 2
RELAY
= TransGuard
28
TransGuard®
I/O PORT PROTECTION
WORKING VOLTAGE TYPICALLY 14V - 18V
ENERGY RATING TYPICALLY 0.05J - 0.1J
CAPACITANCE SHOULD BE MINIMIZED
SUB NOTEBOOK & PDA’S NOTEBOOK & WORK STATION
IOCS16 D C D T RXD2
HDCS1 T T S D DCD2
IDED7 R S R X R12 D
HDCSO 22 2 2 DTR1
IDEENLO CTS1
IDEENHI RTS1 D
AVCC DSR1
SETCUR TXD1
AVSS RXD1
RVI D
DCD1
FILTER RI1
FGND250 Vcc
FGND500 STROBE D
DO-D9 AUTOF
TC ERROR
DACK INIT
MAX 211
IRQ3 SLCTIN DRVR/RCVR
IRQ4
PINTR
FINTR R
IOR PARALLEL
AEN OUTPUT
FDRQ 0 TO 7 R
RESET
PWRGD
INDEX
MTRO
R
DRV1
DRVO ACK
MTR1 R
BUSY
DIR PE
STEP R H D AO SLCT
WDATA D D S R
A S K X2
WG ATE
T E C - X1/CLK
TRKO
A L H PREN
WRPRT G A9 DRVTYP
KEYBOARD PROTECTION
WORKING VOLTAGE >5.6V
ENERGY RATING TYPICALLY <0.4J
CAPACITANCE PREFERRED TO BE MINIMUM
KEYBOARD
CONTROLLER 74AHCT05 FERRITE
BEAD
DATA
14V - 18V 0.1J
74AHCT05 FERRITE
BEAD
CLOCK
14V - 18V 0.1J
= TransGuard
29
TransGuard®
MODEM PROTECTION
WORKING VOLTAGE <26V
ENERGY RATING ≥ 0.1J
2/5/9 +5V
330 pf
Am7910
14
10K ohm
P1/8 1
1489 0.68 µf
RC
3 DTR
0.68 µf
P1/4 4 6 RTS TC
8 TD 15 pf
24
P1/2 10 S1-5
7 MC0
23
MC1 2000 pf 22 pf
P1/1 MC2
MC3 100 ohm
1488 MC4
1 megohm
P1/3 3
2 RD 33 nf
RES
P1/6 6 4 CTS 1.2K ohm
RING +5V
5
1.2K ohm
9 CD BRTS +5V
2 4 9/22
P1/5 8 10
14 1 7
+5V -5V
+12V 1 megohm
-12V
SENSOR PROTECTION
WORKING VOLTAGE TYPICALLY >14V
ENERGY RATING > 0.4J
CAPACITANCE IS NO CONCERN
1 µf 180 ohm 1N4004 1N4004
120V MOV 1N4004 14V 0.4J 0.01 µf32
= TransGuard
30
TransGuard®
ANTENNA AND PREAMPLIFIER PROTECTION
ENERGY RATING 0.05J - 0.9J
CAPACITANCE OF CONCERN ON MANY DESIGNS
PREAMPLIFIER PROTECTION
+5V
15 pf 10 µh
RF 1.8K ohm
INPUT MPF102
0.01 µf NEXT
STAGE
0.01 µf
1 megohm 180 pf
26V 0.1J
100 ohm
AUDIO CIRCUIT PROTECTION
ENERGY RATING 0.1J
PAGER AUDIO PROTECTION NOTEBOOK, WORK STATION AUDIO PROTECTION

Vcc
IN
68 ohm 68 ohm
INPUT FROM
up OR DRIVER IC 2N2907
1K ohm
14V 0.1J IN 2N2222
14V 0.1J
= TransGuard
31
TransGuard®
LCD PROTECTION
WORKING VOLTAGE < 5.6V
ENERGY RATING < 0.1J
LSI
CONTROLLER
8
COM. 64
D0-D7 LCD
DRIVER
240 x 64
WR x1
RD 240
3
CE
4 3 SEG
C/D
DRIVER
FS x3
RESET 12
4.91 MHz 8 TRANSGUARD
OPTIONAL
VC06LC18X500
StaticGuard
S - RAM
OPTICS PROTECTION
WORKING VOLTAGE ≤ 18V
ENERGY RATING 0.1J
CAPACITANCE SHOULD BE MINIMIZED
OPTO ISOLATER PROTECTION LASER DIODE PROTECTION

5V
330 ohm 330 ohm 1N4148

1 ohm
MICRO OUTPUT
CONTROLLER SIGNAL 0.1 µf
100 ohm
OPTO 18V 0.1J
TRIAC
2N4400
5.6V 0.1J TRIAC
100 pf LASER
2N6659
DIODE
1N4148
OUTPUT VN64GA
3.9K ohm 330 ohm 2N4400
SIGNAL
2N2222 1K ohm
2N6659
3.9K ohm
= TransGuard
32
TransGuard ®
APPLICATION NOTES
• SMT Process Characteristics

of AVX TransGuards
• IEC 1000-4 Requirements
• Turn On Time Characteristics

of AVX Multilayer Varistors
• The Impact of ESD on

Insulated Portable Equipment
• AVX TransGuard Motor and

Relay Application Study
• AVX Multilayer Varistors in

Automobile MUX Bus Applications
33
TransGuard®
Application Notes: SMT Process Characteristics of AVX TransGuards
TRANSGUARD SURFACE MOUNT TRANSGUARD PROCESS GUIDELINES
DEVICES The following solderability profiles are suggested for the differ-
The move toward SMT assembly of Transient Voltage ent soldering techniques.
Suppressors (TVS) will continue accelerating due to improved
long-term reliability, more efficient transient voltage attenua- INFRARED REFLOW SOLDERING (IR)
tion and size/functionality/cost issues.
Soldering with IR has the highest yields due to controlled
TransGuards are uniquely suited for wide-scale usage in SMT
heating rates and solder liquidus times. Only the dwell time
applications. TransGuards exhibit many advantages when
and peak temperature limitations of resin-molded compo-
used in SMT assemblies. Among them are:
nents need to be considered. Typical recommended solder
• Available in standard EIA chip sizes 0402/0603/0805/ paste wet laydown is 10-15 mils.
1206/1210.
• Placed with standard equipment (8mm tape and reel). 250
N
COATU
• Processed with fewer guidelines than either ceramic chip 215-219°C OL RA
or resistor chip devices. 200 DO L
TEMPERATURE °C
183°C 45-80 W
N
• Exhibit the highest energy/volume ratio of any EIA size SEC. ABOVE
150 SOLDER
TVS. MELTING
This general guideline is aimed at familiarizing users with the POINT
100°C
characteristics of soldering multilayer SMT ZnO TransGuards. 100
ALLOWS UNIFORM
TransGuards can be processed on wave or infrared reflow BOARD HEATING
50
assembly lines. For optimum performance, EIA standard PREHEAT ZONE ACTIVATES
solder pads (land areas) shown in Figure 1 are recommended SOLDER FLUX
regardless of the specific attachment method. 0
0 1 2 3 4
TIME IN MINUTES
Dimensions: millimeters (inches) IR Reflow Solder Profile
Figure 2: Infrared Reflow Temperature Profile

