Chaper 4 PV Output Characteritics and Mathematical Models: Presentation #1

Chaper 4
PV Output Characteritics and Mathematical Models

Presentation #1
Dr. Weidong Xiao
School of Electrical and Information Engineering

University of Sydney, Australia
2017
c
Photovoltaic Power System: Modelling, Design, and Control 1 / 26

Outline
1 PV output characteristics
2 Equivalent circuits for PV modeling

Mathematical model for diodes
3 Ideal single diode model (ISDM)

Understanding PV cell specification
Parameter identification based on the STC
Variation with irradiance and temperature
Model implementation of ISDM in response to environmental variation
4 Model accuracy and performance indices

Model inaccuracy of the ISDM

PV Output Characteristics and Three Important Points
The I-V and P-V curves are commonly used to illustrates the output of PV
cells, modules, strings, or array.
Three important points refer to the open circuit voltage, short circuit current
and maximum point point under one specific environmental condition.
Isc Pmpp P−V

Impp MPP
(A)
iPV (A)
PV
p
I−V
MPP
0 Vmpp Voc 0 Vmpp Voc
vPV (V) vPV (V)

Respond to the irradiance
I-V curves or P-V curves should respond to the irradiance

Maximum power points also respond the variation.
A PV simulation model should be able to represent the PV output
characteristics regarding to the variation.
4
8 1000 W/m2
7 3.5 800 W/m2
3 600 W/m2
6
200 W/m2
5 2.5
pPV (W)
iPV (A)
1000 W/m2
4 2
800 W/m2
3 600 W/m2 1.5
2
2 200 W/m 1
1 0.5
0 0
0 0.2 0.4 0.6 0 0.2 0.4 0.6
vPV (V) vPV (V)

Respond to the temperature
I-V curves or P-V curves should respond to the temperature

Maximum power points also respond the variation.
A PV simulation model should be able to represent the PV output
characteristics regarding to the variation.
5
−25 oC
8 0 oC
4
25 oC
6 50 oC
3
pPV (W)
(A)
PV
4
i
2
−25 oC
2 0 oC 1
o
25 C
50 oC
0 0
0 0.2 0.4 0.6 0 0.2 0.4 0.6
vPV (V) vPV (V)

Equivalent circuits for modeling
Computer simulation is an important tool to reproduce the behavior of PV

power systems in response to various environmental conditions and load
disturbances.
The common PV cell is constructed by a large area of p-n junction that is
made of silicon.
A common diode is also made of crystalline silicon and is formed by the p-n
junction.
With a current source, the diode model

is used to represent the output
characteristics of crystalline-based
photovoltaic cells.
The shunt resistor and series resistor
are included to represent non-ideal
factors.
Complete single diode model (CSDM)
and double diode model (DDM).
Mathematical model for diodes
The p-n junctions are elementary “building blocks” of

most semiconductor electronic devices such as diodes,
transistors, solar cells, LEDs, and integrated circuits.
Based on the Shockley theory, the I-V characteristics of
the p-n junction diode is nonlinear that can be
qvd
represented by the exponential form:

id = is e kTc An −1
Two unknown parameters: is and An in the model.
Constants and variables
Symbols Term Definition Value / Unit
k Boltzman constant 1.38 × 10−23 J/K
q Magnitude of charge 1.6 × 10−19 C
id Diode current is the model variable A
vd Diode voltage is the model variable V
is Diode reverse bias saturation current A
TC Device temperature is measurable ◦K
An Diode ideality factor in the single diode model n/a

