Chaper 4 PV Output Characteritics and Mathematical Models: Presentation #2

Chaper 4
PV Output Characteritics and Mathematical Models

Presentation #2
Dr. Weidong Xiao
School of Electrical and Information Engineering

University of Sydney, Australia
2017
c
Photovoltaic Power System: Modelling, Design, and Control 1 / 27

Outline
1 Simplified single diode models
2 Parameterization for SSDM1
3 Parameterization for SSDM2
4 Variation with irradiance and temperature
5 Model selection from the simplified single diode models
6 Complete single diode model
7 Summary

Simplified single diode models
Besides the ISDM, the complete single diode model (CSDM) is often
simplified to another two versions by neglecting either the series resistor or
the shunt resistor.
They are commonly referred to the 4-parameter models.
Simplified single diode model #2

Simplified single diode model #1 (SSDM2):
(SSDM1):
qvd
qvpv kT A

vpv ipv = iph − is e c n −1
ipv = iph − is e kTc An − 1 −
Rh
where,vd = vpv + ipv Rs
Parameterization for SSDM1
The fourth unknown parameter is either Rh or Rs .

The fourth constraint for parameter identification can be derived from

dppv
=0
dvpv (VMS ,IMS )
It is based on the extermum value theorem that the maxima of the P-V
function can be identified at the critical point.
The critical point is the MPP (VMS , IMS ), which leads the derivative to be equal
to zero.
When the SSDM1 is applied, at the STC, the derivative operation results in
VMS
VMS VT An 2VMS
ISCS − ISS 1 + e CS −1 − =0
VTCS An Rh
The equation can be simplified by applying the constants and variable that are
defined before.
2VMS V
ISCS − ISS (1 + C1 Ainv )e(C1 Ainv ) − 1 − = 0, C1 = MS

(1)
Rh VTCS
Constraints for parameter identification
The photon current iph is equal to the short circuit current and becomes
known for SSDM1 at the STC.
The photon current iph is also equivalent to the sum of the diode current and
the current through the shunt resistor at the open circuit condition.
V V
ISCS = ISS e(C2 Ainv ) − 1 + OCS , C2 = OCS

(2)
Rh VTCS
At the maximum power point (MPP), the I-V characteristics can be written as
(3), which is also referred to the STC.
V V
ISCS − IMS = ISS e(C1 Ainv ) − 1 + MS , C1 = MS

(3)
Rh VTCS
Three unknown parameters of An , Rh , and ISS , can be determined by a
system solver from the three equations of (1)-(3) for the SSDM1.

Preparation for numerical solver - Newton Raphson
In SSDM1, the unknown parameters can defined as  

a vector. ISS (k )
 
The unknown Gh is introduced, which refers to 1/Rh . xk = 
A inv (k )

The index, k , represents the numerical operation in Gh (k )
discrete time.
Newton-Raphson (NR) method can be applied to identify the unknown
parameters by the numerical iteration shown as:
xk +1 = xk − J(xk )−1 F (xk )

where, F (xk ) is derived from the three constraints in (1), (2), and (3) and shown as:
ISCS − ISS (k ) eC2 Ainv (k ) − 1 − VOCS Gh (k )
 
 
 
ISCS − IMS − ISS (k ) eC1 Ainv (k ) − 1 − VMS Gh (k )

Fk = 
 

 
 
C A (k )

ISCS − ISS (k ) [1 + C1 Ainv (k )]e 1 inv − 1 − 2VMS Gh (k )
The partial derivation of (1), (2), and (3) are shown as Jk , which is a 3-by-3 matrix,
shown as:

J11 (k ) J12 (k ) J13 (k )
 J11 (k ) = −eC2 inv ((k ) + 1 (5a)
  J21 (k ) = −eC1 inv ((k ) + 1 (5b)
Jk = J21 (k ) J22 (k ) J23 (k )
 
J31 (k ) = −[1 + C1 inv (k )]eC1 inv ((k ) + 1
 
(5c)
J31 (k ) J32 (k ) J33 (k )
J13 (k ) = −VOCS (4a) J12 (k ) = −ISS (k )C2 eC2 Ainv (k ) (6a)

J23 (k ) = −VMS (4b) J22 (k ) = −ISS (k )C1 eC1 inv (k ) (6b)
J33 (k ) = −2VMS (4c) 2 C inv (k )
J32 (k ) = −ISS (k ) C1 eC1 inv (k )+C1 An (k )e 1

