Type Number 2. Structure 3. Application & Customer 4. Outline 5. Related Specifications

SECURITY
CODE MITSUBISHI ELECTRIC CORPORATION

Spec. NAME Prepared by K.Kurachi
Checked by R
Customer’s E
Std. Spec. Approved by I.Umezaki V
DATE 8-May-2008
HIGH VOLTAGE DIODE MODULE
1. Type Number RM1200DB-66S

2. Structure Flat base type (Insulated package, Cu base plate)
3. Application & Customer High power converters & Inverters for traction application
4. Outline See Fig. 1
5. Related Specifications
Fig. 1 - Outline drawing
PAGE
HIGH VOLTAGE DIODE MODULE HVM-2019 (HV-SETSU)
1 / 10
MITSUBISHI ELECTRIC CORPORATION
6. Maximum Ratings
Item Symbol Conditions Ratings Unit
6.1 Repetitive peak reverse voltage VRRM Tj = 25 °C 3300 V
6.2 Non-repetitive peak reverse

VRSM Tj = 25 °C 3300 V
voltage
6.3 Reverse DC voltage VR(DC) Tj = 25 °C 2200 V
6.4 DC forward current IF Tc = 25 °C 1200 A
Tj = 25 °C start, tw = 8.3 ms
6.5 Surge forward current IFSM 9600 A
Half sign wave
Tj = 25 °C start, tw = 8.3 ms
6.6 Surge current load integral I2t 384 kA2s
Half sign wave
Charged part to the baseplate
6.7 Isolation voltage Viso 6000 V
RMS sinusoidal, 60Hz 1min.
6.8 Junction temperature Tj — −40 ~ +150 °C
6.9 Storage temperature Tstg — −40 ~ +125 °C
6.10 Operating temperature Top — −40 ~ +125 °C
VR ≤ 2200 V
6.11 Maximum reverse recovery
— di/dt ≤ 4800 A/µs, Tj = 125 °C 2100 kW
instantaneous power
[See Fig.1, Fig.2, 12-5]
7. Electrical Characteristics
Limits
Item Symbol Conditions Unit
Min. Typ. Max.
Tj = 25 °C — — 5
7.1 Repetitive reverse current IRRM VRM = VRRM mA
Tj = 125 °C — 3 30
(Note 1)
Tj = 25 °C — 2.80 —
7.2 Forward voltage VFM IF = 1200 A V
Tj = 125 °C — 2.70 —
7.3 Reverse recovery time trr — 0.75 — µs

VR = 1650 V, IF = 1200 A
7.4 Reverse recovery current Irr di/dt = −3700 A/µs — 1600 — A
Tj = 125 °C
7.5 Reverse recovery charge Qrr [See Fig.1,Fig.2]
— 850 — µC
7.6 Reverse recovery energy Erec — 0.75 — J/P
Note 1: It doesn't include the voltage drop by Internal lead resistance.
PAGE
2 / 10
8. Thermal Characteristics
Limits
Min. Typ. Max.
Junction to case
8.1 Thermal resistance Rth(j-c)R — — 18.0 K/kW
(per 1/2 module)
(Note 2)
Case to fin
8.2 Contact thermal resistance Rth(c-f) Conductive grease applied — 16.0 — K/kW
(per 1/2 module)
Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.
9. Mechanical Characteristics
Limits
Min. Typ. Max.
9.1 Mounting torque — Main terminal screw : M8 7.0 — 13.0 N·m
9.2 Mounting torque — Mounting screw : M6 3.0 — 6.0 N·m
9.3 Mass — — — 1.5 — kg
9.4 Comparative tracking index CTI — 600 — — —
9.5 Clearance — — 19.5 — — mm
9.6 Creepage distance — — 32 — — mm
9.7 Internal inductance LA-K(int) — — 35 — nH
9.8 Internal lead resistance RA-K(int) Tc = 25 °C — 0.25 — mΩ
10. Shipping Inspection Report Item (note 3)

Static characteristics : IRRM [7.1], VFM [7.2]
Dynamic characteristics : trr [7.3], Qrr [7.5]
Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test
conditions are defined in bracket.
PAGE
3 / 10
11. Test Circuit & Definition of Switching Characteristics
LS1 = 500 nH
Rg
LLOAD
LS2 = 100 nH
C = 2 mF V CC
DUT: diode
CS = 200 uF
Fig. 1 – Switching test circuit
Diode part: reverse recovery
t6
IF
di/dt
Qrr = –
∫ 0
if dt
VR
t6
0
di
trr 10%IF Erec = –
∫ if•vr dt
t5
Irr
50%Irr
dt
90%Irr
0
10%VR
0 t5 t6
Fig. 2 – Definitions of reverse recovery charge & energy
PAGE
4 / 10
12. Performance curves
12-1 Forward characteristics................................................................................................... 6
12-2 Reverse recovery energy characteristics ...................................................................... 7
12-3 Reverse recovery current characteristics...................................................................... 8
12-4 Transient thermal impedance characteristics ............................................................... 9
12-5 Reverse recovery safe operating area ......................................................................... 10
PAGE
5 / 10
12-1 Forward characteristics
2400
2200
2000
1800
1600
Forward current IF [A]
1400
1200
1000
800
Tj=125°C Tj=25°C
600
400
200
0
0 1 2 3 4 5 6
Forward voltage VFM [V]
Forward voltage characteristics (typical)
PAGE
6 / 10
12-2 Reverse recovery energy characteristics
1.2
Tj = 125°C, VR = 1650V, di/dt = −3700 A/µs