Ideal single diode model
The ideal single diode model (ISDM) can be formed by a current source in
parallel with a diode.
It can be considered the simplest single diode model since the series
resistance and shunt resistance are taken out of consideration.
Three independent constraints should be applied to identify three unknown
parameters.
Three unknown parameters:

photon current (iph )
diode reverse bias saturation current (is )
the diode ideality factor (An ).
The ISDM is also named as the
three-parameter model.
qvpv
A common practice to identify the PV model

ipv = iph − is e kTc A n −1
parameters is based on the given data from
PV product manufactures. | {z }
id
PV cell specification
Basic information
Manufacturer Model Cell material Dimension
MOTECH IM156B3-164 Multi-crystalline 156mm × 156mm ± 0.5mm
Electrical performance at STC
Efficiency PMPP IMS VMS ISCS VOCS
16.4 % 3.99 W 7.85 A 0.509 V 8.38 A 0.614 V
Temperature coefficients
αT βT γT
0.06 %/o C −0.33 %/o C −0.40 %/o C
Correction factor based on irradiance
Ea voltage correction current correction
1000 W /m2 1.000 V/V 1.000 A/A
800 W /m2 0.989 V/V 0.798 A/A
600 W /m2 0.972 V/V 0.597 A/A
200 W /m2 0.911 V/V 0.192 A/A

At the STC, three unknown parameters (iph ,

ISS , and An ) are considered as the constants
that should be identified for the ISDM.
When the terminal of the equivalent circuit is
shorted, the diode current, id , is equal to qvpv
zero, then iph = ISCS , which becomes known. ipv = iph − is e kT A
c n −1
Two unknown parameters of ISS and An are | {z }

id
remained, which can be identified by the two
conditions:
Maximum power point
Open circuit condition
VMS
VOCS V A

kT IMS = ISCS −ISS e TCS n −1
ISCS V
= ISS e TCS An − 1 , VTCS = CS
q
VTCS called as thermal voltage.
Solving the nonlinear equation (1),

The two constraints from the open circuit
the Ainv becomes known, and then
condition and the MPP can be combined
An .
to form one equation:
All constants in (1) are calculated
VMS 1 as:
e VTCS An − 1 I
= 1 − MS VMS
VOCS 1 ISCS C1 = (2a)
VTCS
V
e TCS A n −1
VOCS
C2 = (2b)
A new variable of Ainv is defined as the VTCS
reciprocal of An , Ainv = 1/An . IMS
Thus, the equation with the one C3 = 1 − (2c)
ISCS
unknown, Ainv , can be organized into:
f (Ainv ) = eC1 Ainv − C3 eC2 Ainv = 0 (1) Nonlinear equations can be solved
by many numerical techniques.

Newton-Raphson method
The Newton-Raphson method, or simply Newton method, is a numerical

technique to solve nonlinear equations.
The derivation of f (Ainv ), as expressed in (3), is required for the
Newton-Raphson iteration.
f 0 (Ainv ) = C1 Ainv eC1 Ainv − C3 C2 Ainv eC2 Ainv (3)
The solver requires an initial estimate of the root of (1), which is defined as
the value of Ainv (0).
Back to the fundamental of the p-n junction, the ideality factor (An ) usually
ranges from 1 to 2.
Therefore, the value of Ainv (0) can be assigned to 0.7 as the initial point.
The numerical iteration can start with initial estimation and continue by the
updating procedure, (4).
f [Ainv (n)]
Ainv (n + 1) = Ainv (n) − (4)
f 0 [Ainv (n)]
Flowchart of the Newton method used for parameter identification
The value of Ainv is continuously

updated until the output of f (Ainv ) is
close to zero.
The tolerance is defined by the
maximum error (Err = 10−6 ) .
If the constraints is satisfied, the
iteration stops and the value of (An )
is finalized.
The identification fails if the
maximum iterative number
(N = 100) is reached.
With the known value of An , the
another parameter, ISS , at STC, can
be determined by:
ISCS
ISS =
e 2 Ainv −
C 1
Variation with irradiance and temperature
Based on the given product data, the current and voltage characteristics at
STC can be represented by
ipv = 8.38 − 8.17 × 10−7 × (e26.29Vpv − 1)
The equation is only valid for the STC.