(6c)

Numerical solver - Newton Raphson
The solver can start with the

estimation of the values of Ainv , Gh ,
and ISS , forming initial xk .
If the ISDM parameters have been
determined, they can be used for
initializing Ainv and ISS . The value of
Gh can start with the zero value.
When the norm of the incremental
vector, ∆xk , is close to zero, the
iteration stops and outputs the final
parameter vector, xk .
The parameters is outputted and
converted to the parameters in
terms of An , ISS , and Rh , which are
used to form the output function of
the SSDM1.
Performance of SSDM1
The modeling performance can be visualized by plotting the model output

together with the product data. For comparison, the SSDM output is included.
The modelled MPP is identified at the point of (0.509V, 7.85 A) showing no
deviation from the MPP that is based on the product specification.
8 I−V by SSDM1 P−V by SSDM1

I−V by ISDM 4.06 P−V by ISDM
7.95 Modeled MPP by SSDM1 Modeled MPP by SSDM1
4.04
Modeled MPP by ISDM Modeled MPP by ISDM
7.9 Datasheet MPP 4.02 Datasheet MPP
pPV (W)
iPV (A)
7.85 4
3.98
7.8
3.96
7.75 3.94
7.7 3.92
0.5 0.505 0.51 0.515 0.5 0.505 0.51 0.515
vPV (V) vPV (V)

All components in the equivalent circuit that is used for PV cell model should
show the physical representation.
The value of An , Rh , and ISS that were identified for the SSDM1 are shown as
1.5708, -5.069 Ω, and 2.1 × 10−6 A, respectively.
Although the deviation of MPP is avoided, Rh shows negative value.
The shunt resistance is expected to be

positive to show the physical meaning.
As a result, the SSDM1 is not considered to
be the appropriate model for representing
the specific PV cell, IM156B3.
qvd
The parameterization will focus on the 2nd kT A
ipv = iph − is e c n −1
simplified single diode model, which is the
SSDM2. where,vd = vpv + ipv Rs

The function shows that the series resistance and the current appears inside
the exponential term.
Furthermore, the photon current, iph , cannot be simply replaced by the short
circuit current since the series resistance causes residual voltage at the
short-circuit condition.
To remove the coupling and form a direct form for ipv and vpv , the I-V
representation is transformed to the V-I form.
It is derived into the format of vpv = h(ipv ), shown as
iph + ISS − ipv

vpv = VTCS An ln − ipv Rs
ISS
| {z }
h(ipv )
The power output is therefore expressed as:
iph + ISS − ipv 2

ppv = ipv VTCS An ln − ipv Rs
ISS
Constraints for parameter identification
The first constraint for numerical solver is ISCS Rs Ainv

based on the short circuit condition and ISCS = Iph − ISS e V TCS − 1 (7)
shown in (7).
Following the open circuit condition, the VOCS Ainv

second constraint can be established as: Iph − ISS e VTCS −1 =0 (8)
Following the MPP, the third constraint can be established as
(VMS + IMS Rs )Ainv

IMS = Iph − ISS e V TCS −1 (9)
The fourth constraint can be defined by the extremum value thereom,

dp/di = 0, and expressed as
VTCS Iph + ISS − IMS VTCS IMS 1

ln − ln − 2IMS Rs = 0 (10)
Ainv ISS Ainv Iph + ISS − IMS

Based on (7)-(10), the function, F (xk ), is built as:
 
ISCS Rs (k )Ainv (k )

 Iph − ISS (k ) e V TCS − 1 − ISCS


 
 
 
VOCS Ainv (k )
 
 
V
 

 Iph − ISS (k ) e TCS −1 

F (xk ) = 



(V + I R (k ))A (k )
 
 MS MS s inv 
 
I − I (k ) e
 ph VTCS − 1 − IMS 
SS 
 
 
 
 VTCS λi (k ) VTCS IMS 1 
ln − ln − 2IMS Rs (k )
Ainv (k ) ISS Ainv (k ) λi (k )
where λi (k ) = Iph (k ) + ISS (k ) − IMS .

It shows four unknowns that form the vector, xk , in discrete time.

Based on the four unknowns, partial derivation can construct J(xk ), which
becomes a 4-by-4 matrix in discrete time.
   
