CLA30MT1200NPB

High Efficiency Thyristor VRRM = 1200 V

I TAV = 15 A
VT = 1.35 V

Three Quadrants operation: QI - QIII

1~ Triac

Part number

CLA30MT1200NPB

Backside: anode/cathode
Three Quadrants Operation
Positive Half Cycle
T2 + T2 4

(-) IGT (+) IGT

T1 T1

REF QII QI REF

IGT - + IGT
T2 QIII QIV
3

(-) IGT 1
T1

REF -
Negative Half Cycle
Note: All Polarities are referenced to T1

Features / Advantages: Applications: Package: TO-220

● Triac for line frequency ● Line rectifying 50/60 Hz ● Industry standard outline
● Three Quadrants Operation ● Softstart AC motor control ● RoHS compliant
- QI - QIII ● DC Motor control ● Epoxy meets UL 94V-0
● Planar passivated chip ● Power converter ● High creepage distance
● Long-term stability ● AC power control between terminals
of blocking currents and voltages ● Lighting and temperature control

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c

© 2020 IXYS all rights reserved

 CLA30MT1200NPB

Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 1300 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 V
I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 10 µA
VR/D = 1200 V TVJ = 125°C 1.5 mA
VT forward voltage drop IT = 15 A TVJ = 25°C 1.35 V
IT = 30 A 1.68 V
IT = 15 A TVJ = 125 °C 1.35 V
IT = 30 A 1.79 V
I TAV average forward current TC = 120 °C T VJ = 150 °C 15 A
I RMS RMS forward current per phase 180° sine 33 A
VT0 threshold voltage TVJ = 150 °C 0.89 V
for power loss calculation only
rT slope resistance 30 mΩ
R thJC thermal resistance junction to case 0.95 K/W
RthCH thermal resistance case to heatsink 0.5 K/W
Ptot total power dissipation TC = 25°C 130 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 170 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 185 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 145 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 155 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 145 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 140 A²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 105 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 100 A²s
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 9 pF
PGM max. gate power dissipation t P = 30 µs T C = 150 °C 5 W
t P = 300 µs 1 W
PGAV average gate power dissipation 0.2 W
(di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 45 A 150 A/µs
t P = 200 µs; di G /dt = 0.3 A/µs;
IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 15 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 150°C 500 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.3 V
TVJ = -40 °C 1.6 V
I GT gate trigger current VD = 6 V TVJ = 25 °C ± 40 mA
TVJ = -40 °C ± 60 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 150°C 0.2 V
I GD gate non-trigger current ±1 mA
IL latching current tp = 10 µs TVJ = 25 °C 70 mA
IG = 0.3 A; di G /dt = 0.3 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 50 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.3 A; di G /dt = 0.3 A/µs
tq turn-off time VR = 100 V; I T = 15A; V = ⅔ VDRM TVJ =125 °C 150 µs
di/dt = 10 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c

© 2020 IXYS all rights reserved

 CLA30MT1200NPB

Package TO-220 Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 35 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 150 °C
Weight 2 g
MD mounting torque 0.4 0.6 Nm
FC mounting force with clip 20 60 N

Product Marking Part description

C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
30 = Current Rating [A]
MT = 1~ Triac
1200 = Reverse Voltage [V]
Part Number XXXXXX N = Three Quadrants operation: QI - QIII
PB = TO-220AB (3)
Logo yywwZ
Date Code
Lot # 123456
Location

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard CLA30MT1200NPB CLA30MT1200NPB Tube 50 517031

Similar Part Package Voltage class

CLA30MT1200NPZ TO-263AB (D2Pak) (2HV) 1200

Equivalent Circuits for Simulation * on die level T VJ = 150°C

I V0 R0 Thyristor

V 0 max threshold voltage 0.89 V

R0 max slope resistance * 27 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c

© 2020 IXYS all rights reserved

 CLA30MT1200NPB

Outlines TO-220

= supplier option
A Dim. Millimeter Inches
A1 Min. Max. Min. Max.
E

Q
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055

H1
ØP A2 2.29 2.79 0.090 0.110
4
b 0.64 1.01 0.025 0.040
D

b2 1.15 1.65 0.045 0.065

C 0.35 0.56 0.014 0.022
1 2 3 D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
L1

3x b2
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L

L 12.70 13.97 0.500 0.550

L1 2.79 5.84 0.110 0.230
3x b C
2x e ØP 3.54 4.08 0.139 0.161
A2 Q 2.54 3.18 0.100 0.125

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c

© 2020 IXYS all rights reserved

 CLA30MT1200NPB

Thyristor
50 140 1000
TVJ = 150°C 50 Hz, 80% VRRM VR = 0 V

40 TVJ = 125°C
120

IT 30 ITSM 2
TVJ = 45°C It
100 100 TVJ = 45°C

[A] 20 [A] 2
[A s]
TVJ = 125°C
80
10 TVJ = 125°C

TVJ = 25°C
0 60 10
0,5 1,0 1,5 2,0 2,5 0,01 0,1 1 1 2 3 4 5 6 7 8 910
VT [V] t [s] t [ms]
2
Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms)

4 1000 40
IGD: TVJ = 125°C dc =
C 1
B 0.5
IGD: TVJ = -40°C

3 30 0.4
B 0.33
100
IGD: TVJ = 0°C

0.17
VG B tgd typ. Limit IT(AV)M 0.08
IGD: TVJ = 25°C

2 20
[V] [µs] [A]
10
TVJ = 125°C
1 10
IGD: TVJ = 25°C

A
0 1 0
0 25 50 75 10 100 1000 0 25 50 75 100 125 150 175
IG [mA] IG [mA] TC [°C]
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time Fig. 6 Max. forward current
at case temperature

30 1,0
dc = RthHA
1
0.4
25 0.5
0.6 0,8
0.4
0.8
0.33
1.0 ZthJC
20 0.17
2.0
P(AV) 0.08 0,6
4.0
15 [K/W]
[W] Rthi [K/W] t i [s]
0,4
10 0.120 0.0100
0.100 0.0011
0,2 0.220 0.0250
5
0.245 0.3200
0.265 0.0900
0 0,0
0 10 0 50 100 150 100 101 102 103 104
IT(AV) [A] Tamb [°C] t [ms]

Fig. 7a Power dissipation versus direct output current Fig. 8 Transient thermal impedance
Fig. 7b and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121c

© 2020 IXYS all rights reserved