The I-V characteristics of simulation models should respond to the variation in
both solar irradiance and cell temperature.
The PV cell manufacturer usually provide the correction coefficients, which
are based on experimental evaluation.
The temperature coefficients for PV output current, voltage, and power are
symbolized as αT , βT , and γT , respectively.
Example is shown as:
αT for current βT for voltage γT for power
0.06 %/o C −0.33 %/o C −0.40 %/o C

Photon current in response to temperature and irradiance
The short circuit current is mostly proportional to the irradiance value.

When the operating condition is deviated from the STC, the value of iph should
be updated by:
Ea
iph (Ea , ∆T ) = I (1 + αT ∆T )
ESTC SCS
Ea represents the instant irradiance value.
∆T symbolizes the difference between the cell temperature TC from the
temperature at the STC, TCS , which is rated as 25 ◦ C or 298 ◦ K.
The constants, ISCS and ESTC refer to the short circuit current at the STC and
the irradiance level, 1000W /m2 at the STC.
Since αT is a positive parameter, the photon current increases or decreases
with the same direction of the cell temperature.
When the short current at STC is available, the photon current can always be
derived to accommodate the variation in irradiance and temperature.

Voltage in response to temperature and irradiance
The open-circuit voltage corresponding to the variation of irradiance and cell

temperature can be expressed as:
vOC (Ea , ∆T ) = VOCS (1 + βT ∆T )νT
Regarding to the cell temperature variation, the Ea νT

correction factor refers to the given value βT . 1000 W /m2 1.000 V/V
800 W /m2 0.989 V/V
The irradiance coefficient on voltage, νT , is
600 W /m2 0.972 V/V
nonlinear, which is typically given in a table and can
be expressed by: 200 W /m2 0.911 V/V
νT (Ea ) = CE1 Ea2 + CE2 Ea + CE3
Based on the data , CE(1−3) , can be identified by the software tool, such as
the ‘fit’ function in MATLAB.
νT (Ea ) = −1 × 10−7 Ea2 + 2.315 × 10−4 Ea + 0.8688

Voltage in response to temperature and irradiance
The polynomial curve fitting for the voltage correction generally shows a good
match with the product coefficients.
Therefore, the open-circuit voltage corresponding to the variation of irradiance
and cell temperature can be corrected
1
0.98
0.96
νT (V/V)
0.94
0.92
Fitted cubic curve
Product data
0.9
200 300 400 500 600 700 800 900 1000
Irradiance Ea (W/m2)

Model implementation of ISDM in response to environmental variation
The values of iph (Ea , ∆T ) and voc (Ea , ∆T )) are estimated by

vOC (Ea , ∆T ) = VOCS (1 + βT ∆T )νT
Ea
iph (Ea , ∆T ) =
I (1 + αT ∆T )
ESTC SCS
The value of the diode saturation current is (Ea , ∆T ) can be determined at the
open-circuit condition, and can be updated according to the instant values of
voc (Ea , ∆T )) and iph (Ea , ∆T ).
iph (Ea , ∆T )
is (Ea , ∆T ) =
qvOC (Ea , ∆T )
e kTc An −1
The I-V characteristic equation of a PV cell can be realized corresponding to
the variation of the solar irradiance and cell temperature.
qvpv
ipv = iph (Ea , ∆T ) − is (Ea , ∆T ) e kT A
c n −1
| {z }
id (Ea ,∆T )
Flowchart for simulating PV cell output
The flowchart for the real-time simulation