0.61
(0.024) 0.89 1.02
1.70 (0.067)
0.51
(0.020) 2.54
(0.035) (0.040)
WAVE SOLDERING
0.76 3.05
0.61
(0.024)
(0.100) (0.030) (0.120) 1.02
(0.040) (Not Recommended for 0402 and 0603)
0.89
(0.035) Wave soldering has the highest solder temperatures and heat
1.02
0.51
(0.040) transfer rates whose temperature limits are determined by
(0.020)
0.76
parts like transistors and integrated circuits. The profile has
1.27
(0.030) (0.050) a short dwell time in the solder pot and requires a high
0402 0603 0805 preheat to minimize thermal shock in ceramic components
and temperature problems with resin-molded parts.
1.02 1.02 250 232°C WAVE TEMPERATURE

(0.040) (0.040)
100°C MAXIMUM, 70-80°C PREFERRED

200
TEMPERATURE °C
4.06 2.03 4.06 2.03

(0.160) (0.080) (0.160) (0.080)
160°C FIRST
150 FIRST
PREHEAT WAVE
1.02 1.02 ZONE SECOND
(0.040) (0.040) 100 WAVE
SECOND
1.65 2.54 PREHEAT
(0.065) (0.100) ZONE
50
1206 1210 27°C
0
0 1 2 3 4
Figure 1: TransGuard Solder Pad Dimensions TIME IN MINUTES
Wave Soldering Profile
Figure 3: Wave Soldering Temperature Profile
34
TransGuard®
Application Notes: IEC 1000-4 Requirements
WHAT IS IEC 1000-4? WAVEFORM PARAMETERS
The International Electrotechnical Commission (IEC) has
Level Test First Peak TR 30 nS 60 nS
written a series of specifications, IEC 1000-4, which man- Voltage of nS Current Current
date the performance of all electronic devices in a variety of Level Discharge Amps ± Amps ±
transient and incident RF conditions. This specification kV Current 30% 30%
requirement resulted as part of Europe’s move toward a sin- Amps ±
10%
gle market structure and a desire to formalize and harmonize
current member countries’ requirements. As of January 1, 1 2 7.5 0.7 4 2
-1
1996, all electronic and electrical items sold to Europe must
2 4 15 0.7 8 4
meet IEC 1000-4 series specifications. -1
3 6 22.5 0.7 12 6
WHY IS IEC 1000-4 REQUIRED BY -1
EUROPE? 4 8 30 0.7 16 8
-1
The various regulatory agencies within Europe feel that the
IEC 1000-4 series of specifications is necessary to insure Upon completion of the test, the system must not experi-
acceptable performance of electronic equipment in a world ence upset (data or processing errors) or permanent dam-
filled with increasingly more Electromagnetic Interference - age. The waveforms are to be injected at or along the DUT’s
EMI. Furthermore, as electronic systems become more body which is accessible in normal set-up and operation.
portable, and the transient susceptibility of semiconductors
increases, government regulations are essential to maintain
a minimum level of performance in all equipment. Europe IEC 1000-4-3 ELECTROMAGNETIC
is so serious about the problem that they require that equip- COMPATIBILITY IMPACT TESTING (EMC)
ment be certified via testing to meet IEC 1000-4 series This test is concerned with the susceptibility of equipment
specifications after 1/1/96 to avoid fines and prosecution. when subjected to radio frequencies of 27 MHz to 500 MHz.
The system must be able to withstand three (3) incident
radiation levels:
HOW DO COMPANIES SELLING
ELECTRONIC SYSTEMS MEET IEC 1000-4 Level 1 1V/m field strength
PARTS 2-5 SPECIFICATIONS? Level 2 3V/m field strength
Companies and design engineers must now use protective Level 3 10V/m field strength
circuits or devices to meet these requirements. First, a Level X User defined > 10V/m field strength
description of IEC 1000-4/2-6 is in order: The system must not experience upset (data or processing
errors) or permanent errors.
IEC 1000-4-2 ESD TESTING
REQUIREMENTS IEC 1000-4-4 ELECTRICAL FAST
All equipment destined for Europe must be able to with- TRANSIENT (EFT) TESTING
stand 10 strikes of ESD waveforms with Tr < 1ns in contact The EFT test is modeled to simulate interference from
discharge mode (preferred) at pre-selected points accessi- inductive loads, relay contacts and switching sources. It
ble during normal usage or maintenance. Testing shall be consists of coupling EFT signals on I/O parts, keyboard
performed at one or more of four (4) severity levels, depend- cables, communication lines and power source lines. The
ing upon equipment category. system, depending upon appropriate severity level, must be
Level Contact Discharge1 Air Discharge Mode able to withstand repetition rates of 2.5 kHz to 5 kHz for ≥ 1
Mode Test Voltage Test Voltage kV minute as follows:
kV
1 2 2
Open Circuit Output Voltage/10%
2 4 4
On Power Supply On I/O, Signal, Data, Control lines
3 6 8
Level 1 0.5kV 0.25kV
4 8 15
Level 2 1kV 0.5kV
1000-4-2 Test Conditions Level 3 2kV 1kV
Level 4 4kV 2kV
Preferred mode of testing due to repeatability.
1
35
TransGuard®
Application Notes: IEC 1000-4 Requirements
IEC 1000-4-5 UNIDIRECTIONAL POWER SUMMARY
LINE SURGE TEST AVX TransGuards are exceptionally suited to meet the defined
The details of this specification for high energy disturbances portions of the IEC 1000-4 document. Experimentation is crit-
are being addressed in several drafts under discussion with- ical to proper choice and selection of devices to suppress
in the EC at this time. 1000-4-3/4. Samples are available from your local sales
representative.
IEC 1000-4-6 CONDUCTED RF TEST
FROM 9kHz TO 80MHz
The details of this specification for conducted broad band IEC 1000-4-2 ESD DEVICE TEST
25kV ESD STRIKES On VC080514C300
RF signals are being addressed in a first edition draft within
the EC at this time. 35
Designers have the option of using AVX TransGuards to 30
Voltage (v)
meet IEC 1000-4-2, 3 and 4.
25
In the case of IEC 1000-4-2 TransGuards can be used to
20
suppress the incoming Transient just like a Zener diode
would. TransGuards, however, exhibit bipolar characteris- 15
tics, a faster turn-on-time (<1nS), a better repetitive strike
capability and superior thermal stability to the Zener sup- 10
Vb Vb Vc Vc
pression device. Furthermore, TransGuards are typically Pre Test Post Test Pre Test Post Test
smaller and lighter when placed on SMT circuit boards. See TransGuard Parameters
Figure 1 for data illustrating IEC 1000-4-2 repetitive strike 25kV Direct Discharge, 25 hits
capability.
The TransGuards effective capacitance allows the device to
be used to meet IEC 1000-4-3 and 1000-4-4. The device’s IEC 1000-4-2 ESD DEVICE TEST
parallel capacitance can be used as effectively as a capaci- 25kV ESD STRIKES On VC080514C300
tor to block low level incident and conducted RF energy. If in
25
the case of some levels of IEC 1000-4-3 and IEC 1000-4-4
Leakage Current (µA)
when the intensity of pulse is greater than the device’s 20

