C3D02060F VRRM

= 600 V
Silicon Carbide Schottky Diode
IF (TC=128˚C) = 2 A
Z-Rec™ Rectifier (Full-Pak) Qc = 4.8 nC

Features Package

• 600-Volt Schottky Rectifier

• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Extremely Fast Switching
• Positive Temperature Coefficient on VF TO-220-F2
• Fully Isolated Case

Benefits
PIN 1
• Replace Bipolar with Unipolar Rectifiers CASE
• Essentially No Switching Losses PIN 2
• Higher Efficiency
• Reduction of Heat Sink Requirements
• No Additional Isolation Required

Applications Part Number Package Marking

C3D02060F TO-220-F2 C3D02060

• Switch Mode Power Supplies
• Power Factor Correction
- Typical PFC Pout : 150W-300W
• Motor Drives

Maximum Ratings (TC = 25 ˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note

VRRM Repetitive Peak Reverse Voltage 600 V

VRSM Surge Peak Reverse Voltage 600 V

VDC DC Blocking Voltage 600 V

4 TC=25˚C
IF Continuous Forward Current 2 A TC=128˚C
1.8 TC=135˚C
12 TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3
IFRM Repetitive Peak Forward Surge Current A
8 TC=110˚C, tP = 10 ms, Half Sine Wave, D=0.3

IFSM 20 TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3

Non-Repetitive Peak Forward Surge Current A
16 TC=110˚C, tp = 10 mS, Half Sine Wave, D=0.3

IFSM Non-Repetitive Peak Forward Surge Current 65 A TC=25˚C, tP = 10 µs, Pulse

10.8 TC=25˚C
Ptot Power Dissipation W
4.7 TC=110˚C

-55 to
TJ , Tstg Operating Junction and Storage Temperature ˚C
+175

1 Nm M3 Screw
TO-220 Mounting Torque
8.8 lbf-in 6-32 Screw

1 C3D02060F Rev. D
Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

1.5 1.7 IF = 2 A TJ=25°C

VF Forward Voltage V
1.8 2.4 IF = 2 A TJ=175°C
10 50 VR = 600 V TJ=25°C
IR Reverse Current μA
20 100 VR = 600 V TJ=175°C
VR = 600 V, IF = 2A
QC Total Capacitive Charge 4.8 nC di/dt = 500 A/μs
TJ = 25°C
120 VR = 0 V, TJ = 25°C, f = 1 MHz
C Total Capacitance 12 pF VR = 200 V, TJ = 25˚C, f = 1 MHz
11 VR = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics

Symbol Parameter Typ. Unit

RθJC Thermal Resistance from Junction to Case 13.8 °C/W

Typical Performance

4.0
4.0 66

3.5
3.5
TJ = 25°C
TJ = 75°C 55
TJ = 125°C
3.0
3.0
TJ = 175°C
IR Reverse Current (uA)
IF Forward Current (A)

44
IR Reverse Current (μA)
IF Forward Current (A)

2.5
2.5

D1_25C Current(A)
D1_75C D2_75C
2.0
2.0 33
D1_125C D2_125C
D1_175C D2_175C

1.5
1.5
22 TJ = 25°C
TJ = 75°C
1.0
1.0
TJ = 125°C
11
TJ = 175°C
0.5
0.5

0
0.0 00
0.0
0.0 0.5
0.5 1.0
1.0 1.5
1.5 2.0
2.0 2.5
2.5 3.0
3.0 0
0 100
100 200
200 300
300 400
400 500
500 600
600 700
700 800
800 900
900

VF Forward
F V Forward Voltage (V)
Voltage (V) VR VReverse
R Reverse Voltage
Voltage (V) (V)

Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

2 C3D02060F Rev. D
Typical Performance

C3D02060F Current Derating D3_2A_FP

10
10 60
60

99
(A)(A)

88 50
50
Current
Forward Current

77
20% Duty*

C Capacitance (pF)
C Capacitance (pF)
30% Duty* 40
40
66 50% Duty*
Forward

70% Duty*
55 DC
30
30 D3_2A_FP
Peak

44
I Peak F(PEAK)

33 20
20
IF(PEAK)

22
10
10
11

00 00
25
25 50
50 75
75 100
100 125
125 150
150 175
175 1
1 10
10 100
100 1000
1000
TCC Case
T Case Temperature
Temperature (°(°°C)C) VR Reverse
VR Reverse Voltage(V)
Voltage (V)
* Frequency > 1KHz

Figure 3. Current Derating Figure 4. Capacitance vs. Reverse Voltage

1E1

1E0
Zth (°C/W)

E-1

E-2
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3
Time (s)

Figure 5. Transient Thermal Impedance

3 C3D02060F Rev. D
Typical Performance

15
15.0

12
12.0

Power Dissipation (W)

Power Dissipation (W)

9
9.0

6
6.0

3
3.0

0
0.0
25
25 50
50 75
75 100
100 125
125 150
150 175
175
Case Temperature(°(°C)
TC CaseTcTemperature C)

Figure 6. Power Derating

Package Dimensions

Package TO-220-F2

Inches Millimeters
E A POS
F Min Max Min Max
B A .177 .193 4.5 4.9
B .092 .108 2.34 2.74
G C .248 .272 6.3 6.9
C D .098 .114 2.5 2.9
E .390 .406 9.9 10.3
H F .118 .134 3.0 3.4
G .122 .137 3.1 3.5
H .617 .633 15.67 16.07
L .039 .055 1.0 1.4
M .016 .031 0.4 0.8
P N .185 .217 4.7 5.5
P 0 .154 0 3.9
D
L S S .476 .508 12.1 12.9
T .016 .031 0.4 0.8
T NOTE:
M 1. Dimension L, M, T apply for Solder Dip
Finish

PIN 1
CASE
PIN 2

4 C3D02060F Rev. D
Recommended Solder Pad Layout

TO-220-F2

Part Number Package Marking

C3D02060F TO-220-F2 C3D02060

Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering

Diode Model

VfT = VT + If * RT

RT = 0.21 + (T j *1.71*10 −3 )

VT = 0.98 + (T j * −1.7 *10 −3 )

Note: Tj = Diode Junction Temperature In Degrees Celsius

5 C3D02060F Rev. D
Notes

• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems, or weapons systems.

Copyright © 2013 Cree, Inc. All rights reserved. Cree, Inc.

4600 Silicon Drive
The information in this document is subject to change without notice. Durham, NC 27703
USA Tel: +1.919.313.5300
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Fax: +1.919.313.5451
www.cree.com/power

6 C3D02060F Rev. D