can be developed and based on the
ISDM.
Two environmental parameters are
considered as the inputs including the
instant values of the irradiance, Ea , and
the cell temperature, TC .
The PV cell current, ipv , is updated every
cycle as the output, which is based on
the variation of the cell output voltage,
vpv , and the environmental conditions.
The variables, iph (Ea , ∆T ), vOC (Ea , ∆T ),
and is (Ea , ∆T ) can be estimated in real
time.
The ideality factor An can be considered
as a constant when its value is identified
in offline.
Model accuracy and performance indices
s
The model accuracy can be measured and ṼOCS
DOC = ( − 1)2
based on the standard test condition (STC) since VOCS
the manufacturer’s data are available for the
comparison and verification. where ṼOCS and VOCS represent
the values of the open-circuit
The difference of the open-circuit voltage
voltage that are generated from
between the model output and the product data
the simulation model and the
can be quantified by the performance index,
product data, respectively.
DOC .
s
The short-circuit current provides the reference
Ĩ
of the upper current limit for rating the DSC = ( SCS − 1)2
ISCS
over-current protect devices, cable, and DC
disconnects. where ĨSCS and ISCS represent
The DSC is defined as the performance index to the values of the short-circuit
indicate how accurate of the simulation model current that are generated from
output to represent the short-circuit current from the simulation model and the
the product data. product data, respectively.

Modeling accuracy of the MPP is important since it represents power rating.

The value and location of the modeled maximum power point (MPP) should
be compared with the actual product outputs.
The distance from the true MPP in the power-voltage (P-V) plot can be used
as the performance index to quantify the modeling accuracy.
The true MPP location is normalized as 1 and 1, which represent product data
of the maximum power (PMPP ) and the corresponding PV voltage (VMS ),
respectively.
The distance from the true MPP is normalized and calculated as:
s
P̃MPP ṼMPP
DMPP = ( − 1)2 + ( − 1)2
PMPP VMS
where P̃MPP and ṼMPP represent the value of maximum power and the
corresponding MPP voltage, respectively, which are generated by PV model.
Therefore, the value of DMPP is used as the performance index to indicate
how accurate of the simulation model output to represent the true MPP.
The performance indices of DOC , DSC , DMPP are defined for the case that the
available information is based on product datasheets, which provide the data
for the open circuit, short circuit, and MPP.
When a complete data set can be available from either experimental
measurement or manufacturer support to represent the full I-V curve of a
specific PV product, additional performance index can be applied to illustrate
the complete curve fitting accuracy.
Using the PV cell voltage as the reference, the difference of PV current
between the model output with the experimental measurement can be
calculated by way of the root-mean-square deviation (RMSD).
The value of RMSD is computed as the the square root of the mean square
error and mathematically expressed as
s
PN 2
j=1 (Ĩj − Ij )
RMSD(I) =
N
where Ĩj represents the current sample of the model output and Ij represents
the current sample of the actual value. “N”is the number of samples.
Similarly, RMSD for the power deviation can be calculated as:

s
PN 2
j=1 (P̃j − Pj )
RMSD(P) =
N
where P̃j represents the power sample of the model output and Pj represents
the power sample of the actual value.
The RMSD is not an uniform performance index to compare various PV cells
since the output current rating of solar cells varies greatly from each other due
to the difference in size and making material.
The relative measurement allows different solar cells can be compared under
the same platform even if their power capacities are widely different.
The measure of normalized root mean-square deviation (NRMSD) is also
recommended to quantify the modeling accuracy.
RMSD(I)
NRMSD(I) =
ISCS
where ISCS is the short circuit current at STC, which represents the reference
base of the photovoltaic current.
NRMSD provides a uniform performance index for comparing modeling

accuracy among various solar cells and different modeling techniques.
Similarly, the NRMSD can be calculated and based on the power deviation:
RMSD(P)
NRMSD(P) =
PMPP
where PMPP is the maximum power at STC, which represents the reference
base of the photovoltaic output power.
The performance index discussed above is based on the STC, which is a
common platform for evaluating all PV cell product and simulation model
performance.
Furthermore, the data at STC are readily available from product
manufacturers for quantitative comparison.
The performance indices, such as DOC , DSC , DMPP and NRMSD can be
applied to evaluate model accuracy based on the test condition different from
the STC.
Reliable data are essential for advanced and fair performance analysis when
the variation of irradiance and temperature is considered.
The true MPP point of (0.509V, 7.85A) that is provided by the product
datasheet. But the modelled MPP can be identified at the point of (0.512V,
7.81).
The modelled MPP by ISDM is deviated from the product data, as shown in
zoom-in figure.
8 P−V
4.06 Modeled MPP
7.95 Datasheet MPP
4.04
7.9 4.02
pPV (W)
iPV (A)
7.85 4
3.98
7.8
3.96
7.75 I−V
3.94
Modeled MPP
7.7 Datasheet MPP 3.92
0.5 0.505 0.51 0.515 0.5 0.505 0.51 0.515
vPV (V) vPV (V)