breakdown capability it will then turn on and suppress via
MOV means rather than capacitance (as in the small signal 15
case). Effectiveness hinges upon the proper placement of 10

the device within the PCB (which is usually easily accom-
plished since TransGuards are so small). 5
0
II II
Pre Test Post Test
25kV Direct Discharge, 25 hits
Figure 1
36
TransGuard®
Application Notes: Turn on Time Characteristics of
AVX Multilayer Varistors
(MLVs - TRANSGUARDS)
INTRODUCTION TEST PROCEDURE
Due to the growing importance of ESD immunity testing, as The TVS device under test (DUT) was placed on a PCB test
required by the EMC Directive, proper selection of voltage fixture using SN60/40 solder. The test fixture (see Figure 1)
suppressor devices is critical. The proper selection is a func- was designed to provide an input region for an 8kV contact
tion of the performance of the device under transient condi- ESD discharge waveform (per IEC 1000-4-2 level 4 require-
tions. An ideal transient voltage suppressor would reach its ments). In addition, the fixture was designed to provide low
“clamping voltage” in zero time. Under the conditions impedance connections to the DUTs.
imposed by the 1991 version of IEC 1000-4-2, the actual
turn-on-time must be less than one nanosecond to properly
respond to the fast leading edge of the waveform defined in
the standard.
It has been found during testing of transient suppressors
that the response time is very closely dictated by the pack-
aging of the device. Inductance that is present in the con-
nection between the silicon die and the leads of the device
creates an impedance in series with the suppressor device;
this impedance increases the overall device response time,
reducing the effectiveness of the suppressor device.
The purpose of this paper is to present the Turn on Time
characteristics of Multilayer Varistors (MLVs) and to compare
the MLV Turn on Time to that of various silicon transient
voltage suppressors (SiTVs).
The Turn on Time of a transient voltage suppressor (TVS) is
Figure 1. DUT Test Fixture
of growing importance since IEC 1000-4-2 now specifies
ESD waveform with a rise time < 1 ns. Therefore, TVS’s The ESD pulse was injected to the PCB from a Keytek mini-
must have a turn on time < 1 ns to effectively suppress zap ESD simulator. Additionally, the fixture was to channel
ESD. In many, if not all, ESD suppression applications, TVS the ESD event to a storage oscilloscope to monitor the
turn on time can be of more importance than absolute suppressor’s response. Six resistors were used on the PCB
clamping voltage (Vc) of the TVS (assuming that the TVS to provide waveshaping and an attenuated voltage to the
clamping voltage is less than the damage voltage of the storage scope (see Figure 2):
circuit or IC).
To measure the turn on time of today’s TVS’s, a broad cross
section of MLVs and SiTVs were chosen. Only surface
mount devices were chosen in order to best represent
today’s TVS current usage/trends and to keep the test
MINI-ZAP with CONTACT DISCHARGE TIP
matrix to a reasonable level of simplicity. The following R3 R5
"LAUNCH AREA" 1.6k 1k
devices were tested:
TEK TDS
DEVICE 540 SCOPE
R1 R2 UNDER R4 R6
1.6k 1.6k TEST 1k 200
SMT MLV SiTVS
MA141WA
0603 BAV 99
0805 SOT 23 type
1206 SMB - 500W gull-wing SM device
1210 SMC - 1500W gull-wing SM device Figure 2. Schematic of Test Set Up
37
TransGuard®
Application Notes: Turn on Time Characteristics of
AVX Multilayer Varistors
The functions of the resistors are as follows: The resistor TVS TURN ON TIME
values were adjusted in “open circuit” conditions to obtain
Test results for SiTVs varied widely depending upon the
best open circuit response.
physical size and silicon die mounting configuration of the
R1, R2 (1.6K) - provide wave shaping during the ESD device. The results agree with several SiTVs manufacturers
discharge event papers indicating that the absolute response from the silicon
R3 (1.6K), R4 (1K), R5 (1K) - Form a 60 dB Attenuator die could be < 1 ns. However, when the die is placed in a
(1000:1 ratio) for input of Tektronix TDS 540 1 giga package, the turn on time delay increases dramatically.
sample/second storage oscilloscope The reason for this is the series inductance of the SiTVs
R6 (200 Ω) - provides matching to the 50 ohm coax feeding packaging decreases the effective response time of the
the TDS 540 oscilloscope. device. Reports of 1-5 ns are frequently referred to in SiTVs
manufacturers publications. Further, the turn on times for
The open circuit response of the ESD test fixture with a 9kV SiTVs vary dramatically from manufacturer to manufacturer
ESD pulse is shown in Figure 3. and also vary within a particular manufacturers lot. The data
provided in the following table generally agreed with these
Task Stopped: 74 Acquisitions findings:
∆: 800ps
O: -1.2ns SiTVS
CASE SIZE TURN ON SPEED
MA141WA 0.8ns
CH1 Rise BAV 99 0.9ns to 1.2ns
800ps
SOT 23 Type 0.8ns
SMB 1.5ns to 2.2ns
SMC 1.5ns to 3ns
SUMMARY
1.0 This test confirms calculations that show that AVX
CH1 2.00 V M 20.0ns CH1 2.20 V TransGuards have a true sub-nanosecond turn on time.
Figure 3. Open Circuit Response of Test Fixture Although the silicon die of a SiTVs has a sub-nanosecond
to an Injected ESD Waveform response, the packaged SiTVs typically has a response time
much slower than a TransGuard. If the two devices were
The graph shows the voltage attenuated by a factor directly compared on a single graph (see Figure 4), it could
of 1000, with a 800ps risetime for the ESD waveform be shown that the TransGuard diverts significantly more
(this agrees with typical data given by Keytek for equipment power than even the fastest SiTVs devices. Additionally,
performance). It should be noted that only the positive TransGuards have a multiple strike capability, high peak
polarity was tested. Prior testing showed turn on time was inrush current, high thermal stability and an EMI/RFI
not dependent upon waveform polarity (assuming that DUTs suppression capability which diodes do not have.
are bidirectional).
TEST RESULTS TRANSGUARD vs SILICON TVS TURN ON COMPARISON

ESD WAVEFORM SHAPE
100
MLV TURN ON TIME TRANSGUARDS 80

TRANSGUARD
TURN-ON TIME
(0.2 - 0.7 N SEC)
The turn on time test results for AVX TransGuards showed
60
Ip (%)
that all case sizes were capable of a sub-nanosecond turn on

response. This corresponds favorably with the calculated turn 40
on time of less than 1 ns. Specific performance data follows:
20
AVX TransGuard DIODE TURN-ON RANGE
(1.2 - 5.0 N SEC)
CASE SIZE TURN ON SPEED 0
0.1 1 10 100
0603 < 0.7 ns Time (ns)
IEC 801-2 ESD WAVE
0805 < 0.9 ns Typical Data
1206 < 0.9 ns Figure 4.

