CLA80MT1200NHB

High Efficiency Thyristor VRRM = 1200 V

I TAV = 40 A
VT = 1.26 V

Three Quadrants operation: QI - QIII

1~ Triac

Part number

CLA80MT1200NHB

Backside: Terminal 2
Three Quadrants Operation
Positive Half Cycle
T2 + T2 2

(-) IGT (+) IGT

T1 T1

REF QII QI REF

IGT - + IGT
T2 QIII QIV
3

(-) IGT 1
T1

REF -
Negative Half Cycle
Note: All Polarities are referenced to T1

Features / Advantages: Applications: Package: TO-247

● Triac for line frequency ● Line rectifying 50/60 Hz ● Industry standard outline
● Three Quadrants Operation ● Softstart AC motor control ● RoHS compliant
- QI - QIII ● DC Motor control ● Epoxy meets UL 94V-0
● Planar passivated chip ● Power converter
● Long-term stability ● AC power control
of blocking currents and voltages ● Lighting and temperature control

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d

© 2020 IXYS all rights reserved

 CLA80MT1200NHB

Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 1300 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 V
I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 10 µA
VR/D = 1200 V TVJ = 125°C 2 mA
VT forward voltage drop IT = 40 A TVJ = 25°C 1.30 V
IT = 80 A 1.59 V
IT = 40 A TVJ = 125 °C 1.26 V
IT = 80 A 1.64 V
I TAV average forward current TC = 120 °C T VJ = 150 °C 40 A
I RMS RMS forward current per phase 180° sine 88 A
VT0 threshold voltage TVJ = 150 °C 0.88 V
for power loss calculation only
rT slope resistance 10 mΩ
R thJC thermal resistance junction to case 0.4 K/W
RthCH thermal resistance case to heatsink 0.3 K/W
Ptot total power dissipation TC = 25°C 310 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 520 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 440 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 475 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 1.35 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.31 kA²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 970 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 940 A²s
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 25 pF
PGM max. gate power dissipation t P = 30 µs T C = 150 °C 10 W
t P = 300 µs 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 120 A 150 A/µs
t P = 200 µs; di G /dt = 0.3 A/µs;
IG = 0.3 A; V = ⅔ VDRM non-repet., I T = 40 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 150°C 500 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 1.7 V
TVJ = -40 °C 1.9 V
I GT gate trigger current VD = 6 V TVJ = 25 °C ± 70 mA
TVJ = -40 °C ± 90 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 150°C 0.2 V
I GD gate non-trigger current ±1 mA
IL latching current tp = 10 µs TVJ = 25 °C 100 mA
IG = 0.3 A; di G /dt = 0.3 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 70 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.3 A; di G /dt = 0.3 A/µs
tq turn-off time VR = 100 V; I T = 40A; V = ⅔ VDRM TVJ =125 °C 150 µs
di/dt = 10 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d

© 2020 IXYS all rights reserved

 CLA80MT1200NHB

Package TO-247 Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 70 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 150 °C
Weight 6 g
MD mounting torque 0.8 1.2 Nm
FC mounting force with clip 20 120 N

Product Marking Part description

C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
80 = Current Rating [A]
MT = 1~ Triac
1200 = Reverse Voltage [V]
Logo IXYS N = Three Quadrants operation: QI - QIII
Part Number XXXXXXXXX HB = TO-247AD (3)
Date Code yywwZ
1234
Lot#

Location

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard CLA80MT1200NHB CLA80MT1200NHB Tube 30 517024

Similar Part Package Voltage class

CLA80MT1200NHR ISO247 (3) 1200

Equivalent Circuits for Simulation * on die level T VJ = 150°C

I V0 R0 Thyristor

V 0 max threshold voltage 0.88 V

R0 max slope resistance * 7.5 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d

© 2020 IXYS all rights reserved

 CLA80MT1200NHB

Outlines TO-247
A D2
E A2 ØP Ø P1

S Sym. Inches Millimeter

Q
min. max. min. max.
A 0.185 0.209 4.70 5.30
D1 A1 0.087 0.102 2.21 2.59
D A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
2x E2
E 0.610 0.640 15.48 16.24
4 E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
1 2 3 L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
L1 E1 ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
L b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
2x b2
3x b
C D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
b4 A1
E1 0.530 - 13.45 -
2x e Ø P1 - 0.29 - 7.39

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d

© 2020 IXYS all rights reserved

 CLA80MT1200NHB

Thyristor
80 500 10000
VR = 0 V
50 Hz, 80% VRRM

60
400
IT ITSM 2
It
40 1000 TVJ = 45°C
[A] [A] 2
TVJ = 45°C [A s]
300
TVJ = 125°C
20
TVJ = 125°C
TVJ = 150°C TVJ = 125°C
TVJ = 25°C
0 200 100
0,0 0,5 1,0 1,5 2,0 0,01 0,1 1 1 2 3 4 5 6 7 8 910
VT [V] t [s] t [ms]
Fig. 2 Surge overload current 2
Fig. 1 Forward characteristics Fig. 3 I t versus time (1-10 s)
ITSM: crest value, t: duration

10 1000 80
dc =
1: IGD, TVJ = 150°C
70 1
2: IGT, TVJ = 25°C
0.5
3: IGT, TVJ = -40°C
0.4
TVJ = 125°C 60
0.33
100 0.17
VG 23 50 0.08
tgd IT(AV)M
1 40
[V] 1 56 [A]
[µs] 30
4 10
20
4: PGAV = 0.5 W
5: PGM = 5 W lim.
6: PGM = 10 W 10
typ.
0,1 1 0
1 10 100 1000 10000 10 100 1000 0 40 80 120 160
IG [mA] IG [mA] Tcase [°C]
Fig. 4 Gate voltage & gate current Fig. 5 Gate controlled delay time tgd Fig. 6 Max. forward current at
case temperature

80 0,5
dc = RthHA
1 0.4
0.5 0.6 0,4
60 0.4 0.8
0.33 1.0
P(AV) 0.17 2.0 0,3
0.08 4.0
40 ZthJC
0,2 i Rthi (K/W) ti (s)
[W]
[K/W] 1 0.060 0.0100
20 2 0.040 0.0001
0,1 3 0.155 0.0200
4 0.055 0.2000
5 0.090 0.1100
0 0,0
0 10 20 30 40 50 0 50 100 150 1 10 100 1000 10000
IT(AV) [A] Tamb [°C] t [ms]
Fig. 7 Transient thermal impedance junction to case
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200121d

© 2020 IXYS all rights reserved