Ls = 100nH, Inductive load
Integration range: 10%VR ~10%IF
1.0
Reverse recovery energy Erec [J/P]
0.8
0.6
0.4
0.2
0.0
0 500 1000 1500 2000 2500
Reverse recovery energy characteristics (typical)
PAGE
7 / 10
12-3 Reverse recovery current characteristics
3000
Tj = 125°C, VR = 1650V, di/dt = −3700 A/µs

Ls = 100nH, Inductive load
2500
2000
Reverse recovery current Irr [A]
1500
1000
500
0
0 500 1000 1500 2000 2500
Reverse recovery current characteristics (typical)
PAGE
8 / 10
12-4 Transient thermal impedance characteristics
1.2
Rth(j-c) = 18 K/kW
1.0
Normalized transient thermal impedance
0.8
0.6
0.4
0.2
0.0
0.001 0.01 0.1 1 10
Time [sec.]
Transient thermal impedance characteristics
PAGE
9 / 10
12-5 Reverse recovery safe operating area
3000
Tj = 125°C, VR ≤ 2200 V
di/dt ≤ 4800A/µs
2500
2000
Reverse recovery current Irr [A]
1500
1000
500
0
0 1000 2000 3000 4000
Reverse voltage VR [V]
Reverse recovery safe operating area (RRSOA)
PAGE
10 / 10

Type Number 2. Structure 3. Application & Customer 4. Outline 5. Related Specifications

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SECURITY

CODE MITSUBISHI ELECTRIC CORPORATION

HIGH VOLTAGE DIODE MODULE

1. Type Number RM1200DB-66S

Fig. 1 - Outline drawing

6.1 Repetitive peak reverse voltage VRRM Tj = 25 °C 3300 V

6.2 Non-repetitive peak reverse

6.3 Reverse DC voltage VR(DC) Tj = 25 °C 2200 V

6.4 DC forward current IF Tc = 25 °C 1200 A

6.8 Junction temperature Tj — −40 ~ +150 °C

6.9 Storage temperature Tstg — −40 ~ +125 °C

6.10 Operating temperature Top — −40 ~ +125 °C

7.3 Reverse recovery time trr — 0.75 — µs

7.6 Reverse recovery energy Erec — 0.75 — J/P

Note 1: It doesn't include the voltage drop by Internal lead resistance.

Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.

9.1 Mounting torque — Main terminal screw : M8 7.0 — 13.0 N·m

9.2 Mounting torque — Mounting screw : M6 3.0 — 6.0 N·m

9.3 Mass — — — 1.5 — kg

9.4 Comparative tracking index CTI — 600 — — —

9.5 Clearance — — 19.5 — — mm

9.6 Creepage distance — — 32 — — mm

9.7 Internal inductance LA-K(int) — — 35 — nH

9.8 Internal lead resistance RA-K(int) Tc = 25 °C — 0.25 — mΩ

10. Shipping Inspection Report Item (note 3)

11. Test Circuit & Definition of Switching Characteristics

Fig. 1 – Switching test circuit

Diode part: reverse recovery

Fig. 2 – Definitions of reverse recovery charge & energy

12. Performance curves

12-1 Forward characteristics................................................................................................... 6

12-2 Reverse recovery energy characteristics ...................................................................... 7

12-3 Reverse recovery current characteristics...................................................................... 8

12-4 Transient thermal impedance characteristics ............................................................... 9

12-5 Reverse recovery safe operating area ......................................................................... 10

12-1 Forward characteristics

Forward voltage VFM [V]

Forward voltage characteristics (typical)

12-2 Reverse recovery energy characteristics

Tj = 125°C, VR = 1650V, di/dt = −3700 A/µs

Forward current IF [A]

Reverse recovery energy characteristics (typical)

12-3 Reverse recovery current characteristics

Tj = 125°C, VR = 1650V, di/dt = −3700 A/µs

Forward current IF [A]

Reverse recovery current characteristics (typical)

12-4 Transient thermal impedance characteristics

Transient thermal impedance characteristics

12-5 Reverse recovery safe operating area

Reverse voltage VR [V]

Reverse recovery safe operating area (RRSOA)

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