1210 < 0.8 ns
38
TransGuard®
Application Notes: The Impact of ESD on Insulated Portable Equipment
The purpose of this discussion is to recap the impact ESD In the predischarge scenario (Figure 2) a human charged to
has on portable, battery powered equipment. It will be –20 kV may approach a battery powered “system” on a
shown that ESD can cause failures in “floating ground sys- table. As the person reaches toward the system electrostat-
tems” in a variety of ways. Specifically, ESD induced failures ics dictate that the system will have an equal and opposite
can be caused by one or more of its complex components: charge on the system’s surface nearest to the person. SInce
Predischarge - Corona Generated RF the system we are approaching is isolated from ground, the
charge is only redistributed among the device. (If the system
Predischarge - E Field
were grounded a current would be generated by the loss of
Discharge - Collapsing E Field electrons to ground. The system would then become posi-
Discharge - Collapsing H Field tive relative to ground). The rate of approach of the human
Discharge - Current Injection...Voltage...Additional body model affects the charging current to a small extent.
Fields However, most importantly, it is the electrostatic field and
the unequal voltages which developed across the equip-
With this in mind it will be shown that the only way to insure ment that cause the destruction of components within the
equipment survivability to ESD is to use a Transient Voltage system. In general, unprotected IC’s (particularly CMOS) are
Suppressor (in addition to proper circuit layout, decoupling, susceptible to damage due to induced E field voltages.
and shielding). This problem is further complicated by the device type
In order to get a better understanding of what happens in an and complexity and the fact that the breakdown voltage
ESD event the charge developed by a human body should be of a generic IC will vary greatly from manufacturer to
defined. The ESD schematic equivalent of the human body manufacturer (Figure 3). This brief discussion should be
model is shown in Figure 1. Typically, the charge developed adequately convincing that electrostatically induced E field
on a person can be represented by a 150pF capacitor in can impact system reliability. IC protection can be achieved
series with a resistance of 330 ohms. The energy of an ESD by placing a transient suppressor on the most susceptible
waveform generated from this model is Q = 1/2 CV2 where Q pins of the sensitive IC’s (e.g., Vcc and I/O pins, etc.).
= total energy in Joules, C = capacitance of the human body
model in farads and V = charging voltage in volts. IC TYPE vs SUSCEPTIBILITY
10000
Voltages can be as high as 25 kV, however typical voltages
seen are in the 8 to 15 kV regions.
1000
RH
VOLTS
Where:
CH = Human body
model capacitance 100
typically 150pF
CH
RH = Human body
model resistance 10
typically 330 Ω CMOS S.TTL M.FET B.P. ECL JFET EPROM GaAsFET
TECHNOLOGY
Figure 1. Human Body Model TYPICAL MIN. TYPICAL MAX.
PREDISCHARGE E FIELD FAILURES Figure 3. IC Type E Field Susceptibility

Now that we have a definition of the basic ESD human body
model we can discuss the predischarge E field failure mode. CONTACT DISCHARGE FAILURES
As the charged person gets closer to the system, the situa-
POSITIVE INDUCED VOLTAGE tion is more complex. First a much more detailed human
body model is needed to represent the complex transmis-
+ –– sion line which will transport energy to the system
++ –
+ – (see Figure 4). In this discussion we will only consider
+ –
+ – the case of a single contact discharge. In the real world,
+ –
+ ––
+ –– however, multiple discharges will likely occur (possibly
+
++ –
– 20 kV + – caused by a person’s hand reacting to an ESD spark and
+ –
+++ – – then touching the system again, etc.).
In contact discharge, when a charged person approaches
RESULTING NEGATIVE CHARGE the system, E fields are induced. As the person gets closer
to the system, the field intensity becomes greater, eventually
NEGATIVE 20 kV CHARGE reaching a point large enough to draw an arc between the
Figure 2. Pre-Discharge Scenario
39
TransGuard®
Application Notes: The Impact of ESD on Insulated Portable Equipment
person and the system. In contrast to the noncontrast E field SUMMARY
example, the speed of approach is of great importance in the
contact discharge model. A fast approach causes a more Designers may be inclined to think that E field variation due
intensive discharge and faster current rise times and peaks. to near field electrostatics (as in the person being close
to the system but not touching it) can be eliminated by
The model shown on Figure 4 can be broken up into 4 sec- shielding. This is usually not the case because it is difficult to
tions for the sake of simplification. The first section is the get a tight columbic shield around internal circuitry without
human body model input voltage. This section is identical to incurring significant additional manufacturing costs.
the simplified human body model shown in Figure 1. Additionally, the shielding will likely have seams, ventilation
Section 2 takes into account how the human body model holes, or I/O ports which represent a significant portion
gets the energy to the system. This section considers the of a wavelength (at 5 GHz). Therefore, E fields and corona
inductance, resistance and capacitance of the human’s arm generated RF can be a problem. Finally, if the system has
and finger and its capacitance relative to ground and the I/O connectors, keyboards, antennas, etc., care must be
system. taken to adequately protect them from direct/and indirect
The third section is the inductance and resistance of the arc transients. The most effective resolution is to place a
which is created as section 2 approaches the system TransGuard as close to the device in need of protection as
(Section 4). possible.These recommendations and comments are based
Section four is the system itself. upon case studies, customer input and Warren Boxleitner’s
book Electrostatic Discharge and Electronic Equipment - A
The combination of the capacitances and inductances in Practical Guide for Designing to Prevent ESD Problems.
these sections form a complex network of LC tank circuits
which will inject a variety of waveforms (transients) into the
system. These waveforms will range in frequency from very
high (5 GHz) to high (100 MHz) to low (20-50 MHz) plus a
variety of under damped and over damped waveforms.
Finally, in addition to current/voltage injection occurring as a
result of the discharge, there will be collapsing E and H
fields and significant high frequency RF waveforms. Many
times these waveforms propagate into shielded equipment
and cause system/device failures.
Section 3
ARC
LS RS
Section 1 Section 2 Section 4

Human Body Model Arm/Hand Model
LH RH LA RA CF
L
CAK
CH CA CK
R
Where: CH = Lumped capacitance between the human body and earth