Following the modelling process using the ISDM, there is no error at the point
of the short circuit and open circuit since both constraints are included for the
parameter identification. Therefore, the performance indices of DOC and DSC
are not concerned for the ISDM.
The constraint for the MPP is based on the condition that the model-produced
I-V curve passes through the MPP that is given by the manufacturer
datasheets.
In fact, the ISDM modeling process does not limit the MPP given by product
datasheet to be the extreme value appearing in the P-V function.
Thus, it is normal that the deviation is always presented between the model
claimed and the datasheet MPP.
In the modeling example, the value of DMPP is calculated as 0.0059.
The major disadvantage of the ISDM is the presence of the non-zero value of
DMPP .
More comprehensive models are needed when the DMPP becomes a concern.

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Chaper 4

PV Output Characteritics and Mathematical Models

Dr. Weidong Xiao

School of Electrical and Information Engineering

Photovoltaic Power System: Modelling, Design, and Control 1 / 26

2 Equivalent circuits for PV modeling

3 Ideal single diode model (ISDM)

4 Model accuracy and performance indices

Photovoltaic Power System: Modelling, Design, and Control 2 / 26

Isc Pmpp P−V

Photovoltaic Power System: Modelling, Design, and Control 3 / 26

I-V curves or P-V curves should respond to the irradiance

Photovoltaic Power System: Modelling, Design, and Control 4 / 26

I-V curves or P-V curves should respond to the temperature

Photovoltaic Power System: Modelling, Design, and Control 5 / 26

Computer simulation is an important tool to reproduce the behavior of PV

With a current source, the diode model

The p-n junctions are elementary “building blocks” of

An Diode ideality factor in the single diode model n/a

Three unknown parameters:

Photovoltaic Power System: Modelling, Design, and Control 9 / 26

At the STC, three unknown parameters (iph ,

Two unknown parameters of ISS and An are | {z }

Solving the nonlinear equation (1),

Photovoltaic Power System: Modelling, Design, and Control 11 / 26

The Newton-Raphson method, or simply Newton method, is a numerical

f 0 (Ainv ) = C1 Ainv eC1 Ainv − C3 C2 Ainv eC2 Ainv (3)

The value of Ainv is continuously

ipv = 8.38 − 8.17 × 10−7 × (e26.29Vpv − 1)

The equation is only valid for the STC.

Photovoltaic Power System: Modelling, Design, and Control 14 / 26

The short circuit current is mostly proportional to the irradiance value.

Photovoltaic Power System: Modelling, Design, and Control 15 / 26

The open-circuit voltage corresponding to the variation of irradiance and cell

vOC (Ea , ∆T ) = VOCS (1 + βT ∆T )νT

Regarding to the cell temperature variation, the Ea νT

νT (Ea ) = −1 × 10−7 Ea2 + 2.315 × 10−4 Ea + 0.8688

Photovoltaic Power System: Modelling, Design, and Control 16 / 26

Photovoltaic Power System: Modelling, Design, and Control 17 / 26

The values of iph (Ea , ∆T ) and voc (Ea , ∆T )) are estimated by

The flowchart for the real-time simulation

Photovoltaic Power System: Modelling, Design, and Control 20 / 26

Modeling accuracy of the MPP is important since it represents power rating.

Similarly, RMSD for the power deviation can be calculated as:

NRMSD provides a uniform performance index for comparing modeling

Photovoltaic Power System: Modelling, Design, and Control 25 / 26

Photovoltaic Power System: Modelling, Design, and Control 26 / 26

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