ISS (k ) J11 (k ) J12 (k ) J13 (k ) J14 (k )
   
Ainv (k )
J21 (k ) J22 (k ) J23 (k ) J24 (k )
 
xk = 
 
J(xk ) = 
  
 Gs (k )  
  J (k ) J (k ) J (k ) J (k )
 31 32 33 34 
Iph (k )  
J41 (k ) J42 (k ) J43 (k ) J44 (k )
The details of J(xk ) and its computation can refer to the book.
Newton-Raphson (NR) method can be applied to identify the unknown
parameters by the numerical iteration.
The values of An , Rs , Iph , and ISS for the SSDM2 should be identified
accordingly.
Simulation result of SSDM2
Following the given parameters, the values of An , Rs , Iph , and ISS for the
SSDM2 are identified by NR as 1.3044, 1.6 mΩ, 8.38 A, and 9.3186 × 10−8 A,
respectively.
All parameters shows the physical meaning to represent the SSDM2 for the
specific PV cell, IM156B3.
The significant advantage of the simplified single diode model, SSDM2, is
capable for matching the three important points at STC.
8 I−V by SSDM2 P−V by SSDM2

I−V by ISDM 4.06 P−V by ISDM
7.95 Modeled MPP by SSDM2 Modeled MPP by SSDM2
4.04
Modeled MPP by ISDM Modeled MPP by ISDM
7.9 Datasheet MPP 4.02 Datasheet MPP
pPV (W)
iPV (A)
7.85 4
3.98
7.8
3.96
7.75
3.94
7.7 3.92
0.5 0.505 0.51 0.515 0.5 0.505 0.51 0.515
vPV (V) vPV (V)
Variation with irradiance and temperature
When the constants of An and Rh or Rs are identified for the SSDM1 or

SSDM2 according to the STC, the simulation model can be constructed to
shows the response to the variation of irradiance and temperature.
Therefore, the open-circuit voltage for both SSDM1 and SSDM2, vOC (Ea , ∆T )
corresponding to the variation of irradiance and cell temperature can be
corrected by the same as the update for ISDM.
vOC (Ea , ∆T ) = VOCS (1 + βT ∆T )νT
For the SSDM1, The correction for the photon current, iph (Ea , ∆T ), follows the
same as the update for ISDM.
Ea
iph (Ea , ∆T ) = I (1 + αT ∆T )
ESTC SCS
For the SSDM2, the value of Iph is identified that is not exactly equal to the
short circuit current due to the series resistance, it can be updated by
Ea
iph (Ea , ∆T ) = Iph (1 + αT ∆T )
ESTC
Model construction for SSDM1
When the SSDM1 is considered, the diode saturation current is (Ea , ∆T ) can
be determined at the open-circuit condition considering the presence of the
shunt resistance, Rh .
vOC (Ea , ∆T )
iph (Ea , ∆T ) −
Gh
is (Ea , ∆T ) =
vOC (Ea , ∆T )
e vT A n −1
where vT = kTc /q.
Thus, the current can be updated every simulation cycle by the instant values
of the photon current and the diode saturation current
vpv
vpv
ipv = iph (Ea , ∆T ) − is (Ea , ∆T ) e vT An − 1 −
Rh
The model can be constructed as a current source with the control variables
of voltage and environmental condition. This is similar to the implementation
of ISDM.
Model construction for SSDM2
For the SSDM2, the diode saturation current is (Ea , ∆T ) can be determined at
the open-circuit condition since the photon current is equal to the diode
current
iph (Ea , ∆T )
is (Ea , ∆T ) =
qvOC (Ea , ∆T )
e kTc An −1
The I-V characteristics can be shown in (18) with response with the
environmental variation.
vd
ipv = iph (Ea , ∆T ) − is (Ea , ∆T ) e v T A n −1
where, vd = vpv + ipv Rs .