RH = Lumped resistance of the human body
LH = Lumped inductance of the human body
CA = Lumped capacitance between the person’s arm and
earth
CAK = Lumped capacitance between the person’s arm
(and near portions of the body) and the keyboard
RA = Lumped resistance of the person’s arm’s discharge
path
LA = Lumped inductance of the person’s arm’s discharge
path
CF = Capacitance between person’s finger, hand, and the
keyboard
CK = Lumped capacitance of the keyboard to earth
RK = Lumped resistance of the keyboard earth ground path
LK = Lumped inductance of the keyboard earth ground path
Figure 4. Contact Discharge Model
40
TransGuard®
Application Notes: Motor and Relay Application Study
PURPOSE connected to the scope and one leg of the relay/motor coil;
the probe’s ground was connected to the other relay
A significant number of end customers have experienced coil/motor wire. The scope was triggered on the pulse and
failures of circuitry in and around low voltage relays and waveforms printed.
motors. Additionally, EMI problems have been associated
with running motors. When suppression was introduced into the circuit, it was
placed directly on the relay coils/motor lead wires. The
This study is aimed at evaluating how TransGuards can axial TransGuard and capacitors had a 19mm (3⁄4") total
reduce EMI from running motors and clamp transients lead length in each case. Upon careful consideration, it was
generated from relays and motors during power off. determined that this was a fairly common lead length for
such applications.
DESCRIPTION
Three different motors and two different relays were chosen SUMMARY
to represent the wide range of possible devices used by GEARED MOTOR
designers. Device choices were as follows:
The Cramer geared motor was tested while running (under
MOTORS load) to determine its “on state” noise as well as under
Cramer 8001 series Geared Motor loaded turn off conditions. Both TransGuards and ceramic
12V, 30rpm (4800 RPM armature speed) 170ma capacitors were tested to determine the level of protection
Start/Run Torque 30oz they offer.
Comair Rotron DC Biscut Fan - 24V, 480ma A 14V axial TransGuard provided the best protection during
running and turn off. The VA100014D300 TransGuard cut
Comair Rotron DC Biscut Fan - 12V, 900ma
the 60V unprotected turn off voltage spike to 30V. It also cut
RELAYS
the on state noise to 4.0V pk-pk due to its internal capaci-
Potter and Brumfield 24V Relay tance. The following is a summary of measured voltages
1
⁄3 HP 120V AC, 10A 240 VAC Rating (scope traces are shown in Figures 1, 1A, 2, 2A).
Potter and Brumfield 12V Relay
1
⁄3 HP 120V AC, 10A 240 VAC Rating Transient Transient Transient Transient
without with with with 14v
Test Condition Protection .1µF cap .01µF cap TransGuard
A Tektronix TDS 784A four channel 1GHz 4G S/s digitizing Geared motor at
storage scope was used to capture the -1⁄2 LI2 transient turn off 60V 32V 48V 30V
peak from the relays and motors. A x10 probe was Geared motor
during running 12V pk-pk 4.0V pk-pk 4.0V pk-pk 4.0V pk-pk
Tek Stop: 5.00MS/s 251 Acqs Tek Stop: 5.00MS/s 64 Acqs

[ T ] [ T ]
Fig. 1. Geared Motor Fig. 1A. Geared
Transient at Turnoff Motor Transient at
without protection Turnoff with 14 V
60 V Gear Motor 20 TransGuard 30 V 10
V/Division V/Division
1 1
Ch1 2.00 V M 10.0µs Ch1 -3.68 V Ch1 1.00 V M 10.0µs Ch1 -2.72 V
5 Jul 1996 06:00:39 5 Jul 1996 06:07:57
Tek Run: 5.00MS/s Sample Tek Stop: 5.00MS/s 147 Acqs
[ T ] [ T ]
Fig. 2. Geared Motor Fig. 2A. Geared
Running noise Motor Running with
T
without protection 14 V TransGuard
12 V pk-pk 2 4 V pk-pk 2 T
V/Division V/Division
1 1
Ch1 200 V M 100ns Ch1 364mV Ch1 200mV M 100ns Ch1 164mV
5 Jul 1996 05:07:06 5 Jul 1996 05:43:56
41
TransGuard®
BISCUT FAN Transient Transient Transient Transient
without with with with
The Comair 24V and 12V biscut fans were tested only for Motor Type Protection .1µF cap .01µF cap TransGuard
transients at turn off. Results of those tests are shown in 24V Fan 165V 120V 140V 65V(1)
the table at the right (as well as slope traces 3, 3A, 4, 4A). 12V Fan 60V 52V 64V 30V(2)
(1) VA100030D650 TransGuard / (2) VA100014D300 TransGuard
[ T ] [ T ]
Fig. 3. 24 V Biscut Fig. 3A. 24 V Biscut
Fan without protection Fan with 30 V
165 V Biscut 50 TransGuard
V/Division 65 V 50 V/Division
1 T 1
7 Jul 1996 04:03:28 7 Jul 1996 04:06:48

[ T ] [ T ]
Fig. 4. 12 V Biscut Fig. 4A. 12 V Biscut
Fan without protection Fan with 14 V
60 V 20 V/Division TransGuard
30 V 20 V/Division
1 1
T
T
7 Jul 1996 04:22:06 7 Jul 1996 04:27:56
42
TransGuard®
RELAYS Transient Transient Transient Transient
without with with with
The 12V and 24V relays were tested only for transients at Relay Type Protection .1µF cap .01µF cap TransGuard
turn off. The results of those tests are shown in the table at 24V 44V 24V 28V 28V(3)
the right (as well as scope traces 5, 5A, 6, 6A). 12V 105V 63V 100V 30V(4)
(3) VA100026D580 TransGuard / (4) VA100014D300 TransGuard

