MCC72-12io1B

Thyristor Module VRRM = 2x 1200 V

I TAV = 85 A
VT = 1.34 V

Phase leg

Part number

MCC72-12io1B

Backside: isolated

3 1 2
6 7 5 4

Features / Advantages: Applications: Package: TO-240AA

● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Isolation Voltage: 4800 V~
● Planar passivated chip ● Softstart AC motor control ● Industry standard outline
● Long-term stability ● DC Motor control ● RoHS compliant
● Direct Copper Bonded Al2O3-ceramic ● Power converter ● Soldering pins for PCB mounting
● AC power control ● Base plate: DCB ceramic
● Lighting and temperature control ● Reduced weight
● Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MCC72-12io1B

Thyristor Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage TVJ = 25°C 1300 V
VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1200 V
I R/D reverse current, drain current VR/D = 1200 V TVJ = 25°C 200 µA
VR/D = 1200 V TVJ = 125°C 5 mA
VT forward voltage drop I T = 150 A TVJ = 25°C 1.34 V
I T = 300 A 1.74 V
I T = 150 A TVJ = 125 °C 1.34 V
I T = 300 A 1.82 V
I TAV average forward current TC = 85 °C T VJ = 125 °C 85 A
I T(RMS) RMS forward current 180° sine 133 A
VT0 threshold voltage TVJ = 125 °C 0.85 V
for power loss calculation only
rT slope resistance 3.2 mΩ
R thJC thermal resistance junction to case 0.3 K/W
RthCH thermal resistance case to heatsink 0.2 K/W
Ptot total power dissipation TC = 25°C 333 W
I TSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 1.70 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.84 kA
t = 10 ms; (50 Hz), sine TVJ = 125 °C 1.45 kA
t = 8,3 ms; (60 Hz), sine VR = 0 V 1.56 kA
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 14.5 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 14.0 kA²s
t = 10 ms; (50 Hz), sine TVJ = 125 °C 10.4 kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 10.1 kA²s
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 119 pF
PGM max. gate power dissipation t P = 30 µs T C = 125 °C 10 W
t P = 300 µs 5 W
PGAV average gate power dissipation 0.5 W
(di/dt) cr critical rate of rise of current TVJ = 125 °C; f = 50 Hz repetitive, IT = 250 A 150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs;
I G = 0.45 A; V = ⅔ VDRM non-repet., I T = 85 A 500 A/µs
(dv/dt)cr critical rate of rise of voltage V = ⅔ VDRM TVJ = 125°C 1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGT gate trigger voltage VD = 6 V TVJ = 25 °C 2.5 V
TVJ = -40 °C 2.6 V
I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA
TVJ = -40 °C 200 mA
VGD gate non-trigger voltage VD = ⅔ VDRM TVJ = 125°C 0.2 V
I GD gate non-trigger current 10 mA
IL latching current tp = 10 µs TVJ = 25 °C 450 mA
IG = 0.45 A; di G /dt = 0.45 A/µs
IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA
t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs
IG = 0.45 A; di G /dt = 0.45 A/µs
tq turn-off time VR = 100 V; I T = 150A; V = ⅔ VDRM TVJ =100 °C 185 µs
di/dt = 10 A/µs dv/dt = 20 V/µs t p = 200 µs

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MCC72-12io1B

Package TO-240AA Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 200 A
TVJ virtual junction temperature -40 125 °C
T op operation temperature -40 100 °C
Tstg storage temperature -40 125 °C
Weight 81 g
MD mounting torque 2.5 4 Nm
MT terminal torque 2.5 4 Nm
d Spp/App terminal to terminal 13.0 9.7 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 16.0 16.0 mm
VISOL isolation voltage t = 1 second 4800 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 4000 V

Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard MCC72-12io1B MCC72-12io1B Box 36 458198

Similar Part Package Voltage class

MCMA85P1200TA TO-240AA-1B 1200
MCMA110P1200TA TO-240AA-1B 1200

Equivalent Circuits for Simulation * on die level T VJ = 125°C

I V0 R0 Thyristor

V 0 max threshold voltage 0.85 V

R0 max slope resistance * 2 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MCC72-12io1B

Outlines TO-240AA

3 1 2
6 7 5 4

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MCC72-12io1B

Thyristor
2500 105 250
VR = 0 V DC
50 Hz, 80% VRRM 180° sin
120°
2000 200 60°
30°
ITSM
IFSM
1500 I2t 150
ITAVM
TVJ = 45°C TVJ = 45°C
[A] 104
TVJ = 125°C [A]
1000 100
[A2s]

TVJ = 125°C
500 50

0 103 0
10-3 10-2 10-1 100 101 1 2 3 6 8 10 0 50 100 150

t [s] t [ms] TC [°C]

Fig. 1 Surge overload current Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
ITSM, IFSM: Crest value, t: duration at case temperature

250 10
RthJA [K/W] 1: IGT, TVJ = 125°C
0.4 2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
0.6
200
0.8

1
150 VG 3
1.2
2
PT 1 6
1.5 5
1
[V] 4
100 2
DC
3
[W] 180° sin
120°
50 60° 4: PGAV = 0.5 W
30°
5: PGM = 5 W
IGD, TVJ = 125°C
6: PGM = 10 W
0 0.1
0 50 100 150 0 50 100 150 100 101 102 103 104
ITAVM, IFAVM [A] TA [°C] IG [mA]

Fig. 4 Power dissipation vs. onstate current and ambient temperature (per thyristor/diode) Fig. 5 Gate trigger characteristics

1200 1000
RthKA [K/W] TVJ = 25°C
0.1
1200
0.15

0.2
typ. Limit
800 100
0.25

Ptot 0.3 tgd

600
0.4
[W] [µs]
0.5
Circuit
400 B6 10
0.6
3x MCC72 or
3x MCD72

200

0 1
0 100 200 300 0 50 100 150 10 100 1000
IdAVM [A] TA [°C] IG [mA]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current Fig. 7 Gate trigger delay time
and ambient temperature

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved

 MCC72-12io1B

Thyristor
1500
RthJA [KW]

0.03

0.06

0.08
1000 0.1

Ptot 0.15

0.25
[W]
0.3
Circuit
500 W3 0.5
3x MCC72 or
3x MCD72

0
0 50 100 150 200 250 0 50 100 150
IRMS [A] TA [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current
and ambient temperature

0.4
RthJC for various conduction angles d:
30°
60°
DC 0.30
120°
0.3
180°
180° 0.31
DC 120° 0.33
60° 0.35
0.2 30° 0.37

Constants for ZthJC calculation:

0.1
1 0.008 0.0019
2 0.054 0.0470
3 0.238 0.3000
0
10-3 10-2 10-1 100 101 102 103

Fig. 9 Transient thermal impedance junction to case (per thyristor)

0.6
RthJK for various conduction angles d:
30°
0.5 60° DC 0.50
120°
180° 0.51
180°
0.4 120° 0.53
DC
60° 0.55
30° 0.57
0.3

Constants for ZthJK calculation:

0.2

1 0.008 0.0019
0.1 2 0.054 0.0470
3 0.238 0.3000
0 4 0.200 1.2500
10-3 10-2 10-1 100 101 102 103 104

Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20200701d

© 2020 IXYS all rights reserved