It turns into an implicit equation, which requires iteration loop for simulation.
Another way for the SSDM2 is to use the V-I characteristics instead of I-V, as
expressed in an explicit form
iph (Ea , ∆T ) + is (Ea , ∆T ) − ipv
vpv = vT An ln − ipv Rs
is (Ea , ∆T )
Model selection from the simplified single diode models
It should be mentioned that the previous case study does not mean that the
SSDM2 is the more suitable equivalent circuit than the SSDM1.
The model selection from either the SSDM1 or SSDM2 depends on the PV
cell specification, for example, JAC-M6SR-3 is a mono-crystalline cell.
Cell Model Parameters DMPP
JACP6RF ISDM ISS = 1.9224 × 10−7 A, An = 1.4168, Iph = 0.0041
9.272A
SSDM1 ISS = 1.1004 × 10−7 A, An = 1.3740, Iph = ' 0
9.272A, Rh = 10.196Ω
SSDM2 ISS = 6.0741 × 10−7 A, An = 1.5153, Iph = ' 0
9.272A Rs = −7 × 10−4 Ω
IM156B3 ISDM ISS = 8.1684 × 10−7 A, An = 1.4803, Iph = 0.0059
8.38A
SSDM1 ISS = 2.1014 × 10−6 A, An = 1.5708, Iph = ' 0
8.38A, Rh = −5.069Ω
SSDM2 ISS = 9.3186 × 10−8 A, An = 1.3048, Iph = ' 0
8.38A, Rs = 1.6mΩ
Flowchart for model selection
A more complicated model

generally require more data
and computational power for
parameterization and
simulation, respectively.
ISDM first thanks to the
simplicity.
DMPP should be evaluated
for suitability.
SSDM1 is the 2nd choice for
its advantage of relative
simplicity and zero deviation
at MPP.
Physical meaning of
parameters should be
checked.
Model aggregation and terminal output configuration
Solar cells are usually physically Implementation for ISDM and SSDM1
encapsulated and electrically connected
into photovoltaic modules for high power
capacity and weather protection.
For practical power utilization,the PV
modules are mounted on supporting
structures and electrically connected in
series or series/parallel to form a
photovoltaic string or array. Implementation for SSDM2
Assuming the solar radiation and cell
temperature are identically distributed to
each solar cell, the single cell model can
be aggregated to any size PV array using
the number of cells connected in series
and parallel.

Complete single diode model
The available data in the PV product

specification provide four constraints
that fits the parameterization of
SSDM1 and SSDM2.
The complete single diode model
vd
(CSDM) is mostly referred to the ipv = iph − id −
Rh
5-parameter model.
qvd
The available data in PV product
id = is e kTc An −1
datasheets are generally insufficient
to recover the five unknown
parameters for CSDM. where vd is equal to
Additional information is needed for vd = vpv + ipv Rs
identifying CSDM.

Difficult for completed single diode model
Most product datasheets provide the I-V and even P-V curve in low-resolution
figures, which roughly illustrate the shape of the output characteristics.
The low resolution and data inaccuracy of the curves might not be appropriate
to serve the purpose of accurate modeling and simulation.
Sometimes, the data set that is recovered from the datasheet I-V curve does
not match the claimed important points in term of the short circuit, open circuit
and the MPP.
The information might be misleading for modelling accuracy if the data set is
not claimed to be accurate.
Due to the imperfection of the manufacturing process, the variation in PV cells
might be significant even through they are produced by the same process.
For this reason, the product datasheet usually provides a group of data
showing the specification at the STC for the same PV cell model.
For example, the product datasheets of the JAC-M6SR-3 and IM156B3
provide 10 and 16 groups data for different sampled data that are tested at
the STC.
Approaches for CSDM
It is recommended to adopt the model only in case that the full I-V data set
are available for modelling and the curve fitting performance are critically
important for simulation.
However, in reality, the measured data might not accurately reflect the CSDM
expression and solving the equations leads to a singular solution.
The I-V characteristics of CSDM is expressed in a non-explicit form,
ipv = f (iph , is , vpv , ipv ), which requires iterative loop for numerical simulation
that eventually increases the computational load.
This generally brings into question if the CSDM is necessary to be used for
PV modeling since the various SSDM can perform well to match the available
data from PV manufacturers.
One approach to identify the five unknowns in the CSDM is based on one
additional constraint that is derived from the I-V data set.
One additional point is intentionally selected from the I-V curve for the
parameter identification.
Newton-Raphson method is applied to identify all parameters.
Performance of CSDM
One specific PV module, MSX-83, is selected for the modelling process since
the spreadsheet is available to provide the measured data of the I-V curve at
the STC.
Based on the available I-V data set, one additional point is selected for the
parameter identification.
It shows that the CSDM can not only match the important points, but also
improve curve fitting performance.
The evaluation result is summarized in the table showing the advantage of
CSDM in term of the low value of RMSD(I).
Model Parameters DMPP RMSD(I)
ISDM −6
ISS = 7.3697×10 A, An = 1.7565, Iph = 0.0084 0.2 A
5.27A
SSDM1 ISS = 2.8347×10−6 A, An = 1.5885, Iph ' ' 0 0.1339 A
5.27A, Rs = 15mΩ
CSDM ISS = 2.1560×10−8 A, An = 1.1886, Iph ' ' 0 0.0289 A
5.27A ,Rs = 5.3mΩ, , Rh = 4.80Ω