[ T ] [ T ]
Fig. 5. 24 V Relay Fig. 5A. 24 V Relay
Transient without Transient with 26 V
protection TransGuard
44 V 10 V/Division 10 V/Division
1 1
T
Ch1 1.00 V Ch2 100mV M 10.0µs Ch1 -1.30 V Ch1 1.00 V M 10.0µs Ch1 -520mV
7 Jul 1996 03:21:47 7 Jul 1996 03:45:31
[ T ] [ T ]
Fig. 6. 12 V Relay Fig. 6A. 12 V Relay
Transient without Transient with 14 V
protection TransGuard
105 V 50 V/Division 30 V 50 V/Division
1 1
T T
Ch1 5.00 V Ch2 100mV M 10.0µs Ch1 -3.6 V Ch1 5.00 V Ch2 100mV M 10.0µs Ch1 -3.0 V
7 Jul 1996 02:47:37 7 Jul 1996 02:50:00
CONCLUSIONS
TransGuards can clamp the wide range of voltages coming from small/medium motors and relays due to inductive
discharge. In addition, TransGuards capacitance can help reduce EMI/RFI. Proper selection of the TransGuards voltage is
critical to clamping efficiency and correct circuit operation.
43
TransGuard®
Application Notes: Multilayer Varistors In Automobile MUX Bus Applications
The current trend in automobiles is towards increased per- As the schematic in Figure 1 illustrates, the implementation
formance, comfort and efficiency. To achieve these goals, of MLV protection methods greatly simplifies circuit layout,
automobile companies are incorporating an ever increasing saves PCB space and improves system reliability. The MLV
array of electronics into cars. As the electronic content within offers many additional electrical improvements over
cars increases, auto manufacturers are utilizing multiplex the Zener/passive schemes. Among those advantages
bus designs to network all the sensors to a central point are higher multiple strike capability, faster turn on time and
(usually the engine control unit [ECU]). Multiplex lines save larger transient overstrike capability. Further clarification on
wiring harness weight and decrease the harness' complexity, the types of varistors compared to the performance of
while allowing higher communication speeds. However, Zener diodes follows.
the multiplex structure tends to increase the occurrence
and severity of Electromagnetic Interference (EMC) and CONSTRUCTION AND PHYSICAL
Electrostatic Discharge (ESD).
COMPARISON
Multilayer varistors (MLVs) are a single component solution for
auto manufacturers to utilize on multiplex nodes to eliminate The construction of Zinc Oxide (ZnO) varistors is a well
both ESD and EMC problems. MLVs also offer improved known, relatively straightforward process in which ZnO
reliability rates (FIT rates <1 failure/billion hours) and smaller grains are doped with cobalt, bismuth, manganese and
designs over traditional diode protection schemes. other oxides. The resulting grains have a Schottky barrier at
the grain interface and a typical grain breakdown voltage
(Vb) of approximately 3.6V per grain.
TYPICAL MUX NODE APPLICATION
Currently, there are two types of varistors. Single layer
There are a variety of SAE recommended practices for vehicle varistors (SLVs) - an older technology referred to as
multiplexing (J-1850, J-1939, J-1708, J-1587, CAN). Given "pressed pill," typically are larger, radial leaded components
the number of multiplexing specifications, it is easy to designed to handle significant power. Multilayer varistors
understand that bus complexity will vary considerably. (MLVs) are a relatively new technology packaged in true EIA
Each node has an interface circuit which typically consists SMT case sizes.
of a terminating resistor (or sometimes a series limiting Beyond the ZnO material system and grain breakdown
resistor), back to back Zener diodes (for over voltage similarity, MLVs and SLVs have little in common. That is, to
protection) and an EMC capacitor. Such a method is design a low voltage SLV, the grains must be grown as large
compared to that of a multilayer varistor in Figure 1. as possible to achieve a physically large enough part to be
handled in the manufacturing process. Typically it is very
XCVR BUS XCVR BUS difficult to obtain a consistent grain size in a low voltage
SLV process.
EMC The electrical performance of SLV is affected by inconsistent
CAP
grain size in two ways. First, low voltage SLVs often exhibit
an inconsistent V b and leakage current (I L) from device
MLV PROTECTION METHOD DIODE PROTECTION METHOD to device within a particular manufacturing lot of a given
SINGLE COMPONENT SOLUTION THREE COMPONENT SOLUTION rating. This contributes to early high voltage repetitive strike
wear out.
Figure 1. Comparison of past node protection methods to Secondly, SLVs with similar voltage and energy ratings as
MLV node protection methods. MLVs typically exhibit a lower peak current capability due in
To more clearly understand the functional structure of a part to increased resistance of the long current path of the
MLV, see the equivalent electrical model shown in Figure 2. large grains. This contributes to early repetitive high current
wear out.
• MULTIPLE ELECTRODES YIELD A CAPACITANCE At higher voltages, the grain size variations within SLVs play
• THE CAPACITANCE CAN BE USED IN DECOUPLING a much smaller percentage role in Vb and leakage current
• CAPACITANCE CAN BE SELECTED FROM 30pF TO 4700pF values. As a result, SLVs are the most efficient cost effective
way to suppress transients in high voltages (e.g., 115 VAC,
LB BODY INDUCTANCE 220 VAC).
LB CE DEVICE CAPACITANCE
RV VOLTAGE VARIABLE RESISTOR
RI INSULATION RESISTANCE
RV
RI
CE
Figure 2. TransGuard Equivalent Model.
44
TransGuard®
Application Notes: Multilayer Varistors In Automobile MUX Bus Applications
MLV MANUFACTURE High current repetitive strikes are represented by 8x20µs
150A waveforms. A comparison between MLVs, SLVs and
The construction of a MLV was made possible by employing SiTVS is shown in Figures 3A, B, C respectively.
a variety of advanced multilayer chip capacitors (MLCC)
manufacturing schemes coupled with a variety of novel and
proprietary ZnO manufacturing steps. In the MLCC process,
SILICON TVS MANUFACTURE
thin dielectrics are commonly employed to obtain very large The construction of a silicon TVS departs dramatically
capacitance values. It is that capability to design and manu- from that of either single layer varistor or multilayer varistor
facture multilayer structures with dielectric thicknesses of ≤1 construction. Devices are generally produced as Zener
mil that allows MLVs to be easily made with operating/ diodes with the exception that a larger junction area
working voltages (V wm) as low as 3.3V (for use in next is designed into the parts and additional testing was likely
generation silicon devices). performed. After the silicon die is processed in accordance
Once a particular working voltage has been determined to standard semi-conductor manufacturing practice, the
(by altering the ZnO dielectric thickness), the multilayer TVS die is connected to a heavy metal lead frame and
varistor's transient energy capability is determined by the molded into axial and surface mount (SMT) configuration.
number of layers of dielectric and electrodes. It is, therefore,
generally easy to control the grain size and uniformity within MLVs COMPARED TO DIODES
a MLV due to the relative simplicity of this process. The response time for a silicon diode die is truly sub-
MLVs exhibit capacitance due to their multiple electrode nanosecond. The lead frame into which the die is placed
design and the fact that ZnO is a ceramic dielectric. and the wire bonds used for die connections introduce a
This capacitance can be utilized with the device’s series significant amount of inductance. The large inductance of
inductance to provide a filter to help limit EMI/RFI. The this packaging causes a series impedance that slows the
equivalent model of a MLV is shown in Figure 2. response time of SiTVS devices. A best case response time
MLVs are primarily used as transient voltage suppressors. In of 8nS on SOT23 and a 1.5nS to 5nS response time on
their “on” state, they act as a back-to-back Zener, diverting SMB and SMC products respectively are rather typical.
to ground any excess, unwanted energy above their clamp- MLVs turn on time is <7nS. MLVs turn on time is faster than
ing voltage. In their “off” state, they act as an EMC capacitor SiTVS and that fast turn on time diverts more energy and
(capacitance can be minimized for high speed applications). current away from the IC than any other protection device
A single MLV, therefore, can replace the diode, capacitor available.
and resistor array on multiplex node applications.
Any TVS will see a large number of transient strikes over its CONCLUSION
lifetime. These transient strikes will result from different The technology to manufacture MLVs exists and allows the
events such as well known ESD HBM, IC MM, alternator manufacture of miniature SMT surge suppressors. MLVs do
field decay, load dump models and uncontrolled random not have the wear out failure mode of first generation (single
events. It is because of the repetitive strikes that all TVS layer) varistors. In fact, MLVs exhibit better reliability num-
suppressors should be tested for multiple strike capability. bers than that of TVS diodes. MLVs are a viable protection
Typically, a TVS will fail due to high voltage, high current or device for auto multiplex bus applications.
over-energy strikes.
High voltage repetitive strikes are best represented by Written by Ron Demcko
IEC1000-4-2 8kV waveforms. MLVs demonstrate a greatly Originally printed in EDN PRODUCTS EDITION December
superior capability to withstand repetitive ESD high voltage 1997 by CAHNERS PUBLISHING COMPANY
discharge without degradation.
150 AMP Current Repetitive Strike Comparison
Repetitive Strike Performance Repetitive Strike Performance Repetitive Strike Performance
8X20 µS 150A 8X20 µS 150A 8X20 µS 150A
1200
1000
800
1000
800
800 600
600
600
400
400
400
200 200
200
5.5v
8v 18.8v
0 0 14v 0 15v
18v 18v 13v
0.1 26v 0.1 0.17 0.2 22v 0.06 12v
0.3 30v 0.25 0.3 0.4 28v
Vwm 11v
0.4 48v 0.5 0.6 0.8 48v 0.84
0.9
1.2 60v Vwm 0.9 1.0 1.2
56v 5.0v Vwm
2.0 Energy (J) 2.1
Energy (J) Energy (J)
Figure 3A. Multilayer Varistor. Figure 3B. Single Layer Varistor. Figure 3C. Silicon TVS.
45
TransGuard ®
PACKAGING
• Chips
• Axial Leads
46
TransGuard®
Packaging - Chips / Embossed Carrier Configuration 8mm Tape Only
8mm Embossed Tape

