ECEN5817 Lecture 35

Analysis of ZVS-QSW switch cell

(1 t
(1-transistor
i t case: current-bidirectional
bidi i l transistor
i + di
diode)
d )
i2(t)
Lr
D1
i1(t) i2(t) I V2
V1 –
Lr
+ +
L  + Lr
Q1
Vg V+–1 v1(t) D2 Cr v2(t) C
V1R V v2(t) V1

– – _ – 0

0Ts 0t
Conducting
devices: D1 Q1 X D2 X

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 Single-transistor ZVS-QSW
waveforms and state-plane analysis
L
i1 D1 iL

+ Q1 +
+
mc
V1 D2 vc V

_ C _
_

1 2 3 4 5 oTs
jl

ot

mc
jl
ot

Devices conducting

    
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 L
iL
Interval 1: Q1 conduction +
i1 D1

Q1 +
+
V1 D2 vc V

_ C _
_

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 L
iL
Interval 2: transition +
i1 D1

Q1 +
+
V1 D2 vc V

_ C _
_

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 L
iL
Interval 3: D2 conduction +
i1 D1

Q1 +
+
V1 D2 vc V

_ C _
_

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 L
iL
Interval 4: transition +
i1 D1

Q1 +
+
V1 D2 vc V

_ C _
_

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 L
iL
Interval 5: D1 conduction +
i1 D1

Q1 +
+
V1 D2 vc V

_ C _
_

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Average output
current

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Control input: transistor/diode conduction angle 

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A way to solve and plot the characteristics

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Solving, p 2

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Results: output-plane characteristic of the switch
conversion ratio µ with F as the parameter

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 Output-plane characteristic of the
switch conversion ratio µ with  as the parameter

Course website contains Excel spreadsheet (with function macros) that

evaluates the above equations and can plot the above characteristic.

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Summary of 1-transistor ZVS-QSW characteristics

µ vs
vs. F

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 Boundaries of ZVS operation

mc mc

jl jl

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