Summary
The diode based model is well established and suitable for representing the
PV cells that are made of crystalline silicon since both share the same
composition and manufacturing process.
The chapter focuses on the single diode models to represent the PV output
characteristics.
There is no error at the point of the short circuit and open circuit since both
constraints are included for the parameter identification. Therefore, the
performance indices of DOC and DSC are not concerned for any single diode
model.
The major disadvantage of the ISDM is the presence of the non-zero value of
DMPP , which shows the deviation at the MPP.
More comprehensive models are needed when the DMPP becomes a concern.
The simplified single diode models including SSDM1 and SSDM2, generally
show the advantages in terms of straightforward parameterization and
computational efficiency, of which the modelling process is based on the data
of the three important points at the STC that are clearly provided by the PV
manufacturers.
Summary
The models of SSDM1 and SSDM2 show no mismatch at the modeled MPP,
which is more advantageous than the ISDM.
If the curve fitting performance is important, the complete single diode model
(CSDM) can be used to improve the modelling accuracy.
The pre-condition for CSDM is that the accurate data is available to represent
the full I-V or P-V curves. Otherwise, the significant effort for either CSDM or
double diode model (DDM) might be completely meaningless.
The correction factors that are commonly provided by product datasheets are
applied to construct the simulation model in response to the variation in solar
irradiance and cell temperature.
If the solar radiation and cell temperature are uniformly distributed, the single
cell model can be aggregated to any size PV array using the number of cells
connected in series and parallel.

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Chaper 4

PV Output Characteritics and Mathematical Models

Dr. Weidong Xiao

School of Electrical and Information Engineering

Photovoltaic Power System: Modelling, Design, and Control 1 / 27

1 Simplified single diode models

2 Parameterization for SSDM1

3 Parameterization for SSDM2

4 Variation with irradiance and temperature

5 Model selection from the simplified single diode models

6 Complete single diode model

Photovoltaic Power System: Modelling, Design, and Control 2 / 27

Simplified single diode model #2

The fourth unknown parameter is either Rh or Rs .

Photovoltaic Power System: Modelling, Design, and Control 5 / 27

In SSDM1, the unknown parameters can defined as  

xk +1 = xk − J(xk )−1 F (xk )

J13 (k ) = −VOCS (4a) J12 (k ) = −ISS (k )C2 eC2 Ainv (k ) (6a)

Photovoltaic Power System: Modelling, Design, and Control 7 / 27

The solver can start with the

The modeling performance can be visualized by plotting the model output

8 I−V by SSDM1 P−V by SSDM1

Photovoltaic Power System: Modelling, Design, and Control 9 / 27

The shunt resistance is expected to be

Photovoltaic Power System: Modelling, Design, and Control 10 / 27

iph + ISS − ipv

The power output is therefore expressed as:

iph + ISS − ipv 2

The first constraint for numerical solver is  ISCS Rs Ainv 

Following the open circuit condition, the  VOCS Ainv 

Following the MPP, the third constraint can be established as

 (VMS + IMS Rs )Ainv 

The fourth constraint can be defined by the extremum value thereom,

VTCS Iph + ISS − IMS VTCS IMS 1

Photovoltaic Power System: Modelling, Design, and Control 12 / 27

Based on (7)-(10), the function, F (xk ), is built as:

where λi (k ) = Iph (k ) + ISS (k ) − IMS .

It shows four unknowns that form the vector, xk , in discrete time.

8 I−V by SSDM2 P−V by SSDM2

When the constants of An and Rh or Rs are identified for the SSDM1 or

where, vd = vpv + ipv Rs .

A more complicated model

Photovoltaic Power System: Modelling, Design, and Control 21 / 27

The available data in the PV product

Photovoltaic Power System: Modelling, Design, and Control 22 / 27

Photovoltaic Power System: Modelling, Design, and Control 25 / 27

Photovoltaic Power System: Modelling, Design, and Control 27 / 27

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The first constraint for numerical solver is ISCS Rs Ainv

Following the open circuit condition, the VOCS Ainv

(VMS + IMS Rs )Ainv