Metric Dimensions Will Govern
CONSTANT DIMENSIONS
Tape Size D0 E P0 P2 T Max. T1 G1 G2
+0.10
8.4 -0.0 1.75 ± 0.10 4.0 ± 0.10 2.0 ± 0.05 0.600 0.10 0.75 0.75
+0.004
(0.059 -0.0 ) (0.069 ± 0.004) (0.157 ± 0.004) (0.079 ± 0.002) (0.024) (0.004) (0.030) (0.030)
8mm
Max. Min. Min.
See Note 3 See Note 4
VARIABLE DIMENSIONS
Tape Size B1 D1 F P1 R T2 W A0 B0 K0
Max. Min. Min.
See Note 6 See Note 5 See Note 2
+0.3
4.55 1.0 3.5 ± 0.05 4.0 ± 0.10 25 2.5 Max. 8.0 -0.1+.012
8mm (0.179) (0.039) (0.138 ± 0.002) (0.157 ± 0.004) (0.984) (0.098) (0.315 -0.004) See Note 1
NOTES:
1. A0, B0, and K0 are determined by the max. dimensions to the ends of the terminals extending from the component body and/or the body dimensions of the component.
The clearance between the end of the terminals or body of the component to the sides and depth of the cavity (A0, B0, and K0) must be within 0.05 mm (0.002) min. and
0.50 mm (0.020) max. The clearance allowed must also prevent rotation of the component within the cavity of not more than 20 degrees (see sketches C & D).
2. Tape with components shall pass around radius “R” without damage.
3. G1 dimension is the flat area from the edge of the sprocket hole to either the outward deformation of the carrier tape between the embossed cavities or to the edge of
the cavity whichever is less.
4. G2 dimension is the flat area from the edge of the carrier tape opposite the sprocket holes to either the outward deformation of the carrier tape between the embossed
cavity or to the edge of the cavity whichever is less.
5. The embossment hole location shall be measured from the sprocket hole controlling the location of the embossment. Dimensions of embossment location and hole
location shall be applied independent of each other.
6. B1 dimension is a reference dimension for tape feeder clearance only.
47
TransGuard®
Packaging - Chips / Punched Carrier Configuration 8mm Tape Only
8mm Punched Tape

Metric Dimensions Will Govern
CONSTANT DIMENSIONS
Tape Size D0 E P0 P2 T1 G1 G2 R MIN.
+0.1
8mm 1.5 -0.0 1.75 ± 0.10 4.0 ± 0.10 2.0 ± 0.05 0.10 0.75 0.75 25
+0.004
(0.059 )
-0.000 (0.069 ± 0.004) (0.157 ± 0.004) (0.079 ± 0.002) (0.004) (0.030) (0.030) (0.984)
Max. Min. Min. See Note 2
VARIABLE DIMENSIONS
Tape Size P1 F W A0 B0 T
8mm 4.0 ± 0.10 3.5 ± 0.05 8.0 +0.3
-0.1 See Note 1 See Note 3
(0.157 ± 0.004) (0.138 ± 0.002) (0.315 +0.012
-0.004 )
NOTES:
1. A0, B0, and T are determined by the max. dimensions to the ends of the terminals extending from the component body and/or the body dimensions of the component. The
clearance between the ends of the terminals or body of the component to the sides and depth of the cavity (A0, B0, and T) must be within 0.05 mm (0.002) min. and 0.50 mm
(0.020) max. The clearance allowed must also prevent rotation of the component within the cavity of not more than 20 degrees (see sketches A & B).
2. Tape with components shall pass around radius “R” without damage.
3. 1.1 mm (0.043) Base Tape and 1.6 mm (0.063) Max. for Non-Paper Base Compositions.
REEL DIMENSIONS
Tape A B* C D* N W1 W2 W3
Size Max. Min. Min. Min. Max.
7.9 Min.
8mm 330 1.5 13.0±0.20 20.2 50 8.4 +1.0
–0.0 14.4 (0.311)
(12.992) (0.059) (0.512±0.008) (0.795) (1.969) (0.331 +0.060
–0.0 ) (0.567) 10.9 Max.
(0.429)
Metric dimensions will govern.
English measurements rounded and for reference only.
BAR CODE LABELING STANDARD

AVX bar code labeling is available and follows latest version of EIA-556.
48
TransGuard®
PACKAGING - AXIAL LEADS / TAPE AND REEL
CLASS I / RS-296
5mm ± 0.5mm
A. (0.200" ± 0.020")
52.4mm ± 1.5mm
B*. (2.063" ± 0.059") D1 D2
6.35mm ± 0.4mm
C. (0.250" ± 0.016")
1.4mm F
D1-D2. (0.055" MAX.)
1.2mm C
E. (0.047" MAX.)
1.6mm E
F. (0.063" MAX.)
356mm
G. (14.00")
76mm
H. (3.000") A
25.4mm
I. (1.000")
84mm B
J. (3.300")
70mm
K. (2.750")
Optional
Design H K Leader Tape: 300mm min. (12")
Splicing: Tape Only
Missing Parts: 0.25% of component count max.-
No consecutive missing parts
TRANSIENT VOLTAGE TESTING

AVX TECHNICAL SERVICES AND TESTING FACILITY
The AVX test lab has the capability to perform ESD and a variety of other fast wave form tests on finished assemblies, sub-
assemblies and components for performance to ESD per IEC 1000-4-2 contact/air discharge and a number of other transient
voltage specifications.
Components can be tested for: Finished assemblies and subassemblies can be tested for:
Pre/post current draw System functionality under repetitive ESD strikes
Pre/post output driving voltage Pre/post output voltages
Pre/post receiver sensitivity levels Pre/post receiver sensitivity levels
TVS turn on time characterization
For details on specific lab test capabilities and costs, contact AVX.
49
USA EUROPE ASIA-PACIFIC
AVX Myrtle Beach, SC AVX Limited, England AVX/Kyocera, Singapore

Corporate Offices European Headquarters Asia-Pacific Headquarters
Tel: 843-448-9411 Tel: ++44 (0)1252 770000 Tel: (65) 258-2833
FAX: 843-626-5186 FAX: ++44 (0)1252 770001 FAX: (65) 350-4880
AVX Northwest, WA AVX S.A., France AVX/Kyocera, Hong Kong

Tel: 360-669-8746 Tel: ++33 (1) 69.18.46.00 Tel: (852) 2-363-3303
FAX: 360-699-8751 FAX: ++33 (1) 69.28.73.87 FAX: (852) 2-765-8185
AVX North Central, IN AVX GmbH, Germany - AVX AVX/Kyocera, Korea

Tel: 317-848-7153 Tel: ++49 (0) 8131 9004-0 Tel: (82) 2-785-6504
FAX: 317-844-9314 FAX: ++49 (0) 8131 9004-44 FAX: (82) 2-784-5411
AVX Northeast, MA AVX GmbH, Germany - Elco AVX/Kyocera, Taiwan

Tel: 508-485-8114 Tel: ++49 (0) 2741 2990 Tel: (886) 2-2696-4636
FAX: 508-485-8471 FAX: ++49 (0) 2741 299133 FAX: (886) 2-2696-4237
AVX Mid-Pacific, CA AVX srl, Italy AVX/Kyocera, China

Tel: 408-436-5400 Tel: ++390 (0)2 614571 Tel: (86) 21-6249-0314-16
FAX: 408-437-1500 FAX: ++390 (0)2 614 2576 FAX: (86) 21-6249-0313
AVX Southwest, AZ AVX s.r.o., Czech Republic AVX/Kyocera, Malaysia

Tel: 602-539-1496 Tel: ++420 (0)467 558340 Tel: (60) 4-228-1190
FAX: 602-539-1501 FAX: ++420 (0)467 558345 FAX: (60) 4-228-1196
Elco, Japan
AVX South Central, TX
Tel: 045-943-2906/7
Tel: 972-669-1223
FAX: 045-943-2910
FAX: 972-669-2090
Kyocera, Japan - AVX
AVX Southeast, NC
Tel: (81) 75-604-3426
Tel: 919-878-6357 FAX: (81) 75-604-3425
FAX: 919-878-6462
Kyocera, Japan - KDP
AVX Canada Tel: (81) 75-604-3424
Tel: 905-564-8959 FAX: (81) 75-604-3425
FAX: 905-564-9728
Contact:
A KYOCERA GROUP COMPANY
http://www.avxcorp.com S-TTVS00M600-C

Avx Transguard /Staticguard/Multiguard Multilayer Ceramic Transient Voltage Suppressors

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A KYOCERA GROUP COMPANY

TransGuard Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Part Number Identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Available TransGuard Ratings (By Case Size) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Performance Characteristics (TransGuards). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

TransGuard Typical Circuits Requiring Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

TransGuard Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Packaging - Axial Leads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

AVX Technical Services and Testing Facility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

V C 1206 05 D 150 R P V A 1000 05 D 150 R L

AVX Working Breakdown Clamping Peak Transient

Note: Details of Performance Curves shown on page 4.

Units Volts Volts Volts Amp Joules pF nH

AVX Working Breakdown Clamping Peak Transient

Units Volts Volts Volts Amp Joules pF nH

AVX Working Breakdown Clamping Peak Transient

Units Volts Volts Volts Amp Joules pF nH

VC12LC18A500 _ _ See pages 14-15 for specification and performance details.

AVX Working Breakdown Clamping Peak Transient

Units Volts Volts Volts Amp Joules pF nH

Dimensions: Millimeters (Inches)

AVX Working Breakdown Clamping Peak Transient

VA10LC18A500 _ L See pages 14-15 for specification and performance details.

VI Curves - 3.3V and 5.6V Products

VI Curves - 9V, 12V, and 14V Products

3.3V, 0.1J 3.3V, >0.1J 5.6V, 0.1J 5.6V, >0.1J 30

VI Curves - 18V and 26V Products

80 9V, 0.1J 12V, 0.1J 14V, 0.1J 14V, >0.1J

VI Curves - 30V, 48V, and 60V Products

18V, 0.1J 18V, >0.1J 26V, 0.1J 26V, >0.1J

Temperature Dependence of Voltage TYPICAL ENERGY DERATING VS TEMPERATURE

TYPICAL BREAKDOWN AND CLAMPING VOLTAGES

TYPICAL CAPACITANCE VS TEMPERATURE

Repetitive Peak Current Strikes Repetitive Peak Current Strikes

Change in Breakdown Voltage (%)

Repetitive Peak Current Strikes Repetitive Peak Current Strikes

PART NUMBER IDENTIFICATION (See page 2 for details)

Test Condition <10µA 8/20µS† 8/20µs 0.5Vrms @:

Clamping Voltage (V)

VC08LC18A500 Capacitance Histogram StaticGuard S21

VC12LC18A500 Capacitance Histogram VI Curves - StaticGuard Products

SIZE: 0508 SIZE: 0612

ELECTRICAL CHARACTERISTICS PER ELEMENT

MG052S09A200 _ _ 9.0 10.0 - 14.0 20 30 0.1 550 <1.0

MG052S14A300 _ _ 14.0 14.7 - 20.3 30 30 0.1 425 <1.0

MG052S18A400 _ _ 18.0 20.4 - 28.0 40 30 0.1 225 <1.0

MG052L18X500 _ _ ≤18.0 N/A 50 20 0.05 <75 <1.0

MG064S09A200 _ _ 9.0 10.0 - 14.0 20 30 0.1 550 <1.0

MG064S14A300 _ _ 14.0 14.7 - 20.3 30 30 0.1 425 <1.0

MG064S18A400 _ _ 18.0 20.4 - 28.0 40 30 0.1 225 <1.0

MG064L18X500 _ _ ≤18.0 N/A 50 20 0.05 <75 <1.0

BW C/L BW C/L OF CHIP

PART DIMENSIONS mm (inches) PART DIMENSIONS mm (inches)

PAD LAYOUT D PAD LAYOUT D

0.89 1.27 2.16 0.46 0.76 C

PART NUMBERING SYSTEM

STYLE CLAMPING VOLTAGE

TYPICAL PERFORMANCE CURVES

5.6V 9.0V and 14.0V

and Clamping (VC ) Voltages

Typical Breakdown (VB )

TRANSIENT VOLTAGE SUPPRESSORS

TYPICAL PERFORMANCE CURVES